TWI552954B - 用於石墨烯形成之方法與系統 - Google Patents

用於石墨烯形成之方法與系統 Download PDF

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TWI552954B
TWI552954B TW102106432A TW102106432A TWI552954B TW I552954 B TWI552954 B TW I552954B TW 102106432 A TW102106432 A TW 102106432A TW 102106432 A TW102106432 A TW 102106432A TW I552954 B TWI552954 B TW I552954B
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substrate
graphene
plasma
processing chamber
room temperature
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TW102106432A
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Chinese (zh)
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TW201336784A (zh
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博易得大衛Ａ
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加利福尼亞州理工學院
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    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
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    • H01J37/32—Gas-filled discharge tubes
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    • H01J37/32082—Radio frequency generated discharge
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Nanotechnology (AREA)
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  • Plasma & Fusion (AREA)
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  • General Chemical & Material Sciences (AREA)
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  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Ceramic Engineering (AREA)
  • Composite Materials (AREA)
  • Electromagnetism (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
TW102106432A 2012-02-24 2013-02-23 用於石墨烯形成之方法與系統 TWI552954B (zh)

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Application Number Priority Date Filing Date Title
US201261603104P 2012-02-24 2012-02-24
US201261607337P 2012-03-06 2012-03-06
US201261677323P 2012-07-30 2012-07-30

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TW201336784A TW201336784A (zh) 2013-09-16
TWI552954B true TWI552954B (zh) 2016-10-11

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Country Status (8)

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US (3) US9150418B2 (fr)
EP (1) EP2817261A4 (fr)
JP (2) JP6262156B2 (fr)
KR (1) KR102107382B1 (fr)
CN (2) CN104136368B (fr)
SG (3) SG10201908213VA (fr)
TW (1) TWI552954B (fr)
WO (1) WO2013126671A1 (fr)

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SG10201908213VA (en) * 2012-02-24 2019-10-30 California Inst Of Techn Method and system for graphene formation
KR101954999B1 (ko) * 2013-01-14 2019-03-06 캘리포니아 인스티튜트 오브 테크놀로지 그라펜을 형성시키는 방법 및 시스템
US9242865B2 (en) 2013-03-05 2016-01-26 Lockheed Martin Corporation Systems and methods for production of graphene by plasma-enhanced chemical vapor deposition
US9458020B2 (en) * 2013-05-06 2016-10-04 Centre National De La Recherche Scientifique Process and device for forming a graphene layer
GB201318463D0 (en) * 2013-08-13 2013-12-04 Medical Res Council Graphene Modification
WO2015149116A1 (fr) * 2014-04-04 2015-10-08 Commonwealth Scientific And Industrial Research Organisation Procédé et produit de graphène
US10072355B2 (en) * 2014-04-15 2018-09-11 Board Of Regents, The University Of Texas System Methods of forming graphene single crystal domains on a low nucleation site density substrate
WO2016006943A1 (fr) * 2014-07-09 2016-01-14 재단법인대구경북과학기술원 Nanofil métallique ayant une structure coque-noyau revêtue de graphène, et son procédé de fabrication
CN104211054B (zh) * 2014-09-09 2016-05-18 中国科学院化学研究所 一种可控制备石墨烯的方法
CN104576457A (zh) * 2014-12-26 2015-04-29 常州二维碳素科技有限公司 一种对石墨烯制件进行表面处理的设备及其处理方法
KR101723521B1 (ko) * 2015-02-26 2017-04-05 주성엔지니어링(주) 그래핀 성장 장치
KR101717476B1 (ko) * 2015-02-27 2017-03-27 주성엔지니어링(주) 그래핀 성장 장치
TWI539043B (zh) 2015-07-21 2016-06-21 財團法人工業技術研究院 石墨烯花的形成方法
JP6661189B2 (ja) * 2015-10-02 2020-03-11 国立研究開発法人産業技術総合研究所 グラフェン膜の作製方法
CN105220128B (zh) * 2015-11-16 2018-03-16 哈尔滨工业大学 一种锆合金表面原位垂直生长石墨烯防腐层的制备方法
JP6652770B2 (ja) * 2016-04-04 2020-02-26 株式会社不二越 固体高分子形燃料電池用セパレータの製造方法
NO345837B1 (en) * 2016-05-04 2021-08-30 Cealtech As Apparatus for large scale producing 3D graphene and method describing the same
CN106248221A (zh) * 2016-07-19 2016-12-21 中国科学院重庆绿色智能技术研究院 一种基于石墨烯的非制冷红外探测器及原位制作方法
US9997334B1 (en) * 2017-02-09 2018-06-12 Lyten, Inc. Seedless particles with carbon allotropes
US10825586B2 (en) * 2017-08-30 2020-11-03 Ultra Conductive Copper Company, Inc. Method and system for forming a multilayer composite structure
ES2717199B2 (es) * 2017-12-19 2022-07-21 Pamies Javier Biela Planta de biogas
CN109975368A (zh) * 2019-03-21 2019-07-05 西南大学 一种用于气敏传感的石墨烯氧化锡复合材料的制备方法
CN109930133A (zh) * 2019-03-21 2019-06-25 西南大学 一种用于气敏传感的石墨烯氧化锆复合材料的制备方法
EP4100362A1 (fr) 2020-02-03 2022-12-14 CealTech AS Procédé et dispositif de production à grande échelle de graphène
JP2022007053A (ja) * 2020-06-25 2022-01-13 東京エレクトロン株式会社 成膜方法及び成膜装置
CN111847432B (zh) * 2020-07-24 2023-08-29 北京石墨烯研究院 大面积多层石墨烯及其制备方法
US11515163B2 (en) * 2021-01-06 2022-11-29 Applied Materials, Inc. Low temperature graphene growth
US20220254641A1 (en) * 2021-02-11 2022-08-11 Applied Materials, Inc. Method and apparatus of low temperature plasma enhanced chemical vapor deposition of graphene
WO2023079018A1 (fr) * 2021-11-04 2023-05-11 Universite Picardie Jules Verne Procédé de dépôt direct de graphène ou d'oxyde de graphène sur un substrat d'intérêt

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