TWI553875B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI553875B
TWI553875B TW100127417A TW100127417A TWI553875B TW I553875 B TWI553875 B TW I553875B TW 100127417 A TW100127417 A TW 100127417A TW 100127417 A TW100127417 A TW 100127417A TW I553875 B TWI553875 B TW I553875B
Authority
TW
Taiwan
Prior art keywords
insulating layer
oxide semiconductor
layer
semiconductor layer
electrode
Prior art date
Application number
TW100127417A
Other languages
English (en)
Chinese (zh)
Other versions
TW201225303A (en
Inventor
野田耕生
遠藤佑太
佐佐木俊成
Original Assignee
半導體能源研究所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 半導體能源研究所股份有限公司 filed Critical 半導體能源研究所股份有限公司
Publication of TW201225303A publication Critical patent/TW201225303A/zh
Application granted granted Critical
Publication of TWI553875B publication Critical patent/TWI553875B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
TW100127417A 2010-08-06 2011-08-02 半導體裝置 TWI553875B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010177037 2010-08-06

Publications (2)

Publication Number Publication Date
TW201225303A TW201225303A (en) 2012-06-16
TWI553875B true TWI553875B (zh) 2016-10-11

Family

ID=45555464

Family Applications (4)

Application Number Title Priority Date Filing Date
TW100127417A TWI553875B (zh) 2010-08-06 2011-08-02 半導體裝置
TW106117660A TW201733133A (zh) 2010-08-06 2011-08-02 半導體裝置
TW107136184A TWI663639B (zh) 2010-08-06 2011-08-02 半導體裝置
TW105122742A TWI595670B (zh) 2010-08-06 2011-08-02 半導體裝置

Family Applications After (3)

Application Number Title Priority Date Filing Date
TW106117660A TW201733133A (zh) 2010-08-06 2011-08-02 半導體裝置
TW107136184A TWI663639B (zh) 2010-08-06 2011-08-02 半導體裝置
TW105122742A TWI595670B (zh) 2010-08-06 2011-08-02 半導體裝置

Country Status (4)

Country Link
US (2) US20120032172A1 (OSRAM)
JP (1) JP5876682B2 (OSRAM)
KR (1) KR101991690B1 (OSRAM)
TW (4) TWI553875B (OSRAM)

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US8792284B2 (en) 2010-08-06 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor memory device
US10079053B2 (en) 2011-04-22 2018-09-18 Semiconductor Energy Laboratory Co., Ltd. Memory element and memory device
US9177872B2 (en) 2011-09-16 2015-11-03 Micron Technology, Inc. Memory cells, semiconductor devices, systems including such cells, and methods of fabrication
SG11201505088UA (en) * 2011-09-29 2015-08-28 Semiconductor Energy Lab Semiconductor device
US9048323B2 (en) * 2012-04-30 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013232567A (ja) * 2012-04-30 2013-11-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
TWI596778B (zh) 2012-06-29 2017-08-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
JP6306832B2 (ja) * 2012-07-06 2018-04-04 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
JP6293229B2 (ja) * 2012-10-17 2018-03-14 株式会社半導体エネルギー研究所 半導体装置
KR102220279B1 (ko) * 2012-10-19 2021-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법
JP6355374B2 (ja) * 2013-03-22 2018-07-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN103886813B (zh) * 2014-02-14 2016-07-06 上海和辉光电有限公司 双面显示器、双面显示器的控制装置及其制造方法
TWI672804B (zh) 2014-05-23 2019-09-21 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
CN104134699A (zh) * 2014-07-15 2014-11-05 京东方科技集团股份有限公司 一种薄膜晶体管、阵列基板及显示装置
JP6393936B2 (ja) * 2014-09-05 2018-09-26 Dic株式会社 薄膜トランジスタ、トランジスタアレイ、薄膜トランジスタの製造方法及びトランジスタアレイの製造方法
JP6293818B2 (ja) * 2016-05-31 2018-03-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN112530978B (zh) * 2020-12-01 2024-02-13 京东方科技集团股份有限公司 开关器件结构及其制备方法、薄膜晶体管膜层、显示面板

Citations (3)

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Publication number Priority date Publication date Assignee Title
TW201009936A (en) * 2008-08-25 2010-03-01 Taiwan Semiconductor Mfg Semiconductor device gate structure including a gettering layer
JP2010060683A (ja) * 2008-09-02 2010-03-18 Hitachi Displays Ltd 表示装置
US20100117086A1 (en) * 2008-11-07 2010-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device

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US7211825B2 (en) * 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP5126729B2 (ja) 2004-11-10 2013-01-23 キヤノン株式会社 画像表示装置
KR20070092455A (ko) * 2006-03-10 2007-09-13 삼성전자주식회사 표시 장치 및 그 제조 방법
JP4609797B2 (ja) * 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
DE102006039764A1 (de) * 2006-08-24 2008-02-28 Wabco Gmbh Nutzfahrzeuganhänger mit einem elektronisch gesteuerten Bremssystem
KR20080047085A (ko) * 2006-11-24 2008-05-28 엘지디스플레이 주식회사 액정표시장치용 어레이 기판 및 그 제조방법
KR20080052107A (ko) * 2006-12-07 2008-06-11 엘지전자 주식회사 산화물 반도체층을 구비한 박막 트랜지스터
KR101410926B1 (ko) * 2007-02-16 2014-06-24 삼성전자주식회사 박막 트랜지스터 및 그 제조방법
KR101375831B1 (ko) * 2007-12-03 2014-04-02 삼성전자주식회사 산화물 반도체 박막 트랜지스터를 이용한 디스플레이 장치
JP5584960B2 (ja) * 2008-07-03 2014-09-10 ソニー株式会社 薄膜トランジスタおよび表示装置
JP2010045159A (ja) * 2008-08-12 2010-02-25 Fujifilm Corp 薄膜電界効果型トランジスタ及びその製造方法
JP2010062233A (ja) * 2008-09-02 2010-03-18 Hitachi Displays Ltd 表示装置
JP5484853B2 (ja) * 2008-10-10 2014-05-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN101740631B (zh) * 2008-11-07 2014-07-16 株式会社半导体能源研究所 半导体装置及该半导体装置的制造方法
CN102473727B (zh) * 2009-06-29 2015-04-01 夏普株式会社 氧化物半导体、薄膜晶体管阵列基板及其制造方法和显示装置
KR101093424B1 (ko) * 2009-11-10 2011-12-14 삼성모바일디스플레이주식회사 유기전계발광 표시 장치 및 그의 제조 방법
KR101511076B1 (ko) * 2009-12-08 2015-04-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP5727204B2 (ja) * 2009-12-11 2015-06-03 株式会社半導体エネルギー研究所 半導体装置の作製方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201009936A (en) * 2008-08-25 2010-03-01 Taiwan Semiconductor Mfg Semiconductor device gate structure including a gettering layer
JP2010060683A (ja) * 2008-09-02 2010-03-18 Hitachi Displays Ltd 表示装置
US20100117086A1 (en) * 2008-11-07 2010-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device

Also Published As

Publication number Publication date
TW201639177A (zh) 2016-11-01
JP2012054544A (ja) 2012-03-15
KR20120024397A (ko) 2012-03-14
TWI595670B (zh) 2017-08-11
KR101991690B1 (ko) 2019-06-21
TWI663639B (zh) 2019-06-21
TW201909257A (zh) 2019-03-01
US20170278976A1 (en) 2017-09-28
US20120032172A1 (en) 2012-02-09
TW201733133A (zh) 2017-09-16
TW201225303A (en) 2012-06-16
JP5876682B2 (ja) 2016-03-02

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