JP6414210B2 - 酸化物焼結体、スパッタリング用ターゲット、及びそれを用いて得られる酸化物半導体薄膜 - Google Patents
酸化物焼結体、スパッタリング用ターゲット、及びそれを用いて得られる酸化物半導体薄膜 Download PDFInfo
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- JP6414210B2 JP6414210B2 JP2016521135A JP2016521135A JP6414210B2 JP 6414210 B2 JP6414210 B2 JP 6414210B2 JP 2016521135 A JP2016521135 A JP 2016521135A JP 2016521135 A JP2016521135 A JP 2016521135A JP 6414210 B2 JP6414210 B2 JP 6414210B2
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- 239000010409 thin film Substances 0.000 title claims description 73
- 239000004065 semiconductor Substances 0.000 title claims description 47
- 238000005477 sputtering target Methods 0.000 title claims description 19
- 239000011777 magnesium Substances 0.000 claims description 67
- 229910052733 gallium Inorganic materials 0.000 claims description 56
- 229910052738 indium Inorganic materials 0.000 claims description 39
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 38
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 37
- 229910052749 magnesium Inorganic materials 0.000 claims description 34
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 33
- 238000004544 sputter deposition Methods 0.000 claims description 29
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000002441 X-ray diffraction Methods 0.000 claims description 8
- 229910017857 MgGa Inorganic materials 0.000 claims description 7
- 229910017976 MgO 4 Inorganic materials 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 239000012071 phase Substances 0.000 description 119
- 239000010408 film Substances 0.000 description 33
- 239000000843 powder Substances 0.000 description 31
- 238000005245 sintering Methods 0.000 description 31
- 229910052760 oxygen Inorganic materials 0.000 description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 21
- 239000001301 oxygen Substances 0.000 description 21
- 230000015572 biosynthetic process Effects 0.000 description 20
- 238000010438 heat treatment Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 14
- 239000002994 raw material Substances 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 12
- 238000011156 evaluation Methods 0.000 description 11
- 239000000203 mixture Substances 0.000 description 11
- 238000002425 crystallisation Methods 0.000 description 9
- 230000008025 crystallization Effects 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 229910003437 indium oxide Inorganic materials 0.000 description 9
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000002156 mixing Methods 0.000 description 7
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 5
- 229910001195 gallium oxide Inorganic materials 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000395 magnesium oxide Substances 0.000 description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000004993 emission spectroscopy Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 230000005355 Hall effect Effects 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 230000008520 organization Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 108091006149 Electron carriers Proteins 0.000 description 1
- 229910017911 MgIn Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- -1 argon and oxygen Chemical compound 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000009694 cold isostatic pressing Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
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Description
100×I[GaInO3相(111)]/{I[In2O3相(400)]+I[GaInO3相(111)]} [%]・・・・式1
本発明の酸化物焼結体は、ビックスバイト型構造のIn2O3相と、In2O3相以外の生成相としてβ−Ga2O3型構造のGaInO3相、あるいはβ−Ga2O3型構造のGaInO3相と(Ga,In)2O3相によって構成される。酸化物焼結体がIn2O3相のみによって構成されると、Mgの含有に関係なく、例えば特許文献3(WO2003/014409号公報)の比較例11と同様にノジュールが発生する。一方、In(GaMg)O4相、MgGa2O4相およびIn2MgO4相は、いずれも高抵抗相であるため、アーキングやノジュールの発生原因となる。In2MgO4相は、比抵抗が10−2Ω・cm程度(非特許文献1)でIn2O3相やGaInO3相と比較して1〜2桁程度電気抵抗が高いため、スパッタリング成膜で掘れ残りやすくノジュールが発生しやすい。In(GaMg)O4相は、比抵抗が100Ω・cm程度とより高く(非特許文献2)、ノジュール発生の原因となる。MgGa2O4相はInを含まないためさらに比抵抗が高く、アーキング発生の原因となる。また、これらの相が生成した酸化物焼結体を用いてスパッタリング成膜された酸化物半導体薄膜は、キャリア移動度が低くなる傾向にある。
(式中、I[In2O3相(400)]は、ビックスバイト型構造のIn2O3相の(400)ピーク強度であり、I[GaInO3相(111)]は、β−Ga2O3型構造の複合酸化物β−GaInO3相(111)ピーク強度を示す。)
本発明の酸化物焼結体は、酸化インジウム粉末と酸化ガリウム粉末からなる酸化物粉末、ならびに酸化マグネシウム粉末を原料粉末とする。
本発明のターゲットは、上記酸化物焼結体を所定の大きさに切断、表面を研磨加工し、バッキングプレートに接着して得ることができる。ターゲット形状は、平板形が好ましいが、円筒形でもよい。円筒形ターゲットを用いる場合には、ターゲット回転によるパーティクル発生を抑制することが好ましい。
本発明の非晶質の酸化物半導体薄膜は、前記のスパッタリング用ターゲットを用いて、スパッタリング法で基板上に一旦非晶質の薄膜を形成し、次いで熱処理を施すことによって得られる。
得られた酸化物焼結体の金属元素の組成をICP発光分光法によって調べた。得られた酸化物焼結体の端材を用いて、X線回折装置(フィリップス製)を用いて粉末法による生成相の同定を行った。
得られた酸化物薄膜の組成をICP発光分光法によって調べた。酸化物薄膜の膜厚は表面粗さ計(テンコール社製)で測定した。成膜速度は、膜厚と成膜時間から算出した。酸化物薄膜のキャリア濃度およびキャリア移動度は、ホール効果測定装置(東陽テクニカ製)によって求めた。膜の生成相はX線回折測定によって同定した。
酸化インジウム粉末と酸化ガリウム粉末、ならびに酸化マグネシウム粉末を平均粒径1.5μm以下となるよう調整して原料粉末とした。これらの原料粉末を、表1及び表2の実施例及び比較例のGa/(In+Ga)原子数比、Mg/(In+Ga+Mg)原子数比の通りになるように調合し、水とともに樹脂製ポットに入れ、湿式ボールミルで混合した。この際、硬質ZrO2ボールを用い、混合時間を18時間とした。混合後、スラリーを取り出し、濾過、乾燥、造粒した。造粒物を、冷間静水圧プレスで3ton/cm2の圧力をかけて成形した。
実施例及び比較例のスパッタリング用ターゲットならびに無アルカリのガラス基板(コーニング製EagleXG)を用いて、基板加熱せずに室温で直流スパッタリングによる成膜を行った。アーキング抑制機能のない直流電源を装備した直流マグネトロンスパッタリング装置(トッキ製)のカソードに、上記スパッタリングターゲットを取り付けた。このときターゲット−基板(ホルダー)間距離を60mmに固定した。1×10−4Pa以下まで真空排気後、アルゴンと酸素の混合ガスを各ターゲットのガリウム量に応じて適当な酸素の比率になるように導入し、ガス圧を0.6Paに調整した。直流電力300W(1.64W/cm2)を印加して直流プラズマを発生させた。10分間のプリスパッタリング後、スパッタリングターゲットの直上、すなわち静止対向位置に基板を配置して、膜厚50nmの酸化物薄膜を形成した。得られた酸化物薄膜の組成は、ターゲットとほぼ同じであることが確認された。また、X線回折測定の結果、非晶質であることが確認された。得られた非晶質の酸化物薄膜には、RTA(Rapid Thermal Annealing)装置を用いて、大気中、250〜400℃において30分間以内の熱処理を施した。熱処理後の酸化物薄膜は、X線回折測定の結果、非晶質であることが確認され、In2O3(111)を主ピークとしていた。得られた非晶質の酸化物半導体薄膜のホール効果測定を行い、キャリア濃度およびキャリア移動度を求めた。得られた評価結果を、表2にまとめて記載した。
実施例2、10及び比較例2のスパッタリング用ターゲットについて、量産を模擬したスパッタリング成膜によるノジュール発生の評価を実施した。スパッタリング装置は、アーキング抑制機能のない直流電源を装備したロードロック式通過型マグネトロンスパッタリング装置(アルバック製)を用いた。ターゲットは、縦5インチ、横15インチの角型のターゲットを用いた。スパッタリング成膜評価スパッタ室を7×10−5Pa以下まで真空排気後、アルゴンと酸素の混合ガスを各ターゲットのガリウム量に応じて適当な酸素の比率になるように導入し、ガス圧を0.6Paに調整した。このような条件のスパッタリングガスを選択した理由は、スパッタ室の真空度が1×10−4Paを超えてチャンバー内の水分圧が高い、あるいは水素ガスが添加される場合には、正当な評価ができなくなるためである。ITOなどでよく知られるように膜中に水分や水素ガス由来のH+が取り込まれると膜の結晶化温度が高くなり、ターゲット非エロージョン部に付着する膜が非晶質化し易くなる。その結果、膜応力が低下するため非エロージョン部から剥がれにくくなり、ノジュールが発生し難くなる。直流電力は、一般に量産で採用される直流電力密度は3〜6W/cm2程度であることを考慮し、2500W(直流電力密度5.17W/cm2)とした。
表1に示すように、実施例1〜11のガリウム含有量がGa/(In+Ga)原子数比で0.20以上0.45以下であり、マグネシウムの含有量がMg/(In+Ga+Mg)原子量比で0.0001以上0.05未満の場合には、ビックスバイト型構造のIn2O3相と、In2O3相以外の生成相としてβ−Ga2O3型構造のGaInO3相、あるいはβ−Ga2O3型構造のGaInO3相と(Ga,In)2O3相によって構成されていた。
Claims (9)
- インジウム、ガリウム及びマグネシウムを酸化物として含有し、
前記ガリウムの含有量がGa/(In+Ga)原子数比で0.20以上0.45以下であり、
前記マグネシウムの含有量がMg/(In+Ga+Mg)原子数比で0.0001以上0.05未満であり、
ビックスバイト型構造のIn2O3相と、In2O3相以外の生成相としてβ−Ga2O3型構造のGaInO3相、あるいはβ−Ga2O3型構造のGaInO3相と(Ga,In)2O3相によって構成され、In(GaMg)O4相、MgGa2O4相、In2MgO4相、Ga2O3相を実質的に含まないことを特徴とする酸化物焼結体。 - 前記マグネシウムの含有量がMg/(In+Ga+Mg)原子数比で0.01以上0.03以下である請求項1に記載の酸化物焼結体。
- 前記ガリウムの含有量がGa/(In+Ga)原子数比で0.20以上0.30以下である請求項1又は2に記載の酸化物焼結体。
- マグネシウム以外の正二価元素、及び、インジウムとガリウム以外の正三価から正六価の元素、を実質的に含有しない請求項1から3のいずれかに記載の酸化物焼結体。
- 下記の式1で定義されるβ−Ga2O3型構造のGaInO3相のX線回折ピーク強度比が2%以上80%以下の範囲である請求項1から4のいずれかに記載の酸化物焼結体。
100×I[GaInO3相(111)]/{I[In2O3相(400)]+I[GaInO3相(111)]} [%]・・・・式1 - 請求項1から5のいずれかに記載の酸化物焼結体を加工して得られるスパッタリング用ターゲット。
- 請求項6に記載のスパッタリング用ターゲットを用いてスパッタリング法によって基板上に形成された後、熱処理された非晶質の酸化物半導体薄膜の製造方法。
- キャリア移動度が10cm2V−1sec−1以上である請求項7に記載の酸化物半導体薄膜の製造方法。
- キャリア濃度が3.0×1018cm−3未満である請求項7又は8に記載の酸化物半導体薄膜の製造方法。
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JP2016521135A Expired - Fee Related JP6414210B2 (ja) | 2014-05-23 | 2015-05-20 | 酸化物焼結体、スパッタリング用ターゲット、及びそれを用いて得られる酸化物半導体薄膜 |
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US (2) | US9941415B2 (ja) |
JP (2) | JP6376215B2 (ja) |
KR (2) | KR20170008724A (ja) |
CN (2) | CN106103380A (ja) |
TW (2) | TWI613151B (ja) |
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JP6376215B2 (ja) * | 2014-05-23 | 2018-08-22 | 住友金属鉱山株式会社 | 酸化物焼結体、スパッタリング用ターゲット、及びそれを用いて得られる酸化物半導体薄膜 |
JP2017154910A (ja) * | 2016-02-29 | 2017-09-07 | 住友金属鉱山株式会社 | 酸化物焼結体及びスパッタリング用ターゲット |
GB201705755D0 (en) | 2017-04-10 | 2017-05-24 | Norwegian Univ Of Science And Tech (Ntnu) | Nanostructure |
JP6834062B2 (ja) * | 2018-08-01 | 2021-02-24 | 出光興産株式会社 | 結晶構造化合物、酸化物焼結体、及びスパッタリングターゲット |
KR20220094735A (ko) * | 2020-12-29 | 2022-07-06 | 에이디알씨 주식회사 | 결정성 산화물 반도체 박막 및 그 형성 방법, 박막 트랜지스터 및 그 제조 방법, 표시 패널 및 전자 장치 |
CN114361276A (zh) * | 2021-12-28 | 2022-04-15 | 仲恺农业工程学院 | 非晶MgGaO薄膜的光伏探测器及其制备方法和应用 |
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US5407602A (en) * | 1993-10-27 | 1995-04-18 | At&T Corp. | Transparent conductors comprising gallium-indium-oxide |
EP2280092A1 (en) | 2001-08-02 | 2011-02-02 | Idemitsu Kosan Co., Ltd. | Sputtering target, transparent conductive film, and their manufacturing method |
EP1737044B1 (en) | 2004-03-12 | 2014-12-10 | Japan Science and Technology Agency | Amorphous oxide and thin film transistor |
JP4816116B2 (ja) | 2006-02-08 | 2011-11-16 | 住友金属鉱山株式会社 | スパッタリングターゲット用酸化物焼結体および、それを用いて得られる酸化物膜、それを含む透明基材 |
JP4231967B2 (ja) * | 2006-10-06 | 2009-03-04 | 住友金属鉱山株式会社 | 酸化物焼結体、その製造方法、透明導電膜、およびそれを用いて得られる太陽電池 |
JP5306179B2 (ja) | 2007-03-20 | 2013-10-02 | 出光興産株式会社 | スパッタリングターゲット、酸化物半導体膜及び半導体デバイス |
KR101646488B1 (ko) * | 2007-07-06 | 2016-08-08 | 스미토모 긴조쿠 고잔 가부시키가이샤 | 산화물 소결물체와 그 제조 방법, 타겟, 및 그것을 이용해 얻어지는 투명 도전막 및 투명 도전성 기재 |
KR20110027805A (ko) * | 2008-06-27 | 2011-03-16 | 이데미쓰 고산 가부시키가이샤 | InGaO3(ZnO) 결정상을 포함하는 산화물 반도체용 스퍼터링 타겟 및 그의 제조 방법 |
KR101723245B1 (ko) * | 2008-09-19 | 2017-04-04 | 이데미쓰 고산 가부시키가이샤 | 산화물 소결체 및 스퍼터링 타겟 |
EP2544237B1 (en) | 2009-09-16 | 2017-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and display device |
JP5327282B2 (ja) * | 2011-06-24 | 2013-10-30 | 住友金属鉱山株式会社 | 透明導電膜製造用焼結体ターゲット |
KR20140041675A (ko) | 2011-07-06 | 2014-04-04 | 이데미쓰 고산 가부시키가이샤 | 스퍼터링 타겟 |
JP6376215B2 (ja) * | 2014-05-23 | 2018-08-22 | 住友金属鉱山株式会社 | 酸化物焼結体、スパッタリング用ターゲット、及びそれを用いて得られる酸化物半導体薄膜 |
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- 2015-05-20 CN CN201580013163.6A patent/CN106103380A/zh active Pending
- 2015-05-20 CN CN201580013205.6A patent/CN106132902A/zh active Pending
- 2015-05-20 US US15/306,915 patent/US9941415B2/en not_active Expired - Fee Related
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- 2015-05-20 US US15/306,910 patent/US20170047206A1/en not_active Abandoned
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- 2015-05-22 TW TW104116410A patent/TWI613151B/zh not_active IP Right Cessation
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TW201602004A (zh) | 2016-01-16 |
TW201602048A (zh) | 2016-01-16 |
US20170047206A1 (en) | 2017-02-16 |
JPWO2015178429A1 (ja) | 2017-04-20 |
KR20170009819A (ko) | 2017-01-25 |
US20170092780A1 (en) | 2017-03-30 |
CN106132902A (zh) | 2016-11-16 |
KR20170008724A (ko) | 2017-01-24 |
JP6376215B2 (ja) | 2018-08-22 |
JPWO2015178430A1 (ja) | 2017-04-27 |
TWI613151B (zh) | 2018-02-01 |
WO2015178430A1 (ja) | 2015-11-26 |
WO2015178429A1 (ja) | 2015-11-26 |
TWI613176B (zh) | 2018-02-01 |
CN106103380A (zh) | 2016-11-09 |
US9941415B2 (en) | 2018-04-10 |
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