TWI420993B - Method for manufacturing printed circuit board - Google Patents

Method for manufacturing printed circuit board Download PDF

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TWI420993B
TWI420993B TW99136852A TW99136852A TWI420993B TW I420993 B TWI420993 B TW I420993B TW 99136852 A TW99136852 A TW 99136852A TW 99136852 A TW99136852 A TW 99136852A TW I420993 B TWI420993 B TW I420993B
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region
copper foil
etching
foil layer
line
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TW99136852A
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TW201218886A (en
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Yao-Wen Bai
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Zhen Ding Technology Co Ltd
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電路板製作方法 Circuit board manufacturing method

本發明涉及電路板製造技術,尤其涉及一種電路板製作方法。 The present invention relates to circuit board manufacturing technology, and in particular, to a circuit board manufacturing method.

在資訊、通訊及消費性電子產業中,電路板為所有電子產品不可或缺之基本構成要件。隨著電子產品往小型化、高速化方向發展,電路板亦從單面電路板往雙面電路板、多層電路板方向發展。多層電路板由於具有較多佈線面積與較高裝配密度而得到廣泛應用,請參見Takahashi,A.等人於1992年發表於IEEE Trans.on Components,Packaging,and Manufacturing Technology之文獻“High density multilayer printed circuit board for HITACM~880”。並且,電路板不僅要為電子元器件提供電氣連接以及必要之機械支撐,還要具有更多之功能。 In the information, communications and consumer electronics industries, circuit boards are an essential component of all electronic products. With the development of electronic products in the direction of miniaturization and high speed, circuit boards have also evolved from single-sided circuit boards to double-sided circuit boards and multilayer circuit boards. Multilayer boards are widely used due to their large wiring area and high assembly density. Please refer to Takahashi, A. et al., 1992, IEEE Trans.on Components, Packaging, and Manufacturing Technology, "High Density Layer printed". Circuit board for HITACM~880”. Moreover, the board not only needs to provide electrical connections for electronic components and the necessary mechanical support, but also has more functions.

厚銅線路板之線路厚度較大,因而具有能夠提供大電流、將電源集成、散熱性良好、控制特性阻抗等特性。在製作厚銅線路板之線路時,一般亦採用先前技術中之圖像轉移技術一次蝕刻成形。亦即,在銅箔表面形成圖案化之光阻層,然後通過銅蝕刻液蝕刻去除暴露出之銅箔,最後未被蝕刻之銅箔即構成線路。在先前技術製作厚銅線路板之方法中,存在以下兩個問題。第一,銅蝕刻液之蝕刻為各向同性,因而在銅蝕刻液自銅箔表面向下蝕刻之過 程中,還會侵蝕側面之銅箔,即蝕刻光阻下方之銅箔。在銅箔厚度較小之線路板中,由於蝕刻之時間較短,因此側面侵蝕之情況並不會對線路造成影響。然而,在厚銅線路板中,由於銅箔之厚度較大,需要較長之蝕刻時間,從而會加重側面侵蝕之情況,造成線路上方之寬度變小,嚴重地甚至可能蝕穿線路上部,從而造成光阻脫離於銅箔層,如此則會造成整個銅箔均被蝕刻而不能構成線路。第二,由於蝕刻之過程中,在蝕刻銅箔而在銅箔中形成凹陷之後,反應後之銅蝕刻液會易於聚集於這些凹陷之中,從而阻止未反應之銅蝕刻液進入凹陷之中,繼續向下蝕刻凹陷下之銅。亦即,“水池效應”會嚴重影響厚銅線路板中線路之製作,使得越下方之銅被蝕刻地越少。即,使得線路之形狀變成梯形,使得相鄰兩條線路越遠離光阻層之線距越小,甚至可能造成相鄰兩條線路相連接。以上兩個問題都影響了厚銅線路板之製作良率。 Thick copper circuit boards have a large thickness, and thus have the characteristics of being able to provide a large current, integrating power, good heat dissipation, and controlling characteristic impedance. In the production of thick copper circuit boards, the image transfer technique of the prior art is generally used for one etching. That is, a patterned photoresist layer is formed on the surface of the copper foil, and then the exposed copper foil is removed by etching with a copper etching solution, and finally the copper foil which is not etched constitutes a wiring. In the prior art method of manufacturing a thick copper wiring board, there are the following two problems. First, the etching of the copper etching solution is isotropic, so that the copper etching solution is etched downward from the surface of the copper foil. In the process, it will also erode the copper foil on the side, that is, the copper foil under the photoresist. In a circuit board having a small copper foil thickness, since the etching time is short, the side etching does not affect the wiring. However, in a thick copper circuit board, since the thickness of the copper foil is large, a long etching time is required, which may aggravate the side erosion, causing the width above the line to become small, and may even seriously erode the upper portion of the line. The photoresist is caused to detach from the copper foil layer, which causes the entire copper foil to be etched and cannot form a line. Secondly, after the etching process, after the copper foil is etched to form a recess in the copper foil, the copper etching solution after the reaction is likely to accumulate in the recesses, thereby preventing the unreacted copper etching liquid from entering the recess. Continue to etch down the copper under the recess. That is, the "pool effect" can seriously affect the fabrication of the lines in the thick copper circuit board, so that the lower copper is etched less. That is, the shape of the line is made trapezoidal, so that the distance between the adjacent two lines farther from the photoresist layer is smaller, and even the adjacent two lines may be connected. Both of these issues have affected the production yield of thick copper circuit boards.

有鑑於此,有必要提供一種可具有較高製作良率之電路板製作方法。 In view of this, it is necessary to provide a circuit board manufacturing method which can have a high manufacturing yield.

以下將以實施例說明一種電路板製作方法。 A method of fabricating a circuit board will be described below by way of example.

一種電路板製作方法,包括步驟:提供電路基板,所述電路基板具有銅箔層,所述銅箔層之厚度大於或等於100微米,所述銅箔層具有第一線路區、靠近第一線路區之第二線路區以及位於第一線路區與第二線路區之間之蝕刻區;以及通過兩次以上之蝕刻工序去除蝕刻區之銅箔層。每次蝕刻之前,在銅箔層表面形成圖案化之光阻層,以遮蔽第一線路區之銅箔層與第二線路區之銅箔層 ,並暴露出蝕刻區之銅箔層;每次蝕刻蝕刻區之銅箔層時,蝕刻深度在50微米至75微米之間;每次蝕刻之後均去除圖案化之光阻層,從而在去除蝕刻區之銅箔層後,使得第一線路區構成第一線路,使得第二線路區構成第二線路。 A circuit board manufacturing method comprising the steps of: providing a circuit substrate, wherein the circuit substrate has a copper foil layer, the copper foil layer has a thickness greater than or equal to 100 micrometers, and the copper foil layer has a first line region and is close to the first line a second line region of the region and an etch region between the first line region and the second line region; and removing the copper foil layer of the etched region by two or more etching processes. Before each etching, a patterned photoresist layer is formed on the surface of the copper foil layer to shield the copper foil layer of the first wiring region and the copper foil layer of the second wiring region And exposing the copper foil layer of the etched region; each etching the copper foil layer of the etched region, the etching depth is between 50 micrometers and 75 micrometers; the patterned photoresist layer is removed after each etching, thereby removing the etching After the copper foil layer of the region, the first line region constitutes the first line, such that the second line region constitutes the second line.

本技術方案之電路板製作方法中,採用兩次以上之蝕刻工序製作線路,相較於採用一次蝕刻工序製作線路之方法而言,可以降低銅蝕刻液各向同性之蝕刻與水池效應對線路形狀之影響,可以保證線路之形狀及尺寸,使得電路板之線路製作具有較高之良率。本技術方案之電路板製作方法可以獲得線寬較為一致之線路,或者說可以獲得形狀更接近長方形之線路。具體而言,在線路厚度在100微米以上時,通過兩次以上之蝕刻工序可以製作出線路各處之線寬差值在50微米以下之線路。並且,由於蝕刻工序非常成熟,成本亦較低,因此,即使採用兩次以上之蝕刻工序製作線路,亦並不會影響電路板製作之成本與效率。 In the circuit board manufacturing method of the technical solution, the circuit is formed by using two or more etching processes, and the isotropic etching and pool effect of the copper etching solution can be reduced compared with the method of fabricating the circuit by using one etching process. The influence of the circuit can ensure the shape and size of the circuit, so that the circuit board production has a high yield. The circuit board manufacturing method of the present technical solution can obtain a line having a relatively uniform line width, or a line having a shape closer to a rectangle. Specifically, when the line thickness is 100 μm or more, a line having a line width difference of 50 μm or less across the line can be produced by two or more etching processes. Moreover, since the etching process is very mature and the cost is low, even if the circuit is fabricated by using two or more etching processes, the cost and efficiency of the board manufacturing are not affected.

10‧‧‧電路基板 10‧‧‧ circuit board

11‧‧‧基底層 11‧‧‧ basal layer

12‧‧‧銅箔層 12‧‧‧copper layer

121‧‧‧第一線路區 121‧‧‧First line area

122‧‧‧第二線路區 122‧‧‧Second line area

123‧‧‧第一蝕刻區 123‧‧‧First etching zone

124‧‧‧第二蝕刻區 124‧‧‧Second etched area

125‧‧‧第三蝕刻區 125‧‧‧ Third etching zone

21‧‧‧第一光阻層 21‧‧‧First photoresist layer

131‧‧‧第一凸起 131‧‧‧First bulge

132‧‧‧第二凸起 132‧‧‧second bulge

141‧‧‧第一開口 141‧‧‧ first opening

142‧‧‧第二開口 142‧‧‧ second opening

143‧‧‧第三開口 143‧‧‧ third opening

22‧‧‧第二光阻層 22‧‧‧Second photoresist layer

133‧‧‧第三凸起 133‧‧‧3rd bulge

134‧‧‧第四凸起 134‧‧‧fourth bulge

144‧‧‧第四開口 144‧‧‧fourth opening

145‧‧‧第五開口 145‧‧‧ fifth opening

146‧‧‧第六開口 146‧‧‧ sixth opening

23‧‧‧第三光阻層 23‧‧‧ Third photoresist layer

135‧‧‧第五凸起 135‧‧‧5th bulge

136‧‧‧第六凸起 136‧‧‧ sixth bulge

147‧‧‧第七開口 147‧‧‧ seventh opening

148‧‧‧第八開口 148‧‧‧ eighth opening

149‧‧‧第九開口 149‧‧‧ ninth opening

15‧‧‧第一線路 15‧‧‧First line

16‧‧‧第二線路 16‧‧‧second line

17‧‧‧間隔空間 17‧‧‧Interval space

151‧‧‧第一底面 151‧‧‧ first bottom surface

152‧‧‧第一頂面 152‧‧‧ first top surface

153‧‧‧第一側面 153‧‧‧ first side

161‧‧‧第二底面 161‧‧‧second bottom surface

162‧‧‧第二頂面 162‧‧‧Second top

163‧‧‧第二側面 163‧‧‧ second side

圖1為本技術方案實施例提供之電路基板之剖視示意圖。 FIG. 1 is a cross-sectional view of a circuit substrate according to an embodiment of the present technical solution.

圖2為本技術方案實施例提供之在電路基板表面形成第一光阻層之剖視示意圖。 2 is a schematic cross-sectional view showing a first photoresist layer formed on a surface of a circuit substrate according to an embodiment of the present disclosure.

圖3為本技術方案實施例提供之在圖案化第一光阻層後之剖視示意圖。 FIG. 3 is a cross-sectional view of the first photoresist layer after patterning according to an embodiment of the present disclosure.

圖4為本技術方案實施例提供之第一次蝕刻電路基板後之剖視示意圖。 FIG. 4 is a cross-sectional view showing the first etching of the circuit substrate provided by the embodiment of the present technical solution.

圖5為本技術方案實施例提供之去除第一光阻層後之剖視示意圖。 FIG. 5 is a cross-sectional view of the first photoresist layer after removing the first photoresist layer according to an embodiment of the present disclosure.

圖6為本技術方案實施例提供之在電路基板表面形成第二光阻層之剖視示意圖。 FIG. 6 is a cross-sectional view showing a second photoresist layer formed on a surface of a circuit substrate according to an embodiment of the present disclosure.

圖7為本技術方案實施例提供之在圖案化第二光阻層後之剖視示意圖。 FIG. 7 is a schematic cross-sectional view of the embodiment of the present invention after the second photoresist layer is patterned.

圖8為本技術方案實施例提供之第二次蝕刻電路基板後之剖視示意圖。 FIG. 8 is a cross-sectional view showing the second etching of the circuit substrate according to the embodiment of the present application.

圖9為本技術方案實施例提供之去除第二光阻層後之剖視示意圖。 FIG. 9 is a cross-sectional view showing the second photoresist layer removed after the embodiment of the present invention is removed.

圖10為本技術方案實施例提供之在電路基板表面形成第三光阻層之剖視示意圖。 FIG. 10 is a cross-sectional view showing a third photoresist layer formed on a surface of a circuit substrate according to an embodiment of the present disclosure.

圖11為本技術方案實施例提供之在圖案化第三光阻層後之剖視示意圖。 FIG. 11 is a cross-sectional view showing the third photoresist layer after patterning according to an embodiment of the present disclosure.

圖12為本技術方案實施例提供之第三次蝕刻電路基板後之剖視示意圖。 FIG. 12 is a cross-sectional view showing the third etching of the circuit substrate according to the embodiment of the present application.

圖13為本技術方案實施例提供之去除第三光阻層後之剖視示意圖。 FIG. 13 is a cross-sectional view of the third photoresist layer after removing the third photoresist layer according to an embodiment of the present disclosure.

下面將結合附圖及實施例,對本技術方案提供之電路板製作方法作進一步之詳細說明。 The method for fabricating the circuit board provided by the technical solution will be further described in detail below with reference to the accompanying drawings and embodiments.

本技術方案實施方式提供之電路板製作方法,包括步驟:第一步,請參閱圖1,提供電路基板10。所述電路基板10包括基底層11及貼合於基底層11表面之銅箔層12。所述基底層11可以為僅包括絕緣層,還可以為包括至少一層絕緣層與至少一層導電層之結構。亦即,電路基板10可為單面覆銅基材,亦可為雙面覆銅基材,還可為多層電路基材。所述多層電路基材係指已形成內層線路,尚未製作外層線路之基板。在本實施例中,所述電路基板10為單面覆銅基材,即基底層11為絕緣層。所述絕緣層之材料為硬性材料,如環氧樹脂、玻纖布等,但亦可為柔性材料,例如聚醯亞胺(Polyimide,PI)、聚乙烯對苯二甲酸乙二醇酯(Polyethylene Terephthalate,PET)、聚萘二甲酸乙二醇酯(Polyethylene naphthalate,PEN)等。所述銅箔層12一般為電鍍銅箔、壓延銅箔或者為包括壓延銅箔與電解銅箔之複合結構。銅箔層12之厚度大於或等於100微米,一般來說,可以在140微米至250微米之間。 The circuit board manufacturing method provided by the embodiment of the present technical solution includes the following steps: First, referring to FIG. 1, the circuit substrate 10 is provided. The circuit substrate 10 includes a base layer 11 and a copper foil layer 12 bonded to the surface of the base layer 11. The base layer 11 may include only an insulating layer, and may also be a structure including at least one insulating layer and at least one conductive layer. That is, the circuit substrate 10 may be a single-sided copper-clad substrate, a double-sided copper-clad substrate, or a multilayer circuit substrate. The multilayer circuit substrate refers to a substrate on which an inner layer line has been formed, and an outer layer line has not been formed. In the embodiment, the circuit substrate 10 is a single-sided copper-clad substrate, that is, the base layer 11 is an insulating layer. The material of the insulating layer is a hard material, such as an epoxy resin, a fiberglass cloth, etc., but may also be a flexible material, such as Polyimide (PI), polyethylene terephthalate (Polyethylene). Terephthalate, PET), polyethylene naphthalate (PEN), and the like. The copper foil layer 12 is generally an electroplated copper foil, a rolled copper foil or a composite structure including a rolled copper foil and an electrolytic copper foil. The thickness of the copper foil layer 12 is greater than or equal to 100 microns and, in general, may be between 140 microns and 250 microns.

所述銅箔層12用於形成導電線路,因此,銅箔層12包括複數用於形成線路之線路區與複數待去除之蝕刻區。在本實施例中,以銅箔層12包括兩個線路區與三個蝕刻區為例進行說明。亦即,在本實施例中,銅箔層12包括第一線路區121、第二線路區122、第一蝕刻區123、第二蝕刻區124及第三蝕刻區125。所述第一線路區121位於第一蝕刻區123與第二蝕刻區124之間,所述第一蝕刻區123位於第一線路區121與第二線路區122之間,所述第二線路區122位於第一蝕刻區123與第三蝕刻區125之間。 The copper foil layer 12 is used to form a conductive trace. Therefore, the copper foil layer 12 includes a plurality of wiring regions for forming a wiring and a plurality of etching regions to be removed. In the present embodiment, the copper foil layer 12 includes two line regions and three etching regions as an example for description. That is, in the present embodiment, the copper foil layer 12 includes a first wiring region 121, a second wiring region 122, a first etching region 123, a second etching region 124, and a third etching region 125. The first line region 121 is located between the first etch region 123 and the second etch region 124. The first etch region 123 is located between the first line region 121 and the second line region 122, and the second line region 122 is located between the first etched region 123 and the third etched region 125.

第二步,通過兩次以上之蝕刻工序去除第一蝕刻區123、第二蝕刻區124及第三蝕刻區125之銅箔層12,每次蝕刻之蝕刻深度為50微米至75微米。 In the second step, the copper foil layer 12 of the first etched region 123, the second etched region 124, and the third etched region 125 is removed by two or more etching processes, and the etching depth is etched from 50 micrometers to 75 micrometers per etching.

在本實施例中,銅箔層12之厚度為210微米,通過三次蝕刻工序去除第一蝕刻區123、第二蝕刻區124及第三蝕刻區125之銅箔層12。以下對第一次蝕刻工序、第二次蝕刻工序及第三次蝕刻工序進行具體說明。 In the present embodiment, the thickness of the copper foil layer 12 is 210 micrometers, and the copper foil layer 12 of the first etching region 123, the second etching region 124, and the third etching region 125 is removed by a three-time etching process. Hereinafter, the first etching step, the second etching step, and the third etching step will be specifically described.

請參閱圖2至圖5,第一次蝕刻工序可以包括以下步驟:首先,請參閱圖2,在銅箔層12表面形成第一光阻層21。所述第一光阻層21可通過在銅箔層12表面塗覆液態光阻油墨之方法形成。 Referring to FIG. 2 to FIG. 5 , the first etching process may include the following steps: First, referring to FIG. 2 , a first photoresist layer 21 is formed on the surface of the copper foil layer 12 . The first photoresist layer 21 can be formed by applying a liquid photoresist ink to the surface of the copper foil layer 12.

其次,通過曝光、顯影工藝去除部分第一光阻層21,以形成圖案化之第一光阻層21,如圖3所示。圖案化之第一光阻層21遮蔽第一線路區121之銅箔層12與第二線路區122之銅箔層12,並暴露出第一蝕刻區123、第二蝕刻區124及第三蝕刻區125之銅箔層12。 Next, a portion of the first photoresist layer 21 is removed by an exposure and development process to form a patterned first photoresist layer 21, as shown in FIG. The patterned first photoresist layer 21 shields the copper foil layer 12 of the first wiring region 121 and the copper foil layer 12 of the second wiring region 122, and exposes the first etching region 123, the second etching region 124, and the third etching. The copper foil layer 12 of the region 125.

再次,通過銅蝕刻液第一次蝕刻暴露出之第一蝕刻區123、第二蝕刻區124及第三蝕刻區125之銅箔層12,直至第一蝕刻區123、第二蝕刻區124及第三蝕刻區125之銅箔層12被蝕刻掉50微米至75微米。所述銅蝕刻液可以為氯化銅系蝕刻液、氯化鐵系蝕刻液、硫酸/過氧化氫系蝕刻液。 Again, the copper etch layer 12 of the first etched region 123, the second etched region 124, and the third etched region 125 is exposed to the first etched region 123, the second etched region 124, and the first etched region by a copper etchant. The copper foil layer 12 of the triple etched region 125 is etched away from 50 microns to 75 microns. The copper etching solution may be a copper chloride-based etching solution, a ferric chloride-based etching solution, or a sulfuric acid/hydrogen peroxide-based etching solution.

在第一次蝕刻之過程中,銅蝕刻液基本上會自銅箔層12之表面向下蝕刻,銅箔層12被蝕刻掉之厚度即為蝕刻深度。在本實施例中 ,第一次蝕刻之蝕刻深度為70微米。由於蝕刻之各向同性,因此,在第一線路區121與第二線路區122中,靠近第一蝕刻區123、第二蝕刻區124及第三蝕刻區125之銅箔層12可能有少部分亦被蝕刻掉。蝕刻之後,在第一線路區121形成第一凸起131,在第二線路區122形成第二凸起132,在第一蝕刻區123形成第一開口141,在第二蝕刻區124形成第二開口142,在第三蝕刻區125形成第三開口143,如圖4所示。由於水池效應,第一凸起131之橫截面與第二凸起132之橫截面均基本近似於梯形,而第二開口142之橫截面基本為倒梯形。 During the first etching, the copper etching solution is substantially etched downward from the surface of the copper foil layer 12, and the thickness of the copper foil layer 12 is etched away to be the etching depth. In this embodiment The etching depth of the first etching was 70 microns. Due to the isotropy of the etch, in the first line region 121 and the second line region 122, the copper foil layer 12 adjacent to the first etch region 123, the second etch region 124, and the third etch region 125 may have a small portion. Also etched away. After the etching, a first bump 131 is formed in the first wiring region 121, a second bump 132 is formed in the second wiring region 122, a first opening 141 is formed in the first etching region 123, and a second opening is formed in the second etching region 124. The opening 142 forms a third opening 143 in the third etched region 125, as shown in FIG. Due to the pool effect, the cross section of the first protrusion 131 and the second protrusion 132 are substantially similar to the trapezoid, and the second opening 142 has a substantially inverted cross section.

最後,請參閱圖5,第一次蝕刻後,去除圖案化之第一光阻層21。第一光阻層21可以採用強鹼液溶解之方法去除。 Finally, referring to FIG. 5, after the first etching, the patterned first photoresist layer 21 is removed. The first photoresist layer 21 can be removed by a method of dissolving a strong alkali solution.

第一次蝕刻工序之後可進行第二次蝕刻工序,第二次蝕刻工序可採用近似於第一次蝕刻工序之步驟,如圖6至圖9所示:首先,請參閱圖6,在銅箔層12表面形成第二光阻層22。即,第二光阻層22分佈在第一開口141之底面、第一凸起131之表面、第二凸起132之表面、第二開口142之底面以及第三開口143之底面。第二光阻層22亦可為液態光阻油墨。 A second etching process may be performed after the first etching process, and a second etching process may be performed similar to the first etching process, as shown in FIGS. 6 to 9 : First, please refer to FIG. 6 , in the copper foil A second photoresist layer 22 is formed on the surface of the layer 12. That is, the second photoresist layer 22 is distributed on the bottom surface of the first opening 141, the surface of the first protrusion 131, the surface of the second protrusion 132, the bottom surface of the second opening 142, and the bottom surface of the third opening 143. The second photoresist layer 22 can also be a liquid photoresist ink.

其次,通過曝光、顯影工藝去除部分第二光阻層22,以形成圖案化之第二光阻層22,如圖7所示。圖案化之第二光阻層22遮蔽第一線路區121之銅箔層12之表面與第二線路區122之銅箔層12之表面,並暴露出第一蝕刻區123、第二蝕刻區124及第三蝕刻區125之銅箔層12。亦即,圖案化之第二光阻層22遮蔽第一凸起131之 表面與第二凸起132之表面,並暴露出第一開口141之底面、第二開口142之底面以及第三開口143之底面。 Next, a portion of the second photoresist layer 22 is removed by an exposure and development process to form a patterned second photoresist layer 22, as shown in FIG. The patterned second photoresist layer 22 shields the surface of the copper foil layer 12 of the first wiring region 121 and the surface of the copper foil layer 12 of the second wiring region 122, and exposes the first etching region 123 and the second etching region 124. And a copper foil layer 12 of the third etched region 125. That is, the patterned second photoresist layer 22 shields the first protrusion 131 The surface and the surface of the second protrusion 132 expose the bottom surface of the first opening 141, the bottom surface of the second opening 142, and the bottom surface of the third opening 143.

再次,通過銅蝕刻液第二次蝕刻暴露出之第一蝕刻區123、第二蝕刻區124及第三蝕刻區125之銅箔層12,直至第一蝕刻區123、第二蝕刻區124及第三蝕刻區125之銅箔層12被蝕刻掉50微米至75微米。在本實施例中,第二次蝕刻之蝕刻深度亦為70微米。 Again, the copper etch layer 12 of the first etched region 123, the second etched region 124, and the third etched region 125 is exposed through the copper etchant for a second time, until the first etched region 123, the second etched region 124, and the first etched region The copper foil layer 12 of the triple etched region 125 is etched away from 50 microns to 75 microns. In this embodiment, the etching depth of the second etching is also 70 micrometers.

在第二次蝕刻後,在第一線路區121形成連接於第一凸起131下方之第三凸起133,在第二線路區122形成連接於第二凸起132下方之第四凸起134,在第一蝕刻區123形成連通於第一開口141下方之第四開口144,在第二蝕刻區124形成連通於第二開口142下方之第五開口145,在第三蝕刻區125形成連通於第三開口143下方之第六開口146,如圖8所示。第三凸起133之橫截面近似於梯形,第四凸起134之橫截面亦近似於梯形。 After the second etching, a third protrusion 133 connected under the first protrusion 131 is formed in the first line region 121, and a fourth protrusion 134 connected under the second protrusion 132 is formed in the second line region 122. Forming a fourth opening 144 under the first opening 141 in the first etched region 123, forming a fifth opening 145 under the second opening 142 in the second etched region 124, and forming a communication in the third etched region 125 The sixth opening 146 below the third opening 143 is as shown in FIG. The cross section of the third protrusion 133 is approximately trapezoidal, and the cross section of the fourth protrusion 134 is also approximately trapezoidal.

另外,由於蝕刻之各向同性,因此,在第一線路區121與第二線路區122中,靠近第一蝕刻區123、第二蝕刻區124及第三蝕刻區125之銅箔層12可能有少部分亦被蝕刻掉,從而第一凸起131與第三凸起133之連接處可能存在一突刺,在第二凸起132與第四凸起134之連接處可能亦存在一突刺。 In addition, since the etching is isotropic, in the first line region 121 and the second line region 122, the copper foil layer 12 adjacent to the first etching region 123, the second etching region 124, and the third etching region 125 may have A small portion is also etched away, so that there may be a spur at the junction of the first protrusion 131 and the third protrusion 133, and a spur may also exist at the junction of the second protrusion 132 and the fourth protrusion 134.

最後,請參閱圖9,去除圖案化之第二光阻層22。 Finally, referring to FIG. 9, the patterned second photoresist layer 22 is removed.

第二次蝕刻工序之後可進行第三次蝕刻工序,第三次蝕刻工序可採用近似於第一次蝕刻工序之步驟,如圖10至圖13所示:首先,請參閱圖10,在銅箔層12表面形成第三光阻層23。即,第 三光阻層23分佈在第四開口144之底面、第一凸起131與第三凸起133之表面、第二凸起132與第四凸起134之表面、第五開口145之底面以及第六開口146之底面。第三光阻層23亦可為液態光阻油墨。 A third etching process may be performed after the second etching process, and a third etching process may be performed in a step similar to the first etching process, as shown in FIGS. 10 to 13 : First, please refer to FIG. 10 , in the copper foil A third photoresist layer 23 is formed on the surface of the layer 12. That is, the first The three photoresist layers 23 are distributed on the bottom surface of the fourth opening 144, the surfaces of the first protrusions 131 and the third protrusions 133, the surfaces of the second protrusions 132 and the fourth protrusions 134, the bottom surface of the fifth opening 145, and the sixth The bottom surface of the opening 146. The third photoresist layer 23 can also be a liquid photoresist ink.

其次,通過曝光、顯影工序去除部分第三光阻層23,以形成圖案化之第三光阻層23,如圖11所示。圖案化之第三光阻層23遮蔽第一線路區121之銅箔層12之表面與第二線路區122之銅箔層12之表面,並暴露出第一蝕刻區123、第二蝕刻區124及第三蝕刻區125之銅箔層12。亦即,圖案化之第三光阻層23遮蔽第一凸起131之表面、第二凸起132之表面、第三凸起133之表面及第四凸起134之表面,並暴露出第四開口144之底面、第五開口145之底面以及第六開口146之底面。 Next, a portion of the third photoresist layer 23 is removed by an exposure and development process to form a patterned third photoresist layer 23, as shown in FIG. The patterned third photoresist layer 23 shields the surface of the copper foil layer 12 of the first wiring region 121 and the surface of the copper foil layer 12 of the second wiring region 122, and exposes the first etching region 123 and the second etching region 124. And a copper foil layer 12 of the third etched region 125. That is, the patterned third photoresist layer 23 shields the surface of the first protrusion 131, the surface of the second protrusion 132, the surface of the third protrusion 133, and the surface of the fourth protrusion 134, and exposes the fourth The bottom surface of the opening 144, the bottom surface of the fifth opening 145, and the bottom surface of the sixth opening 146.

再次,通過銅蝕刻液第三次蝕刻暴露出之第一蝕刻區123、第二蝕刻區124及第三蝕刻區125之銅箔層12,直至第一蝕刻區123、第二蝕刻區124及第三蝕刻區125之銅箔層12被完全蝕刻去除,從而暴露出第一蝕刻區123、第二蝕刻區124及第三蝕刻區125相對應之基底層11。在本實施例中,第三次蝕刻之蝕刻深度亦為70微米。 Again, the copper etch layer 12 of the first etched region 123, the second etched region 124, and the third etched region 125 is exposed through the copper etching solution for a third time, until the first etched region 123, the second etched region 124, and the first etched region The copper foil layer 12 of the triple etched region 125 is completely etched away to expose the base layer 11 corresponding to the first etched region 123, the second etched region 124, and the third etched region 125. In this embodiment, the etching depth of the third etching is also 70 μm.

在第三次蝕刻後,在第一線路區121形成連接於第三凸起133下方之第五凸起135,在第二線路區122形成連接於第四凸起134下方之第六凸起136,在第一蝕刻區123形成連通於第四開口144下方之第七開口147,在第二蝕刻區124形成連通於第五開口145下方之第八開口148,在第三蝕刻區125形成連通於第六開口146下方 之第九開口149,如圖12所示。第五凸起135之橫截面近似於梯形,第六凸起136之橫截面亦近似於梯形。第一凸起131、第三凸起133及第五凸起135依次連接,構成第一線路15。第二凸起132、第四凸起134及第六凸起136依次連接,構成第二線路16。第一線路15與第二線路16被第一開口141、第四開口144及第七開口147連通構成之間隔空間17分隔開。 After the third etching, a fifth protrusion 135 connected under the third protrusion 133 is formed in the first line region 121, and a sixth protrusion 136 connected under the fourth protrusion 134 is formed in the second line region 122. Forming a seventh opening 147 under the fourth opening 144 in the first etched region 123, forming an eighth opening 148 under the fifth opening 145 in the second etched region 124, and forming a communication in the third etched region 125 Below the sixth opening 146 The ninth opening 149 is as shown in FIG. The cross section of the fifth protrusion 135 is approximately trapezoidal, and the cross section of the sixth protrusion 136 is also approximately trapezoidal. The first protrusions 131, the third protrusions 133, and the fifth protrusions 135 are sequentially connected to constitute the first line 15. The second protrusion 132, the fourth protrusion 134, and the sixth protrusion 136 are sequentially connected to constitute the second line 16. The first line 15 and the second line 16 are separated by a space 17 formed by the first opening 141, the fourth opening 144, and the seventh opening 147.

另外,由於蝕刻之各向同性,因此在第一線路區121與第二線路區122中,靠近第一蝕刻區123、第二蝕刻區124及第三蝕刻區125之銅箔層12可能有少部分亦被蝕刻掉,從而第五凸起135與第三凸起133之連接處可能存在一突刺,在第六凸起136與第四凸起134之連接處可能亦存在一突刺。 In addition, since the etching is isotropic, the copper foil layer 12 adjacent to the first etching region 123, the second etching region 124, and the third etching region 125 may be less in the first wiring region 121 and the second wiring region 122. The portion is also etched away, so that there may be a spur at the junction of the fifth protrusion 135 and the third protrusion 133, and there may also be a spur at the junction of the sixth protrusion 136 and the fourth protrusion 134.

最後,請參閱圖13,去除圖案化之第三光阻層23。如此,即可獲得具有基底層11及形成在基底層11表面之第一線路15與第二線路16之電路板100。 Finally, referring to FIG. 13, the patterned third photoresist layer 23 is removed. Thus, the circuit board 100 having the base layer 11 and the first line 15 and the second line 16 formed on the surface of the base layer 11 can be obtained.

第一線路15具有與基底層11接觸之第一底面151、與第一底面151相對之第一頂面152以及兩個連接在第一底面151與第一頂面152之間之第一側面153。第一底面151之寬度與第一頂面152之寬度相近。基本上,第一底面151與第一頂面152之高度大於或等於100微米,第一底面151之寬度與第一頂面152之寬度之差值小於或等於50微米。或者說,第一線路15靠近基底層11之線寬與遠離基底層11之線寬之差值小於或等於50微米。 The first line 15 has a first bottom surface 151 in contact with the base layer 11, a first top surface 152 opposite to the first bottom surface 151, and two first side surfaces 153 connected between the first bottom surface 151 and the first top surface 152. . The width of the first bottom surface 151 is similar to the width of the first top surface 152. Basically, the height of the first bottom surface 151 and the first top surface 152 is greater than or equal to 100 microns, and the difference between the width of the first bottom surface 151 and the width of the first top surface 152 is less than or equal to 50 microns. In other words, the difference between the line width of the first line 15 near the base layer 11 and the line width away from the base layer 11 is less than or equal to 50 microns.

第二線路16具有與基底層11接觸之第二底面161、與第二底面161 相對之第二頂面162以及兩個連接在第二底面161與第二頂面162之間之第二側面163。第二底面161之寬度與第二頂面162之寬度相近。基本上,第二底面161與第二頂面162之高度大於或等於100微米,第二底面161之寬度與第二頂面162之寬度之差值小於或等於50微米。或者說,第二線路16靠近基底層11之線寬與遠離基底層11之線寬之差值小於或等於50微米。整條第二線路16之線寬較為一致。 The second line 16 has a second bottom surface 161 and a second bottom surface 161 that are in contact with the base layer 11. The second top surface 162 and the second side surface 163 connected between the second bottom surface 161 and the second top surface 162 are opposite to each other. The width of the second bottom surface 161 is similar to the width of the second top surface 162. Basically, the height of the second bottom surface 161 and the second top surface 162 is greater than or equal to 100 micrometers, and the difference between the width of the second bottom surface 161 and the width of the second top surface 162 is less than or equal to 50 micrometers. In other words, the difference between the line width of the second line 16 near the base layer 11 and the line width away from the base layer 11 is less than or equal to 50 microns. The line width of the entire second line 16 is relatively uniform.

整條第一線路15之線寬較為一致,整條第二線路16之線寬亦較為一致,從而,第一線路15與第二線路16之間之線距亦基本較為一致。一般來說,第一線路15與第二線路16之厚度在100微米以上,第一線路15與第二線路16之線寬均在100微米以上,第一線路15與第二線路16之線距亦均在100微米以上。 The line width of the entire first line 15 is relatively uniform, and the line width of the entire second line 16 is also relatively uniform, so that the line spacing between the first line 15 and the second line 16 is substantially uniform. Generally, the thickness of the first line 15 and the second line 16 is 100 μm or more, and the line widths of the first line 15 and the second line 16 are both 100 μm or more, and the line distance between the first line 15 and the second line 16 is Also above 100 microns.

本實施例中,每個第一側面153及每個第二側面163均具有兩個突刺。本領域技術人員可以理解,在多次蝕刻形成第一線路15與第二線路16之過程中,可以選擇適當之銅蝕刻液,並控制蝕刻條件與蝕刻時間,從而避免在線路側面形成突刺。另外,即使如本實施例所示,形成了側面具有突刺之第一線路15與第二線路16,但由於突刺十分微小,因而並不會對第一線路15與第二線路16之傳輸性能造成影響。如果對線路之形狀存在要求,可以通過後續磨刷、微蝕之方法去除存在於線路側面之突刺。 In this embodiment, each of the first side surface 153 and each of the second side surfaces 163 has two spurs. Those skilled in the art will appreciate that during the multiple etching to form the first line 15 and the second line 16, a suitable copper etchant can be selected and the etching conditions and etching time can be controlled to avoid the formation of spurs on the sides of the line. Further, even as shown in the present embodiment, the first line 15 and the second line 16 having the spurs on the side are formed, but since the spurs are minute, the transmission performance of the first line 15 and the second line 16 is not caused. influences. If there is a requirement for the shape of the line, the spurs existing on the side of the line can be removed by subsequent grinding and micro-etching.

本實施例中係通過三次蝕刻工序製作厚度為210微米之第一線路15與第二線路16為例進行說明電路板之製作方法。本領域技術人員可以理解,當銅箔層12之厚度為其他數值時,即第一線路15與 第二線路16之厚度為其他數值時,可以通過其他次數之蝕刻工序製作。例如,當銅箔層12之厚度為100微米至150微米時,可以通過兩次蝕刻工序製作形成第一線路15與第二線路16;當銅箔層12之厚度為150微米至220微米時,可以通過三次蝕刻工序製作形成第一線路15與第二線路16;當銅箔層12之厚度為220微米至290微米時,可以通過四次蝕刻工序製作形成第一線路15與第二線路16。在製作線路時,僅需使得第一次蝕刻之蝕刻深度為50微米至75微米,當第一次蝕刻後蝕刻區剩餘之銅箔層12之厚度小於或等於75微米時,第二次蝕刻即可完全去除蝕刻區之銅箔層12;當第一次蝕刻後蝕刻區之銅箔層12之剩餘厚度大於75微米時,第二次蝕刻去除50微米至75微米之蝕刻區之銅箔層12;當第二次蝕刻後蝕刻區剩餘之銅箔層12之厚度小於或等於75微米時,第三次蝕刻即可完全去除蝕刻區之銅箔層12;當第二次蝕刻後蝕刻區之銅箔層12之剩餘厚度大於75微米時,則需要第三次,第四次乃至更多次之蝕刻工序方能完全去除蝕刻區之銅箔層12。當然,每次蝕刻時,銅箔層12之蝕刻深度均為50微米至75微米。 In the present embodiment, the first circuit 15 and the second line 16 having a thickness of 210 μm are formed by three etching processes as an example to describe a method of fabricating the circuit board. Those skilled in the art can understand that when the thickness of the copper foil layer 12 is other values, that is, the first line 15 and When the thickness of the second line 16 is other values, it can be produced by another number of etching processes. For example, when the thickness of the copper foil layer 12 is from 100 micrometers to 150 micrometers, the first line 15 and the second line 16 may be formed by two etching processes; when the thickness of the copper foil layer 12 is from 150 micrometers to 220 micrometers, The first line 15 and the second line 16 can be formed by three etching processes; when the thickness of the copper foil layer 12 is 220 micrometers to 290 micrometers, the first line 15 and the second line 16 can be formed by four etching processes. When making the circuit, it is only necessary to make the etching depth of the first etching to be 50 micrometers to 75 micrometers. When the thickness of the remaining copper foil layer 12 in the etching region after the first etching is less than or equal to 75 micrometers, the second etching is performed. The copper foil layer 12 of the etched region can be completely removed; when the remaining thickness of the copper foil layer 12 of the etched region after the first etching is greater than 75 micrometers, the second etching removes the copper foil layer 12 of the etched region of 50 micrometers to 75 micrometers. When the thickness of the remaining copper foil layer 12 in the etched area after the second etching is less than or equal to 75 micrometers, the third etching can completely remove the copper foil layer 12 of the etched region; when the second etching is performed, the copper of the etched region When the remaining thickness of the foil layer 12 is greater than 75 microns, a third, fourth or even more etching process is required to completely remove the copper foil layer 12 of the etched region. Of course, the etching depth of the copper foil layer 12 is 50 micrometers to 75 micrometers per etching.

需要說明,本實施例中僅以製作兩條線路,即第一線路15與第二線路16為例說明製作電路板之方法。事實上,在製作電路板時,線路之數量不限,可以為一條或兩條以上,一般來說,為十條以上。 It should be noted that, in this embodiment, only two lines, that is, the first line 15 and the second line 16 are taken as an example to describe a method for manufacturing a circuit board. In fact, when making a circuit board, the number of lines is not limited, and may be one or more, and in general, more than ten.

本技術方案之製作電路板100之方法中,採用兩次以上之蝕刻工序製作線路,相較於採用一次蝕刻工序製作線路之方法而言,可以降低銅蝕刻液各向同性之蝕刻與水池效應對線路形狀之影響, 可以保證線路之形狀及尺寸,使得電路板100之線路製作具有較高之良率。本技術方案之電路板製作方法可以獲得線寬較為一致之線路,或者說可以獲得形狀更接近長方形之線路。具體而言,在線路厚度在100微米以上時,通過兩次以上之蝕刻工序可以製作出線路各處之線寬差值在50微米以下之線路。並且,由於蝕刻工序非常成熟,成本亦較低,因此,即使採用兩次以上之蝕刻工序製作線路,亦並不會影響電路板製作之成本與效率。 In the method for fabricating the circuit board 100 of the present technical solution, the circuit is formed by using two or more etching processes, and the isotropic etching and pool effect of the copper etching solution can be reduced compared with the method of fabricating the circuit by using one etching process. The influence of the shape of the line, The shape and size of the circuit can be ensured, so that the circuit of the circuit board 100 has a high yield. The circuit board manufacturing method of the present technical solution can obtain a line having a relatively uniform line width, or a line having a shape closer to a rectangle. Specifically, when the line thickness is 100 μm or more, a line having a line width difference of 50 μm or less across the line can be produced by two or more etching processes. Moreover, since the etching process is very mature and the cost is low, even if the circuit is fabricated by using two or more etching processes, the cost and efficiency of the board manufacturing are not affected.

綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施方式,自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士爰依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。 In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

11‧‧‧基底層 11‧‧‧ basal layer

12‧‧‧銅箔層 12‧‧‧copper layer

22‧‧‧第二光阻層 22‧‧‧Second photoresist layer

133‧‧‧第三凸起 133‧‧‧3rd bulge

134‧‧‧第四凸起 134‧‧‧fourth bulge

144‧‧‧第四開口 144‧‧‧fourth opening

145‧‧‧第五開口 145‧‧‧ fifth opening

146‧‧‧第六開口 146‧‧‧ sixth opening

Claims (10)

一種電路板製作方法,包括步驟:提供電路基板,所述電路基板包括銅箔層,所述銅箔層之厚度大於或等於100微米,所述銅箔層具有第一線路區、靠近第一線路區之第二線路區以及位於第一線路區與第二線路區之間之第一蝕刻區;以及通過兩次以上之蝕刻工序去除第一蝕刻區之銅箔層,從而在去除第一蝕刻區之銅箔層後,使得第一線路區構成第一線路,使得第二線路區構成第二線路,所述電路基板還包括與銅箔層相接觸之基底層,所述第一線路具有與基底層接觸之第一底面、與第一底面相對之第一頂面,第一底面之寬度與第一頂面之寬度之差值小於或等於50微米,其中,每次蝕刻工序均包括步驟:在銅箔層表面形成圖案化之光阻層,以遮蔽第一線路區之銅箔層與第二線路區之銅箔層,並暴露出第一蝕刻區之銅箔層;蝕刻第一蝕刻區之銅箔層,蝕刻深度在50微米至75微米之間;去除圖案化之光阻層。 A circuit board manufacturing method comprising the steps of: providing a circuit substrate, the circuit substrate comprising a copper foil layer, the copper foil layer having a thickness greater than or equal to 100 micrometers, the copper foil layer having a first line region and being close to the first line a second line region of the region and a first etch region between the first line region and the second line region; and removing the copper foil layer of the first etch region by two or more etching processes, thereby removing the first etch region After the copper foil layer, the first line region constitutes the first line, such that the second line region constitutes the second line, the circuit substrate further includes a base layer in contact with the copper foil layer, the first line having the base The first bottom surface of the layer contact, the first top surface opposite to the first bottom surface, the difference between the width of the first bottom surface and the width of the first top surface is less than or equal to 50 micrometers, wherein each etching step comprises the steps of: Forming a patterned photoresist layer on the surface of the copper foil layer to shield the copper foil layer of the first wiring region and the copper foil layer of the second wiring region, and exposing the copper foil layer of the first etching region; etching the first etching region Copper foil layer, etching Of between 50 microns to 75 microns; removing the patterned photoresist layer. 如申請專利範圍第1項所述之電路板製作方法,其中,所述銅箔層還具有第二蝕刻區與第三蝕刻區,所述第一線路區位於第二蝕刻區與第一蝕刻區之間,所述第二線路區位於第三蝕刻區與第一蝕刻區之間,在通過兩次以上之蝕刻工序去除第一蝕刻區之銅箔層之同時,還去除第二蝕刻區與第三蝕刻區之銅箔層。 The method for fabricating a circuit board according to claim 1, wherein the copper foil layer further has a second etching region and a third etching region, wherein the first wiring region is located in the second etching region and the first etching region. Between the third etched region and the first etched region, the second etched region and the second etched region are removed while removing the copper foil layer of the first etched region by two or more etching processes. A copper foil layer of the triple etched area. 如申請專利範圍第1項所述之電路板製作方法,其中,所述電路 基板還包括與銅箔層相接觸之基底層,在去除第一蝕刻區之銅箔層後,暴露出與第一蝕刻區相對應之基底層。 The method for fabricating a circuit board according to claim 1, wherein the circuit The substrate further includes a base layer in contact with the copper foil layer, and after removing the copper foil layer of the first etched region, exposing the base layer corresponding to the first etched region. 如申請專利範圍第1項所述之電路板製作方法,其中,通過塗佈液態光阻油墨之方法在銅箔層表面形成光阻層,再通過曝光與顯影工藝圖案化光阻層,以在銅箔層表面形成圖案化之光阻層。 The method for fabricating a circuit board according to claim 1, wherein a photoresist layer is formed on the surface of the copper foil layer by applying a liquid photoresist ink, and the photoresist layer is patterned by an exposure and development process to A patterned photoresist layer is formed on the surface of the copper foil layer. 如申請專利範圍第4項所述之電路板製作方法,其中,通過溶解去除圖案化之光阻層。 The method of fabricating a circuit board according to claim 4, wherein the patterned photoresist layer is removed by dissolution. 如申請專利範圍第1項所述之電路板製作方法,其中,所述第二線路具有與基底層接觸之第二底面、與第二底面相對之第二頂面,第二底面之寬度與第二頂面之寬度之差值小於或等於50微米。 The method of fabricating a circuit board according to claim 1, wherein the second line has a second bottom surface in contact with the base layer, a second top surface opposite to the second bottom surface, and a width of the second bottom surface The difference between the widths of the two top faces is less than or equal to 50 microns. 如申請專利範圍第1項所述之電路板製作方法,其中,每次蝕刻第一蝕刻區之銅箔層時,採用氯化銅蝕刻液進行蝕刻。 The method for fabricating a circuit board according to the first aspect of the invention, wherein the etching of the copper foil layer of the first etching region is performed by using a copper chloride etching solution. 如申請專利範圍第1項所述之電路板製作方法,其中,所述銅箔層之厚度為100微米至150微米時,通過兩次蝕刻工序去除第一蝕刻區之銅箔層。 The method for fabricating a circuit board according to the first aspect of the invention, wherein, when the thickness of the copper foil layer is from 100 micrometers to 150 micrometers, the copper foil layer of the first etching region is removed by two etching processes. 如申請專利範圍第1項所述之電路板製作方法,其中,所述銅箔層之厚度為150微米至220微米時,通過三次蝕刻工序去除第一蝕刻區之銅箔層。 The method for fabricating a circuit board according to claim 1, wherein the copper foil layer of the first etching region is removed by a third etching process when the thickness of the copper foil layer is from 150 micrometers to 220 micrometers. 如申請專利範圍第1項所述之電路板製作方法,其中,所述銅箔層之厚度為220微米至290微米時,通過四次蝕刻工序去除第一蝕刻區之銅箔層。 The method for fabricating a circuit board according to the first aspect of the invention, wherein, when the thickness of the copper foil layer is from 220 micrometers to 290 micrometers, the copper foil layer of the first etching region is removed by four etching processes.
TW99136852A 2010-10-28 2010-10-28 Method for manufacturing printed circuit board TWI420993B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI568326B (en) * 2014-09-15 2017-01-21 欣興電子股份有限公司 Method for fabricating conductive wiring

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* Cited by examiner, † Cited by third party
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TWI243007B (en) * 1999-02-05 2005-11-01 Ibm Inter-layer connection structure, multi-layer printed circuit board, and production processes therefor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI243007B (en) * 1999-02-05 2005-11-01 Ibm Inter-layer connection structure, multi-layer printed circuit board, and production processes therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI568326B (en) * 2014-09-15 2017-01-21 欣興電子股份有限公司 Method for fabricating conductive wiring

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