TWI550807B - 接合結構及方法 - Google Patents

接合結構及方法 Download PDF

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Publication number
TWI550807B
TWI550807B TW100121478A TW100121478A TWI550807B TW I550807 B TWI550807 B TW I550807B TW 100121478 A TW100121478 A TW 100121478A TW 100121478 A TW100121478 A TW 100121478A TW I550807 B TWI550807 B TW I550807B
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nanoparticle
preform
preparation
nanoparticles
semiconductor
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TW100121478A
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TW201205764A (en
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舒泰許 克里斯南
翁雲孫
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半導體組件工業公司
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Publication of TW201205764A publication Critical patent/TW201205764A/zh
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Description

接合結構及方法
本發明大體上係關於接合，且更特定言之係關於無鉛接合。
半導體組件製造商正不斷努力增加其產品之效能，同時減少其製造成本。半導體組件製造中之一成本密集區域係封裝含有半導體裝置之半導體晶片。如熟習此項技術者所認知，離散半導體裝置及積體電路係由半導體晶圓製成，該等半導體晶圓接著經單切或切割以產生半導體晶片。典型地，一或多個半導體晶片係使用一焊料晶粒附著材料附著至一支撐基板(諸如金屬引線框)且囊封於一模具化合物中以提供環境及物理應力防護。
使用一焊料晶粒附著材料將一半導體晶片附著至一支撐基板之一缺點在於焊料通常含有可引起環境問題之鉛。另一缺點在於用以引起含鉛焊料流動之熱量係足夠高以熱加壓於半導體組件。
因此，具有減少鉛之使用且降低熱預算之一接合結構及一接合元件之方法將係有利的。對接合結構及接合方法實施為具成本效益及時間效益將係有利的。
本發明大體上提供一種接合結構及一種用於結構之無鉛接合之方法。根據本發明之實施例，一結構(舉例而言，諸如一半導體組件)係藉由提供一奈米粒子製備物及壓實該奈米粒子製備物而製得。該奈米粒子製備物可包括奈米粒子、不同類型的奈米粒子之一混合物、藉由使奈米粒子懸浮於一液體中而獲得之奈米粒子、藉由使不同類型的奈米粒子懸浮於一液體中而獲得之不同類型的奈米粒子之一混合物或類似物。可將該奈米粒子製備物放置或施加至一基板(例如，一模具)以為壓實做準備。可藉由對奈米粒子施加一壓力(其可來自一機械源或一氣動源)而壓實該等奈米粒子且可靜態、動態或靜態及動態地施加該壓力。在壓實之後，可切割該奈米粒子結構或將其形成為所要形狀及大小。或者，可將該奈米粒子製備物於一基板(舉例而言，諸如引線框、印刷電路板、陶瓷基板、層壓塑膠基板、夾子、紙層壓板、塑膠層壓板、半導體晶圓或類似物)上壓實。
自結合隨附圖式之以下詳細描述之閱讀將更佳瞭解本發明，其中相同參考符號指定相同元件。
圖1係圖解闡釋根據本發明之實施例之在製造半導體組件中所使用之用於形成一奈米粒子預製件之一方法之一流程圖10。在圖1之藉由方框12指示之一開始步驟中，將具有一預定義體積或密度之奈米粒子施配於(例如)一鑄模中。適當的奈米粒子包含金屬(舉例而言，諸如呈其金屬形式之銀(Ag)、鋰(Li)、鋁(Al)、鈦(Ti)、鉻(Cr)、錳(Mn)、鈷(Co)、鎳(Ni)、銅(Cu)、鍺(Ge)、釔(Y)、鎘(Cd)、銦(In)、錫(Sn)、銻(Sb)、鑭(La)、鈰(Ce)、鉑(Pt)、金(Au)、鉍(Bi)、鉛(Pb)、鈀(Pd)等)、金屬合金、金屬氧化物、氮化金屬或類似物、塗佈有氧化物之金屬、塗佈有其他金屬之金屬、塗佈有一或多種有機材料之金屬或類似物。較佳地，該等奈米粒子具有小於大致500奈米(nm)之一粒徑。該等奈米粒子用作為一奈米粒子結構之一前驅體。根據替代性實施例，該等奈米粒子可被網版印刷於該模具上、冷凝於該模具上、以類似於射出成型方法之一技術注入模穴、使用熟習此項技術者已知的粒子施配方法施配於該模穴中等。
在將奈米粒子施配或形成於鑄模上之後，藉由施加壓力及熱至該等奈米粒子來壓縮或壓實該等奈米粒子(在圖1中藉由方框14加以指示)。該壓力可為機械產生或氣動產生且可靜態、動態或靜態及動態地予以施加。藉由實例，在小於大約攝氏400度(℃)之一溫度下，所施加的壓力係小於大約20兆帕(MPa)。亦可在(舉例而言)諸如大氣環境、包括惰性氣體之環境、包括真空之環境等之一環境中形成壓實。因此，可經調整以壓實或壓縮奈米粒子之變量包含環境、溫度、壓力、乾燥時間或條件或其等之組合。該等奈米粒子之壓實形成可稱為薄片或膜或小面板之一奈米粒子結構。或者，可藉由施加超音波能量至該等奈米粒子或施加磁脈衝至該等奈米粒子或施加壓力至該等奈米粒子或其等之組合來壓縮或壓實該奈米粒子製備物。
可將奈米粒子薄片單切成具有一所要形狀及大小之預製件(在圖1中藉由方框16指示)。奈米粒子預製件26可被稱為NanoPac且展示於圖4中。
圖2圖解闡釋其中已施配奈米粒子22之一模具20。可將施配奈米粒子22稱為形成奈米粒子22或定位奈米粒子22。在施配奈米粒子22之後，一壓實工具23將一預定義溫度及壓力施加至奈米粒子22以形成一奈米粒子結構24(展示於圖3中)。在圖2中藉由箭頭25指示壓實。如參考圖1所述，奈米粒子結構24係自模具20移除且可單切成具有所要大小及形狀之奈米粒子預製件26(展示於圖4中)。
圖4係其上安裝一奈米粒子預製件26之一基板30之一橫截面視圖。藉由實例，基板30係具有一旗標32及引線框引線34及35之一銅引線框。較佳地，奈米粒子預製件26係安裝至旗標32。奈米粒子預製件26係不限於被安裝至一引線框，而是亦可安裝至其他基板，包含陶瓷基板、印刷電路板、塑膠或類似物。
現參考圖5，一半導體晶片40係安裝至奈米粒子預製件26，該奈米粒子預製件26係(例如)藉由將其放置於一大氣環境、包括一或多種惰性氣體之一環境、包括成形氣體或真空之一環境中並對其施加壓力及熱而燒結。該壓力可由機械產生或氣動產生且可靜態、動態或靜態及動態地予以施加。藉由實例，在小於大約400℃之一溫度下，所施加的壓力係小於大約20 Mpa。
現參考圖6，接合墊44係藉由一導線接合件42耦合至引線框引線34且接合墊45係藉由一接合導線43耦合至引線框引線35。在半導體晶粒40、接合導線42及43、引線框引線34及35以及旗標32之至少一部分之上方形成一保護材料46(舉例而言，諸如一模具化合物)以形成一半導體組件48。亦將接合導線稱為導線接合件。
圖7係根據一實施例之其中一奈米粒子預製件26係安裝至一印刷電路板50之一半導體組件51之一橫截面視圖，該印刷電路板50具有一晶片收納區域52、接合墊54及55、互連件56及57以及接合墊58及59。更特定言之，奈米粒子預製件26係安裝至晶片收納區域52，接合墊54係透過互連件56而耦合至接合墊58，且接合墊55係透過一互連件57而耦合至接合墊59。焊料球60係耦合至接合墊58及59。如熟習此項技術者所認知，一印刷電路板在每一表面上通常具有兩個以上接合墊及自一表面上之一接合墊延伸至一相對表面上之一接合墊之兩個以上電互連件。為完整性起見，將複數個焊料球展示為接合至印刷電路板50之與半導體晶片40所耦合之表面相對之表面上的對應接合墊，亦即，該等焊料球係接合至底面。當焊料球係耦合至底面上之接合墊時，可將結構稱為一球柵格陣列封裝。應注意，可將除了焊料球以外之結構接合至印刷電路板50之底面上之接合墊。例如，可將接針耦合至接合墊(諸如接合墊58及59)以形成一接針柵格陣列。或者，可將接合墊58及59耦合至另一基板。
現參考圖8，奈米粒子預製件26係安裝至一陶瓷基板60且一結構62係安裝於奈米粒子預製件26上且與奈米粒子預製件26接觸。藉由實例，結構62係一半導體晶圓。或者，結構62可為一半導體晶片、另一陶瓷結構、一印刷電路板等。因為奈米粒子預製件26係導電的，所以其可在結構62係一半導體晶片、一半導體晶圓等時用作為至結構62之一背面接觸件。
圖9係圖解闡釋根據本發明之實施例之在製造半導體組件中所使用之用於形成一奈米粒子預製件之一方法之一流程圖80。在一開始步驟82中，將具有一預定義體積或密度之奈米粒子與一液體組合或懸浮於一液體中以形成一奈米粒子懸浮液。已參考圖1描述奈米粒子之適當實例。適當的液體包含酒精、丙酮、有機溶劑或具有低於燒結溫度之一蒸發溫度之液體或類似物。因此，該奈米粒子製備物可包括包含奈米粒子之一有機溶液或包含奈米粒子之一水溶液。該溶液可施配於一模具中、冷凝於一模具中、網版印刷於一基板上或類似物。可將含有該等奈米粒子之溶液稱為一奈米粒子溶液或一奈米粒子懸浮液。藉由實例，該奈米粒子懸浮液係一膠體懸浮液。藉由方框84指示施配該奈米粒子製備物或懸浮液。
又參考圖9，在將該奈米粒子溶液施配於模具中之後，藉由(例如)蒸發分離出或移除該懸浮液之液體或溶劑部分(藉由方框85指示)。因此，該液體用作為該等奈米粒子之一載體。藉由施加壓力及熱至該奈米粒子預製件來壓縮或壓實該等奈米粒子。該壓力可由機械產生或氣動產生且可靜態、動態或靜態及動態地予以施加。藉由實例，在小於大約400℃之一溫度下，所施加的壓力係小於大約20 Mpa。亦可在(舉例而言)諸如大氣環境、包括一惰性氣體之環境、包括真空之環境等之一環境中執行壓實。因此，可經調整以壓實或壓縮該等奈米粒子之變量包含環境、溫度、壓力、乾燥條件或其等之組合。或者，可藉由施加超音波能量至該等奈米粒子或施加磁脈衝至該等奈米粒子或施加壓力至該等奈米粒子或其等之組合來壓縮或壓實該奈米粒子製備物。該等奈米粒子之壓實形成可稱為薄片或膜或小面板之一奈米粒子結構。
可將該奈米粒子薄片單切成具有一所要形狀及大小之奈米粒子預製件26(藉由方框88指示)。
圖10係圖解闡釋根據本發明之實施例之在製造半導體組件中所使用之用於形成一奈米粒子預製件之一方法之一流程圖100。為清楚起見，將一起描述圖10及圖11。在藉由方框102表示之一開始步驟中，將具有一預定義體積或密度之奈米粒子施配於一基板(舉例而言，諸如引線框、印刷電路板、陶瓷基板或類似物)上。已參考圖1描述奈米粒子之適當實例。
在將該等奈米粒子施配於或形成於該基板上之後，藉由施加壓力及熱至該奈米粒子預製件而壓縮或壓實該等奈米粒子(藉由方框104指示)。該壓力可由機械產生或氣動產生且可靜態、動態或靜態及動態地予以施加。藉由實例，在小於大約400℃之一溫度下，所施加的壓力係小於大約20 Mpa。亦可在(舉例而言)諸如大氣環境、包括一惰性氣體之環境、包括真空之環境等之一環境中執行壓實。因此，可經調整以壓實或壓縮該等奈米粒子之變量包含環境、溫度、壓力、乾燥條件或其等之組合。該基板上的奈米粒子之壓實形成類似於奈米粒子預製件26之一奈米粒子預製件26A(展示於圖11中)，惟該奈米粒子預製件26A係形成為該基板上之一預製件而非在施加至該基板之前經單切之一薄片。可將奈米粒子預製件26A稱為NanoPac。
將一工件(舉例而言，諸如一半導體晶片40)安裝至奈米粒子預製件26A使得該工件與奈米粒子預製件26A接觸(藉由方框106表示)。藉由將奈米粒子預製件26A放置於一所要環境中並施加壓力及熱至該奈米粒子預製件來燒結奈米粒子預製件26A。該壓力可由機械產生或氣動產生且可靜態、動態或靜態及動態地予以施加。藉由實例，在小於大約400℃之一溫度下，所施加的壓力係小於大約20 Mpa。燒結奈米粒子預製件26A亦稱為加熱奈米粒子預製件26A且在圖10中藉由方框108表示。應注意，該工件不限於為一半導體晶片。或者，該工件可為電容器(舉例而言，諸如晶片電容器)、電阻器(舉例而言，諸如晶片電阻器)、電感器、引線框、印刷電路板、夾子連接器或類似物。
封裝該基板、半導體晶片40及奈米粒子預製件26A(在圖10中藉由方框110指示)以形成一半導體組件120。圖11圖解闡釋一半導體組件120，其中基板122係(例如)具有一旗標124及引線框引線126及127之一銅引線框，且半導體晶片40係經由奈米粒子預製件26A耦合至引線框122。另外，接合墊44係經由接合導線42耦合至引線框引線126且接合墊45係經由接合導線43耦合至引線框引線127。在引線框122、半導體晶片40及接合導線42及43之至少部分上方形成一模具化合物46。已參考圖6描述半導體晶片40、接合導線42及43及模具化合物46。
圖12圖解闡釋其中基板係一印刷電路板130之一半導體組件129之一實施例。在圖12中展示具有透過一奈米粒子預製件26A耦合至一半導體晶片收納區域132之一半導體晶片40之印刷電路板130。半導體晶片40上之接合墊44及45係分別經由接合導線42及43而耦合至印刷電路板130上之接合墊134及135。接合墊134及135係分別藉由互連件138及139而耦合至接合墊136及137。焊料凸塊140係分別耦合至對應接合墊136及137。如熟習此項技術者所認知，一印刷電路板在每一表面上通常具有兩個以上接合墊及自一表面上之一接合墊延伸至一相對表面上之一接合墊之兩個以上電互連件。為完整性起見，在印刷電路板130之底面上展示兩個以上接合墊且將複數個焊料球140展示為接合至印刷電路板130之底面上之對應接合墊。可將此結構稱為一球柵格陣列。應注意，可將除了焊料球以外之結構接合至印刷電路板130之底面上之接合墊。例如，可將接針耦合至接合墊(諸如，接合墊136及137)以形成一接針柵格陣列結構。或者，可將接合墊136及137耦合至另一基板。應注意，半導體晶片40上之接合墊數目、印刷電路板130上之接合墊數目、接合導線數目及互連件以及焊料球之數目並非本發明之限制。
在印刷電路板130、半導體晶片40及接合導線42及43之至少一部分之上方形成一模具化合物46。已參考圖6描述半導體晶片40、接合導線42及43及模具化合物46。
圖13係包括一基板152之一結構150之一橫截面視圖，該基板152具有透過一奈米粒子預製件26A而耦合至該基板152之一工件154。應注意，該預製件不限於為預製件26A，而是亦可為一預製件26、26B或類似物。藉由實例，基板152係一陶瓷基板。工件154可為一半導體晶片(舉例而言，諸如晶片40)、一印刷電路板(舉例而言，諸如印刷電路板130)、一半導體晶圓、另一陶瓷材料件或類似物。
圖14係圖解闡釋根據本發明之實施例之在製造半導體組件中所使用之用於形成一奈米粒子預製件之一方法之一流程圖175。為清楚起見，將一起描述圖14至圖17。另外，流程圖175圖解闡釋用於製造半導體組件之一方法之實施例。在藉由方框176表示之一開始步驟中，藉由使奈米粒子與一溶劑組合而製備一奈米粒子懸浮液。已參考圖1描述奈米粒子之適當實例。適當的液體包含酒精、丙酮或具有低於燒結溫度之一蒸發溫度之液體或類似物。藉由實例，該奈米粒子懸浮液係一膠體懸浮液。
如藉由方框178所指示，將奈米粒子懸浮液190(展示在圖15中)施配於(舉例而言)諸如一引線框122(展示在圖15中)、一印刷電路板130(展示在圖17中)、一陶瓷基板或類似物之一基板上。
在將奈米粒子懸浮液190施配於或形成於該基板上之後，藉由施加壓力及熱至奈米粒子預製件而分離出或移除溶劑(在圖14中藉由方框180指示)。該壓力可由機械產生或氣動產生且可靜態、動態或靜態及動態地予以施加。藉由實例，在小於大約400℃之一溫度下，所施加的壓力係小於大約20 Mpa。在圖15中藉由箭頭192指示分離出溶劑。
在已分離出溶劑之後，藉由施加壓力及熱至該奈米粒子預製件而壓縮或壓實該等奈米粒子(在圖14中藉由方框182指示)。該壓力可由機械產生或氣動產生且可靜態、動態或靜態及動態地予以施加。藉由實例，在小於大約400℃之一溫度下，所施加的壓力係小於大約20 Mpa。亦可在(舉例而言)諸如大氣環境、包括一惰性氣體之環境、包括真空之環境等之一環境中執行壓實。因此，可經調整以壓實或壓縮該等奈米粒子之變量包含環境、溫度、壓力、乾燥條件或其等之組合。該基板上的奈米粒子之壓實形成類似於奈米粒子預製件26之一奈米粒子預製件26B(展示於圖16中)，惟該奈米粒子預製件26B係由一懸浮液形成除外。可將奈米粒子預製件26B稱為NanoPac。
將一工件(舉例而言，諸如一半導體晶片40)安裝至奈米粒子預製件26B(在圖14中藉由方框184指示)。藉由將奈米粒子預製件放置於一環境中並對奈米粒子預製件施加壓力及熱來燒結奈米粒子預製件26B。該壓力可由機械產生或氣動產生且可靜態、動態或靜態及動態地予以施加。藉由實例，在小於大約400℃之一溫度下，所施加的壓力係小於大約20 Mpa。燒結奈米粒子預製件26B亦稱為加熱奈米粒子預製件26B且在圖14中藉由方框186指示。將包括基板、半導體晶片40及奈米粒子預製件26B之結構浸潤於一溶劑中以移除可能存在之一有機鈍化層。在移除該有機鈍化層之後，使該結構在大氣環境中乾燥。或者，可使該結構在包括一或多種惰性氣體之一環境中或在真空下乾燥。應注意，該工件不限於為一半導體晶片。或者，該工具可為電容器(舉例而言，諸如晶片電容器)、電阻器(舉例而言，諸如晶片電阻器)、電感器、引線框、印刷電路板、夾子連接器或類似物。
可封裝該基板、半導體晶片40及奈米粒子預製件26B以形成一半導體組件196(在圖14中藉由方框188指示)。圖16圖解闡釋一半導體組件196，其中基板122係(例如)具有一旗標124及引線框引線126及127之一銅引線框，且半導體晶片40係經由奈米粒子預製件26B耦合至引線框122。另外，形成於半導體晶片40上或來自半導體晶片40之接合墊44及45係分別經由對應接合導線42及43而耦合至引線框引線126及127。在引線框122、半導體晶片40及接合導線42及43之至少部分上方形成一模具化合物46。已參考圖6描述半導體晶片40、接合導線42及43及模具化合物46。
圖17及圖18圖解闡釋根據一實施例之其中基板係一印刷電路板130之一半導體組件200。參考圖12描述印刷電路板130之一實施例。在圖17中展示施配於印刷電路板130上之奈米粒子懸浮液190。藉由施加壓力及熱至該奈米粒子懸浮液而分離出或移除溶劑(藉由箭頭192指示)。該壓力可由機械產生或氣動產生且可靜態、動態或靜態及動態地予以施加。藉由實例，在小於大約400℃之一溫度下，所施加的壓力係小於大約20 Mpa(如藉由方框180所指示)以形成奈米粒子預製件26B。因此，在一半導體晶片收納區域132上形成奈米粒子預製件26B。
焊料凸塊140係分別耦合至對應接合墊136及137。應注意，接合墊134及135以及接合墊136及137係定位於印刷電路板130之相對側上。半導體晶片40上之接合墊44及45係分別經由接合導線42及43而耦合至接合墊134及135。應進一步注意，半導體晶片40上之接合墊、印刷電路板130上之接合墊、接合導線、互連件及焊料球之數目並非本發明之限制。已參考圖12描述關於印刷電路板130之接合墊、接合導線、互連件及焊料凸塊之形成。
在印刷電路板130、半導體晶片40及接合導線42及43之至少一部分之上方形成一模具化合物46。已參考圖6描述半導體晶片40、接合導線42及43及模具化合物46。
圖19係根據另一實施例之一半導體組件210之一橫截面視圖。在圖19中展示具有接合墊216、218、220及222形成於其上之一表面214之一印刷電路板212。在接合墊216至222上形成奈米粒子預製件26。該等奈米粒子預製件不限於預製件26，而是可為(舉例而言)諸如預製件26A、26B或類似物之預製件。一半導體組件226係耦合至接合墊220及222。半導體組件226可為一封裝半導體組件或其可為安裝於一覆晶或晶片級封裝組態中之一半導體晶片。一被動組件228係透過奈米粒子預製件26而耦合至接合墊216及218。藉由實例，被動組件228係一晶片電容器。或者，被動組件228可為一晶片電阻器、一電阻器、一電容器、一電感器等。印刷電路板212包含透過一互連件232耦合至接合墊218及220之一接合墊230及透過一互連件236耦合至接合墊222之一接合墊234。儘管圖式中未展示，然半導體組件210可包含形成於半導體組件226上方之一保護結構、被動組件228或該兩者且其可包含耦合至接合墊230及234之焊料凸塊。
圖20係根據本發明之另一實施例之一表面安裝半導體組件250之一橫截面視圖。在圖20中展示具有一旗標254及引線框引線256及258之一引線框252之一部分之一橫截面視圖。亦可將旗標254稱為一晶片收納區域。在旗標254上形成一奈米粒子預製件26。該奈米粒子預製件不限於預製件26，但可為(舉例而言)諸如預製件26A、26B或類似物之一預製件。將具有接合墊262及264之一半導體晶片260安裝至奈米粒子預製件26，該奈米粒子預製件26係藉由(例如)將奈米粒子預製件26放置於一大氣環境、包括一或多種惰性氣體之一環境、包括一成形氣體或真空之一環境中並且施加壓力及熱至該奈米粒子預製件而燒結。該壓力可由機械產生或氣動產生且可靜態、動態或靜態及動態地予以施加。藉由實例，在小於大約400℃之一溫度下，所施加的壓力係小於大約20 Mpa。
又參考圖20，接合墊262係藉由一導線接合件266耦合至引線框引線256且接合墊264係藉由一導線接合件268耦合至引線框引線258。在半導體晶粒260、接合導線266及268、引線框引線256及258以及旗標254上方形成一保護材料270(舉例而言，諸如一模具化合物)，以形成表面安裝半導體組件250。亦將接合導線稱為導線接合件。應注意，表面安裝半導體組件250可為一小外形封裝、一晶片載體、一無引線晶片載體、一塑膠無引線晶片載體等。
圖21係根據本發明之另一實施例之一半導體組件300之一橫截面視圖。在圖21中展示具有一旗標304及一引線框引線306之一引線框302之一部分之一橫截面視圖。亦可將旗標304稱為一晶片收納區域。在旗標304上形成一奈米粒子預製件26。該奈米粒子預製件不限於預製件26，而是可為(舉例而言)諸如預製件26A、26B或類似物之一預製件。將具有表面312及314之一半導體晶片310安裝至奈米粒子預製件26。更特定言之，表面312係放置成與奈米粒子預製件26接觸。在半導體晶片310之表面314上形成另一奈米粒子預製件26。在奈米粒子預製件26上安裝一夾子318。應注意，該夾子318具有區域320及322且該區域320係安裝至奈米粒子預製件26且區域322可藉由焊料(圖式中未展示)接合至引線框引線306。奈米粒子預製件26係藉由(例如)將奈米粒子預製件放置於一大氣環境、包括一或多種惰性氣體之一環境、包括一成形氣體或真空之一環境中或使用該等環境處理該奈米粒子預製件並且施加壓力及熱至該奈米粒子預製件而燒結。該壓力可由機械產生或氣動產生且可靜態、動態或靜態及動態地予以施加。藉由實例，在小於大約400℃之一溫度下，所施加的壓力係小於大約20 Mpa。
在半導體晶粒310、旗標304、夾子318及引線框引線306之一部分的上方形成一保護材料326(舉例而言，諸如一模具化合物)。
儘管在本文中已揭示特定實施例，然不希望本發明限於所揭示之實施例。熟習此項技術者將認知，在不偏離本發明精神之情況下，可作出修改及變動。希望本發明包含如落於隨附申請專利範圍之範疇中之所有此等修改及變動。
20．．．模具
22．．．奈米粒子
23．．．壓實工具
24．．．奈米粒子結構
25．．．箭頭
26．．．奈米粒子預製件
26A．．．奈米粒子預製件
26B．．．奈米粒子預製件
30．．．基板
32．．．旗標
34．．．引線框引線
35．．．引線框引線
40．．．半導體晶片/半導體晶粒
42．．．導線接合件/接合導線
43．．．導線接合件/接合導線
44．．．接合墊
45．．．接合墊
46．．．保護材料/模具化合物
48．．．半導體組件
50．．．印刷電路板
51．．．半導體組件
52．．．晶片收納區域
54．．．接合墊
55．．．接合墊
56．．．互連件
57．．．互連件
58．．．接合墊
59．．．接合墊
60．．．焊料球(圖7)/陶瓷基板(圖8)
62．．．結構
120．．．半導體組件
122．．．基板/引線框
124．．．旗標
126．．．引線框引線
127．．．引線框引線
129．．．半導體組件
130．．．印刷電路板
132．．．半導體晶片收納區域
134．．．接合墊
135．．．接合墊
136．．．接合墊
137．．．接合墊
138．．．互連件
139．．．互連件
140．．．焊料凸塊
150．．．結構
152．．．基板
154．．．工件
190．．．奈米粒子懸浮液
192．．．箭頭
196．．．半導體組件
200．．．半導體組件
210．．．半導體組件
212．．．印刷電路板
214．．．印刷電路板之表面
216．．．接合墊
218．．．接合墊
220．．．接合墊
222．．．接合墊
226．．．半導體組件
228．．．被動組件
230．．．接合墊
232．．．互連件
234．．．接合墊
236．．．互連件
250．．．表面安裝半導體組件
252．．．引線框
254．．．旗標
256．．．引線框引線
258．．．引線框引線
260．．．半導體晶片/半導體晶粒
262．．．接合墊
264．．．接合墊
266．．．導線接合件/接合導線
268．．．導線接合件/接合導線
270．．．保護材料
300．．．半導體組件
302．．．引線框
304．．．旗標
306．．．引線框引線
310．．．半導體晶片/半導體晶粒
312．．．半導體晶片之表面
314．．．半導體晶片之表面
318．．．夾子
320．．．夾子之區域
322．．．夾子之區域
326．．．保護材料
圖1係圖解闡釋根據本發明之實施例之用於形成一奈米粒子預製件之一方法之一流程圖；
圖2係根據本發明之實施例之其中施配一奈米粒子製備物之一模具；
圖3係根據本發明之實施例之圖2之在處理該等奈米粒子之後之模具；
圖4係根據本發明之一實施例之在製造期間之一半導體組件之一橫截面視圖；
圖5係圖4之在一隨後製造階段之半導體組件之一橫截面視圖；
圖6係圖5之在一隨後製造階段之半導體組件之一橫截面視圖；
圖7係根據本發明之另一實施例之在製造期間之一半導體組件之一橫截面視圖；
圖8係根據本發明之另一實施例之在製造期間之一半導體組件之一橫截面視圖；
圖9係圖解闡釋根據本發明之實施例之用於製造一半導體組件之一方法之一流程圖；
圖10係圖解闡釋根據本發明之實施例之用於製造一半導體組件之一方法之一流程圖；
圖11係根據本發明之一實施例之在製造期間之一半導體組件之一橫截面視圖；
圖12係根據本發明之一實施例之在製造期間之一半導體組件之一橫截面視圖；
圖13係根據本發明之一實施例之在製造期間之一半導體組件之-橫截面視圖；
圖14係圖解闡釋根據本發明之實施例之用於製造一半導體組件之一方法之一流程圖；
圖15係根據本發明之一實施例之在製造期間之一半導體組件之一橫截面視圖；
圖16係圖15之在一隨後製造階段之半導體組件之一橫截面視圖；
圖17係根據本發明之一實施例之在製造期間之一半導體組件之一橫截面視圖；
圖18係圖17之在一隨後製造階段之半導體組件之一橫截面視圖；
圖19係根據本發明之另一實施例之一半導體組件之一橫截面視圖；
圖20係根據本發明之另一實施例之一半導體組件之一橫截面視圖；及
圖21係根據本發明之另一實施例之一半導體組件之一橫截面視圖。
(無元件符號說明)

Claims (10)

  1. 一種接合組件之方法，其包括：使用不具燒結(sintering)的一程序來提供一奈米粒子製備物；及壓實該奈米粒子製備物，其中提供該奈米粒子製備物包含將該奈米粒子製備物提供為一奈米粒子懸浮液，且進一步包含將該奈米粒子懸浮液施加至一基板並自該奈米粒子懸浮液分離出該溶劑，且其中在不具燒結之下壓實該奈米粒子製備物形成一奈米粒子結構。
  2. 如請求項1之方法，其中提供該奈米粒子製備物包含使奈米粒子懸浮於一液體中。
  3. 如請求項2之方法，其中使該等奈米粒子懸浮於該液體中包含使該等奈米粒子懸浮於一有機溶劑中或使該等奈米粒子懸浮於一水溶液中。
  4. 如請求項1之方法，其中該奈米粒子製備物包括奈米粒子，且其中壓實該奈米粒子製備物形成一奈米粒子結構，且進一步包含將該奈米粒子結構安裝至一基板並且將一半導體晶片安裝至該奈米結構。
  5. 如請求項1之方法，其中壓實該奈米粒子製備物包括施加一壓力至該奈米粒子製備物。
  6. 如請求項1之方法，其中施加壓力至該奈米粒子製備物包含施加機械壓力或氣動壓力，且其中壓實該奈米粒子製備物包含施加超音波能量至該奈米粒子製備物。
  7. 如請求項1之方法，其中提供該奈米粒子製備物包含將 該奈米粒子製備物提供為一奈米粒子懸浮液，且進一步包含將該奈米粒子懸浮液施加至一基板並自該奈米粒子懸浮液分離出該溶劑，且其中壓實該奈米粒子製備物形成一奈米粒子結構。
  8. 一種組件，其包括：一支撐結構，其具有一表面；及一奈米粒子預製件，其係設置於該支撐結構上，其中該奈米粒子預製件包括自一前驅體獲得之一材料，該前驅體包括銀粒子且使用不具燒結的一程序來形成該奈米粒子預製件。
  9. 如請求項8之組件，其中該支撐結構係一引線框旗標或一印刷電路板。
  10. 如請求項8之組件，其中該奈米粒子預製件包括自包括銀粒子之一前驅體獲得之材料。
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