TWI542650B - 拋光液及化學機械拋光（ｃｍｐ）方法 - Google Patents

拋光液及化學機械拋光（ｃｍｐ）方法 Download PDF

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Publication number
TWI542650B
TWI542650B TW102138553A TW102138553A TWI542650B TW I542650 B TWI542650 B TW I542650B TW 102138553 A TW102138553 A TW 102138553A TW 102138553 A TW102138553 A TW 102138553A TW I542650 B TWI542650 B TW I542650B
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TW
Taiwan
Prior art keywords
acid
wafer
polishing
composition
abrasive
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TW102138553A
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English (en)
Chinese (zh)
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TW201406891A (zh
Inventor
傑佛瑞 史考特 可羅吉
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３Ｍ新設資產公司
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Publication of TW201406891A publication Critical patent/TW201406891A/zh
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW102138553A 2005-10-24 2006-10-23 拋光液及化學機械拋光（ｃｍｐ）方法 TWI542650B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/256,736 US7435162B2 (en) 2005-10-24 2005-10-24 Polishing fluids and methods for CMP

Publications (2)

Publication Number Publication Date
TW201406891A TW201406891A (zh) 2014-02-16
TWI542650B true TWI542650B (zh) 2016-07-21

Family

ID=37968128

Family Applications (2)

Application Number Title Priority Date Filing Date
TW102138553A TWI542650B (zh) 2005-10-24 2006-10-23 拋光液及化學機械拋光（ｃｍｐ）方法
TW095139028A TWI421317B (zh) 2005-10-24 2006-10-23 拋光液及化學機械拋光（ｃｍｐ）方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW095139028A TWI421317B (zh) 2005-10-24 2006-10-23 拋光液及化學機械拋光（ｃｍｐ）方法

Country Status (7)

Country Link
US (3) US7435162B2 (https=)
EP (1) EP1951837A4 (https=)
JP (1) JP2009513028A (https=)
KR (1) KR20080059397A (https=)
CN (1) CN101297015B (https=)
TW (2) TWI542650B (https=)
WO (1) WO2007050409A1 (https=)

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Also Published As

Publication number Publication date
CN101297015A (zh) 2008-10-29
TWI421317B (zh) 2014-01-01
US20080315154A1 (en) 2008-12-25
EP1951837A4 (en) 2010-02-24
TW201406891A (zh) 2014-02-16
US8070843B2 (en) 2011-12-06
EP1951837A1 (en) 2008-08-06
CN101297015B (zh) 2012-10-31
JP2009513028A (ja) 2009-03-26
TW200720383A (en) 2007-06-01
US20070093182A1 (en) 2007-04-26
US20080315153A1 (en) 2008-12-25
US8038901B2 (en) 2011-10-18
KR20080059397A (ko) 2008-06-27
WO2007050409A1 (en) 2007-05-03
US7435162B2 (en) 2008-10-14

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