TWI528427B - Plasma processing device and processing system - Google Patents
Plasma processing device and processing system Download PDFInfo
- Publication number
- TWI528427B TWI528427B TW100143046A TW100143046A TWI528427B TW I528427 B TWI528427 B TW I528427B TW 100143046 A TW100143046 A TW 100143046A TW 100143046 A TW100143046 A TW 100143046A TW I528427 B TWI528427 B TW I528427B
- Authority
- TW
- Taiwan
- Prior art keywords
- central portion
- electrode
- processing apparatus
- lower electrode
- processing chamber
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32807—Construction (includes replacing parts of the apparatus)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32899—Multiple chambers, e.g. cluster tools
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32559—Protection means, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010262857A JP5666888B2 (ja) | 2010-11-25 | 2010-11-25 | プラズマ処理装置及び処理システム |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201234455A TW201234455A (en) | 2012-08-16 |
TWI528427B true TWI528427B (zh) | 2016-04-01 |
Family
ID=46092247
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW100143046A TWI528427B (zh) | 2010-11-25 | 2011-11-24 | Plasma processing device and processing system |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5666888B2 (ja) |
KR (2) | KR101351678B1 (ja) |
CN (1) | CN102479658B (ja) |
TW (1) | TWI528427B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5947435B1 (ja) * | 2015-08-27 | 2016-07-06 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、プログラムおよび記録媒体 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0668839A (ja) * | 1992-08-13 | 1994-03-11 | Tokyo Electron Ltd | プラズマ装置における高周波給電装置 |
JP3010443U (ja) * | 1994-10-20 | 1995-05-02 | 株式会社プラズマシステム | プラズマ処理装置 |
JP4450883B2 (ja) * | 1999-03-30 | 2010-04-14 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP4576011B2 (ja) * | 1999-09-03 | 2010-11-04 | 株式会社アルバック | プラズマ処理装置 |
JP2002329711A (ja) * | 2001-05-01 | 2002-11-15 | Matsushita Electric Ind Co Ltd | 平行平板型電極プラズマ処理装置 |
JP2003100721A (ja) * | 2001-09-27 | 2003-04-04 | Matsushita Electric Ind Co Ltd | プラズマ処理装置 |
JP4158726B2 (ja) * | 2004-03-12 | 2008-10-01 | 富士電機ホールディングス株式会社 | 薄膜製造装置 |
JP4553247B2 (ja) * | 2004-04-30 | 2010-09-29 | 東京エレクトロン株式会社 | プラズマ処理装置 |
KR100710923B1 (ko) * | 2004-06-02 | 2007-04-23 | 동경 엘렉트론 주식회사 | 플라즈마 처리장치 및 임피던스 조정방법 |
JP4623422B2 (ja) * | 2005-03-17 | 2011-02-02 | 富士電機システムズ株式会社 | プラズマ処理装置 |
JP2007220594A (ja) * | 2006-02-20 | 2007-08-30 | Nissin Electric Co Ltd | プラズマ生成方法及びプラズマ生成装置並びにプラズマ処理装置 |
JP4788504B2 (ja) * | 2006-07-12 | 2011-10-05 | 富士電機株式会社 | プラズマ処理装置の給電構造 |
JP4826483B2 (ja) * | 2007-01-19 | 2011-11-30 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP2008235161A (ja) * | 2007-03-23 | 2008-10-02 | Sekisui Chem Co Ltd | プラズマ処理装置 |
KR101362813B1 (ko) * | 2007-08-08 | 2014-02-14 | (주)소슬 | 플라즈마 처리 장치 |
JP4558067B2 (ja) * | 2008-05-21 | 2010-10-06 | シャープ株式会社 | プラズマ処理装置 |
-
2010
- 2010-11-25 JP JP2010262857A patent/JP5666888B2/ja active Active
-
2011
- 2011-11-24 KR KR1020110123538A patent/KR101351678B1/ko active IP Right Grant
- 2011-11-24 TW TW100143046A patent/TWI528427B/zh active
- 2011-11-24 CN CN201110382582.0A patent/CN102479658B/zh active Active
-
2013
- 2013-02-04 KR KR1020130012124A patent/KR20130018360A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
CN102479658A (zh) | 2012-05-30 |
KR101351678B1 (ko) | 2014-01-14 |
TW201234455A (en) | 2012-08-16 |
KR20120056787A (ko) | 2012-06-04 |
KR20130018360A (ko) | 2013-02-20 |
JP2012113998A (ja) | 2012-06-14 |
CN102479658B (zh) | 2014-06-25 |
JP5666888B2 (ja) | 2015-02-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101891445B1 (ko) | 플라즈마 처리 장치 및 그것에 이용하는 배기 구조 | |
TWI702650B (zh) | 電漿處理裝置及使用於此之排氣構造 | |
KR102015697B1 (ko) | 기판 처리 장치 | |
JP2019016697A (ja) | プラズマ処理装置 | |
KR101336565B1 (ko) | 유도 결합 플라즈마용 안테나 유닛 및 유도 결합 플라즈마 처리 장치 | |
TWI767918B (zh) | 電漿蝕刻方法、電漿蝕刻裝置及基板載置台 | |
KR20090021097A (ko) | 처리 장치 | |
TWI403222B (zh) | Plasma processing device | |
JP2004055895A (ja) | 誘導結合プラズマ処理装置 | |
JP2006344998A (ja) | 誘導結合プラズマ処理装置 | |
TWI611455B (zh) | 感應耦合電漿處理裝置 | |
TWI751224B (zh) | 電漿處理裝置及噴頭 | |
TWI743155B (zh) | 電漿蝕刻方法及電漿蝕刻系統 | |
TWI528427B (zh) | Plasma processing device and processing system | |
TW201309104A (zh) | 感應耦合電漿處理裝置 | |
TWI600048B (zh) | Inductively coupled plasma processing device | |
TWI389197B (zh) | Plasma processing device | |
KR101695380B1 (ko) | 유도 결합 플라즈마 처리 장치 | |
KR101949850B1 (ko) | 유도결합 플라즈마 처리장치 | |
JP2023017479A (ja) | 基板処理装置及び基板処理方法 | |
TW202343631A (zh) | 基板載置台、基板處理裝置、及基板載置台之製造方法 | |
TW202143302A (zh) | 基板處理裝置及基板處理方法 | |
KR20120077374A (ko) | 유도결합 플라즈마를 이용한 기판처리장치 및 기판처리방법 |