TWI550807B - 接合結構及方法 - Google Patents

接合結構及方法 Download PDF

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Publication number
TWI550807B
TWI550807B TW100121478A TW100121478A TWI550807B TW I550807 B TWI550807 B TW I550807B TW 100121478 A TW100121478 A TW 100121478A TW 100121478 A TW100121478 A TW 100121478A TW I550807 B TWI550807 B TW I550807B
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nanoparticle
preform
preparation
nanoparticles
semiconductor
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TW100121478A
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TW201205764A (en
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舒泰許 克里斯南
翁雲孫
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半導體組件工業公司
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    • H10W70/40—Leadframes
    • H10W70/411—Chip-supporting parts, e.g. die pads
    • H10W70/417—Bonding materials between chips and die pads
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    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
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    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
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    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
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    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01321—Manufacture or treatment of die-attach connectors using local deposition
    • H10W72/01323—Manufacture or treatment of die-attach connectors using local deposition in liquid form, e.g. by dispensing droplets or by screen printing
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    • H10W72/01325—Manufacture or treatment of die-attach connectors using local deposition in solid form
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    • H10W72/07311—Treating the bonding area before connecting, e.g. by applying flux or cleaning
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    • H10W72/07332—Compression bonding, e.g. thermocompression bonding
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    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07352—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in structures or sizes
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    • H10W72/07354—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in dispositions
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    • H10W72/07631—Techniques
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/076—Connecting or disconnecting of strap connectors
    • H10W72/07631—Techniques
    • H10W72/07632—Compression bonding, e.g. thermocompression bonding
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    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
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    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
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    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
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    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
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    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
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    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
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    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
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    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/766—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
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    • H10W99/00—Subject matter not provided for in other groups of this subclass

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  • Die Bonding (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Powder Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
TW100121478A 2010-07-21 2011-06-20 接合結構及方法 TWI550807B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MYPI2010003445A MY160373A (en) 2010-07-21 2010-07-21 Bonding structure and method

Publications (2)

Publication Number Publication Date
TW201205764A TW201205764A (en) 2012-02-01
TWI550807B true TWI550807B (zh) 2016-09-21

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ID=45496354

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TW100121478A TWI550807B (zh) 2010-07-21 2011-06-20 接合結構及方法

Country Status (5)

Country Link
US (2) US20120018864A1 (https=)
JP (2) JP5882618B2 (https=)
CN (1) CN102347252B (https=)
MY (1) MY160373A (https=)
TW (1) TWI550807B (https=)

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WO2014091517A1 (ja) * 2012-12-10 2014-06-19 株式会社ニッシン 接合方法
JP6245933B2 (ja) * 2013-10-17 2017-12-13 Ｄｏｗａエレクトロニクス株式会社 接合用銀シートおよびその製造方法並びに電子部品接合方法
JP6415381B2 (ja) 2015-04-30 2018-10-31 三菱電機株式会社 半導体装置の製造方法
US9576922B2 (en) * 2015-05-04 2017-02-21 Globalfoundries Inc. Silver alloying post-chip join
US9881895B2 (en) * 2015-08-18 2018-01-30 Lockheed Martin Corporation Wire bonding methods and systems incorporating metal nanoparticles
US20170309549A1 (en) * 2016-04-21 2017-10-26 Texas Instruments Incorporated Sintered Metal Flip Chip Joints
JP6763708B2 (ja) * 2016-06-30 2020-09-30 大陽日酸株式会社 接合材、接合材の製造方法、及び接合体
US10347507B2 (en) 2017-09-29 2019-07-09 Lg Innotek Co., Ltd. Printed circuit board
KR102531762B1 (ko) 2017-09-29 2023-05-12 엘지이노텍 주식회사 인쇄회로기판 및 이의 제조 방법
DE102018128748A1 (de) * 2018-11-15 2020-05-20 Infineon Technologies Ag Verfahren zur herstellung einer halbleitervorrichtung mit einerpastenschicht und halbleitervorrichtung
US10914018B2 (en) * 2019-03-12 2021-02-09 Infineon Technologies Ag Porous Cu on Cu surface for semiconductor packages

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