TWI573506B - Method for manufacturing printed circuit board - Google Patents
Method for manufacturing printed circuit board Download PDFInfo
- Publication number
- TWI573506B TWI573506B TW103146334A TW103146334A TWI573506B TW I573506 B TWI573506 B TW I573506B TW 103146334 A TW103146334 A TW 103146334A TW 103146334 A TW103146334 A TW 103146334A TW I573506 B TWI573506 B TW I573506B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- conductive
- circuit
- photoresist
- patterned
- Prior art date
Links
Landscapes
- Manufacturing Of Printed Wiring (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Description
本發明涉及一種電路板的製作方法。 The invention relates to a method of manufacturing a circuit board.
隨著電子產品小型化及薄型化的發展,應用於電子產品的電路板也朝著更小及更薄發展,由此,要求電路板具有更大的佈線密度,也即具有更細的線路。 With the development of miniaturization and thinning of electronic products, circuit boards applied to electronic products are also moving toward smaller and thinner, and thus, circuit boards are required to have a larger wiring density, that is, have finer wiring.
因此,有必要提供一種用於製作具有細線路的電路板的製作方法。 Therefore, it is necessary to provide a method of fabricating a circuit board having fine wiring.
一種電路板的製作方法,包括步驟:提供一電路基板,所述電路基板包括一介電層及形成於介電層一側的導電線路層;在所述電路基板上形成多個盲孔,並使部分所述導電線路層的第四表面從所述盲孔中暴露出來;在所述電路基板遠離所述導電線路層側形成圖案化的第一光阻層;在所述電路基板遠離所述導電線路層側形成圖案化的第二光阻層,所述形成圖案化的第二光阻層形成於所述圖案化的第一光阻層的間隙且與所述圖案化的第一光阻層相間隔;在所述盲孔內填充形成導電柱,以及在圖案化的所述第一及第二光阻層間隙形成導電層,所述導電柱電連接所述導電線路層及所述導電層;及去除所述第一及第二光阻層,從而形成電路板。 A method for manufacturing a circuit board, comprising the steps of: providing a circuit substrate, the circuit substrate comprising a dielectric layer and a conductive circuit layer formed on one side of the dielectric layer; forming a plurality of blind holes on the circuit substrate, and Forming a fourth surface of the conductive circuit layer from the blind via; forming a patterned first photoresist layer on a side of the circuit substrate away from the conductive circuit layer; away from the circuit substrate Forming a patterned second photoresist layer on the conductive circuit layer side, the patterned second photoresist layer being formed on the gap of the patterned first photoresist layer and the patterned first photoresist Laminar spacing; forming a conductive pillar in the blind via, and forming a conductive layer in the patterned gap between the first and second photoresist layers, the conductive pillar electrically connecting the conductive trace layer and the conductive a layer; and removing the first and second photoresist layers to form a circuit board.
相對于現有技術,本技術方案實施例的電路板的製作方法中,通過兩次形成光阻層,並使第二光阻層形成於第一光阻層的間隙,並在相鄰的光阻層的間隙形成導電線路,因兩次形成光阻層得到的光阻層的間隙可以做到更小,從而,本技術方案實施例的電路板的製作方法可以製作更細的導電線路。 With respect to the prior art, in the method of fabricating the circuit board of the embodiment of the present technical solution, the photoresist layer is formed twice, and the second photoresist layer is formed in the gap of the first photoresist layer, and adjacent to the photoresist The gap between the layers forms a conductive line, and the gap of the photoresist layer obtained by forming the photoresist layer can be made smaller. Therefore, the method for fabricating the circuit board of the embodiment of the present invention can produce a thinner conductive line.
10‧‧‧電路基板 10‧‧‧ circuit board
11‧‧‧介電層 11‧‧‧Dielectric layer
12‧‧‧導電線路層 12‧‧‧ Conductive circuit layer
111‧‧‧第一表面 111‧‧‧ first surface
112‧‧‧第二表面 112‧‧‧ second surface
121‧‧‧第三表面 121‧‧‧ third surface
122‧‧‧第四表面 122‧‧‧ fourth surface
13‧‧‧盲孔 13‧‧‧Blind hole
14‧‧‧電鍍種子層 14‧‧‧Electroplating seed layer
15‧‧‧第一光阻層 15‧‧‧First photoresist layer
151‧‧‧第一周邊區域 151‧‧‧First surrounding area
152‧‧‧第一條狀區域 152‧‧‧First strip area
16‧‧‧第二光阻層 16‧‧‧Second photoresist layer
161‧‧‧第二周邊區域 161‧‧‧Second surrounding area
162‧‧‧第二條狀區域 162‧‧‧Second strip area
17‧‧‧導電柱 17‧‧‧conductive column
18‧‧‧導電層 18‧‧‧ Conductive layer
19‧‧‧第二導電線路層 19‧‧‧Second conductive circuit layer
191‧‧‧導電線路 191‧‧‧Electrical circuit
21‧‧‧防焊層 21‧‧‧ solder mask
20‧‧‧電路板 20‧‧‧ boards
圖1係本發明實施例提供的電路基板的剖視圖。 1 is a cross-sectional view of a circuit substrate according to an embodiment of the present invention.
圖2係本發明另一實施例提供在電路基板的剖視圖。 2 is a cross-sectional view of a circuit substrate provided by another embodiment of the present invention.
圖3係將圖1的電路基板上形成盲孔後的剖視圖。 3 is a cross-sectional view showing a blind hole formed in the circuit board of FIG. 1.
圖4係在圖3的電路基板上形成電鍍種子層後的剖視圖。 4 is a cross-sectional view showing a plating seed layer formed on the circuit substrate of FIG. 3.
圖5係在圖4中的電鍍種子層表面形成第一光阻層後的剖視圖。 Figure 5 is a cross-sectional view showing the first photoresist layer formed on the surface of the electroplated seed layer of Figure 4.
圖6係將圖5中的第一光阻層圖案化後的剖視圖。 Fig. 6 is a cross-sectional view showing the first photoresist layer in Fig. 5 after patterning.
圖7係在圖5中的第一光阻層間隙形成第二光阻層後剖視圖。 FIG. 7 is a cross-sectional view showing the second photoresist layer formed in the gap of the first photoresist layer in FIG. 5. FIG.
圖8係將圖7中的第二光阻層圖案化後剖視圖。 Figure 8 is a cross-sectional view showing the second photoresist layer of Figure 7 in a pattern.
圖9係在圖8中的盲孔內形成導電柱及在光阻層的間隙形成導電層後的剖視圖。 Figure 9 is a cross-sectional view showing the formation of a conductive post in the blind via of Figure 8 and the formation of a conductive layer in the gap of the photoresist layer.
圖10係將圖9中的第一及第二光阻層去除後的剖視圖。 Figure 10 is a cross-sectional view showing the first and second photoresist layers of Figure 9 removed.
圖11係將圖10中的未被導電層覆蓋的電鍍種子層去除後的剖視圖。 Figure 11 is a cross-sectional view showing the electroplated seed layer of Figure 10 not covered by a conductive layer.
圖12係將圖11中的導電層表面形成防焊層後的剖視圖。 Fig. 12 is a cross-sectional view showing the surface of the conductive layer in Fig. 11 after forming a solder resist layer.
本發明實施例提供一種電路板的製作方法,包括如下步驟: Embodiments of the present invention provide a method for fabricating a circuit board, including the following steps:
第一步,請參閱圖1,提供一電路基板10,所述電路基板10包括一介電層11及形成於介電層11一側的導電線路層12。 In the first step, referring to FIG. 1 , a circuit substrate 10 is provided. The circuit substrate 10 includes a dielectric layer 11 and a conductive circuit layer 12 formed on one side of the dielectric layer 11 .
本實施例中,所述介電層11包括相對的第一表面111及第二表面112,所述導電線路層12嵌設於所述介電層11的第一表面111,所述導電線路層12包括一第三表面121及與所述第三表面121相對的第四表面122,所述第三表面121與所述第一表面111的齊平,所述第四表面122埋設於所述介電層11內。 In this embodiment, the dielectric layer 11 includes an opposite first surface 111 and a second surface 112. The conductive circuit layer 12 is embedded in the first surface 111 of the dielectric layer 11, and the conductive circuit layer 12 includes a third surface 121 and a fourth surface 122 opposite to the third surface 121, the third surface 121 is flush with the first surface 111, and the fourth surface 122 is embedded in the medium surface Inside the electrical layer 11.
所述電路基板10可以通過無芯板制程(coreless)製作,即,通過提供承載板,在承載板上形成所述導電線路層12,之後再在所述導電線路層12上形成所述介電層11,從而使所述介電層11包覆所述導電線路層12,之後去除所述承載板,形成所述電路基板10。 The circuit substrate 10 can be fabricated by a coreless process, that is, by providing a carrier plate, the conductive circuit layer 12 is formed on a carrier plate, and then the dielectric is formed on the conductive circuit layer 12. The layer 11 is such that the dielectric layer 11 covers the conductive wiring layer 12, and then the carrier plate is removed to form the circuit substrate 10.
在其他實施例中,請參閱圖2,所述導電線路層12也可以凸設於所述介電層11的第一表面111。 In other embodiments, referring to FIG. 2 , the conductive circuit layer 12 may also protrude from the first surface 111 of the dielectric layer 11 .
另外,所述電路基板10還可以包括形成於所述導電線路層12遠離所述第二表面112側的交替排列的介電層(圖未示)及導電線路層(圖未示)。 In addition, the circuit board 10 may further include an alternating dielectric layer (not shown) and a conductive circuit layer (not shown) formed on the side of the conductive circuit layer 12 away from the second surface 112.
第二步,請參閱圖3,在所述電路基板10上形成多個盲孔13,並使部分所述導電線路層12的第四表面122從所述盲孔13中暴露出來。 In the second step, referring to FIG. 3, a plurality of blind holes 13 are formed on the circuit substrate 10, and a portion of the fourth surface 122 of the conductive circuit layer 12 is exposed from the blind holes 13.
本實施例中,通過鐳射蝕孔工藝形成所述盲孔13,所述盲孔13沿與所述電路基板10垂直方向的截面大致呈梯形。 In the embodiment, the blind vias 13 are formed by a laser etching process, and the blind vias 13 have a substantially trapezoidal cross section along a direction perpendicular to the circuit substrate 10.
第三步,請參閱圖4,在所述電路基板10的介電層11的第二表面112上以及盲孔13的孔壁形成電鍍種子層14。 In the third step, referring to FIG. 4, a plating seed layer 14 is formed on the second surface 112 of the dielectric layer 11 of the circuit substrate 10 and the hole walls of the blind vias 13.
所述電鍍種子層14可以通過黑化、黑影、化學鍍等工藝形成。本實施例中,所述電鍍種子層14係通過化學鍍形成的薄銅層。 The plating seed layer 14 may be formed by a process such as blackening, black shadow, electroless plating, or the like. In this embodiment, the plating seed layer 14 is a thin copper layer formed by electroless plating.
第四步,請參閱圖5-6,在所述電路基板10遠離所述導電線路層12側形成圖案化的第一光阻層15。 In the fourth step, referring to FIG. 5-6, a patterned first photoresist layer 15 is formed on the circuit substrate 10 away from the conductive circuit layer 12 side.
具體地,首先,請參閱圖5,在所述電鍍種子層14表面形成第一光阻層15;之後,請參閱圖6,通過曝光及顯影工藝去除部分第一光阻層15,從而將所述第一光阻層15製作形成圖案化的第一光阻層15。所述圖案化的第一光阻層15包括第一周邊區域151及被第一周邊區域151包圍的多個第一條狀區域152,所述多個第一條狀區域152相互間隔,且與所述第一周邊區域151也相間隔,定義相鄰兩個第一條狀區域152之間的間隙的寬度為L1,定義各第一條狀區域152的寬度為W1,其中,L1及W1均大於0。本實施例中,所述第一光阻層15為乾膜。 Specifically, first, referring to FIG. 5, a first photoresist layer 15 is formed on the surface of the plating seed layer 14; afterwards, referring to FIG. 6, a portion of the first photoresist layer 15 is removed by an exposure and development process, thereby The first photoresist layer 15 is formed to form a patterned first photoresist layer 15. The patterned first photoresist layer 15 includes a first peripheral region 151 and a plurality of first strip regions 152 surrounded by the first peripheral region 151, the plurality of first strip regions 152 being spaced apart from each other, and The first peripheral regions 151 are also spaced apart, and the width of the gap between the adjacent two first strip regions 152 is defined as L1, and the width of each of the first strip regions 152 is defined as W1, wherein L1 and W1 are both Greater than 0. In this embodiment, the first photoresist layer 15 is a dry film.
本實施例中,所述盲孔13及盲孔13開口周圍區域暴露於圖案化的所述第一光阻層15中,除盲孔13及盲孔13周邊區域外的部分電鍍種子層14也暴露於所述第一光阻層15中。 In this embodiment, the area around the opening of the blind hole 13 and the blind hole 13 is exposed to the patterned first photoresist layer 15, and the portion of the plating seed layer 14 except the peripheral portion of the blind hole 13 and the blind hole 13 is also It is exposed to the first photoresist layer 15.
第五步,請參閱圖7-8,在所述電路基板10遠離所述導電線路層12側形成圖案化的第二光阻層16,至少部分所述圖案化的第二光阻層16形成於所述圖案化的第一光阻層15的間隙且與所述圖案化的第一光阻層15相互間隔。 In the fifth step, referring to FIG. 7-8, a patterned second photoresist layer 16 is formed on the side of the circuit substrate 10 away from the conductive circuit layer 12, and at least a portion of the patterned second photoresist layer 16 is formed. The gap between the patterned first photoresist layer 15 and the patterned first photoresist layer 15 are spaced apart from each other.
本實施例中,首先,請參閱圖7,在圖案化的所述第一光阻層15 表面以及從所述圖案化的第一光阻層15中暴露出的電鍍種子層14的表面形成第二光阻層16;之後,請參閱圖8,通過曝光及顯影工藝去除部分第二光阻層16,從而將所述第二光阻層16製作形成圖案化的第二光阻層16。所述圖案化的第二光阻層16包括第二周邊區域161及被第二周邊區域161包圍的多個第二條狀區域162,所述第二周邊區域161與所述第一周邊區域151相對應,所述多個第二條狀區域162相互間隔,且與所述第二周邊區域161也相間隔,所述第一條狀區域152與所述第二條狀區域162交替排列且也相互間隔,定義相鄰兩個第二條狀區域162之間的間隙的寬度為L2,定義各第二條狀區域162的寬度為W2,定義相鄰的第一條狀區域152及第二條狀區域162之間的間隙的寬度為L3,其中,L2、L3及W2均大於0。可以理解,L1=2L3+W2,L2=2L3+W1,也即,L3遠小於L1及L2。 In this embodiment, first, referring to FIG. 7, the first photoresist layer 15 is patterned. a surface and a surface of the plating seed layer 14 exposed from the patterned first photoresist layer 15 forms a second photoresist layer 16; thereafter, referring to FIG. 8, a portion of the second photoresist is removed by an exposure and development process Layer 16, thereby forming the second photoresist layer 16 to form a patterned second photoresist layer 16. The patterned second photoresist layer 16 includes a second peripheral region 161 and a plurality of second strip regions 162 surrounded by the second peripheral region 161, the second peripheral region 161 and the first peripheral region 151 Correspondingly, the plurality of second strip regions 162 are spaced apart from each other and are also spaced apart from the second peripheral region 161, and the first strip regions 152 and the second strip regions 162 are alternately arranged and also The gaps between the adjacent two second strip regions 162 are defined as L2, the width of each second strip region 162 is defined as W2, and the adjacent first strip regions 152 and the second strip are defined. The width of the gap between the regions 162 is L3, wherein L2, L3 and W2 are each greater than zero. It can be understood that L1=2L3+W2, L2=2L3+W1, that is, L3 is much smaller than L1 and L2.
所述盲孔13及盲孔13開口周圍區域暴露於所述第一及第二光阻層15、16中,除盲孔13及盲孔13周邊區域外的部分電鍍種子層14也暴露於所述第一及第二光阻層15、16中。 The area around the opening of the blind hole 13 and the blind hole 13 is exposed to the first and second photoresist layers 15 and 16, and a portion of the plating seed layer 14 except the peripheral portion of the blind hole 13 and the blind hole 13 is also exposed. The first and second photoresist layers 15 and 16 are described.
本實施例中,所述第二光阻層16為液態光致抗蝕刻劑,通過印刷工藝形成。 In this embodiment, the second photoresist layer 16 is a liquid photo-etching resist formed by a printing process.
在其他實施例中,所述圖案化的第二光阻層16也可以不形成所述第二周邊區域161。 In other embodiments, the patterned second photoresist layer 16 may not form the second peripheral region 161.
第六步,請參閱圖9,通過電鍍工藝在所述盲孔13內填充形成導電柱17,以及在圖案化的所述第一及第二光阻層15、16間隙形成導電層18;所述導電柱17電連接所述導電線路層12及所述電鍍種子層14、導電層18。 In a sixth step, referring to FIG. 9, a conductive pillar 17 is formed in the blind via 13 by a plating process, and a conductive layer 18 is formed in the gap between the patterned first and second photoresist layers 15 and 16; The conductive pillars 17 electrically connect the conductive circuit layer 12 and the plating seed layer 14 and the conductive layer 18.
具體地,所述導電柱17遠離所述導電線路層12的表面與所述導電層18的表面相相齊平,其中,所述導電層18的厚度遠大於所述電鍍種子層14的厚度。 Specifically, the surface of the conductive pillar 17 away from the conductive circuit layer 12 is flush with the surface of the conductive layer 18, wherein the thickness of the conductive layer 18 is much larger than the thickness of the plating seed layer 14.
第七步,請參閱圖10,去除所述第一及第二光阻層15、16。 In the seventh step, referring to FIG. 10, the first and second photoresist layers 15, 16 are removed.
第八步,請參閱圖11,去除未被所述導電層18覆蓋的所述電鍍種子層14,從而將所述電鍍種子層14、導電層18製作形成第二導電線路層19。 In the eighth step, referring to FIG. 11, the plating seed layer 14 not covered by the conductive layer 18 is removed, thereby forming the plating seed layer 14 and the conductive layer 18 to form the second conductive wiring layer 19.
本實施例中,通過快速蝕刻的方式蝕刻去除所述電鍍種子層14,因電鍍種子層14的厚度遠小於所述導電層18的厚度,故,所述導電層18僅被略減薄而並未被蝕刻去除,從而,將形成於所述介電層11表面的所述電鍍種子層14、導電層18蝕刻形成第二導電線路層19。 In this embodiment, the plating seed layer 14 is etched away by rapid etching. Since the thickness of the plating seed layer 14 is much smaller than the thickness of the conductive layer 18, the conductive layer 18 is only slightly thinned and The plating seed layer 14 and the conductive layer 18 formed on the surface of the dielectric layer 11 are etched to form the second conductive wiring layer 19 without being removed by etching.
可以理解,暴露於所述第一及第二光阻層15、16中的電鍍種子層14的圖案即對應于要形成的第二導電線路層19的圖案。 It will be understood that the pattern of the plating seed layer 14 exposed in the first and second photoresist layers 15, 16 corresponds to the pattern of the second conductive wiring layer 19 to be formed.
形成於所述第一條狀區域152與所述第二條狀區域162間隙的所述第二導電線路層19即為多條導電線路191,所述導電線路191的寬度即為對應的相鄰的第一條狀區域152及第二條狀區域162之間的間隙的寬度,即L3,可以理解,如果僅形成所述第一或第二光阻層15、16,則所述導電線路191的寬度應為L1或者L2,而本案既形成第一光阻層15又形成第二光阻層16得到的導電線路191的寬度為L3,L3遠小於L1及L2,即,同樣條件下對於同樣的光阻層,本案的電路板的製作方法得到的導電線路191可以較僅形成所述第一或第二光阻層15、16得到的導電線路的寬度更細。 The second conductive circuit layer 19 formed in the gap between the first strip region 152 and the second strip region 162 is a plurality of conductive traces 191, and the width of the conductive traces 191 is a corresponding adjacent The width of the gap between the first strip region 152 and the second strip region 162, that is, L3, it is understood that if only the first or second photoresist layer 15, 16 is formed, the conductive trace 191 The width of the film should be L1 or L2, and the width of the conductive line 191 obtained by forming the first photoresist layer 15 and the second photoresist layer 16 is L3, and L3 is much smaller than L1 and L2, that is, under the same conditions. The conductive layer 191 obtained by the method for manufacturing the circuit board of the present invention can be made thinner than the conductive line obtained by forming only the first or second photoresist layers 15 and 16.
第九步,請參閱圖12,在所述導電層18表面以及暴露於所述導電層18中的所述介電層11的表面形成防焊層21,從而得到電路板20。 In a ninth step, referring to FIG. 12, a solder resist layer 21 is formed on the surface of the conductive layer 18 and the surface of the dielectric layer 11 exposed in the conductive layer 18, thereby obtaining the circuit board 20.
其中,部分所述導電層18暴露於所述防焊層21,形成電性連接墊22。 A part of the conductive layer 18 is exposed to the solder resist layer 21 to form an electrical connection pad 22 .
在另一實施例中,也可以不在上述第三步形成電鍍種子層14,而係在上述第五步形成圖案化的第一及第二光阻層15、16後,在暴露於圖案化的第一及第二光阻層15、16中的介電層11的表面通過黑化、黑影或化學鍍等方式形成電鍍種子層14,之後再進行上述第六步的電鍍在所述電鍍種子層14表面形成形成導電層18的步驟,此時,因導電層18與電鍍種子層14相對應,導電層18與電鍍種子層14即形成第二導電線路層19,不用進行上述第8步的去除未被導電層18覆蓋的電鍍種子層14的步驟。 In another embodiment, the plating seed layer 14 may not be formed in the third step, but after being patterned in the fifth step to form the patterned first and second photoresist layers 15, 16, after being exposed to the patterned The surface of the dielectric layer 11 in the first and second photoresist layers 15 and 16 is formed by electroplating, black shadow or electroless plating, and then electroplating is performed on the surface of the sixth step. The surface of the layer 14 is formed with a step of forming the conductive layer 18. At this time, since the conductive layer 18 corresponds to the plating seed layer 14, the conductive layer 18 and the plating seed layer 14 form the second conductive wiring layer 19 without performing the above step 8. The step of removing the electroplated seed layer 14 that is not covered by the conductive layer 18 is removed.
在其他實施例中,還可以不形成所述電鍍種子層14,而通過其他無電流鍍膜方式直接形成所述導電層18。 In other embodiments, the electroplated seed layer 14 may not be formed, but the conductive layer 18 may be directly formed by other currentless plating methods.
相較於先前技術的僅形成一光阻層15或16,本技術方案實施例的電路板的製作方法中,通過兩次形成第一及第二光阻層15、16,並使第二光阻層16形成於第一光阻層15的間隙,並通過電鍍在相鄰的第一及第二光阻層15、16的間隙形成導電線路191,因兩次形成第一及第二光阻層15、16得到的第一及第二光阻層15、16的間隙可以做到更小,從而,本技術方案實施例的電路板的製作方法可以製作更細的導電線路。 In the method of fabricating the circuit board of the embodiment of the present invention, the first and second photoresist layers 15 and 16 are formed twice, and the second light is made, compared to the prior art, in which only one photoresist layer 15 or 16 is formed. The resist layer 16 is formed in the gap of the first photoresist layer 15 and forms a conductive line 191 in the gap between the adjacent first and second photoresist layers 15 and 16 by electroplating, and the first and second photoresists are formed twice. The gap between the first and second photoresist layers 15 and 16 obtained by the layers 15 and 16 can be made smaller. Therefore, the method for fabricating the circuit board of the embodiment of the present invention can produce a thinner conductive line.
另外,先前技術中還有通過減薄光阻層來得到更細的導電線路, 但係減薄的光阻層在電鍍形成線路時限制了線路層的增厚,也即只能得到較薄的線路層,此較薄的線路層會有斷線等風險,本技術方案實施例的電路板的製作方法不需要減薄光阻層厚度即可製作得到更細的導電線路。 In addition, in the prior art, a thinner conductive layer is obtained by thinning the photoresist layer. However, the thinned photoresist layer limits the thickening of the circuit layer when the circuit is formed by electroplating, that is, only a thin circuit layer can be obtained, and the thin circuit layer has a risk of disconnection and the like. The circuit board can be fabricated without thinning the thickness of the photoresist layer to produce a thinner conductive line.
惟,以上所述者僅為本發明之較佳實施方式,自不能以此限制本案之請求項。舉凡熟悉本案技藝之人士爰依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下請求項內。 However, the above description is only a preferred embodiment of the present invention, and the claim of the present invention cannot be limited thereby. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included in the following claims.
11‧‧‧介電層 11‧‧‧Dielectric layer
12‧‧‧導電線路層 12‧‧‧ Conductive circuit layer
17‧‧‧導電柱 17‧‧‧conductive column
19‧‧‧第二導電線路層 19‧‧‧Second conductive circuit layer
21‧‧‧防焊層 21‧‧‧ solder mask
20‧‧‧電路板 20‧‧‧ boards
Claims (10)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410523682.4A CN105491796B (en) | 2014-10-08 | 2014-10-08 | The production method of circuit board |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201618621A TW201618621A (en) | 2016-05-16 |
TWI573506B true TWI573506B (en) | 2017-03-01 |
Family
ID=55678396
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW103146334A TWI573506B (en) | 2014-10-08 | 2014-12-30 | Method for manufacturing printed circuit board |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN105491796B (en) |
TW (1) | TWI573506B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10820411B1 (en) | 2020-04-06 | 2020-10-27 | Unimicron Technology Corporation | Manufacturing method for circuit board and circuit board thereof |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106601711A (en) * | 2016-12-26 | 2017-04-26 | 通富微电子股份有限公司 | Fan-out packaging structure and packaging method |
TWI718414B (en) * | 2018-09-21 | 2021-02-11 | 元太科技工業股份有限公司 | Conductive structure, circuit structure, and display |
CN112956284B (en) * | 2019-08-22 | 2023-04-14 | 宏启胜精密电子(秦皇岛)有限公司 | Transparent circuit board and method for manufacturing same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1585114A (en) * | 2003-08-22 | 2005-02-23 | 全懋精密科技股份有限公司 | Semiconductor sealing baseplate structure of electric padding metal protective layer and producing method thereof |
TW201026168A (en) * | 2008-12-24 | 2010-07-01 | Phoenix Prec Technology Corp | Circuit board and fabrication method thereof |
TW201124026A (en) * | 2009-12-31 | 2011-07-01 | Unimicron Technology Corp | Circuit substrate and manufacturing method thereof |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010026120A (en) * | 1999-09-03 | 2001-04-06 | 윤종용 | Method for forming a fine pattern of semiconductor device |
KR100866735B1 (en) * | 2007-05-01 | 2008-11-03 | 주식회사 하이닉스반도체 | Method for forming fine pattern of semiconductor device |
KR100871967B1 (en) * | 2007-06-05 | 2008-12-08 | 주식회사 하이닉스반도체 | Method for forming fine pattern of semiconductor device |
KR100912990B1 (en) * | 2007-10-26 | 2009-08-20 | 주식회사 하이닉스반도체 | Method of forming a micro pattern in a semiconductor device |
CN101534610B (en) * | 2008-03-12 | 2012-03-28 | 欣兴电子股份有限公司 | Built-in capacitor element circuit board and manufacture method thereof |
TWI557855B (en) * | 2011-12-30 | 2016-11-11 | 旭德科技股份有限公司 | Package carrier and manufacturing method thereof |
CN103034049A (en) * | 2012-12-13 | 2013-04-10 | 京东方科技集团股份有限公司 | Method for manufacturing metal wire and array substrate |
-
2014
- 2014-10-08 CN CN201410523682.4A patent/CN105491796B/en not_active Expired - Fee Related
- 2014-12-30 TW TW103146334A patent/TWI573506B/en active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1585114A (en) * | 2003-08-22 | 2005-02-23 | 全懋精密科技股份有限公司 | Semiconductor sealing baseplate structure of electric padding metal protective layer and producing method thereof |
TW201026168A (en) * | 2008-12-24 | 2010-07-01 | Phoenix Prec Technology Corp | Circuit board and fabrication method thereof |
TW201124026A (en) * | 2009-12-31 | 2011-07-01 | Unimicron Technology Corp | Circuit substrate and manufacturing method thereof |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10820411B1 (en) | 2020-04-06 | 2020-10-27 | Unimicron Technology Corporation | Manufacturing method for circuit board and circuit board thereof |
Also Published As
Publication number | Publication date |
---|---|
CN105491796B (en) | 2019-02-22 |
TW201618621A (en) | 2016-05-16 |
CN105491796A (en) | 2016-04-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI478640B (en) | Printed circuit board and method for manufacturing same | |
TWI531281B (en) | Flexible printed circuit board and method for manufacturing same | |
JP6015969B2 (en) | Circuit board forming method | |
TWI530238B (en) | Chip package substrate and method for manufacturing same | |
TWI573506B (en) | Method for manufacturing printed circuit board | |
TWI492690B (en) | Method for manufacturing circuit board | |
JP2006229115A (en) | Metal component used in manufacturing wiring substrate and method for manufacturing wiring substrate using it | |
US20150327371A1 (en) | Method of making a flexible multilayer circuit board | |
TW201446084A (en) | Printed circuit board and method for manufacturing same | |
TWI606763B (en) | Circuit board and manufacturing method for same | |
US20150053457A1 (en) | Printed circuit board and method of manufacturing the same | |
KR20170041530A (en) | Printed circuit board and method of manufacturing the same | |
TWI605741B (en) | Circuit board and manufacturing method thereof | |
TWI691243B (en) | Manufacturing method for printed circuit board | |
TWI556704B (en) | Non - welded multilayer circuit board and its manufacturing method | |
KR100642741B1 (en) | Method for making double sides wiring substrate | |
JP2006120667A (en) | Printed circuit board and manufacturing method thereof | |
US9288902B2 (en) | Printed circuit board and method of manufacturing the same | |
TWI479965B (en) | Method for manufacturing printed circuit board | |
TWM522542U (en) | Circuit board structure | |
TWI637662B (en) | Printed circuit board and method for manufacturing same | |
KR101465361B1 (en) | Interposer substrate and method of manufacturing the interposer substrate | |
TWI420993B (en) | Method for manufacturing printed circuit board | |
KR101558579B1 (en) | Printed circuit board and method for fabricating the same | |
KR101218308B1 (en) | Method of manufacturing printed circuit board |