TWI561653B - Systems and methods for forming a layer of sputtered material - Google Patents

Systems and methods for forming a layer of sputtered material

Info

Publication number
TWI561653B
TWI561653B TW100127091A TW100127091A TWI561653B TW I561653 B TWI561653 B TW I561653B TW 100127091 A TW100127091 A TW 100127091A TW 100127091 A TW100127091 A TW 100127091A TW I561653 B TWI561653 B TW I561653B
Authority
TW
Taiwan
Prior art keywords
systems
methods
forming
layer
sputtered material
Prior art date
Application number
TW100127091A
Other languages
English (en)
Chinese (zh)
Other versions
TW201213578A (en
Inventor
Marcus Bender
Markus Hanika
Evelyn Scheer
Fabio Pieralisi
Guido Mahnke
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW201213578A publication Critical patent/TW201213578A/zh
Application granted granted Critical
Publication of TWI561653B publication Critical patent/TWI561653B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3473—Composition uniformity or desired gradient

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
TW100127091A 2010-09-30 2011-07-29 Systems and methods for forming a layer of sputtered material TWI561653B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP10184028A EP2437280A1 (en) 2010-09-30 2010-09-30 Systems and methods for forming a layer of sputtered material

Publications (2)

Publication Number Publication Date
TW201213578A TW201213578A (en) 2012-04-01
TWI561653B true TWI561653B (en) 2016-12-11

Family

ID=43221918

Family Applications (2)

Application Number Title Priority Date Filing Date
TW100127091A TWI561653B (en) 2010-09-30 2011-07-29 Systems and methods for forming a layer of sputtered material
TW104107768A TWI565818B (zh) 2010-09-30 2011-07-29 形成濺射材料層的系統與方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW104107768A TWI565818B (zh) 2010-09-30 2011-07-29 形成濺射材料層的系統與方法

Country Status (7)

Country Link
US (2) US20120080309A1 (OSRAM)
EP (2) EP2437280A1 (OSRAM)
JP (2) JP5907971B2 (OSRAM)
KR (6) KR20130100325A (OSRAM)
CN (2) CN104658847A (OSRAM)
TW (2) TWI561653B (OSRAM)
WO (1) WO2012041557A1 (OSRAM)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120044050A (ko) * 2010-10-27 2012-05-07 주식회사 에이스테크놀로지 Ｒｆ 장비 도금 방법 및 이에 사용되는 스퍼터링 장치
CN103132032A (zh) * 2013-03-15 2013-06-05 上海和辉光电有限公司 一种用于减少ito溅射损伤衬底的溅射设备及其方法
CN103681975B (zh) * 2013-12-27 2017-01-25 柳州百韧特先进材料有限公司 一种制备cigs太阳能电池的方法
US9988707B2 (en) 2014-05-30 2018-06-05 Ppg Industries Ohio, Inc. Transparent conducting indium doped tin oxide
WO2016005476A1 (en) 2014-07-09 2016-01-14 Soleras Advanced Coatings Bvba Sputter device with moving target
JP6044602B2 (ja) * 2014-07-11 2016-12-14 トヨタ自動車株式会社 成膜装置
CN105463386B (zh) * 2014-09-30 2018-10-12 芝浦机械电子装置株式会社 成膜装置及成膜基板制造方法
JP6411975B2 (ja) * 2014-09-30 2018-10-24 芝浦メカトロニクス株式会社 成膜装置及び成膜基板製造方法
WO2016095976A1 (en) * 2014-12-16 2016-06-23 Applied Materials, Inc. Apparatus and method for coating a substrate with a movable sputter assembly and control over power parameters
KR101701356B1 (ko) * 2015-03-18 2017-02-01 (주)에스엔텍 기재의 측면 증착이 용이한 스퍼터링 장치 및 스퍼터링 방법
KR102480756B1 (ko) * 2015-10-14 2022-12-23 삼성디스플레이 주식회사 스퍼터링 장치
KR102446178B1 (ko) * 2015-12-09 2022-09-22 삼성디스플레이 주식회사 스퍼터링 장치
CN105773462B (zh) * 2016-01-07 2019-03-29 北京师范大学 一种基于离子束技术提高抛光光学玻璃的金刚石砂轮棒寿命的方法及设备
KR101678893B1 (ko) * 2016-02-01 2016-11-23 (주)에스엔텍 원통형 스퍼터링 캐소드 장치 및 이를 이용한 박막 증착 방법
JP6380483B2 (ja) 2016-08-10 2018-08-29 トヨタ自動車株式会社 成膜装置
KR102651759B1 (ko) * 2016-10-11 2024-03-29 삼성디스플레이 주식회사 증착장치
KR20190077575A (ko) * 2016-11-22 2019-07-03 어플라이드 머티어리얼스, 인코포레이티드 기판 상으로의 층 증착을 위한 장치 및 방법
BE1024754B9 (nl) * 2016-11-29 2018-07-24 Soleras Advanced Coatings Bvba Een universeel monteerbaar eindblok
JP7061257B2 (ja) * 2017-03-17 2022-04-28 日新電機株式会社 スパッタリング装置
CN110785512A (zh) * 2017-06-26 2020-02-11 应用材料公司 可移动掩蔽元件
DE102018115516A1 (de) * 2017-06-28 2019-01-03 Solayer Gmbh Sputtervorrichtung und Sputterverfahren zur Beschichtung von dreidimensional geformten Substratoberflächen
DE102017116044A1 (de) * 2017-07-17 2019-01-17 RF360 Europe GmbH Sputtervorrichtung und Verfahren zur Verwendung
JP7202814B2 (ja) 2018-08-31 2023-01-12 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
JP7202815B2 (ja) 2018-08-31 2023-01-12 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
JP7229015B2 (ja) * 2018-12-27 2023-02-27 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
JP7242293B2 (ja) 2018-12-27 2023-03-20 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
JP7229014B2 (ja) 2018-12-27 2023-02-27 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
JP7229016B2 (ja) 2018-12-27 2023-02-27 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
JP7220562B2 (ja) 2018-12-27 2023-02-10 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
CN113493902A (zh) * 2020-03-19 2021-10-12 中微半导体设备(上海)股份有限公司 磁控溅射镀膜装置及其工作方法
CN114075650A (zh) * 2020-08-18 2022-02-22 群创光电股份有限公司 曲面基板的镀膜装置及其镀膜方法
WO2022078592A1 (en) * 2020-10-14 2022-04-21 Applied Materials, Inc. Sputter deposition source, deposition apparatus and method of coating a substrate
JP7614143B2 (ja) 2022-08-03 2025-01-15 株式会社アルバック 成膜装置及び成膜方法
CN115896721B (zh) * 2022-11-11 2025-07-25 华中科技大学 一种用于调控高熵合金元素比例的磁控溅射方法及系统

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004346387A (ja) * 2003-05-23 2004-12-09 Ulvac Japan Ltd スパッタ源、スパッタリング装置、及びスパッタリング方法
WO2008108185A1 (ja) * 2007-03-01 2008-09-12 Ulvac, Inc. 薄膜形成方法及び薄膜形成装置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4478702A (en) * 1984-01-17 1984-10-23 Ppg Industries, Inc. Anode for magnetic sputtering apparatus
JPS6270568A (ja) * 1985-09-25 1987-04-01 Hitachi Ltd スパツタ方法
JPS63162862A (ja) * 1986-12-26 1988-07-06 Hitachi Ltd スパツタ装置
JPH0681145A (ja) * 1992-08-31 1994-03-22 Shimadzu Corp マグネトロンスパッタ装置
US5338422A (en) * 1992-09-29 1994-08-16 The Boc Group, Inc. Device and method for depositing metal oxide films
US5616225A (en) * 1994-03-23 1997-04-01 The Boc Group, Inc. Use of multiple anodes in a magnetron for improving the uniformity of its plasma
US6416635B1 (en) * 1995-07-24 2002-07-09 Tokyo Electron Limited Method and apparatus for sputter coating with variable target to substrate spacing
JP2001172764A (ja) * 1999-12-13 2001-06-26 Matsushita Electric Ind Co Ltd スパッタリング方法及びスパッタリング装置
JP2001234336A (ja) * 2000-02-18 2001-08-31 Ulvac Japan Ltd スパッタリング方法及びスパッタリング装置
JP2003183823A (ja) * 2001-12-17 2003-07-03 Sharp Corp スパッタ装置
JP4437290B2 (ja) * 2003-05-14 2010-03-24 シーワイジー技術研究所株式会社 スパッタ装置
JP4246547B2 (ja) * 2003-05-23 2009-04-02 株式会社アルバック スパッタリング装置、及びスパッタリング方法
US9771648B2 (en) * 2004-08-13 2017-09-26 Zond, Inc. Method of ionized physical vapor deposition sputter coating high aspect-ratio structures
DE502004010804D1 (de) * 2004-05-05 2010-04-08 Applied Materials Gmbh & Co Kg Beschichtungsvorrichtung mit grossflächiger Anordnung von drehbaren Magnetronkathoden
JP4721878B2 (ja) * 2005-11-22 2011-07-13 キヤノンアネルバ株式会社 スパッタリング装置
KR101213888B1 (ko) * 2006-05-08 2012-12-18 엘지디스플레이 주식회사 스퍼터링 장치, 그 구동 방법 및 이를 이용한 패널 제조방법
DE102006036403B4 (de) * 2006-08-02 2009-11-19 Von Ardenne Anlagentechnik Gmbh Verfahren zur Beschichtung eines Substrats mit einer definierten Schichtdickenverteilung
CN101528972B (zh) * 2006-10-24 2013-06-19 株式会社爱发科 薄膜形成方法及薄膜形成装置
KR20090079175A (ko) * 2008-01-16 2009-07-21 어플라이드 머티어리얼스, 인코포레이티드 스퍼터 코팅 장치
EP2090673A1 (en) * 2008-01-16 2009-08-19 Applied Materials, Inc. Sputter coating device
US20090178919A1 (en) * 2008-01-16 2009-07-16 Applied Materials, Inc. Sputter coating device
CN101285169B (zh) * 2008-05-16 2010-12-22 昆明理工大学 高真空离子束溅镀靶材利用率增强装置
WO2010090197A1 (ja) * 2009-02-04 2010-08-12 シャープ株式会社 透明導電膜形成体及びその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004346387A (ja) * 2003-05-23 2004-12-09 Ulvac Japan Ltd スパッタ源、スパッタリング装置、及びスパッタリング方法
WO2008108185A1 (ja) * 2007-03-01 2008-09-12 Ulvac, Inc. 薄膜形成方法及び薄膜形成装置

Also Published As

Publication number Publication date
KR20200018739A (ko) 2020-02-19
EP2622627B1 (en) 2018-09-05
KR20150030769A (ko) 2015-03-20
US20120080309A1 (en) 2012-04-05
EP2622627A1 (en) 2013-08-07
CN104658847A (zh) 2015-05-27
KR20200127061A (ko) 2020-11-09
KR20180102229A (ko) 2018-09-14
TW201525170A (zh) 2015-07-01
JP2013544958A (ja) 2013-12-19
WO2012041557A1 (en) 2012-04-05
KR20130100325A (ko) 2013-09-10
US20130284590A1 (en) 2013-10-31
CN102934197A (zh) 2013-02-13
EP2437280A1 (en) 2012-04-04
CN102934197B (zh) 2016-05-04
JP5907971B2 (ja) 2016-04-26
JP6258883B2 (ja) 2018-01-10
KR20180112124A (ko) 2018-10-11
TWI565818B (zh) 2017-01-11
JP2015172240A (ja) 2015-10-01
TW201213578A (en) 2012-04-01

Similar Documents

Publication Publication Date Title
TWI561653B (en) Systems and methods for forming a layer of sputtered material
EP2523572A4 (en) Intermediate layer of friction decreasing material
EG26585A (en) His way to install the film and the resulting product
PL2707150T3 (pl) Sposób wytwarzania warstwy sproszkowanej lub warstwy granulowanej
EP2750876A4 (en) MULTILAYER MATERIAL AND CONTAINER AND MANUFACTURING METHOD THEREFOR
PL2483214T3 (pl) Sposób osadzania cienkiej warstwy i produkt zawierający cienką warstwę
GB201118180D0 (en) Method of identifying a material
ZA201302165B (en) Method and system for tracking material
IL231042B (en) The purpose of the thesis and method for its production
SG184344A1 (en) A barrier layer, a process of making a barrier layer and uses thereof
SG11201404314WA (en) Magnetic material sputtering target and manufacturing method for same
SG11201403654XA (en) Cost-effective single crystal multi-stake actuator and method of manufacture
EP2552690A4 (en) TEXTURED FILM AND MANUFACTURING METHOD THEREFOR
PT2763827E (pt) Dispositivo e método para processamento de uma camada do material em pó
EP2569145A4 (en) A composite article comprising particles and a method of forming a composite article
ZA201303537B (en) Method for forming ground - covering layer and the ground -covering layer
EP2628187A4 (en) Method and substrates for material application
GB2473232B (en) Method of depositing material
EP2628815A4 (en) Method for producing metal material and metal material
SG10201509233SA (en) Actuator and method of manufacture thereof
GB2491152B (en) Methods and apparatuses for depositing a layer of coating material on a component
GB201009067D0 (en) Methods and apparatuses for depositing a layer of coating material on a component
AU2010903725A0 (en) A method of forming a structure from a material
GB201008904D0 (en) A construction material and method of manufacturing such a material
GB201100161D0 (en) A night use target of clay or other material