TWI562232B - Pulsed plasma chamber in dual chamber configuration - Google Patents
Pulsed plasma chamber in dual chamber configurationInfo
- Publication number
- TWI562232B TWI562232B TW101132728A TW101132728A TWI562232B TW I562232 B TWI562232 B TW I562232B TW 101132728 A TW101132728 A TW 101132728A TW 101132728 A TW101132728 A TW 101132728A TW I562232 B TWI562232 B TW I562232B
- Authority
- TW
- Taiwan
- Prior art keywords
- chamber
- pulsed plasma
- configuration
- dual
- plasma chamber
- Prior art date
Links
- 230000009977 dual effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32825—Working under atmospheric pressure or higher
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/227,404 US20130059448A1 (en) | 2011-09-07 | 2011-09-07 | Pulsed Plasma Chamber in Dual Chamber Configuration |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201330098A TW201330098A (zh) | 2013-07-16 |
TWI562232B true TWI562232B (en) | 2016-12-11 |
Family
ID=47753486
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW105129203A TWI608544B (zh) | 2011-09-07 | 2012-09-07 | 處理晶圓的方法 |
TW101132728A TWI562232B (en) | 2011-09-07 | 2012-09-07 | Pulsed plasma chamber in dual chamber configuration |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW105129203A TWI608544B (zh) | 2011-09-07 | 2012-09-07 | 處理晶圓的方法 |
Country Status (7)
Country | Link |
---|---|
US (4) | US20130059448A1 (zh) |
JP (3) | JP6382719B2 (zh) |
KR (1) | KR101983866B1 (zh) |
CN (2) | CN103890916B (zh) |
SG (2) | SG10201602732TA (zh) |
TW (2) | TWI608544B (zh) |
WO (1) | WO2013036371A2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI756234B (zh) * | 2016-06-29 | 2022-03-01 | 美商應用材料股份有限公司 | 使用材料變性及rf脈衝的選擇性蝕刻 |
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CN103890916A (zh) | 2014-06-25 |
TW201330098A (zh) | 2013-07-16 |
CN106128931B (zh) | 2018-04-27 |
JP2019050413A (ja) | 2019-03-28 |
WO2013036371A3 (en) | 2014-05-15 |
JP6382719B2 (ja) | 2018-08-29 |
CN103890916B (zh) | 2016-09-07 |
TWI608544B (zh) | 2017-12-11 |
US20160148786A1 (en) | 2016-05-26 |
JP2014531753A (ja) | 2014-11-27 |
TW201701355A (zh) | 2017-01-01 |
JP6671446B2 (ja) | 2020-03-25 |
US20230317412A1 (en) | 2023-10-05 |
JP6441434B2 (ja) | 2018-12-19 |
WO2013036371A2 (en) | 2013-03-14 |
KR20140068055A (ko) | 2014-06-05 |
JP2018037668A (ja) | 2018-03-08 |
SG11201400364RA (en) | 2014-04-28 |
US20200227237A1 (en) | 2020-07-16 |
CN106128931A (zh) | 2016-11-16 |
US11670486B2 (en) | 2023-06-06 |
SG10201602732TA (en) | 2016-05-30 |
US20130059448A1 (en) | 2013-03-07 |
KR101983866B1 (ko) | 2019-09-03 |
US10553399B2 (en) | 2020-02-04 |
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