TWI553033B - 光學半導體元件外圍封裝用樹脂組合物及使用其所得之光學半導體發光裝置 - Google Patents
光學半導體元件外圍封裝用樹脂組合物及使用其所得之光學半導體發光裝置 Download PDFInfo
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- TWI553033B TWI553033B TW099130215A TW99130215A TWI553033B TW I553033 B TWI553033 B TW I553033B TW 099130215 A TW099130215 A TW 099130215A TW 99130215 A TW99130215 A TW 99130215A TW I553033 B TWI553033 B TW I553033B
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- optical semiconductor
- resin composition
- semiconductor element
- resin layer
- emitting device
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Classifications
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
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- C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
- C08G59/4215—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof cycloaliphatic
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
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- C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
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- C08G59/3245—Heterocylic compounds containing only nitrogen as a heteroatom
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
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- C08J3/20—Compounding polymers with additives, e.g. colouring
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
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- C08K5/53—Phosphorus bound to oxygen bound to oxygen and to carbon only
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- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/40—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes epoxy resins
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Description
本發明係關於一種用於光學半導體元件外圍封裝之樹脂組合物,其係圍繞一發光元件形成之一絕緣樹脂層形成材料及其反射由該發光元件發射之光以提供方向性,且本發明係關於藉由使用其所得之一光學半導體發光裝置。
迄今為止,具有安裝於其內之一發光元件之一光學半導體發光裝置係經設計使得一光學半導體元件2經安裝於一金屬引線框1上,且形成一絕緣樹脂層3以包圍該光學半導體元件2之除其上側外,如圖1所示。在圖1中,4係電連接形成於該金屬引線框1上之電極電路(未顯示)至該光學半導體元件2之接線。
在此一光學半導體發光裝置中,該絕緣樹脂層3係由通常諸如聚鄰苯二甲醯胺樹脂(PPA)等之熱塑性樹脂透過射出模製形成。通常將一白色顏料摻入該熱塑性樹脂,以反射由該光學半導體元件2發射之光及賦予其方向性(參見專利文件1)。
在需要高耐熱性之情況下,主要使用含有燒結氧化鋁之陶瓷材料來形成代替該絕緣樹脂層3之一部分(參見專利文件2)。然而,鑒於大量生產之適宜性及此等封裝之成本等,及此外該反射器(反射部分)之形狀再現性,形成對應於來自該陶瓷材料之該絕緣樹脂層3之部分係成問題的。
鑒於該情形,最近,為了解決該等問題,在製造光學半導體發光裝置中之主流係用熱固性樹脂轉移成型。由於其之經固化材料之表面需具有高度光反射率,故用於透過轉移成型製造之該熱固性樹脂形成材料通常為包含諸如雙酚A環氧樹脂或類似物之環氧樹脂與諸如酸酐或類似物之固化劑之一組合之環氧樹脂組合物。
最近,在該情形下,發光裝置之亮度被進一步提高,且對於用於光學半導體發光裝置之該樹脂組合物期望具有比以前更高耐熱性及耐光性之材料。舉例而言,作為增強用於光學半導體發光裝置之該樹脂組合物之耐熱性及耐光性之方法,將脂環族環氧樹脂用於光吸收以抑制光降解,且此用於一些方面(參見專利文件3)。
專利文件1:JP-A-2002-283498
專利文件2:JP-A-2004-288937
專利文件3:JP-A-2004-339319
然而,由於該組合物之反射器材料幾乎無法被高度填滿且由於隨著產生毛刺該樹脂組合物之成形性變差,故如上述包含脂環族環氧樹脂之樹脂組合物至今無法獲得足夠的特性;且因此,該絕緣樹脂層3現在仍通常由上述熱塑性樹脂形成,如以上所述。
然而,使用熱塑性樹脂作為該絕緣樹脂層3之形成材料涉及如下之一些問題:特定言之,由於無鉛技術的影響,諸如上述光學半導體發光裝置之表面安裝封裝目前需具有耐熱性。因此,儘管需要在高焊料安裝溫度下之耐熱變形性及對功率提升且亮度增加之光學半導體元件2之更長期耐熱性,仍會發生在高溫下該元件變色之問題,且因此會發生光反射效率降低及對用於囊封該光學半導體元件2上部之囊封樹脂材料之粘附性減弱之其他問題。
就此等觀點而言,強烈期望可解決熱塑性樹脂之長期高溫耐熱性之問題及陶瓷材料之大規模生產問題之技術。
本發明已考慮以上情形而完成,且其之一目的係提供長期高溫耐熱性極佳且能夠賦予良好光反射率之用於光學半導體元件外圍封裝之樹脂組合物,及提供用該樹脂組合物所製得且大規模生產性與成本效能極佳的光學半導體發光裝置。
即,本發明係關於以下(1)至(5)項。
(1)一種用於形成具有一凹陷部分(其中容納一金屬引線框及安裝於其上之一光學半導體元件)之光學半導體元件外圍封裝之一絕緣樹脂層之樹脂組合物,其中該樹脂組合物包含以下成份(A)至(D),且該等成份(C)與(D)係以(C)/(D)為0.3至3.0重量計之一摻合比包含:
(A)環氧樹脂;
(B)酸酐固化劑;
(C)白色顏料;及
(D)無機填料。
(2)如(1)項之樹脂組合物,其中該成份(D)係氧化鈦。
(3)如(2)項之樹脂組合物,其中該氧化鈦具有一金紅石型晶體結構。
(4)如(1)至(3)項中任一項之樹脂組合物,其中基於全部樹脂組合物,該等成份(C)與(D)之總含量係10重量%至90重量%。
(5)一種光學半導體發光裝置,其包含:一絕緣樹脂層;形成於該絕緣樹脂層中之一凹陷部分;配置於該凹陷部分中之一金屬引線框;及配置於該金屬引線框上之一光學半導體元件,其中該絕緣樹脂層係由如(1)至(4)項中任一項之用於光學半導體元件外圍封裝之樹脂組合物形成。
特定言之,本發明人為了獲得受到保護免於受熱變色且長期高溫耐熱性極佳之用於光學半導體元件外圍封裝之樹脂組合物而不懈地研究。結果,本發明人已發現當使用為熱固性樹脂之環氧樹脂與額外使用白色顏料及無機填料組合且當將該二者之重量摻合比界定為落入一特定範圍內時,則該二者之特性被協同展現,且由於該協同作用,該樹脂組合物可維持長期高耐熱變色能力,且此外,由於使用其中之環氧樹脂,該樹脂組合物能夠透過其中之轉移成型而囊封於一模具中,且因此,就大量生產性而言,該樹脂組合物係有利的且可因此達成預期目的。基於此等發現,本發明人已實現本發明。
如上述,本發明提供一種用於具有一凹陷部分(其中容納一金屬引線框及一安裝於其上之光學半導體元件)之光學半導體元件外圍封裝之一絕緣樹脂層之樹脂組合物,其中該絕緣樹脂層形成材料包含含有環氧樹脂[成份(A)]、酸酐固化劑[成份(B)]、白色顏料[成份(C)]及無機填料[成份(D)]之樹脂組合物,且其中該白色顏料與該無機填料之摻合比[(C)/(D)]係經界定為落入0.3至3.0之範圍內作為其等之重量比。因此,該樹脂組合物之焊錫耐熱性及長期高溫耐熱性極佳,且展現極佳的耐光降解性能力,且因此實現良好的光反射率。因此,其中該絕緣樹脂層係由該樹脂組合物形成之光學半導體發光裝置具有良好的光導向性,因此可發射穩定的光且充分展現其功能。
當使用氧化鈦作為白色顏料[成份(C)]時,由於其之良好的分散性及化學穩定性,則其實現該絕緣樹脂層之高度白度及極佳的光反射率。
當使用具有一金紅石型晶體結構之氧化鈦時,則其增強該絕緣樹脂層之更佳的長期高溫耐熱性。
當該白色顏料[成份(C)]與該無機填料[成份(D)]之總含量係在基於全部樹脂組合物之10重量%至90重量%之範圍內時,則該絕緣樹脂層之線性膨脹係數可減小且該樹脂組合物實現良好的流動性。
本發明之用於光學半導體元件外圍封裝之樹脂組合物(本文中此可被稱作「樹脂組合物」)被用作用於形成圖1所示之該光學半導體發光裝置中之該絕緣樹脂層3之材料,如上所述;且此包含環氧樹脂(成份A)、酸酐固化劑(成份B)、白色顏料(成份C)及無機填料(成份D)。一般而言,該樹脂組合物係液態、粉末狀或呈藉由將粉末壓片而製得之小塊的形式,且被用於囊封。
該環氧樹脂(成份A)之實例包含諸如雙酚A環氧樹脂、雙酚F環氧樹脂、苯酚-酚醛清漆環氧樹脂、甲酚-酚醛清漆環氧樹脂等之酚醛清漆環氧樹脂;脂環族環氧樹脂;諸如異氰尿酸三縮水甘油酯、乙內醯脲環氧樹脂等之含氮環狀環氧樹脂;諸如氫化雙酚A環氧樹脂、脂肪族環氧樹脂、縮水甘油醚環氧樹脂、雙酚S環氧樹脂等之作為具低吸水率之經固化材料之主流的聯苯環氧樹脂;二環環氧樹脂及萘環氧樹脂。此處此等可單獨或組合使用。在該等環氧樹脂中,就極佳的透明度及耐變色性而言,較佳的係單獨或組合使用脂環族環氧樹脂及異氰尿酸三縮水甘油酯。
在室溫下該環氧樹脂(成份A)可為固態或液態,但是一般而言,本文所用之該環氧樹脂之平均環氧當量較佳為90克/當量至1000克/當量。在環氧樹脂為固態之情況下,其軟化點較佳為160℃或更低。此係因為,當該環氧當量過小時,則該樹脂組合物之該經固化材料可為脆的,及當該環氧當量過大時,則該樹脂組合物之該經固化材料之玻璃態轉變溫度(Tg)趨於變低。
該酸酐固化劑(成份B)之實例包含鄰苯二甲酸酐、順丁烯二酸酐、偏苯三甲酸酐、苯均四酸酐、六氫鄰苯二甲酸酐、四氫鄰苯二甲酸酐、甲基納迪克酸酐(methylnadic anhydride)、納迪克酸酐、戊二酸酐、甲基六氫鄰苯二甲酸酐及甲基四氫鄰苯二甲酸酐。此處此等可單獨或組合使用。在該等酸酐固化劑中,使用鄰苯二甲酸酐、六氫鄰苯二甲酸酐、四氫鄰苯二甲酸酐、甲基六氫鄰苯二甲酸酐係較佳的。更佳地,該酸酐固化劑(成份B)具有自大約140至200之分子量,且亦較佳的係無色或淺黃色酸酐固化劑。
該環氧樹脂(成份A)與該酸酐固化劑(成份B)之摻合比較佳係經界定成使能夠與該酸酐固化劑(成份B)中之環氧基反應之活性基團(酸酐基或羥基)相對於該環氧樹脂(成份A)中之1當量環氧基可為0.5當量至1.5當量,更佳為0.7當量至1.2當量。此係因為,當該活性基團之量過小時,則該樹脂組合物之固化速度可能較低且其經固化材料之玻璃態轉變溫度(Tg)趨於變低;但是當該活性基團之量過大時,則該樹脂組合物之耐濕氣性趨於變得更低。
關於該酸酐固化劑(成份B),可取決於其目的及用途,將除該酸酐固化劑外之任何其他用於環氧樹脂之固化劑(舉例而言,酚類固化劑、胺類固化劑、以醇部分酯化之酸酐固化劑之偏酯、或諸如六氫鄰苯二甲酸、四氫鄰苯二甲酸、甲基六氫鄰苯二甲酸或類似物之羧酸固化劑)單獨或與上述酸酐固化劑及酚類固化劑組合使用。舉例而言,在組合使用羧酸固化劑之情況下,其可加速固化速度,且可提高生產性。當使用該等固化劑時,其等之摻合比可符合在使用上述酸酐固化劑之情況下之摻合比(當量比)。
連同上述成份A與成份B一起存於該樹脂組合物中之該白色顏料(成份C)之實例包含諸如氧化鈦、氧化鋅、鉛白、高嶺土、碳酸鈣、氧化鋯之無機白色顏料。此處可單獨或組合使用此等之一者或多者。其中,較佳的係使用具有極佳白度、大光反射率、良好遮蓋力及著色力、高分散性、極佳耐候性及極其出色的化學穩定性之不同良好特性之氧化鈦。特定言之,當長時間暴露在高溫下時,就其在約450奈米波長下維持高光反射率之能力而言,更佳的係僅使用具有一金紅石型晶體結構之氧化鈦或將其與具有一銳鈦礦型晶體混合物之氧化鈦組合使用,其中金紅石型氧化鈦之摻合比更高。在該組合系統中,較佳地,該銳鈦礦型氧化鈦之量係為雜質級,或換言之,期望該組合系統實質上可為金紅石型氧化鈦之單一系統。其中,就其之流動性與光阻隔性而言,更佳的係使用具有0.05微米至1.0微米之一平均粒度之氧化鈦。就其之光反射率而言,甚至更佳的係使用具有0.08微米至0.5微米之一平均粒度之氧化鈦。可利用一雷射繞射/散射類型粒度分佈分析儀測量該平均粒度。
較佳地,界定該白色顏料(成份C)之含量使其落入該全部樹脂組合物之5重量%至90重量%之範圍內,但就其之著色性與反射率而言,該含量更佳係在該全部樹脂組合物之10重量%至60重量%之範圍內。此係因為,當成份C之含量過小時,則白度程度本身可變低且反射率可因此被降低;但是當成份C之含量過大時,則該絕緣樹脂層之表面幾乎無法平滑且反射率可因此趨於降低。
連同上述成份A至C一起存於該樹脂組合物中之該無機填料(成份D)之實例包含諸如石英玻璃粉、滑石之矽石粉、諸如熔融矽石之粉末與結晶二氧化矽之粉末之矽石粉、氧化鋁粉末、氮化鋁粉末及氮化矽粉末。尤其,就減小該絕緣樹脂層之線性膨脹係數而言,較佳係使用矽石粉;且尤其就其之高填充能力與高流動性而言,更佳係使用球形熔融矽石粉末。甚至更佳的係使用具有5微米至60微米之平均粒度之粉末,仍更佳的係使用具有15微米至45微米之平均粒度之粉末。可利用一雷射繞射/散射類型粒度分佈分析儀測量該平均粒度。
較佳將該無機填料(成份D)之含量界定為使該白色顏料(成份C)及該無機填料之總含量可為基於該全部樹脂組合物之5重量%至90重量%,更佳地,就減小該樹脂層之線性膨脹係數與確保該樹脂組合物之流動性而言,其總含量可為10重量%至80重量%。
必須將該白色顏料(成份C)與該無機填料(成份D)之摻合比[成份C/成份D]界定為使成份C/成份D之重量比落入0.3至3.0之範圍內。尤其較佳地,就分散性而言,將成份C/成份D之比率界定為落入0.5至2.0之範圍內。此係因為,當該摻合比超出上述範圍且當成份C/成份D之比率過小時,則該樹脂層之長期高溫耐熱性可變能降低,但是與之相反,當成份C/成份D之比率過大時,則該流動性可能降低且該樹脂組合物可能難以透過轉移成型而塑形,且最終,此可能對該絕緣樹脂層之反射率具有負面影響,使得該經固化材料之平滑度可能變差。
除上述成份A至D之外,若需要,可將不同添加劑摻入本發明之樹脂組合物中,其諸如固化促進劑、抗氧化劑、改質劑、消泡劑、調平劑、脫模劑等。
該固化促進劑之實例包含諸如1,8-二氮雜二環[5.4.0]十一烷-7、三伸乙基二胺、三-2,4,6-二甲胺基甲基苯酚、N,N-二甲基苄胺、N,N-二甲基胺基苯及N,N-二甲基胺基環己烷之第三胺,諸如2-乙基-4-甲基咪唑及2-甲基咪唑之咪唑化合物、諸如三苯基膦、四苯基硼酸四苯基鏻及o,o-二乙基二硫代磷酸四正丁基鏻之磷化合物、第四銨鹽、有機金屬鹽及其衍生物。此等可單獨或以其等之兩個或兩個以上之組合使用。此等固化促進劑中較佳者係第三胺、咪唑化合物及磷化合物。為了獲得具有一低著色度且為透明及韌性之一經固化材料,尤其較佳的係在此等固化促進劑中使用磷化合物。
較佳將該固化促進劑之含量界定為相對於該環氧樹脂(成份A)為0.01重量%至8.0重量%,更佳為0.1重量%至3.0重量%。此係因為,當該固化促進劑之含量過小時,則該樹脂無法獲得足夠的固化促進作用,但是當該固化促進劑之含量過大時,該待獲得之經固化材料可趨於變色。
該抗氧化劑之實例包含酚類化合物、胺類化合物、有機硫化合物及膦化合物之抗氧化劑。該改質劑之實例包含諸如二醇類、聚矽氧及醇類之習知改質劑。該消泡劑之實例包含諸如聚矽氧之習知消泡劑。
本發明之樹脂組合物可(例如)如下述製得:簡言之,用一揑合機將該等成份A至D及各種視需要的添加劑適宜地混合、揑合及熔融混合,及接著將此冷卻至室溫且碾磨得一細粉末狀樹脂組合物。
如上述如此獲得之該樹脂組合物之經固化材料在430奈米至1300奈米波長下較佳具有至少80%之光反射率,更佳為至少90%,甚至更佳為至少94%。該光反射率之最上限為100%。該光反射率係(例如)以下述方式測量。在一預定固化條件下,舉例而言,在150℃下成型4分鐘及隨後在150℃下固化3小時,製得該樹脂組合物之一1毫米厚的經固化材料。此經固化材料在該波長下之反射率可在室溫(25±10℃)下利用一分光光度計(例如,由JASCO Corp.製造之分光光度計V-670)測量。
利用本發明之樹脂組合物獲得之光學半導體發光裝置可如下製得:簡言之,製備其上安裝有一光學半導體元件之一金屬引線框,將此固定於一轉移成型機之模具中,且使上述樹脂組合物於其中轉移成型,以形成一絕緣樹脂層。如圖1所示,以該方式製得一光學半導體發光裝置單元,其包含該絕緣樹脂層3、形成於該絕緣樹脂層3中之該凹陷部分、配置於該凹陷部分內之該金屬引線框1及安裝於該金屬引線框1上之該光學半導體元件2。
被安裝於該金屬引線框1上之該光學半導體元件2上之該絕緣樹脂層3包圍之該凹陷部分空間係進一步以一透明樹脂填充且以其囊封。該透明樹脂可為(例如)習知用於本技術中之一透明環氧樹脂或類似物。因此,製得所要光學半導體發光裝置。
下文描述實例與對照實例。然而,本發明不應限制於此等實例。
下文所提及之組成成份係在製得一樹脂組合物之前先製備得。
環氧樹脂:1,3,5-三縮水甘油基異氰尿酸酯(平均環氧當量:100克/當量,熔點:100℃)。
酸酐:甲基六氫鄰苯二甲酸酐(酸當量:168克/當量)。
氧化鈦a:具有0.21微米之平均粒度之金紅石型。
氧化鈦b:具有0.18微米之平均粒度之銳鈦礦型。
矽石粉:具有23微米之平均粒度之球形熔融矽石。
抗氧化劑:9,10-二氫-9-氧雜-10-磷雜菲-10-氧化物。
固化促進劑:o,o-二乙基二硫代磷酸四正丁基鏻。
實例1至5、參考實例1與2、對照實例1與2
將下表1中所示之該等成份以其中所示之比率摻混,接著在一燒杯中熔融混合,老化,然後冷卻至室溫及碾磨以製備所要之細粉末狀環氧樹脂組合物。
分析由此製得之實例與對照實例之該等環氧樹脂組合物,以測量其等之反射率(初始階段,在高溫下保持長時間後)。該等結果顯示於下表1。
反射率
在一預定固化條件(條件:在150℃下成型4分鐘+在150℃下固化3小時)下,將該環氧樹脂組合物形成為具有1毫米厚度之一試片;且在初始階段中及在150℃下留置168小時後測量該試片(經固化材料)之總反射率。使用JASCO Corp製造之分光光度計V-670作為測試儀。在室溫(25℃)下測量各樣品在450奈米波長下之光反射率。
*以[氧化鈦之量]/[矽石粉之量]計算
從以上結果可見:實例中之該等樣品在初始階段與在高溫下留置一長時段後全部具有高反射率數據,且因此長期高溫耐熱性極佳。
與此等相比,其中氧化鈦(該氧化鈦不是一金紅石型氧化鈦而是一銳鈦礦型氧化鈦)比矽石粉之重量摻合比落入特定範圍內之參考實例1與2之該等樣品可具有大於90%之初始反射率,但在高溫下留置一長時段後其反射率低。關於其中使用金紅石型氧化鈦,但氧化鈦與矽石粉之重量摻合比落在特定範圍外之對照實例1與2之該等樣品,在初始階段中與在高溫下留置一長時間段後,其等之反射率皆低,或即,該等對照樣品之包括長期高溫耐熱性之耐熱性差。
使用以上該等實例之樣品之細粉末狀環氧樹脂組合物,製得具有圖1所示之構造之一光學半導體發光裝置。簡言之,將一光學半導體元件(大小:0.3毫米×0.3毫米)2安裝於一42-合金(鍍銀)引線框1上,且使形成於該金屬引線框1上之該電極電路與該光學半導體元件2藉由接線4互相電連接。將如此製備之該光學半導體發光裝置置於一轉移成型機內,且於其中轉移成型以製得所要之包含該絕緣樹脂層3、形成於該絕緣樹脂層3中之該凹陷部分、配置於該凹陷部分內之該金屬引線框及安裝於該金屬引線框1上之該光學半導體元件2之光學半導體發光裝置單元,如圖1所示(成型條件:在150℃下成型×4分鐘+在150℃下固化×3小時)。如此獲得之該光學半導體發光裝置係良好而無問題的。
雖然本發明已參照其之特定實施例作詳細描述,但熟悉此項技術者將明白可在不脫離本發明之精神與範疇下在其中作不同的改變及修飾。
附帶地,本申請案係基於2009年9月7日申請之日本專利申請案第2009-205753號,該等內容係以引用的方式併入本文中。
本文引述之所有參考文獻之全文係以引用的方式併入本文中。
本發明之用於光學半導體元件外圍封裝之樹脂組合物適用作為在一發光元件周圍形成以包圍其及反射由安裝於一光學半導體發光裝置中之發光元件所發射光以提供方向性之絕緣樹脂層形成材料。
1...金屬引線框
2...光學半導體元件
3...絕緣樹脂層
4...接線
圖1係以圖形顯示一光學半導體發光裝置之構造之一截面圖。
1...金屬引線框
2...光學半導體元件
3...絕緣樹脂層
4...接線
Claims (2)
- 一種用以形成用於具有一凹陷部分(其中容納一金屬引線框及安裝於其上之一光學半導體元件)之光學半導體元件外圍封裝之一絕緣樹脂層之樹脂組合物,其中該樹脂組合物包括以下成份(A)至(E),並以(C)/(D)為0.3至0.5之重量摻合比包含該等成份(C)與(D),且基於全部樹脂組合物,該等成份(C)與(D)之總含量係10重量%至90重量%:(A)環氧樹脂;(B)酸酐固化劑;(C)白色顏料;(D)無機填料;及(E)包含磷化合物之固化促進劑,該環氧樹脂係異氰尿酸三縮水甘油酯。
- 一種光學半導體發光裝置,其包括:一絕緣樹脂層、形成於該絕緣樹脂層中之一凹陷部分、配置於該凹陷部分內之一金屬引線框及配置於該金屬引線框上之一光學半導體元件,其中該絕緣樹脂層係由如請求項1之用於光學半導體元件外圍封裝之樹脂組合物形成。
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KR20110026401A (ko) | 2011-03-15 |
US8664685B2 (en) | 2014-03-04 |
JP2011060819A (ja) | 2011-03-24 |
US20110057228A1 (en) | 2011-03-10 |
CN102010570A (zh) | 2011-04-13 |
CN105670224A (zh) | 2016-06-15 |
KR101696934B1 (ko) | 2017-01-16 |
CN105733187A (zh) | 2016-07-06 |
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