JP2015510489A - グラフェン形成のための方法およびシステム - Google Patents
グラフェン形成のための方法およびシステム Download PDFInfo
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- JP2015510489A JP2015510489A JP2014558853A JP2014558853A JP2015510489A JP 2015510489 A JP2015510489 A JP 2015510489A JP 2014558853 A JP2014558853 A JP 2014558853A JP 2014558853 A JP2014558853 A JP 2014558853A JP 2015510489 A JP2015510489 A JP 2015510489A
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- graphene
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Abstract
Description
この出願は、2012年2月24日に出願された、「低減された処理温度でのグラフェンの形成方法」と題した米国仮出願第61/603104号、2012年3月6日に出願された、「低減された処理温度でのグラフェンの形成方法」と題した米国仮出願第61/607337号、および2012年7月30日に出願された、「低減された温度で高品質且つ大面積グラフェンを形成する単一ステップ法」と題した米国仮出願第61/677323号の優先権を主張し、全ての目的のためにそれらの開示をここで参照として完全に組み込む。
Claims (21)
- グラフェンフィルムを形成する方法であって、該方法は、
基板を低減された圧力にて処理チャンバ中に設置するステップと、
前記基板の少なくとも一部に表面処理プロセスを行うステップと、
炭素含有材料を前記処理チャンバ中に供給するステップと、
前記基板を前記炭素含有材料に曝すステップと、
前記炭素含有材料の一部を前記基板上でグラフェンフィルムに変換するステップと、
を含む方法。 - ガスを供給するステップと、
前記表面処理プロセスの前に前記基板を前記ガスに曝すステップと、
をさらに含む、請求項1に記載の方法。 - 前記ガスは水素である、請求項2に記載の方法。
- 前記表面処理プロセスは高周波水素プラズマを含む、請求項3に記載の方法。
- 前記表面処理プロセスは、高周波プラズマ洗浄プロセスを含む、請求項1に記載の方法。
- 前記基板は銅箔を備える、請求項1に記載の方法。
- 前記低減された圧力は500mTorr未満である、請求項1に記載の方法。
- 前記炭素含有材料は、メタン、エタン、プロパンまたはブタンの少なくとも1つを含む、請求項1に記載の方法。
- グラフェンを形成する方法であって、該方法は、
基板を用意するステップと、
前記基板を減圧環境に置くステップと、
キャリアガスを供給するステップと、
炭素源を供給するステップと、
前記基板の少なくとも一部を前記キャリアガスおよび前記炭素源に曝すステップと、
前記基板の前記少なくとも一部に表面処理プロセスを行うステップと、
前記炭素源の一部を前記基板の前記少なくとも一部上でグラフェンに変換するステップと、
を含む方法。 - 前記基板は銅箔を備える、請求項9に記載の方法。
- 前記表面処理プロセスは高周波プラズマ洗浄プロセスを含む、請求項9に記載の方法。
- 前記キャリアガスは水素を含み、前記表面処理プロセスは高周波水素プラズマプロセスを含む、請求項9に記載の方法。
- 前記炭素源はメタンを含む、請求項9に記載の方法。
- 前記キャリアガスの供給と前記炭素源の供給は同時に行われる、請求項9に記載の方法。
- 前記炭素源は、キャリアガスおよび炭素源の流れの合計の0.1%未満である、請求項14に記載の方法。
- 前記表面処理プロセスは500mTorr以下の圧力にて行われる、請求項9に記載の方法。
- グラフェン製造のためのシステムであって、該システムは、
複数のガス源と、
複数の質量流量計であって、該複数の質量流量計の各々は前記複数のガス源の1つに結合されている、質量流量計と、
前記複数の質量流量計と流体的に連絡されている処理チャンバと、
前記処理チャンバ中でプラズマを形成するように動作可能なプラズマ源と、
前記処理チャンバと流体的に連絡されている真空ポンプと、
プロセッサと、
複数のコンピュータ可読命令を含む非固定コンピュータ可読記憶媒体であって、前記命令は前記コンピュータ可読記憶媒体に実体的に実装され、データプロセッサにより処理される時にグラフェン製造のために前記複数の命令を提供し、該複数の命令は、
前記データプロセッサに基板を低減された圧力環境に置かせる命令と、
前記データプロセッサにキャリアガスおよび炭素源を供給させる命令と、
前記データプロセッサに前記基板の少なくとも一部を前記キャリアガスおよび前記炭素源に曝させる命令と、
前記データプロセッサに前記基板の前記少なくとも一部に表面処理プロセスを行わせる命令と、
前記データプロセッサに前記基板の前記少なくとも一部上で前記炭素源の一部をグラフェンに変換させる命令とを含む、非固定コンピュータ可読記憶媒体と、
を備えるシステム。 - 前記基板は銅箔を備える、請求項17に記載のシステム。
- 前記キャリアガスは水素を含み、前記表面処理プロセスは高周波水素プラズマ処理プロセスを含む、請求項17に記載のシステム。
- 前記炭素源はメタンを含む、請求項17に記載のシステム。
- 前記キャリアガスの供給および前記炭素源の供給は同時に行われる、請求項17に記載のシステム。
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JP2018074171A (ja) | 2018-05-10 |
SG11201404775RA (en) | 2014-09-26 |
TWI552954B (zh) | 2016-10-11 |
KR102107382B1 (ko) | 2020-05-07 |
EP2817261A4 (en) | 2015-10-28 |
WO2013126671A1 (en) | 2013-08-29 |
CN104136368B (zh) | 2017-02-22 |
US9150418B2 (en) | 2015-10-06 |
JP6562996B2 (ja) | 2019-08-21 |
SG10201607367UA (en) | 2016-10-28 |
EP2817261A1 (en) | 2014-12-31 |
TW201336784A (zh) | 2013-09-16 |
CN106744866A (zh) | 2017-05-31 |
KR20140135725A (ko) | 2014-11-26 |
US20170044018A1 (en) | 2017-02-16 |
CN104136368A (zh) | 2014-11-05 |
CN106744866B (zh) | 2021-01-01 |
US20150368111A1 (en) | 2015-12-24 |
US20140044885A1 (en) | 2014-02-13 |
SG10201908213VA (en) | 2019-10-30 |
JP6262156B2 (ja) | 2018-01-17 |
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