TWI520181B - 使用多階離子植入將圖案化光阻改質的方法及其系統 - Google Patents
使用多階離子植入將圖案化光阻改質的方法及其系統 Download PDFInfo
- Publication number
- TWI520181B TWI520181B TW100135281A TW100135281A TWI520181B TW I520181 B TWI520181 B TW I520181B TW 100135281 A TW100135281 A TW 100135281A TW 100135281 A TW100135281 A TW 100135281A TW I520181 B TWI520181 B TW I520181B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- ion
- angle
- tilt angle
- patterned photoresist
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
- H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
- H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
- H10P30/221—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks characterised by the angle between the ion beam and the mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
- H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31793—Problems associated with lithography
- H01J2237/31796—Problems associated with lithography affecting resists
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Micromachines (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/896,046 US8133804B1 (en) | 2010-10-01 | 2010-10-01 | Method and system for modifying patterned photoresist using multi-step ion implantation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201222640A TW201222640A (en) | 2012-06-01 |
| TWI520181B true TWI520181B (zh) | 2016-02-01 |
Family
ID=44906363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100135281A TWI520181B (zh) | 2010-10-01 | 2011-09-29 | 使用多階離子植入將圖案化光阻改質的方法及其系統 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8133804B1 (https=) |
| JP (1) | JP5858496B2 (https=) |
| KR (1) | KR101872708B1 (https=) |
| CN (1) | CN103155090B (https=) |
| TW (1) | TWI520181B (https=) |
| WO (1) | WO2012044677A1 (https=) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8974683B2 (en) * | 2011-09-09 | 2015-03-10 | Varian Semiconductor Equipment Associates, Inc. | Method and system for modifying resist openings using multiple angled ions |
| GB2518085B (en) * | 2012-06-29 | 2017-03-01 | Canon Anelva Corp | Ion beam processing method and ion beam processing apparatus |
| CN104345568A (zh) * | 2013-08-07 | 2015-02-11 | 中芯国际集成电路制造(上海)有限公司 | 减小光刻胶图形线宽粗糙度的方法 |
| US20160064239A1 (en) * | 2014-08-28 | 2016-03-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for Integrated Circuit Patterning |
| US9512517B2 (en) * | 2015-01-23 | 2016-12-06 | Varian Semiconductor Equipment Associates, Inc. | Multiple exposure treatment for processing a patterning feature |
| CN106298929B (zh) * | 2015-06-12 | 2019-11-01 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应管的形成方法 |
| KR20170016107A (ko) * | 2015-08-03 | 2017-02-13 | 삼성전자주식회사 | 반도체 장치 제조 방법 |
| CN105632981A (zh) * | 2016-03-19 | 2016-06-01 | 复旦大学 | 一种利用热处理减小微电子器件表面粗糙度的仪器 |
| CN105789044A (zh) * | 2016-03-19 | 2016-07-20 | 复旦大学 | 一种利用热处理减小微电子器件表面粗糙度的方法 |
| US10658184B2 (en) | 2016-12-15 | 2020-05-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pattern fidelity enhancement with directional patterning technology |
| US10310379B2 (en) * | 2017-01-13 | 2019-06-04 | Varian Semiconductor Equipment Associates, Inc. | Multiple patterning approach using ion implantation |
| US10147584B2 (en) | 2017-03-20 | 2018-12-04 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and techniques for decelerated ion beam with no energy contamination |
| KR102491093B1 (ko) | 2017-08-21 | 2023-01-20 | 삼성전자주식회사 | 패턴 형성 방법 |
| US10522349B2 (en) | 2017-11-30 | 2019-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-reflective coating by ion implantation for lithography patterning |
| US10818473B2 (en) * | 2018-08-14 | 2020-10-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Implanter calibration |
| US12505976B2 (en) * | 2020-03-30 | 2025-12-23 | Hitachi High-Tech Corporation | Charged particle beam apparatus and method for calculating roughness index |
| US11635695B2 (en) | 2020-06-15 | 2023-04-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for reducing line-end space in integrated circuit patterning |
| CN111755326A (zh) * | 2020-06-29 | 2020-10-09 | 西安微电子技术研究所 | 一种解决7度角注入工艺中硅衬底起皮缺陷的方法 |
| US12354873B2 (en) * | 2020-09-30 | 2025-07-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method for multiple step directional patterning |
| US11854818B2 (en) * | 2021-05-04 | 2023-12-26 | Applied Materials, Inc. | Angled etch for surface smoothing |
| US12543557B2 (en) * | 2021-06-14 | 2026-02-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method to reduce layout dimensions using non-perpendicular process scheme |
| US12198931B2 (en) * | 2022-04-14 | 2025-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Ion implantation method for reducing roughness of patterned resist lines |
| US20240194540A1 (en) * | 2022-12-08 | 2024-06-13 | Applied Materials, Inc. | Two step implant to improve line edge roughness and line width roughness |
| CN116400440A (zh) * | 2023-04-13 | 2023-07-07 | 吉林大学 | 一种多材料面型可控毫米尺度透镜及其制备方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100272159B1 (ko) * | 1993-11-24 | 2000-11-15 | 윤종용 | 대칭적 이온 주입 방법 |
| JP2000235969A (ja) | 1999-02-15 | 2000-08-29 | Sony Corp | 半導体装置の製造方法 |
| JP4060659B2 (ja) * | 2002-07-24 | 2008-03-12 | 株式会社東芝 | パターン形成方法、及び基板処理装置 |
| US20040087153A1 (en) * | 2002-10-31 | 2004-05-06 | Yan Du | Method of etching a silicon-containing dielectric material |
| JP3963846B2 (ja) * | 2003-01-30 | 2007-08-22 | 東京エレクトロン株式会社 | 熱的処理方法および熱的処理装置 |
| JP4213533B2 (ja) * | 2003-07-17 | 2009-01-21 | 富士通株式会社 | スリミング製造方法およびスリミングシステム |
| CN100440450C (zh) * | 2003-09-30 | 2008-12-03 | 日本航空电子工业株式会社 | 固体表面平坦化方法及其装置 |
| US7291563B2 (en) * | 2005-08-18 | 2007-11-06 | Micron Technology, Inc. | Method of etching a substrate; method of forming a feature on a substrate; and method of depositing a layer comprising silicon, carbon, and fluorine onto a semiconductor substrate |
| CN101563759B (zh) * | 2006-10-30 | 2011-08-03 | 日本航空电子工业株式会社 | 利用气体团簇离子束的固体表面加工方法 |
| US20100096566A1 (en) * | 2008-10-20 | 2010-04-22 | Robert Bristol | Reducing Line Edge Roughness by Particle Beam Exposure |
-
2010
- 2010-10-01 US US12/896,046 patent/US8133804B1/en active Active
-
2011
- 2011-09-28 WO PCT/US2011/053666 patent/WO2012044677A1/en not_active Ceased
- 2011-09-28 JP JP2013531767A patent/JP5858496B2/ja active Active
- 2011-09-28 CN CN201180047008.8A patent/CN103155090B/zh active Active
- 2011-09-28 KR KR1020137010472A patent/KR101872708B1/ko active Active
- 2011-09-29 TW TW100135281A patent/TWI520181B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TW201222640A (en) | 2012-06-01 |
| KR101872708B1 (ko) | 2018-06-29 |
| CN103155090B (zh) | 2016-02-24 |
| KR20130138786A (ko) | 2013-12-19 |
| CN103155090A (zh) | 2013-06-12 |
| WO2012044677A1 (en) | 2012-04-05 |
| JP2013541845A (ja) | 2013-11-14 |
| JP5858496B2 (ja) | 2016-02-10 |
| US8133804B1 (en) | 2012-03-13 |
| US20120083136A1 (en) | 2012-04-05 |
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