CN106029604B - 氧化物烧结体、溅射靶以及使用该溅射靶而得到的氧化物半导体薄膜 - Google Patents

氧化物烧结体、溅射靶以及使用该溅射靶而得到的氧化物半导体薄膜 Download PDF

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CN106029604B
CN106029604B CN201580009757.XA CN201580009757A CN106029604B CN 106029604 B CN106029604 B CN 106029604B CN 201580009757 A CN201580009757 A CN 201580009757A CN 106029604 B CN106029604 B CN 106029604B
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sintered body
type structure
film
gaino
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CN106029604A (zh
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中山德行
西村英郎
西村英一郎
松村文彦
井藁正史
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Mitsui Metal Co ltd
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Mitsui Mining and Smelting Co Ltd
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CN201580009757.XA 2014-02-27 2015-02-12 氧化物烧结体、溅射靶以及使用该溅射靶而得到的氧化物半导体薄膜 Active CN106029604B (zh)

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Application Number Priority Date Filing Date Title
JP2014037022 2014-02-27
JP2014-037022 2014-02-27
JP2014-163148 2014-08-08
JP2014163148 2014-08-08
JP2014-263621 2014-12-25
JP2014263621A JP6358083B2 (ja) 2014-02-27 2014-12-25 酸化物焼結体、スパッタリング用ターゲット、及びそれを用いて得られる酸化物半導体薄膜
PCT/JP2015/053848 WO2015129468A1 (ja) 2014-02-27 2015-02-12 酸化物焼結体、スパッタリング用ターゲット、及びそれを用いて得られる酸化物半導体薄膜

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CN106029604A CN106029604A (zh) 2016-10-12
CN106029604B true CN106029604B (zh) 2019-03-05

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US (1) US9670577B2 (https=)
JP (1) JP6358083B2 (https=)
KR (1) KR102353562B1 (https=)
CN (1) CN106029604B (https=)
TW (1) TWI547573B (https=)
WO (1) WO2015129468A1 (https=)

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JP6358329B2 (ja) * 2014-04-17 2018-07-18 住友金属鉱山株式会社 酸化物焼結体、スパッタリング用ターゲット、及びそれを用いて得られる酸化物半導体薄膜
JP6724057B2 (ja) * 2018-03-30 2020-07-15 Ｊｘ金属株式会社 スパッタリングターゲット部材
JP7247546B2 (ja) * 2018-11-26 2023-03-29 日新電機株式会社 薄膜トランジスタの製造方法
CN118495925A (zh) * 2024-05-10 2024-08-16 南京先锋材料科技有限公司 高电子迁移率氧化物igzo溅射靶材的制备工艺、靶材及应用

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