JP2017152437A - プラズマ処理装置および半導体装置の製造方法 - Google Patents
プラズマ処理装置および半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 239000002826 coolant Substances 0.000 claims description 25
- 238000001816 cooling Methods 0.000 claims 2
- 238000000034 method Methods 0.000 abstract description 16
- 239000007789 gas Substances 0.000 description 71
- 239000010410 layer Substances 0.000 description 65
- 239000011229 interlayer Substances 0.000 description 28
- 238000003860 storage Methods 0.000 description 11
- 230000004888 barrier function Effects 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 238000001020 plasma etching Methods 0.000 description 10
- 239000011261 inert gas Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 229910052734 helium Inorganic materials 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- -1 for example Substances 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
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Abstract
Description
図1は、第1実施形態のプラズマ処理装置の構造を示す断面図である。図1のプラズマ処理装置は、例えばプラズマエッチング装置である。
図4は、第2実施形態のプラズマ処理装置の構造を示す断面図である。
図5は、第3実施形態の半導体装置の構造を示す断面図である。図5の半導体装置は、3次元構造のフラッシュメモリを備えており、第1または第2実施形態のウェハ1から製造される。図5は、フラッシュメモリ内の2個のメモリ素子MEを示している。
2:ダミーリング、2a:第2流路、
11:処理チャンバ、12:ESC、12a:第1流路、
12b:第2流路、13:上部電極、14:交流電源、
15:プロセスガス供給部、16:冷却材供給部、17:MFC、
18:ダミーリング保持部、18a:第2流路、19:制御部、
21:HV電極、22:絶縁膜、23:ESC基台、
24:HV電源、25:ESC電源、
31:半導体基板、32:層間絶縁膜、33:第1のメモリ絶縁膜、
34:半導体層、35:第2のメモリ絶縁膜、36:電荷蓄積層、
37:第3のメモリ絶縁膜、38:配線、38a:バリアメタル層、
38b:配線材層、39:絶縁膜、40:層間絶縁膜、41:犠牲膜
Claims (6)
- 基板を保持する静電チャックと、
前記基板の端部を包囲する包囲部材を保持する包囲部材保持部と、
前記基板を処理するプラズマを前記基板の第1面側に供給するプラズマ供給部と、
前記静電チャックの側面に設けられたガス穴または前記包囲部材に設けられたガス穴から前記基板の第2面側にガスを放出して、前記基板の端部と前記包囲部材との間の空間に前記ガスを供給するガス供給部と、
を備えるプラズマ処理装置。 - さらに、前記ガス穴から放出される前記ガスの流量を制御する流量制御部を備える、請求項1に記載のプラズマ処理装置。
- 前記ガス供給部は、前記基板を冷却する冷却材を前記基板に供給する冷却材供給部を備え、前記ガスとして前記冷却材を前記ガス穴から放出し、
前記静電チャックは、前記基板に前記冷却材を供給する第1流路と、前記ガスとして前記冷却材を前記ガス穴から放出する第2流路とを備える、請求項1または2に記載のプラズマ処理装置。 - 前記静電チャックは、前記ガス穴として複数の穴を備え、前記第2流路として前記複数の穴に接続された複数の流路を有する、請求項3に記載のプラズマ処理装置。
- 前記ガス供給部は、前記基板を冷却する冷却材を前記基板に供給する冷却材供給部を備え、前記ガスとして前記冷却材を前記ガス穴から放出し、
前記静電チャックは、前記基板に前記冷却材を供給する第1流路を備え、
前記包囲部材は、前記ガスとして前記冷却材を前記ガス穴から放出する第2流路を備える、請求項1または2に記載のプラズマ処理装置。 - 基板を静電チャックにより保持し、
前記基板の端部を包囲部材により包囲し、
前記基板を処理するプラズマを前記基板の第1面側に供給し、
前記静電チャックの側面に設けられたガス穴または前記包囲部材に設けられたガス穴から前記基板の第2面側にガスを放出して、前記基板の端部と前記包囲部材との間の空間に前記ガスを供給する、
ことを含む半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2016031242A JP2017152437A (ja) | 2016-02-22 | 2016-02-22 | プラズマ処理装置および半導体装置の製造方法 |
US15/248,719 US20170243777A1 (en) | 2016-02-22 | 2016-08-26 | Plasma processing apparatus and method of manufacturing semiconductor device |
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JP2016031242A JP2017152437A (ja) | 2016-02-22 | 2016-02-22 | プラズマ処理装置および半導体装置の製造方法 |
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JP2017152437A true JP2017152437A (ja) | 2017-08-31 |
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JP (1) | JP2017152437A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110581051A (zh) * | 2018-06-07 | 2019-12-17 | 细美事有限公司 | 用于处理基板的装置和方法 |
US11164726B2 (en) | 2019-02-08 | 2021-11-02 | Toshiba Memory Corporation | Gas supply member, plasma processing apparatus, and method for forming coating film |
US11664253B2 (en) | 2019-03-18 | 2023-05-30 | Kioxia Corporation | Semiconductor manufacturing apparatus and method of manufacturing semiconductor device |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US11521884B2 (en) * | 2018-06-29 | 2022-12-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electrostatic chuck sidewall gas curtain |
JP2021027152A (ja) * | 2019-08-05 | 2021-02-22 | キオクシア株式会社 | プラズマ処理装置およびプラズマ処理方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US6730175B2 (en) * | 2002-01-22 | 2004-05-04 | Applied Materials, Inc. | Ceramic substrate support |
JP2006319043A (ja) * | 2005-05-11 | 2006-11-24 | Hitachi High-Technologies Corp | プラズマ処理装置 |
JP5642531B2 (ja) * | 2010-12-22 | 2014-12-17 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
US20150162169A1 (en) * | 2013-12-05 | 2015-06-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Etching apparatus and method |
-
2016
- 2016-02-22 JP JP2016031242A patent/JP2017152437A/ja not_active Abandoned
- 2016-08-26 US US15/248,719 patent/US20170243777A1/en not_active Abandoned
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110581051A (zh) * | 2018-06-07 | 2019-12-17 | 细美事有限公司 | 用于处理基板的装置和方法 |
KR20190139061A (ko) * | 2018-06-07 | 2019-12-17 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
KR102223759B1 (ko) | 2018-06-07 | 2021-03-05 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
CN110581051B (zh) * | 2018-06-07 | 2022-06-17 | 细美事有限公司 | 用于处理基板的装置和方法 |
US11164726B2 (en) | 2019-02-08 | 2021-11-02 | Toshiba Memory Corporation | Gas supply member, plasma processing apparatus, and method for forming coating film |
US11664253B2 (en) | 2019-03-18 | 2023-05-30 | Kioxia Corporation | Semiconductor manufacturing apparatus and method of manufacturing semiconductor device |
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