TWI571506B - 抑制微細構造體的圖案崩塌用之處理液及使用該處理液的微細構造體的製造方法 - Google Patents

抑制微細構造體的圖案崩塌用之處理液及使用該處理液的微細構造體的製造方法 Download PDF

Info

Publication number
TWI571506B
TWI571506B TW102110301A TW102110301A TWI571506B TW I571506 B TWI571506 B TW I571506B TW 102110301 A TW102110301 A TW 102110301A TW 102110301 A TW102110301 A TW 102110301A TW I571506 B TWI571506 B TW I571506B
Authority
TW
Taiwan
Prior art keywords
treatment liquid
microstructure
pattern collapse
pattern
acid
Prior art date
Application number
TW102110301A
Other languages
English (en)
Chinese (zh)
Other versions
TW201404872A (zh
Inventor
松永裕嗣
青山公洋
Original Assignee
三菱瓦斯化學股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三菱瓦斯化學股份有限公司 filed Critical 三菱瓦斯化學股份有限公司
Publication of TW201404872A publication Critical patent/TW201404872A/zh
Application granted granted Critical
Publication of TWI571506B publication Critical patent/TWI571506B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40—Additives
    • C09D7/60—Additives non-macromolecular
    • C09D7/63—Additives non-macromolecular organic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
TW102110301A 2012-03-27 2013-03-22 抑制微細構造體的圖案崩塌用之處理液及使用該處理液的微細構造體的製造方法 TWI571506B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012071080 2012-03-27
JP2013024629A JP6119285B2 (ja) 2012-03-27 2013-02-12 微細構造体のパターン倒壊抑制用処理液及びこれを用いた微細構造体の製造方法

Publications (2)

Publication Number Publication Date
TW201404872A TW201404872A (zh) 2014-02-01
TWI571506B true TWI571506B (zh) 2017-02-21

Family

ID=49154823

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102110301A TWI571506B (zh) 2012-03-27 2013-03-22 抑制微細構造體的圖案崩塌用之處理液及使用該處理液的微細構造體的製造方法

Country Status (5)

Country Link
US (1) US8956462B2 (enExample)
JP (1) JP6119285B2 (enExample)
KR (1) KR102002327B1 (enExample)
DE (1) DE102013004848B4 (enExample)
TW (1) TWI571506B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018063277A1 (en) * 2016-09-30 2018-04-05 Intel Corporation Integrated circuit devices with non-collapsed fins and methods of treating the fins to prevent fin collapse
US10954480B2 (en) * 2017-09-29 2021-03-23 Versum Materials Us, Llc Compositions and methods for preventing collapse of high aspect ratio structures during drying

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012027667A2 (en) * 2010-08-27 2012-03-01 Advanced Technology Materials, Inc. Method for preventing the collapse of high aspect ratio structures during drying

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4180716B2 (ja) 1998-12-28 2008-11-12 富士通株式会社 半導体装置の製造方法
JP4045180B2 (ja) 2002-12-03 2008-02-13 Ａｚエレクトロニックマテリアルズ株式会社 リソグラフィー用リンス液およびそれを用いたレジストパターン形成方法
JP4470144B2 (ja) 2003-03-19 2010-06-02 エルピーダメモリ株式会社 半導体集積回路装置の製造方法
JP4493393B2 (ja) 2004-04-23 2010-06-30 東京応化工業株式会社 リソグラフィー用リンス液
JP4353090B2 (ja) 2004-12-10 2009-10-28 三菱電機株式会社 レジスト用現像液
JP2007335892A (ja) 2007-08-17 2007-12-27 Toshiba Corp 半導体装置
JP4655083B2 (ja) 2007-11-16 2011-03-23 セイコーエプソン株式会社 微小電気機械装置
US7838425B2 (en) 2008-06-16 2010-11-23 Kabushiki Kaisha Toshiba Method of treating surface of semiconductor substrate
JP4743340B1 (ja) 2009-10-28 2011-08-10 セントラル硝子株式会社 保護膜形成用薬液
JP5630385B2 (ja) 2010-06-30 2014-11-26 セントラル硝子株式会社 保護膜形成用薬液及びウェハ表面の洗浄方法
JP2013102109A (ja) * 2011-01-12 2013-05-23 Central Glass Co Ltd 保護膜形成用薬液

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012027667A2 (en) * 2010-08-27 2012-03-01 Advanced Technology Materials, Inc. Method for preventing the collapse of high aspect ratio structures during drying

Also Published As

Publication number Publication date
KR102002327B1 (ko) 2019-07-22
DE102013004848B4 (de) 2020-03-26
JP2013229567A (ja) 2013-11-07
DE102013004848A1 (de) 2013-10-02
KR20130110086A (ko) 2013-10-08
JP6119285B2 (ja) 2017-04-26
TW201404872A (zh) 2014-02-01
US8956462B2 (en) 2015-02-17
US20130260571A1 (en) 2013-10-03

Similar Documents

Publication Publication Date Title
TWI597586B (zh) 由氧化矽構成之微細構造體之製造方法
CN102598220B (zh) 用于抑制金属微细结构体的图案倒塌的处理液和使用其的金属微细结构体的制造方法
TWI571506B (zh) 抑制微細構造體的圖案崩塌用之處理液及使用該處理液的微細構造體的製造方法
TWI597587B (zh) 使用抑制微細構造體的圖案崩塌用之處理液的微細構造體的製造方法
TWI585552B (zh) 由氧化矽構成之微細構造體之製造方法
CN102640264B (zh) 用于抑制金属微细结构体的图案倒塌的处理液和使用其的金属微细结构体的制造方法
JP6405610B2 (ja) 高アスペクト比を有する微細構造体のパターン倒壊抑制用処理液およびこれを用いた微細構造体の製造方法
JP5720572B2 (ja) 金属微細構造体のパターン倒壊抑制用処理液及びこれを用いた金属微細構造体の製造方法
JP2012238843A (ja) 撥水性保護膜形成用薬液
JP2015035458A (ja) 微細構造体のパターン倒壊抑制用処理液及びこれを用いた微細構造体の製造方法