CN103155090B - 使用多阶离子植入将图案化光阻改质的方法及其系统 - Google Patents

使用多阶离子植入将图案化光阻改质的方法及其系统 Download PDF

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Publication number
CN103155090B
CN103155090B CN201180047008.8A CN201180047008A CN103155090B CN 103155090 B CN103155090 B CN 103155090B CN 201180047008 A CN201180047008 A CN 201180047008A CN 103155090 B CN103155090 B CN 103155090B
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China
Prior art keywords
ion dose
substrate
ion
patterned photoresist
dose
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CN201180047008.8A
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Chinese (zh)
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CN103155090A (zh
Inventor
卢多维克·葛特
派崔克·M·马汀
约瑟·C·欧尔森
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Varian Semiconductor Equipment Associates Inc
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Varian Semiconductor Equipment Associates Inc
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H10P30/221—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks characterised by the angle between the ion beam and the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31793—Problems associated with lithography
    • H01J2237/31796—Problems associated with lithography affecting resists

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Micromachines (AREA)
CN201180047008.8A 2010-10-01 2011-09-28 使用多阶离子植入将图案化光阻改质的方法及其系统 Active CN103155090B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/896,046 2010-10-01
US12/896,046 US8133804B1 (en) 2010-10-01 2010-10-01 Method and system for modifying patterned photoresist using multi-step ion implantation
PCT/US2011/053666 WO2012044677A1 (en) 2010-10-01 2011-09-28 Method and system for modifying patterned photoresist using multi-step ion implantion

Publications (2)

Publication Number Publication Date
CN103155090A CN103155090A (zh) 2013-06-12
CN103155090B true CN103155090B (zh) 2016-02-24

Family

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CN201180047008.8A Active CN103155090B (zh) 2010-10-01 2011-09-28 使用多阶离子植入将图案化光阻改质的方法及其系统

Country Status (6)

Country Link
US (1) US8133804B1 (https=)
JP (1) JP5858496B2 (https=)
KR (1) KR101872708B1 (https=)
CN (1) CN103155090B (https=)
TW (1) TWI520181B (https=)
WO (1) WO2012044677A1 (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8974683B2 (en) * 2011-09-09 2015-03-10 Varian Semiconductor Equipment Associates, Inc. Method and system for modifying resist openings using multiple angled ions
GB2518085B (en) * 2012-06-29 2017-03-01 Canon Anelva Corp Ion beam processing method and ion beam processing apparatus
CN104345568A (zh) * 2013-08-07 2015-02-11 中芯国际集成电路制造(上海)有限公司 减小光刻胶图形线宽粗糙度的方法
US20160064239A1 (en) * 2014-08-28 2016-03-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method for Integrated Circuit Patterning
US9512517B2 (en) * 2015-01-23 2016-12-06 Varian Semiconductor Equipment Associates, Inc. Multiple exposure treatment for processing a patterning feature
CN106298929B (zh) * 2015-06-12 2019-11-01 中芯国际集成电路制造(上海)有限公司 鳍式场效应管的形成方法
KR20170016107A (ko) * 2015-08-03 2017-02-13 삼성전자주식회사 반도체 장치 제조 방법
CN105632981A (zh) * 2016-03-19 2016-06-01 复旦大学 一种利用热处理减小微电子器件表面粗糙度的仪器
CN105789044A (zh) * 2016-03-19 2016-07-20 复旦大学 一种利用热处理减小微电子器件表面粗糙度的方法
US10658184B2 (en) 2016-12-15 2020-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. Pattern fidelity enhancement with directional patterning technology
US10310379B2 (en) * 2017-01-13 2019-06-04 Varian Semiconductor Equipment Associates, Inc. Multiple patterning approach using ion implantation
US10147584B2 (en) 2017-03-20 2018-12-04 Varian Semiconductor Equipment Associates, Inc. Apparatus and techniques for decelerated ion beam with no energy contamination
KR102491093B1 (ko) 2017-08-21 2023-01-20 삼성전자주식회사 패턴 형성 방법
US10522349B2 (en) 2017-11-30 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective coating by ion implantation for lithography patterning
US10818473B2 (en) * 2018-08-14 2020-10-27 Taiwan Semiconductor Manufacturing Co., Ltd. Implanter calibration
US12505976B2 (en) * 2020-03-30 2025-12-23 Hitachi High-Tech Corporation Charged particle beam apparatus and method for calculating roughness index
US11635695B2 (en) 2020-06-15 2023-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method for reducing line-end space in integrated circuit patterning
CN111755326A (zh) * 2020-06-29 2020-10-09 西安微电子技术研究所 一种解决7度角注入工艺中硅衬底起皮缺陷的方法
US12354873B2 (en) * 2020-09-30 2025-07-08 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for multiple step directional patterning
US11854818B2 (en) * 2021-05-04 2023-12-26 Applied Materials, Inc. Angled etch for surface smoothing
US12543557B2 (en) * 2021-06-14 2026-02-03 Taiwan Semiconductor Manufacturing Co., Ltd. System and method to reduce layout dimensions using non-perpendicular process scheme
US12198931B2 (en) * 2022-04-14 2025-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Ion implantation method for reducing roughness of patterned resist lines
US20240194540A1 (en) * 2022-12-08 2024-06-13 Applied Materials, Inc. Two step implant to improve line edge roughness and line width roughness
CN116400440A (zh) * 2023-04-13 2023-07-07 吉林大学 一种多材料面型可控毫米尺度透镜及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100440450C (zh) * 2003-09-30 2008-12-03 日本航空电子工业株式会社 固体表面平坦化方法及其装置
CN101563759A (zh) * 2006-10-30 2009-10-21 日本航空电子工业株式会社 利用气体团簇离子束的固体表面加工方法
US20100096566A1 (en) * 2008-10-20 2010-04-22 Robert Bristol Reducing Line Edge Roughness by Particle Beam Exposure

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100272159B1 (ko) * 1993-11-24 2000-11-15 윤종용 대칭적 이온 주입 방법
JP2000235969A (ja) 1999-02-15 2000-08-29 Sony Corp 半導体装置の製造方法
JP4060659B2 (ja) * 2002-07-24 2008-03-12 株式会社東芝 パターン形成方法、及び基板処理装置
US20040087153A1 (en) * 2002-10-31 2004-05-06 Yan Du Method of etching a silicon-containing dielectric material
JP3963846B2 (ja) * 2003-01-30 2007-08-22 東京エレクトロン株式会社 熱的処理方法および熱的処理装置
JP4213533B2 (ja) * 2003-07-17 2009-01-21 富士通株式会社 スリミング製造方法およびスリミングシステム
US7291563B2 (en) * 2005-08-18 2007-11-06 Micron Technology, Inc. Method of etching a substrate; method of forming a feature on a substrate; and method of depositing a layer comprising silicon, carbon, and fluorine onto a semiconductor substrate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100440450C (zh) * 2003-09-30 2008-12-03 日本航空电子工业株式会社 固体表面平坦化方法及其装置
CN101563759A (zh) * 2006-10-30 2009-10-21 日本航空电子工业株式会社 利用气体团簇离子束的固体表面加工方法
US20100096566A1 (en) * 2008-10-20 2010-04-22 Robert Bristol Reducing Line Edge Roughness by Particle Beam Exposure

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Sidewall polishing with a gas cluster ion beam for photonic device applications;Bourelle;《Nuclear instruments & methods in physics research》;20051201;第241卷(第1-4期);622-625 *

Also Published As

Publication number Publication date
TWI520181B (zh) 2016-02-01
TW201222640A (en) 2012-06-01
KR101872708B1 (ko) 2018-06-29
KR20130138786A (ko) 2013-12-19
CN103155090A (zh) 2013-06-12
WO2012044677A1 (en) 2012-04-05
JP2013541845A (ja) 2013-11-14
JP5858496B2 (ja) 2016-02-10
US8133804B1 (en) 2012-03-13
US20120083136A1 (en) 2012-04-05

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