TWI547573B - 氧化物燒結體、濺鍍用靶、及使用其而獲得之氧化物半導體薄膜 - Google Patents

氧化物燒結體、濺鍍用靶、及使用其而獲得之氧化物半導體薄膜 Download PDF

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TWI547573B
TWI547573B TW104105274A TW104105274A TWI547573B TW I547573 B TWI547573 B TW I547573B TW 104105274 A TW104105274 A TW 104105274A TW 104105274 A TW104105274 A TW 104105274A TW I547573 B TWI547573 B TW I547573B
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phase
oxide
sintered body
less
gaino
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TW104105274A
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TW201536938A (zh
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中山德行
西村英一郎
松村文彦
井藁正史
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住友金屬礦山股份有限公司
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    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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  • Chemical & Material Sciences (AREA)
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  • Organic Chemistry (AREA)
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  • Mechanical Engineering (AREA)
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  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Thin Film Transistor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
TW104105274A 2014-02-27 2015-02-16 氧化物燒結體、濺鍍用靶、及使用其而獲得之氧化物半導體薄膜 TWI547573B (zh)

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Application Number Priority Date Filing Date Title
JP2014037022 2014-02-27
JP2014163148 2014-08-08
JP2014263621A JP6358083B2 (ja) 2014-02-27 2014-12-25 酸化物焼結体、スパッタリング用ターゲット、及びそれを用いて得られる酸化物半導体薄膜

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TW201536938A TW201536938A (zh) 2015-10-01
TWI547573B true TWI547573B (zh) 2016-09-01

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US (1) US9670577B2 (https=)
JP (1) JP6358083B2 (https=)
KR (1) KR102353562B1 (https=)
CN (1) CN106029604B (https=)
TW (1) TWI547573B (https=)
WO (1) WO2015129468A1 (https=)

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JP6358329B2 (ja) * 2014-04-17 2018-07-18 住友金属鉱山株式会社 酸化物焼結体、スパッタリング用ターゲット、及びそれを用いて得られる酸化物半導体薄膜
JP6724057B2 (ja) * 2018-03-30 2020-07-15 Ｊｘ金属株式会社 スパッタリングターゲット部材
JP7247546B2 (ja) * 2018-11-26 2023-03-29 日新電機株式会社 薄膜トランジスタの製造方法
CN118495925A (zh) * 2024-05-10 2024-08-16 南京先锋材料科技有限公司 高电子迁移率氧化物igzo溅射靶材的制备工艺、靶材及应用

Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2011252231A (ja) * 2001-08-02 2011-12-15 Idemitsu Kosan Co Ltd スパッタリングターゲット、透明導電膜およびそれらの製造法
TW201402852A (zh) * 2008-06-06 2014-01-16 出光興產股份有限公司 氧化物薄膜用濺鍍靶及其製造方法

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