CN102347252B - 键合结构和方法 - Google Patents

键合结构和方法 Download PDF

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Publication number
CN102347252B
CN102347252B CN201110187482.2A CN201110187482A CN102347252B CN 102347252 B CN102347252 B CN 102347252B CN 201110187482 A CN201110187482 A CN 201110187482A CN 102347252 B CN102347252 B CN 102347252B
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metal nanoparticle
nanoparticle
preform
nanoparticles
semiconductor
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CN102347252A (zh
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S·克里南
元尹充
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Semiconductor Components Industries LLC
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Semiconductor Components Industries LLC
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  • Die Bonding (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Powder Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
CN201110187482.2A 2010-07-21 2011-07-06 键合结构和方法 Active CN102347252B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
MYPI2010003445A MY160373A (en) 2010-07-21 2010-07-21 Bonding structure and method
MYPI2010003445 2010-07-21

Publications (2)

Publication Number Publication Date
CN102347252A CN102347252A (zh) 2012-02-08
CN102347252B true CN102347252B (zh) 2017-04-12

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US (2) US20120018864A1 (https=)
JP (2) JP5882618B2 (https=)
CN (1) CN102347252B (https=)
MY (1) MY160373A (https=)
TW (1) TWI550807B (https=)

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JP6245933B2 (ja) * 2013-10-17 2017-12-13 Ｄｏｗａエレクトロニクス株式会社 接合用銀シートおよびその製造方法並びに電子部品接合方法
JP6415381B2 (ja) 2015-04-30 2018-10-31 三菱電機株式会社 半導体装置の製造方法
US9576922B2 (en) * 2015-05-04 2017-02-21 Globalfoundries Inc. Silver alloying post-chip join
US9881895B2 (en) * 2015-08-18 2018-01-30 Lockheed Martin Corporation Wire bonding methods and systems incorporating metal nanoparticles
US20170309549A1 (en) * 2016-04-21 2017-10-26 Texas Instruments Incorporated Sintered Metal Flip Chip Joints
JP6763708B2 (ja) * 2016-06-30 2020-09-30 大陽日酸株式会社 接合材、接合材の製造方法、及び接合体
US10347507B2 (en) 2017-09-29 2019-07-09 Lg Innotek Co., Ltd. Printed circuit board
KR102531762B1 (ko) 2017-09-29 2023-05-12 엘지이노텍 주식회사 인쇄회로기판 및 이의 제조 방법
DE102018128748A1 (de) * 2018-11-15 2020-05-20 Infineon Technologies Ag Verfahren zur herstellung einer halbleitervorrichtung mit einerpastenschicht und halbleitervorrichtung
US10914018B2 (en) * 2019-03-12 2021-02-09 Infineon Technologies Ag Porous Cu on Cu surface for semiconductor packages

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