JP2023503578A - 複数のプラズマユニットを有する処理チャンバ - Google Patents
複数のプラズマユニットを有する処理チャンバ Download PDFInfo
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- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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Abstract
Description
Claims (20)
- 処理チャンバであって、
内部空間を画定するリッド及び側壁と、
前記内部空間の中のリモートプラズマユニットと、
前記内部空間の中のダイレクトプラズマユニットと、
少なくとも1つの電極と
を備え、前記リモートプラズマユニットがリモートプラズマを生成し、前記ダイレクトプラズマユニットがダイレクトプラズマを生成する、処理チャンバ。 - 前記リモートプラズマユニットと前記ダイレクトプラズマユニットとを分離するイオンフィルタを更に備える、請求項1に記載の処理チャンバ。
- 前記イオンフィルタが複数の開孔を備える、請求項2に記載の処理チャンバ。
- 前記イオンフィルタがシャワーヘッドである、請求項3に記載の処理チャンバ。
- ペデスタルを更に備える、請求項1に記載の処理チャンバ。
- 前記ペデスタルが前記少なくとも1つの電極を含む、請求項5に記載の処理チャンバ。
- 前記少なくとも1つの電極が、前記リモートプラズマユニットと電気通信可能に位置付けられている、請求項5に記載の処理チャンバ。
- 誘導結合されたプラズマ(ICP)コイルを更に備える、請求項1に記載の処理チャンバ。
- 前記ICPコイルが、前記リモートプラズマユニットと電気通信可能に位置付けられている、請求項8に記載の処理チャンバ。
- コントローラを更に備える、請求項1に記載の処理チャンバ。
- 前記コントローラが、中央処理装置(CPU)、メモリ、入出力(I/O)、及び支持回路のうちの一以上を備える、請求項10に記載の処理チャンバ。
- リモートプラズマに基板を露出すること、及び
ダイレクトプラズマに前記基板を露出すること
を含む、処理方法。 - 前記リモートプラズマに前記基板を露出し、前記ダイレクトプラズマに前記基板を露出することが、順次生じる、請求項12に記載の処理方法。
- 前記リモートプラズマに前記基板を露出し、前記ダイレクトプラズマに前記基板を露出することが、同時に生じる、請求項12に記載の処理方法。
- 前記リモートプラズマに前記基板を露出し、前記ダイレクトプラズマに前記基板を露出することが、前記基板を洗浄又は処理する、請求項12に記載の処理方法。
- 少なくとも1つの前駆体に前記基板を露出して、前記基板上に膜を形成することを更に含む、請求項12に記載の処理方法。
- 前記基板が、トレンチ、ビア、又はピークのうちの一以上を備える、請求項12に記載の処理方法。
- 前記基板が、その上に残留物又は自然酸化物のうちの一以上を含む、請求項17に記載の処理方法。
- 命令を含む非一時的コンピュータ可読媒体であって、処理チャンバのコントローラによって実行されると、前記処理チャンバに、
リモートプラズマに基板を露出すること、及び
ダイレクトプラズマに前記基板を露出すること
の動作を実行させる、非一時的コンピュータ可読媒体。 - 更に命令を含む非一時的コンピュータ可読媒体であって、処理チャンバのコントローラによって実行されると、前記処理チャンバに、
少なくとも1つの前駆体に前記基板を露出して、前記基板上に膜を形成すること
の動作を実行させる、請求項19に記載の非一時的コンピュータ可読媒体。
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US62/941,148 | 2019-11-27 | ||
US202062960293P | 2020-01-13 | 2020-01-13 | |
US62/960,293 | 2020-01-13 | ||
PCT/US2020/061759 WO2021108294A2 (en) | 2019-11-27 | 2020-11-23 | Processing chamber with multiple plasma units |
US17/101,074 | 2020-11-23 | ||
US17/101,074 US20210159052A1 (en) | 2019-11-27 | 2020-11-23 | Processing Chamber With Multiple Plasma Units |
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US (3) | US20210159052A1 (ja) |
JP (1) | JP2023503578A (ja) |
KR (1) | KR20220103781A (ja) |
TW (1) | TW202135125A (ja) |
WO (1) | WO2021108294A2 (ja) |
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WO2021108294A2 (en) | 2021-06-03 |
US20210159052A1 (en) | 2021-05-27 |
US20240249918A1 (en) | 2024-07-25 |
US20220319813A1 (en) | 2022-10-06 |
KR20220103781A (ko) | 2022-07-22 |
TW202135125A (zh) | 2021-09-16 |
WO2021108294A3 (en) | 2021-07-08 |
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