KR101953946B1 - 플라스마 발생 장치와 증착 장치 및 플라스마 발생 방법 - Google Patents

플라스마 발생 장치와 증착 장치 및 플라스마 발생 방법 Download PDF

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KR101953946B1
KR101953946B1 KR1020147027089A KR20147027089A KR101953946B1 KR 101953946 B1 KR101953946 B1 KR 101953946B1 KR 1020147027089 A KR1020147027089 A KR 1020147027089A KR 20147027089 A KR20147027089 A KR 20147027089A KR 101953946 B1 KR101953946 B1 KR 101953946B1
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plasma
arms
arm
cathode
electrons
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KR20140143373A (ko
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에이지 후루야
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쥬가이로 고교 가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3458—Electromagnets in particular for cathodic sputtering apparatus
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
KR1020147027089A 2012-04-12 2013-02-27 플라스마 발생 장치와 증착 장치 및 플라스마 발생 방법 Active KR101953946B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012090921A JP5700695B2 (ja) 2012-04-12 2012-04-12 プラズマ発生装置および蒸着装置並びにプラズマ発生方法
JPJP-P-2012-090921 2012-04-12
PCT/JP2013/055231 WO2013153865A1 (ja) 2012-04-12 2013-02-27 プラズマ発生装置および蒸着装置並びにプラズマ発生方法

Publications (2)

Publication Number Publication Date
KR20140143373A KR20140143373A (ko) 2014-12-16
KR101953946B1 true KR101953946B1 (ko) 2019-03-04

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KR1020147027089A Active KR101953946B1 (ko) 2012-04-12 2013-02-27 플라스마 발생 장치와 증착 장치 및 플라스마 발생 방법

Country Status (7)

Country Link
US (1) US9824867B2 (enExample)
EP (1) EP2838323B1 (enExample)
JP (1) JP5700695B2 (enExample)
KR (1) KR101953946B1 (enExample)
CN (1) CN104221477B (enExample)
TW (1) TWI558275B (enExample)
WO (1) WO2013153865A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180066575A (ko) * 2016-12-09 2018-06-19 (주)트리플코어스코리아 아크 방전을 이용하는 플라즈마 토치용 양극 구조물 및 이를 구비하는 플라즈마 토치
CN117244174B (zh) * 2023-10-09 2024-07-19 深圳市国商联健康管理有限公司 用于智能清除癌细胞的等离子发生装置及其操作办法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100003423A1 (en) 2007-04-24 2010-01-07 Canon Anelva Corporation Plasma generating apparatus and film forming apparatus using plasma generating apparatus

Family Cites Families (17)

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Publication number Priority date Publication date Assignee Title
US4863581A (en) * 1987-02-12 1989-09-05 Kawasaki Steel Corp. Hollow cathode gun and deposition device for ion plating process
JP2898652B2 (ja) * 1988-06-23 1999-06-02 川崎製鉄株式会社 イオンプレーティング用蒸発装置
US5009743A (en) * 1989-11-06 1991-04-23 Gatan Incorporated Chemically-assisted ion beam milling system for the preparation of transmission electron microscope specimens
JPH073442A (ja) * 1993-06-16 1995-01-06 Asahi Glass Co Ltd 蒸着装置
JPH07254315A (ja) * 1994-03-14 1995-10-03 Nippon Sheet Glass Co Ltd 被膜の形成方法
JP2874548B2 (ja) * 1994-03-25 1999-03-24 日本板硝子株式会社 アーク放電プラズマによる被膜の形成方法
JP2955916B2 (ja) * 1994-06-02 1999-10-04 住友重機械工業株式会社 シートプラズマの形成方法及び装置
US6103074A (en) * 1998-02-14 2000-08-15 Phygen, Inc. Cathode arc vapor deposition method and apparatus
JP4287936B2 (ja) * 1999-02-01 2009-07-01 中外炉工業株式会社 真空成膜装置
DE19824077A1 (de) * 1998-05-29 1999-12-02 Leybold Systems Gmbh Vorrichtung zur Erzeugung von Plasma
WO2002086932A1 (en) 2001-04-20 2002-10-31 Applied Process Technologies Magnetic mirror plasma source
JPWO2002098812A1 (ja) * 2001-06-04 2004-09-16 日本板硝子株式会社 透明基板の製造方法及び透明基板、並びに該透明基板を有する有機エレクトロルミネッセンス素子
JP5080977B2 (ja) * 2005-12-06 2012-11-21 新明和工業株式会社 シートプラズマ成膜装置
JP4906331B2 (ja) * 2005-12-06 2012-03-28 新明和工業株式会社 シートプラズマ成膜装置
KR101237184B1 (ko) * 2006-03-01 2013-02-25 신메이와 인더스트리즈,리미티드 플라즈마 건 및 이를 구비한 플라즈마 건 성막장치
JP4901696B2 (ja) * 2007-11-06 2012-03-21 キヤノンアネルバ株式会社 成膜装置
CN202072760U (zh) * 2011-04-26 2011-12-14 中国科学院金属研究所 一种电弧离子镀设备

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100003423A1 (en) 2007-04-24 2010-01-07 Canon Anelva Corporation Plasma generating apparatus and film forming apparatus using plasma generating apparatus

Also Published As

Publication number Publication date
TWI558275B (zh) 2016-11-11
US9824867B2 (en) 2017-11-21
KR20140143373A (ko) 2014-12-16
TW201349945A (zh) 2013-12-01
JP5700695B2 (ja) 2015-04-15
WO2013153865A1 (ja) 2013-10-17
EP2838323A1 (en) 2015-02-18
US20150107987A1 (en) 2015-04-23
CN104221477B (zh) 2016-11-23
EP2838323B1 (en) 2017-11-15
CN104221477A (zh) 2014-12-17
EP2838323A4 (en) 2015-09-23
JP2013218985A (ja) 2013-10-24

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