TWI543341B - 具有去耦電容之非對稱密集浮動閘非揮發性記憶體 - Google Patents

具有去耦電容之非對稱密集浮動閘非揮發性記憶體 Download PDF

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Publication number
TWI543341B
TWI543341B TW103125891A TW103125891A TWI543341B TW I543341 B TWI543341 B TW I543341B TW 103125891 A TW103125891 A TW 103125891A TW 103125891 A TW103125891 A TW 103125891A TW I543341 B TWI543341 B TW I543341B
Authority
TW
Taiwan
Prior art keywords
active region
floating gate
volatile memory
memory cell
implant
Prior art date
Application number
TW103125891A
Other languages
English (en)
Chinese (zh)
Other versions
TW201513312A (zh
Inventor
安德魯Ｅ 霍屈
Original Assignee
賽諾西斯公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 賽諾西斯公司 filed Critical 賽諾西斯公司
Publication of TW201513312A publication Critical patent/TW201513312A/zh
Application granted granted Critical
Publication of TWI543341B publication Critical patent/TWI543341B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/60—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the control gate being a doped region, e.g. single-poly memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
TW103125891A 2013-07-30 2014-07-29 具有去耦電容之非對稱密集浮動閘非揮發性記憶體 TWI543341B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/954,383 US9520404B2 (en) 2013-07-30 2013-07-30 Asymmetric dense floating gate nonvolatile memory with decoupled capacitor

Publications (2)

Publication Number Publication Date
TW201513312A TW201513312A (zh) 2015-04-01
TWI543341B true TWI543341B (zh) 2016-07-21

Family

ID=52426811

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103125891A TWI543341B (zh) 2013-07-30 2014-07-29 具有去耦電容之非對稱密集浮動閘非揮發性記憶體

Country Status (6)

Country Link
US (1) US9520404B2 (de)
JP (1) JP6192834B2 (de)
CN (1) CN105474383B (de)
DE (1) DE112014004243B4 (de)
TW (1) TWI543341B (de)
WO (1) WO2015017126A1 (de)

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US9553207B2 (en) 2013-09-25 2017-01-24 Synopsys, Inc. NVM device using FN tunneling with parallel powered source and drain
KR102399023B1 (ko) * 2015-06-22 2022-05-16 삼성전자주식회사 반도체 장치
US9805806B2 (en) 2015-10-16 2017-10-31 Ememory Technology Inc. Non-volatile memory cell and method of operating the same
US9847133B2 (en) 2016-01-19 2017-12-19 Ememory Technology Inc. Memory array capable of performing byte erase operation
KR102568776B1 (ko) * 2016-03-28 2023-08-22 삼성디스플레이 주식회사 유기 발광 표시 장치
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US10340370B2 (en) 2016-12-07 2019-07-02 Qualcomm Incorporated Asymmetric gated fin field effect transistor (FET) (finFET) diodes
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US10797063B2 (en) * 2018-01-10 2020-10-06 Ememory Technology Inc. Single-poly nonvolatile memory unit
US11387242B2 (en) 2020-03-03 2022-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Non-volatile memory (NVM) cell structure to increase reliability

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Also Published As

Publication number Publication date
CN105474383A (zh) 2016-04-06
JP6192834B2 (ja) 2017-09-06
CN105474383B (zh) 2018-06-01
US20150034909A1 (en) 2015-02-05
JP2016532292A (ja) 2016-10-13
DE112014004243T5 (de) 2016-06-09
US9520404B2 (en) 2016-12-13
DE112014004243B4 (de) 2019-08-14
TW201513312A (zh) 2015-04-01
WO2015017126A1 (en) 2015-02-05

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