TWI560767B - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method

Info

Publication number
TWI560767B
TWI560767B TW100145563A TW100145563A TWI560767B TW I560767 B TWI560767 B TW I560767B TW 100145563 A TW100145563 A TW 100145563A TW 100145563 A TW100145563 A TW 100145563A TW I560767 B TWI560767 B TW I560767B
Authority
TW
Taiwan
Prior art keywords
substrate processing
processing apparatus
processing method
substrate
processing
Prior art date
Application number
TW100145563A
Other languages
English (en)
Other versions
TW201246357A (en
Inventor
Eiichiro Kikuchi
Nobuyuki Nagayama
Takahiro Miyai
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201246357A publication Critical patent/TW201246357A/zh
Application granted granted Critical
Publication of TWI560767B publication Critical patent/TWI560767B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
TW100145563A 2010-12-22 2011-12-09 Substrate processing apparatus and substrate processing method TWI560767B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010286075A JP5642531B2 (ja) 2010-12-22 2010-12-22 基板処理装置及び基板処理方法

Publications (2)

Publication Number Publication Date
TW201246357A TW201246357A (en) 2012-11-16
TWI560767B true TWI560767B (en) 2016-12-01

Family

ID=46315420

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100145563A TWI560767B (en) 2010-12-22 2011-12-09 Substrate processing apparatus and substrate processing method

Country Status (5)

Country Link
US (2) US20120160808A1 (zh)
JP (1) JP5642531B2 (zh)
KR (1) KR101995449B1 (zh)
CN (2) CN104821268B (zh)
TW (1) TWI560767B (zh)

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TWI699140B (zh) * 2017-06-27 2020-07-11 日商佳能安內華股份有限公司 電漿處理裝置
US11569070B2 (en) 2017-06-27 2023-01-31 Canon Anelva Corporation Plasma processing apparatus
US11600469B2 (en) 2017-06-27 2023-03-07 Canon Anelva Corporation Plasma processing apparatus
US11600466B2 (en) 2018-06-26 2023-03-07 Canon Anelva Corporation Plasma processing apparatus, plasma processing method, and memory medium
US11626270B2 (en) 2017-06-27 2023-04-11 Canon Anelva Corporation Plasma processing apparatus

Families Citing this family (50)

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JP5503503B2 (ja) * 2010-11-09 2014-05-28 東京エレクトロン株式会社 プラズマ処理装置
DE102012101923B4 (de) * 2012-03-07 2019-11-07 Osram Opto Semiconductors Gmbh Substratträgeranordnung, Beschichtungsanlage mit Substratträgeranordnung und Verfahren zur Durchführung eines Beschichtungsverfahrens
JP6001402B2 (ja) * 2012-09-28 2016-10-05 日本特殊陶業株式会社 静電チャック
JP6080571B2 (ja) * 2013-01-31 2017-02-15 東京エレクトロン株式会社 載置台及びプラズマ処理装置
KR102112368B1 (ko) * 2013-02-28 2020-05-18 도쿄엘렉트론가부시키가이샤 탑재대 및 플라즈마 처리 장치
KR101317942B1 (ko) * 2013-03-13 2013-10-16 (주)테키스트 반도체 제조용 척의 에지링 냉각모듈
JP6226117B2 (ja) * 2013-07-25 2017-11-08 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及びプラズマ処理方法
JP6689020B2 (ja) * 2013-08-21 2020-04-28 東京エレクトロン株式会社 プラズマ処理装置
JP2015069770A (ja) * 2013-09-27 2015-04-13 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5938716B2 (ja) * 2013-11-01 2016-06-22 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及びプラズマ処理方法
JP6224428B2 (ja) 2013-11-19 2017-11-01 東京エレクトロン株式会社 載置台にフォーカスリングを吸着する方法
US20150162169A1 (en) * 2013-12-05 2015-06-11 Taiwan Semiconductor Manufacturing Co., Ltd. Etching apparatus and method
US9368370B2 (en) * 2014-03-14 2016-06-14 Applied Materials, Inc. Temperature ramping using gas distribution plate heat
US9415519B2 (en) * 2014-07-01 2016-08-16 Varian Semiconductor Equipment Associates, Inc. Composite end effector and method of making a composite end effector
JP6345030B2 (ja) * 2014-08-11 2018-06-20 東京エレクトロン株式会社 プラズマ処理装置及びフォーカスリング
CN105489527B (zh) * 2014-09-19 2018-11-06 北京北方华创微电子装备有限公司 承载装置以及半导体加工设备
KR102233920B1 (ko) 2014-09-30 2021-03-30 스미토모 오사카 세멘토 가부시키가이샤 정전 척 장치
JP6424700B2 (ja) * 2015-03-26 2018-11-21 住友大阪セメント株式会社 静電チャック装置
US9903739B2 (en) * 2015-06-11 2018-02-27 Tokyo Electron Limited Sensor chip for electrostatic capacitance measurement and measuring device having the same
JP6512954B2 (ja) * 2015-06-11 2019-05-15 東京エレクトロン株式会社 フォーカスリングを検査するためのシステム、及びフォーカスリングを検査する方法
JP6449141B2 (ja) * 2015-06-23 2019-01-09 東京エレクトロン株式会社 エッチング処理方法及びプラズマ処理装置
JP6552346B2 (ja) * 2015-09-04 2019-07-31 東京エレクトロン株式会社 基板処理装置
KR102634280B1 (ko) * 2015-10-21 2024-02-07 스미토모 오사카 세멘토 가부시키가이샤 정전 척 장치
JP2017152437A (ja) * 2016-02-22 2017-08-31 東芝メモリ株式会社 プラズマ処理装置および半導体装置の製造方法
US10600621B2 (en) * 2016-03-30 2020-03-24 Tokyo Electron Limited Plasma electrode and plasma processing device
US9922857B1 (en) 2016-11-03 2018-03-20 Lam Research Corporation Electrostatically clamped edge ring
DE102017105947A1 (de) * 2017-03-20 2018-09-20 Aixtron Se Suszeptor für einen CVD-Reaktor
JP6427628B2 (ja) * 2017-06-05 2018-11-21 芝浦メカトロニクス株式会社 プラズマ処理装置、およびプラズマ処理方法
JP7045635B2 (ja) * 2017-08-30 2022-04-01 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及び方法
CN111108589B (zh) 2017-09-29 2023-10-20 住友大阪水泥股份有限公司 静电卡盘装置
CN111226309B (zh) * 2017-11-06 2023-09-19 日本碍子株式会社 静电卡盘组件、静电卡盘及聚焦环
US10950483B2 (en) * 2017-11-28 2021-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for fixed focus ring processing
CN111684574B (zh) 2018-02-20 2023-09-05 住友大阪水泥股份有限公司 静电卡盘装置及静电卡盘装置的制造方法
JP7204350B2 (ja) * 2018-06-12 2023-01-16 東京エレクトロン株式会社 載置台、基板処理装置及びエッジリング
JP7001165B2 (ja) 2018-08-02 2022-01-19 住友大阪セメント株式会社 静電チャック装置および静電チャック装置の製造方法
US11315759B2 (en) 2019-02-08 2022-04-26 Hitachi High-Tech Corporation Plasma processing apparatus
JP2020140983A (ja) * 2019-02-26 2020-09-03 キオクシア株式会社 半導体製造装置
US11894255B2 (en) * 2019-07-30 2024-02-06 Applied Materials, Inc. Sheath and temperature control of process kit
JP7412923B2 (ja) 2019-08-23 2024-01-15 東京エレクトロン株式会社 エッジリング、プラズマ処理装置及びエッジリングの製造方法
KR102335472B1 (ko) * 2019-09-04 2021-12-07 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
CN113994462A (zh) 2019-09-06 2022-01-28 Toto株式会社 静电吸盘
JP7341043B2 (ja) * 2019-12-06 2023-09-08 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP7390219B2 (ja) * 2020-03-11 2023-12-01 東京エレクトロン株式会社 エッジリングの保持方法、プラズマ処理装置、及び基板処理システム
CN115362543A (zh) * 2020-04-02 2022-11-18 朗姆研究公司 具有整合式密封件的冷却边缘环
CN111524783A (zh) * 2020-04-10 2020-08-11 华虹半导体(无锡)有限公司 等离子体处理装置
US20230215704A1 (en) 2020-06-29 2023-07-06 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck device
US20230290620A1 (en) 2020-06-29 2023-09-14 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck
TW202226897A (zh) * 2020-11-06 2022-07-01 日商東京威力科創股份有限公司 濾波器電路
KR20220102201A (ko) * 2021-01-12 2022-07-20 삼성전자주식회사 척 어셈블리, 그를 포함하는 반도체 소자의 제조 장치, 및 반도체 소자의 제조방법
JP2022111771A (ja) * 2021-01-20 2022-08-01 東京エレクトロン株式会社 プラズマ処理システム及びプラズマ処理方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000036490A (ja) * 1998-07-16 2000-02-02 Tokyo Electron Yamanashi Ltd プラズマ処理装置およびその方法
JP2005064460A (ja) * 2003-04-24 2005-03-10 Tokyo Electron Ltd プラズマ処理装置、フォーカスリング及び被処理体の載置装置
JP2005520337A (ja) * 2002-03-12 2005-07-07 東京エレクトロン株式会社 プラズマ処理のための改良された基板ホルダ
JP2006319043A (ja) * 2005-05-11 2006-11-24 Hitachi High-Technologies Corp プラズマ処理装置
US20100018648A1 (en) * 2008-07-23 2010-01-28 Applied Marterials, Inc. Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07249586A (ja) * 1993-12-22 1995-09-26 Tokyo Electron Ltd 処理装置及びその製造方法並びに被処理体の処理方法
JPH10303288A (ja) * 1997-04-26 1998-11-13 Anelva Corp プラズマ処理装置用基板ホルダー
US6806211B2 (en) * 2000-08-11 2004-10-19 Tokyo Electron Limited Device and method for processing substrate
TW541586B (en) * 2001-05-25 2003-07-11 Tokyo Electron Ltd Substrate table, production method therefor and plasma treating device
US20040261946A1 (en) * 2003-04-24 2004-12-30 Tokyo Electron Limited Plasma processing apparatus, focus ring, and susceptor
US7713431B2 (en) * 2004-06-10 2010-05-11 Tokyo Electron Limited Plasma processing method
JP4645167B2 (ja) * 2004-11-15 2011-03-09 東京エレクトロン株式会社 フォーカスリング、プラズマエッチング装置及びプラズマエッチング方法。
JP4815298B2 (ja) * 2006-07-31 2011-11-16 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP4992389B2 (ja) * 2006-11-06 2012-08-08 東京エレクトロン株式会社 載置装置、プラズマ処理装置及びプラズマ処理方法
JP5198226B2 (ja) * 2008-11-20 2013-05-15 東京エレクトロン株式会社 基板載置台および基板処理装置
JP2012049166A (ja) * 2010-08-24 2012-03-08 Hitachi High-Technologies Corp 真空処理装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000036490A (ja) * 1998-07-16 2000-02-02 Tokyo Electron Yamanashi Ltd プラズマ処理装置およびその方法
JP2005520337A (ja) * 2002-03-12 2005-07-07 東京エレクトロン株式会社 プラズマ処理のための改良された基板ホルダ
JP2005064460A (ja) * 2003-04-24 2005-03-10 Tokyo Electron Ltd プラズマ処理装置、フォーカスリング及び被処理体の載置装置
JP2006319043A (ja) * 2005-05-11 2006-11-24 Hitachi High-Technologies Corp プラズマ処理装置
US20100018648A1 (en) * 2008-07-23 2010-01-28 Applied Marterials, Inc. Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI699140B (zh) * 2017-06-27 2020-07-11 日商佳能安內華股份有限公司 電漿處理裝置
US11569070B2 (en) 2017-06-27 2023-01-31 Canon Anelva Corporation Plasma processing apparatus
US11600469B2 (en) 2017-06-27 2023-03-07 Canon Anelva Corporation Plasma processing apparatus
US11626270B2 (en) 2017-06-27 2023-04-11 Canon Anelva Corporation Plasma processing apparatus
US11756773B2 (en) 2017-06-27 2023-09-12 Canon Anelva Corporation Plasma processing apparatus
US11784030B2 (en) 2017-06-27 2023-10-10 Canon Anelva Corporation Plasma processing apparatus
US11961710B2 (en) 2017-06-27 2024-04-16 Canon Anelva Corporation Plasma processing apparatus
US11600466B2 (en) 2018-06-26 2023-03-07 Canon Anelva Corporation Plasma processing apparatus, plasma processing method, and memory medium

Also Published As

Publication number Publication date
JP2012134375A (ja) 2012-07-12
US20120160808A1 (en) 2012-06-28
US20150200080A1 (en) 2015-07-16
CN102569130B (zh) 2014-12-31
CN102569130A (zh) 2012-07-11
JP5642531B2 (ja) 2014-12-17
KR20120071362A (ko) 2012-07-02
CN104821268A (zh) 2015-08-05
TW201246357A (en) 2012-11-16
CN104821268B (zh) 2017-01-11
KR101995449B1 (ko) 2019-07-02

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