CN104221477B - 等离子体产生装置、蒸镀装置以及等离子体产生方法 - Google Patents

等离子体产生装置、蒸镀装置以及等离子体产生方法 Download PDF

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Publication number
CN104221477B
CN104221477B CN201380019358.2A CN201380019358A CN104221477B CN 104221477 B CN104221477 B CN 104221477B CN 201380019358 A CN201380019358 A CN 201380019358A CN 104221477 B CN104221477 B CN 104221477B
Authority
CN
China
Prior art keywords
plasma
electrode
guns
generating device
focus coil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201380019358.2A
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English (en)
Chinese (zh)
Other versions
CN104221477A (zh
Inventor
古屋英二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chugai Ro Co Ltd
Original Assignee
Chugai Ro Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chugai Ro Co Ltd filed Critical Chugai Ro Co Ltd
Publication of CN104221477A publication Critical patent/CN104221477A/zh
Application granted granted Critical
Publication of CN104221477B publication Critical patent/CN104221477B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3458—Electromagnets in particular for cathodic sputtering apparatus
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
CN201380019358.2A 2012-04-12 2013-02-27 等离子体产生装置、蒸镀装置以及等离子体产生方法 Expired - Fee Related CN104221477B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012-090921 2012-04-12
JP2012090921A JP5700695B2 (ja) 2012-04-12 2012-04-12 プラズマ発生装置および蒸着装置並びにプラズマ発生方法
PCT/JP2013/055231 WO2013153865A1 (ja) 2012-04-12 2013-02-27 プラズマ発生装置および蒸着装置並びにプラズマ発生方法

Publications (2)

Publication Number Publication Date
CN104221477A CN104221477A (zh) 2014-12-17
CN104221477B true CN104221477B (zh) 2016-11-23

Family

ID=49327444

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380019358.2A Expired - Fee Related CN104221477B (zh) 2012-04-12 2013-02-27 等离子体产生装置、蒸镀装置以及等离子体产生方法

Country Status (7)

Country Link
US (1) US9824867B2 (enExample)
EP (1) EP2838323B1 (enExample)
JP (1) JP5700695B2 (enExample)
KR (1) KR101953946B1 (enExample)
CN (1) CN104221477B (enExample)
TW (1) TWI558275B (enExample)
WO (1) WO2013153865A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180066575A (ko) * 2016-12-09 2018-06-19 (주)트리플코어스코리아 아크 방전을 이용하는 플라즈마 토치용 양극 구조물 및 이를 구비하는 플라즈마 토치
CN117244174B (zh) * 2023-10-09 2024-07-19 深圳市国商联健康管理有限公司 用于智能清除癌细胞的等离子发生装置及其操作办法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4863581A (en) * 1987-02-12 1989-09-05 Kawasaki Steel Corp. Hollow cathode gun and deposition device for ion plating process
JP2898652B2 (ja) * 1988-06-23 1999-06-02 川崎製鉄株式会社 イオンプレーティング用蒸発装置
US5009743A (en) * 1989-11-06 1991-04-23 Gatan Incorporated Chemically-assisted ion beam milling system for the preparation of transmission electron microscope specimens
JPH073442A (ja) * 1993-06-16 1995-01-06 Asahi Glass Co Ltd 蒸着装置
JPH07254315A (ja) * 1994-03-14 1995-10-03 Nippon Sheet Glass Co Ltd 被膜の形成方法
JP2874548B2 (ja) * 1994-03-25 1999-03-24 日本板硝子株式会社 アーク放電プラズマによる被膜の形成方法
JP2955916B2 (ja) * 1994-06-02 1999-10-04 住友重機械工業株式会社 シートプラズマの形成方法及び装置
US6103074A (en) * 1998-02-14 2000-08-15 Phygen, Inc. Cathode arc vapor deposition method and apparatus
JP4287936B2 (ja) * 1999-02-01 2009-07-01 中外炉工業株式会社 真空成膜装置
DE19824077A1 (de) * 1998-05-29 1999-12-02 Leybold Systems Gmbh Vorrichtung zur Erzeugung von Plasma
ATE536628T1 (de) 2001-04-20 2011-12-15 Gen Plasma Inc Dipol-ionenquelle
JPWO2002098812A1 (ja) * 2001-06-04 2004-09-16 日本板硝子株式会社 透明基板の製造方法及び透明基板、並びに該透明基板を有する有機エレクトロルミネッセンス素子
KR20070095999A (ko) * 2005-12-06 2007-10-01 신메이와 인더스트리즈,리미티드 시트 플라즈마 성막장치
JP4906331B2 (ja) * 2005-12-06 2012-03-28 新明和工業株式会社 シートプラズマ成膜装置
KR101237184B1 (ko) * 2006-03-01 2013-02-25 신메이와 인더스트리즈,리미티드 플라즈마 건 및 이를 구비한 플라즈마 건 성막장치
JP4368417B2 (ja) 2007-04-24 2009-11-18 キヤノンアネルバ株式会社 プラズマ発生装置およびこれを用いた成膜方法並びに成膜装置
JP4901696B2 (ja) * 2007-11-06 2012-03-21 キヤノンアネルバ株式会社 成膜装置
CN202072760U (zh) * 2011-04-26 2011-12-14 中国科学院金属研究所 一种电弧离子镀设备

Also Published As

Publication number Publication date
US9824867B2 (en) 2017-11-21
WO2013153865A1 (ja) 2013-10-17
JP2013218985A (ja) 2013-10-24
EP2838323A1 (en) 2015-02-18
KR20140143373A (ko) 2014-12-16
US20150107987A1 (en) 2015-04-23
EP2838323A4 (en) 2015-09-23
JP5700695B2 (ja) 2015-04-15
CN104221477A (zh) 2014-12-17
TW201349945A (zh) 2013-12-01
KR101953946B1 (ko) 2019-03-04
TWI558275B (zh) 2016-11-11
EP2838323B1 (en) 2017-11-15

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SE01 Entry into force of request for substantive examination
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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20161123

Termination date: 20210227