KR102353562B1 - 산화물 소결체, 스퍼터링용 타겟, 및 그것을 이용하여 얻어지는 산화물 반도체 박막 - Google Patents

산화물 소결체, 스퍼터링용 타겟, 및 그것을 이용하여 얻어지는 산화물 반도체 박막 Download PDF

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KR102353562B1
KR102353562B1 KR1020167022418A KR20167022418A KR102353562B1 KR 102353562 B1 KR102353562 B1 KR 102353562B1 KR 1020167022418 A KR1020167022418 A KR 1020167022418A KR 20167022418 A KR20167022418 A KR 20167022418A KR 102353562 B1 KR102353562 B1 KR 102353562B1
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thin film
oxide
less
gaino
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KR20160127732A (ko
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도쿠유키 나카야마
에이이치로 니시무라
후미히코 마츠무라
마사시 이와라
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미쓰이금속광업주식회사
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    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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  • Thin Film Transistor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1020167022418A 2014-02-27 2015-02-12 산화물 소결체, 스퍼터링용 타겟, 및 그것을 이용하여 얻어지는 산화물 반도체 박막 Active KR102353562B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JPJP-P-2014-037022 2014-02-27
JP2014037022 2014-02-27
JPJP-P-2014-163148 2014-08-08
JP2014163148 2014-08-08
JPJP-P-2014-263621 2014-12-25
JP2014263621A JP6358083B2 (ja) 2014-02-27 2014-12-25 酸化物焼結体、スパッタリング用ターゲット、及びそれを用いて得られる酸化物半導体薄膜
PCT/JP2015/053848 WO2015129468A1 (ja) 2014-02-27 2015-02-12 酸化物焼結体、スパッタリング用ターゲット、及びそれを用いて得られる酸化物半導体薄膜

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KR20160127732A KR20160127732A (ko) 2016-11-04
KR102353562B1 true KR102353562B1 (ko) 2022-01-20

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US (1) US9670577B2 (https=)
JP (1) JP6358083B2 (https=)
KR (1) KR102353562B1 (https=)
CN (1) CN106029604B (https=)
TW (1) TWI547573B (https=)
WO (1) WO2015129468A1 (https=)

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