TWI558275B - 電漿產生裝置、蒸氣沈積裝置及電漿產生方法 - Google Patents

電漿產生裝置、蒸氣沈積裝置及電漿產生方法 Download PDF

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Publication number
TWI558275B
TWI558275B TW102111671A TW102111671A TWI558275B TW I558275 B TWI558275 B TW I558275B TW 102111671 A TW102111671 A TW 102111671A TW 102111671 A TW102111671 A TW 102111671A TW I558275 B TWI558275 B TW I558275B
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TW
Taiwan
Prior art keywords
plasma
guns
cathode
electrode
vapor deposition
Prior art date
Application number
TW102111671A
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English (en)
Chinese (zh)
Other versions
TW201349945A (zh
Inventor
古屋英二
Original Assignee
中外爐工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Publication of TW201349945A publication Critical patent/TW201349945A/zh
Application granted granted Critical
Publication of TWI558275B publication Critical patent/TWI558275B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3458—Electromagnets in particular for cathodic sputtering apparatus
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
TW102111671A 2012-04-12 2013-04-01 電漿產生裝置、蒸氣沈積裝置及電漿產生方法 TWI558275B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012090921A JP5700695B2 (ja) 2012-04-12 2012-04-12 プラズマ発生装置および蒸着装置並びにプラズマ発生方法

Publications (2)

Publication Number Publication Date
TW201349945A TW201349945A (zh) 2013-12-01
TWI558275B true TWI558275B (zh) 2016-11-11

Family

ID=49327444

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102111671A TWI558275B (zh) 2012-04-12 2013-04-01 電漿產生裝置、蒸氣沈積裝置及電漿產生方法

Country Status (7)

Country Link
US (1) US9824867B2 (enExample)
EP (1) EP2838323B1 (enExample)
JP (1) JP5700695B2 (enExample)
KR (1) KR101953946B1 (enExample)
CN (1) CN104221477B (enExample)
TW (1) TWI558275B (enExample)
WO (1) WO2013153865A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180066575A (ko) * 2016-12-09 2018-06-19 (주)트리플코어스코리아 아크 방전을 이용하는 플라즈마 토치용 양극 구조물 및 이를 구비하는 플라즈마 토치
CN117244174B (zh) * 2023-10-09 2024-07-19 深圳市国商联健康管理有限公司 用于智能清除癌细胞的等离子发生装置及其操作办法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02225660A (ja) * 1988-06-23 1990-09-07 Kawasaki Steel Corp イオンプレーティング用蒸発装置
JPH073442A (ja) * 1993-06-16 1995-01-06 Asahi Glass Co Ltd 蒸着装置
JPH07258833A (ja) * 1994-03-25 1995-10-09 Nippon Sheet Glass Co Ltd アーク放電プラズマによる被膜の形成方法
US6103074A (en) * 1998-02-14 2000-08-15 Phygen, Inc. Cathode arc vapor deposition method and apparatus
TW432903B (en) * 1998-05-29 2001-05-01 Leybold Systems Gmbh Device for generating plasma
CN202072760U (zh) * 2011-04-26 2011-12-14 中国科学院金属研究所 一种电弧离子镀设备

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4863581A (en) * 1987-02-12 1989-09-05 Kawasaki Steel Corp. Hollow cathode gun and deposition device for ion plating process
US5009743A (en) * 1989-11-06 1991-04-23 Gatan Incorporated Chemically-assisted ion beam milling system for the preparation of transmission electron microscope specimens
JPH07254315A (ja) * 1994-03-14 1995-10-03 Nippon Sheet Glass Co Ltd 被膜の形成方法
JP2955916B2 (ja) * 1994-06-02 1999-10-04 住友重機械工業株式会社 シートプラズマの形成方法及び装置
JP4287936B2 (ja) * 1999-02-01 2009-07-01 中外炉工業株式会社 真空成膜装置
WO2002086932A1 (en) 2001-04-20 2002-10-31 Applied Process Technologies Magnetic mirror plasma source
JPWO2002098812A1 (ja) * 2001-06-04 2004-09-16 日本板硝子株式会社 透明基板の製造方法及び透明基板、並びに該透明基板を有する有機エレクトロルミネッセンス素子
JP5080977B2 (ja) * 2005-12-06 2012-11-21 新明和工業株式会社 シートプラズマ成膜装置
JP4906331B2 (ja) * 2005-12-06 2012-03-28 新明和工業株式会社 シートプラズマ成膜装置
KR101237184B1 (ko) * 2006-03-01 2013-02-25 신메이와 인더스트리즈,리미티드 플라즈마 건 및 이를 구비한 플라즈마 건 성막장치
WO2008136130A1 (ja) * 2007-04-24 2008-11-13 Canon Anelva Corporation プラズマ発生装置およびこれを用いた成膜方法並びに成膜装置
JP4901696B2 (ja) * 2007-11-06 2012-03-21 キヤノンアネルバ株式会社 成膜装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02225660A (ja) * 1988-06-23 1990-09-07 Kawasaki Steel Corp イオンプレーティング用蒸発装置
JPH073442A (ja) * 1993-06-16 1995-01-06 Asahi Glass Co Ltd 蒸着装置
JPH07258833A (ja) * 1994-03-25 1995-10-09 Nippon Sheet Glass Co Ltd アーク放電プラズマによる被膜の形成方法
US6103074A (en) * 1998-02-14 2000-08-15 Phygen, Inc. Cathode arc vapor deposition method and apparatus
TW432903B (en) * 1998-05-29 2001-05-01 Leybold Systems Gmbh Device for generating plasma
CN202072760U (zh) * 2011-04-26 2011-12-14 中国科学院金属研究所 一种电弧离子镀设备

Also Published As

Publication number Publication date
US9824867B2 (en) 2017-11-21
KR20140143373A (ko) 2014-12-16
TW201349945A (zh) 2013-12-01
JP5700695B2 (ja) 2015-04-15
KR101953946B1 (ko) 2019-03-04
WO2013153865A1 (ja) 2013-10-17
EP2838323A1 (en) 2015-02-18
US20150107987A1 (en) 2015-04-23
CN104221477B (zh) 2016-11-23
EP2838323B1 (en) 2017-11-15
CN104221477A (zh) 2014-12-17
EP2838323A4 (en) 2015-09-23
JP2013218985A (ja) 2013-10-24

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