TWI540727B - 鰭式場效電晶體元件之鰭結構、鰭式場效電晶體元件 - Google Patents

鰭式場效電晶體元件之鰭結構、鰭式場效電晶體元件 Download PDF

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TWI540727B
TWI540727B TW101146010A TW101146010A TWI540727B TW I540727 B TWI540727 B TW I540727B TW 101146010 A TW101146010 A TW 101146010A TW 101146010 A TW101146010 A TW 101146010A TW I540727 B TWI540727 B TW I540727B
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fin
semiconductor material
field effect
substrate
effect transistor
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TW201340321A (zh
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喬滋爾斯 凡里恩提斯
戴爾 馬克 凡
布萊戴恩 杜瑞茲
理查 肯尼士 奧克蘭
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台灣積體電路製造股份有限公司
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Description

鰭式場效電晶體元件之鰭結構、鰭式場效電晶體元件
本發明是有關於半導體元件及其製法，且特別是有關於鰭式場效電晶體元件及其製法。
半導體元件用於大量的電子元件之中，例如電腦、手機、及其他。半導體元件包括積體電路，其形成於半導體晶圓之上，其藉著於半導體晶圓上沉積許多形式之材料薄膜，並將材料薄膜圖案化以形成積體電路。積體電路包括場效電晶體(field-effect transistors，FETs)，例如金氧半(MOS)電晶體。
半導體工業的目標之一為持續縮小個別場效電晶體之尺寸與增進其速度。為了達成這些目標，將於先進的電晶體技術節點中使用鰭式場效電晶體(FinFETs)或多重閘極電晶體(multiple gate transistors)。例如，鰭式場效電晶體不僅增進表面的密度，還增進對通道區之閘極控制。
致力於增加互補式金氧半導體(CMOS)及金氧半場效電晶體(MOSFET)元件之效能及減少其能量損耗，半導體工業已採用高載子移動率之半導體作為電晶體通道以取代矽。半導體工業還已促進基底絕緣(substrate isolation)技術之發展，其例如透過絕緣層上覆矽(SOI)及異質結構元件(heterostructure devices)，其可增進關閉狀態(off-state)的性質。
本發明一實施例提供一種鰭式場效電晶體元件之鰭結構，包括：一基底；一第一半導體材料，設置於該基底之上；一淺溝槽絕緣區，設置於該基底之上，且形成於第一半導體材料之相對側上；以及一第二半導體材料，形成出設置於該淺溝槽絕緣區上之一第一鰭及一第二鰭，該第一鰭與該第二鰭彼此間隔有該第一半導體材料之一寬度。
本發明一實施例提供一鰭式場效電晶體元件，包括：一基底；一第一半導體材料，設置於該基底之上；一淺溝槽絕緣區，設置於該基底之上，且形成於第一半導體材料之相對側上；一第二半導體材料，形成出設置於該淺溝槽絕緣區上之一第一鰭及一第二鰭，該第一鰭與該第二鰭彼此間隔有該第一半導體材料之一寬度；以及一閘極層，形成於該第一鰭及該第二鰭之上，該第一半導體材料之一頂表面設置於該第一鰭與該第二鰭之間。
本發明一實施例提供一種鰭式場效電晶體元件的形成方法，包括：於一基底上形成一第一半導體材料；於該基底上及該第一半導體材料之一較低部分上形成一淺溝槽絕緣區；沿著該第一半導體材料之一較上部分之側壁磊晶成長一第二半導體材料；以及選擇性蝕刻移除該第一半導體材料之該較上部分以形成一第一鰭及一第二鰭，該第一鰭與該第二鰭彼此間隔有該第一半導體材料之一寬度。
以下將詳細說明本發明實施例之製作與使用方式。然 應注意的是，本揭露書提供許多可供應用的發明概念，其可以多種特定型式實施。文中所舉例討論之特定實施例僅為製造與使用本發明之特定方式，非用以限制本發明之範圍。此外，本揭露書可能於許多實施例重複使用標號及/或文字。此重複僅為了簡化與清楚化，不代表所討論之不同實施例之間必然有關聯。再者，當述及一第一材料層位於一第二材料層上或之上時，包括第一材料層與第二材料層直接接觸或間隔有一或更多其他材料層之情形。為了簡單與清楚化，許多結構可能會繪成不同的尺寸。
此揭露書將以較佳實施例鰭式場效電晶體(FinFET)金氧半導體(MOS)為例作說明。然而，本發明亦可應用至其他積體電路、電子結構、及其相似物。
第1a-1h圖顯示根據一實施例之鰭式場效電晶體元件12(其顯示於第5g圖中)的鰭結構(fin structure)10(其顯示於第2圖中)之製程剖面圖。以下將更完整地解釋，鰭結構10藉著加倍鰭密度(fin density)及增進基底絕緣(substrate isolation)而使得鰭式場效電晶體元件12具有強化的電晶體效能及改進的能量損耗。採用鰭結構10之鰭式場效電晶體元件12確實提供了優秀的效能、短通道效應(short channel effect)、及所需的關閉狀態漏電流控制(off-state leakage control)。此外，在此所揭露之使用鰭結構10而形成之鰭式場效電晶體元件12增加了閘極控制面積，且在不需增加元件之佔據面積的情形下減少閘極在鰭式場效電晶體元件12中之寬度。
現請參照第1a圖，形成圍繞基底16之淺溝槽絕緣(STI) 區14。在一實施例中，淺溝槽絕緣區14形成自二氧化矽或其他適合的介電材料。在一實施例中，基底16為矽或其他適合的半導體材料。如所顯示，基底16一般朝上突出於部分的淺溝槽絕緣區14之間。此外，基底16之頂表面18及淺溝槽絕緣區14之頂表面20一般為共平面。
現請參照第1b圖，藉著蝕刻移除基底16之較上部分以形成凹陷22。接著，在第1c圖中，於凹陷22中形成第一半導體材料24(亦稱為材料A)。在一實施例中，第一半導體材料24係磊晶成長於凹陷22之中。在一實施例中，在凹陷22中填充第一半導體材料24之後，進行化學機械研磨(CMP)製程以將第一半導體材料24之頂表面26及相鄰之淺溝槽絕緣區14之頂表面20光滑化。
在一實施例中，第一半導體材料24為鍺(Ge)、磷化銦(InP)、砷化鎵銦(InGaAs)、砷化銦(InAs)、銻化鎵(GaSb)、或矽鍺(SiGe)。在一實施例中，第一半導體材料24為第四族、第三-五族、或第二-六族之半導體材料。在一實施例中，第一半導體材料24為矽鍺之合金，其分子式為Si1-xGex(其中，1>x>0)。
請參照第1d圖，於第一半導體材料24上形成硬遮罩28。在一實施例中，硬遮罩28形成自氮化矽或其他適合的遮罩材料。一旦沉積了硬遮罩，可進行微影製程以將硬遮罩如第1d圖所示般圖案化。接著，淺溝槽絕緣區14之較上部分藉由硬遮罩而被選擇性蝕刻，如第1e圖所示。如第1e圖所示，第一半導體材料24之較上部分32的相對側壁30現已露出。
現請參照第1f圖，於第一半導體材料24之側壁30上形成第二半導體材料34(亦稱為材料B)。在一實施例中，第二半導體材料34係沿著第一半導體材料24之側壁30磊晶成長。如所示，第二半導體材料34坐落且突出於淺溝槽絕緣區14之上。由於未移除硬遮罩28，因此第二半導體材料34不會成長或形成於第一半導體材料24之頂表面26之上。
在第二半導體材料34設置於第一半導體材料24之側壁30上之後，可移除硬遮罩28，如第1g圖所示。在一實施例中，硬遮罩28是在不侵害相鄰之第二半導體材料34及淺溝槽絕緣區14的情形下移除。接著，進行選擇性蝕刻以移除第一半導體材料24之較上部分32(第1e圖)，如第1h圖所示。如第1h圖所示，在蝕刻移除第一半導體材料24之後，第二半導體材料24形成整體鰭結構10之第一鰭36及第二鰭38。
第一鰭36及第二鰭38一般係設置於淺溝槽絕緣區14上且與之直接接觸，並具有凹陷40夾置於其間。此外，在一實施例中，第一鰭36與第二鰭38間隔有第一半導體材料24之寬度42。仍參照第1h圖，第一半導體材料24之頂表面26及/或淺溝槽絕緣區14之頂表面20一般係與第一鰭36及第二鰭38的底表面44共平面。在一實施例中，第一半導體材料24之頂表面26可設置於淺溝槽絕緣區14之頂表面20的垂直下方。如所示，第一鰭36及第二鰭38垂直突出於第一半導體材料24之頂表面。在一實施例中，第一半導體材料24係經摻雜以抑制或避免透過第一半導 體材料24而傳導。
在一實施例中，當第一半導體材料24為鍺(Ge)時，第二半導體材料34為矽。在這樣的實施例中，可使用鹽酸(HCl)溶液以非常高的選擇比蝕刻移除鍺。在一實施例中，當第一半導體材料24為磷化銦(InP)時，第二半導體材料34為砷化銦鎵(InGaAs)。在這樣的實施例中，可使用鹽酸(HCl)溶液以非常高的選擇比蝕刻移除磷化銦。
在一實施例中，當第一半導體材料24為砷化銦鎵時，第二半導體材料34為磷化銦。在這樣的實施例中，可使用磷酸及過氧化氫(H3PO4+H2O2)溶液以非常高的選擇比蝕刻移除砷化銦鎵。在一實施例中，當第一半導體材料24為砷化銦時，第二半導體材料34為銻化鎵(GaSb)。在這樣的實施例中，可使用檸檬酸及過氧化氫(C6H3O7+H2O2)溶液以非常高的選擇比蝕刻移除砷化銦。
在一實施例中，當第一半導體材料24為銻化鎵時，第二半導體材料34為砷化銦。在這樣的實施例中，可使用氫氧化銨(NH4OH)溶液以非常高的選擇比蝕刻移除銻化鎵。在其他實施例中，可能採用其他的組合及其他的蝕刻化合物。在一些實施例中，選擇比可接近或到達百分之百。
在一實施例中，第二半導體材料34為第四族、第三-五族、或第二-六族之半導體材料。在一實施例中，當第一半導體材料24為矽鍺之合金且其分子式為Si1-xGex(其中，1>x>0)時，第二半導體材料34為矽鍺之合金，且其分子式為Si1-yGey(其中，1>y>0)，其中x>y。在這樣的實施例中，可使用鹽酸(HCl)溶液以非常高的選擇比蝕刻移除具有 Si1-xGex之分子式的矽鍺合金。
現請參照第2圖，在一實施例中，在鰭結構10上之第一鰭36及第二鰭38的高度46可介於約5奈米與約40奈米之間。在一實施例中，第一鰭36及第二鰭38之寬度48可介於約2奈米與約10奈米之間。在一實施例中，第一鰭36及第二鰭38之間的距離50(其通常等於第一半導體材料24之較上部分42的寬度，如第1h圖所示)可介於約5奈米與約20奈米之間。在其他實施例中亦可能採取其他的尺寸。
第3a-3i圖顯示根據其他實施例形成第2圖之鰭結構的製程剖面圖。在進行如先前所述之第3a-3c圖的步驟之後，將第一半導體材料24凹陷化，且形成硬遮罩層52，如第3d圖所示。接著，如第3e圖所示，進行化學機械研磨製程以產生硬遮罩28，其埋於淺溝槽絕緣區14之中。接著，可如前所述進行第3f-3i圖之步驟。
第4a-4f圖顯示根據其他實施例形成鰭式場效電晶體元件之鰭結構的製程剖面圖。如第4a圖所示，於基底16上毯覆式成長或沉積第一半導體材料24。接著，蝕刻移除第一半導體材料24之一部分並以淺溝槽絕緣區14取代之，如第4b圖所示。在第4b圖中，亦蝕刻第一半導體材料24以提供於其上形成硬遮罩28所需之空間。接著，可如前所述進行第4c-4f圖之步驟。
第5a-5g圖顯示根據實施例使用第1a-1h、3a-3i、或4a-4f圖所述之製程其中之一形成鰭結構10以形成之鰭式場效電晶體元件的製程立體圖。如第5a圖所示，已於第一 材料24(其由淺溝槽絕緣區14所圍繞)上形成硬遮罩28。之後，在第5b圖中，移除淺溝槽絕緣區14之較上部分以露出第一半導體材料24之側壁30。顯然，硬遮罩28仍存在。接著，如第5c圖所示，於側壁30及淺溝槽絕緣區14上磊晶成長第二半導體材料34。
一旦形成了第二半導體材料34，硬遮罩28及第一半導體材料24之較上部分(即，第一半導體材料24之設置於淺溝槽絕緣區14上的部分)可接著移除而留下鰭結構10。如上所述，第一半導體材料24相對於第二半導體材料34被選擇性移除。如第5d圖所示，移除第一半導體材料24之較上部分會留下第一鰭36及第二鰭38，其彼此間隔有一距離，相等於第一半導體材料24之寬度。第一鰭36及第二鰭38係形成自第二半導體材料34。
如第5e圖所示，於一部分的淺溝槽絕緣區14、第一鰭36、第一半導體材料24之頂表面26、第二鰭38、及淺溝槽絕緣區14之另一部分上形成閘極層54。如第5f-5g圖所示，形成間隙壁(spacer)56及源極/汲極接觸(source/drain contact)58。為了簡化圖式，僅其中一間隙壁56及其中一源極/汲極接觸58顯示於第5g圖中。然而，本領域人士當可明瞭附加的間隙壁56及附加的源極/汲極接觸58可於鰭式場效電晶體元件12中形成及採用。在一實施例中，源極/汲極接觸58係透過磊晶成長製程而形成。
現請參照第6圖，提供了一種形成鰭式場效電晶體元件的方法60。在步驟62中，於基底上形成第一半導體材料24。在步驟64中，於基底16及第一半導體材料24之 較下部分上形成淺溝槽絕緣區14。在步驟66中，沿著第一半導體材料24之較上部分32的側壁30磊晶成長第二半導體材料34。在步驟68中，選擇性蝕刻移除第一半導體材料24之較上部分以形成第一鰭36及第二鰭38，其彼此間隔有一距離，等同於第一半導體材料24之寬度。
本發明一實施例提供一種鰭式場效電晶體元件之鰭結構，包括：一基底；一第一半導體材料，設置於該基底之上；一淺溝槽絕緣區，設置於該基底之上，且形成於第一半導體材料之相對側上；以及一第二半導體材料，形成出設置於該淺溝槽絕緣區上之一第一鰭及一第二鰭，該第一鰭與該第二鰭彼此間隔有該第一半導體材料之一寬度。
本發明一實施例提供一鰭式場效電晶體元件，包括：一基底；一第一半導體材料，設置於該基底之上；一淺溝槽絕緣區，設置於該基底之上，且形成於第一半導體材料之相對側上；一第二半導體材料，形成出設置於該淺溝槽絕緣區上之一第一鰭及一第二鰭，該第一鰭與該第二鰭彼此間隔有該第一半導體材料之一寬度；以及一閘極層，形成於該第一鰭及該第二鰭之上，該第一半導體材料之一頂表面設置於該第一鰭與該第二鰭之間。
本發明一實施例提供一種鰭式場效電晶體元件的形成方法，包括：於一基底上形成一第一半導體材料；於該基底上及該第一半導體材料之一較低部分上形成一淺溝槽絕緣區；沿著該第一半導體材料之一較上部分之側壁磊晶成長一第二半導體材料；以及選擇性蝕刻移除該第一半導體材料之該較上部分以形成一第一鰭及一第二鰭，該第一鰭 與該第二鰭彼此間隔有該第一半導體材料之一寬度。
雖然本發明已以數個較佳實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作任意之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
10‧‧‧鰭結構
12‧‧‧鰭式場效電晶體元件
14‧‧‧淺溝槽絕緣區
16‧‧‧基底
18、20‧‧‧頂表面
22‧‧‧凹陷
24‧‧‧半導體材料
26‧‧‧頂表面
28‧‧‧硬遮罩
30‧‧‧側壁
32‧‧‧較上部分
34‧‧‧半導體材料
36、38‧‧‧鰭
40‧‧‧凹陷
42‧‧‧寬度
44‧‧‧底表面
46‧‧‧高度
48‧‧‧寬度
52‧‧‧硬遮罩層
54‧‧‧閘極層
56‧‧‧間隙壁
58‧‧‧源極/汲極接觸
60‧‧‧方法
62、64、66、68‧‧‧步驟
第1a-1h圖顯示根據一實施例之鰭式場效電晶體元件的鰭結構之製程剖面圖。
第2圖顯示根據一實施例使用第1圖之製程所形成之鰭結構的剖面圖。
第3a-3i圖顯示根據一實施例形成第2圖之鰭結構的製程剖面圖。
第4a-4f圖顯示根據一實施例形成第2圖之鰭結構的製程剖面圖。
第5a-5g圖顯示根據實施例使用第1a-1h、3a-3i、或4a-4f圖所述之製程其中之一形成鰭式場效電晶體元件的製程立體圖。
第6圖顯示根據一實施例形成第2圖之鰭結構的方法流程圖。
10‧‧‧鰭結構
14‧‧‧淺溝槽絕緣區
16‧‧‧基底
20‧‧‧頂表面
24‧‧‧半導體材料
26‧‧‧頂表面
36、38‧‧‧鰭
42‧‧‧寬度
44‧‧‧底表面

Claims (10)

  1. 一種鰭式場效電晶體元件之鰭結構，包括：一基底；一第一半導體材料，設置於該基底之上；一淺溝槽絕緣區，設置於該基底之上，且形成於第一半導體材料之相對側上；一第二半導體材料，形成出設置於該淺溝槽絕緣區上之一第一鰭及一第二鰭，該第一鰭與該第二鰭彼此間隔有該第一半導體材料之一寬度；以及一介電材料，插入於該第一鰭與該第二鰭之間。
  2. 如申請專利範圍第1項所述之鰭式場效電晶體元件之鰭結構，其中該第一半導體材料相對於該第二半導體材料可以被選擇性蝕刻。
  3. 如申請專利範圍第1項所述之鰭式場效電晶體元件之鰭結構，其中該第一半導體材料之一頂表面與該第一鰭及該第二鰭之一底表面共平面。
  4. 如申請專利範圍第1項所述之鰭式場效電晶體元件之鰭結構，其中該第一半導體材料為一第一矽鍺合金，而該第二半導體材料為一第二矽鍺合金。
  5. 如申請專利範圍第1項所述之鰭式場效電晶體元件之鰭結構，其中該第一半導體材料為鍺，而該第二半導體材料為矽。
  6. 一種鰭式場效電晶體元件，包括：一基底；一第一半導體材料，設置於該基底之上； 一淺溝槽絕緣區，設置於該基底之上，且形成於第一半導體材料之相對側上；一第二半導體材料，形成出設置於該淺溝槽絕緣區上之一第一鰭及一第二鰭，該第一鰭與該第二鰭彼此間隔有該第一半導體材料之一寬度；以及一閘極層，形成於該第一鰭及該第二鰭之上，該第一半導體材料之一頂表面設置於該第一鰭與該第二鰭之間，其中該閘極層插入於該第一鰭與該第二鰭之間並直接接觸該第一鰭與該第二鰭。
  7. 如申請專利範圍第6項所述之鰭式場效電晶體元件，其中該閘極層不形成於該第一半導體材料之側壁之上。
  8. 如申請專利範圍第6項所述之鰭式場效電晶體元件，其中該第一半導體材料係經摻雜以抑制透過該第一半導體材料而傳導。
  9. 一種鰭式場效電晶體元件，包括：一第一半導體材料，具有一底面與複數個側壁，該底面鄰接於一基底，該些側壁鄰接於一淺溝槽絕緣區，該淺溝槽絕緣區鄰接於該基底，其中該第一半導體材料是不同於該基底的材料；一第二半導體材料，提供在垂直方向高於該第一半導體材料的一第一鰭及一第二鰭，該第一鰭及該第二鰭鄰接該淺溝槽絕緣區的一上表面，該第一鰭與該第二鰭彼此間隔有該第一半導體材料之一寬度；以及一閘極層，形成於該第一鰭的上方及該第一半導體材料之在該第一鰭與該第二鰭之間的一上表面的上方，其中 該閘極層沿著該第一鰭的一第一側壁及一第二側壁延伸，且該第一側壁與該第二側壁是不同的側壁。
  10. 如申請專利範圍第9項所述之鰭式場效電晶體元件，其中該第一鰭及該第二鰭的底面是高於該第一半導體材料的最高表面。
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