JP5858496B2 - 多段階イオン注入を利用してパターニングされたフォトレジストを修正する方法およびシステム - Google Patents

多段階イオン注入を利用してパターニングされたフォトレジストを修正する方法およびシステム Download PDF

Info

Publication number
JP5858496B2
JP5858496B2 JP2013531767A JP2013531767A JP5858496B2 JP 5858496 B2 JP5858496 B2 JP 5858496B2 JP 2013531767 A JP2013531767 A JP 2013531767A JP 2013531767 A JP2013531767 A JP 2013531767A JP 5858496 B2 JP5858496 B2 JP 5858496B2
Authority
JP
Japan
Prior art keywords
ion dose
substrate
sidewall
irradiation
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013531767A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013541845A5 (https=
JP2013541845A (ja
Inventor
ゴデット、ルドヴィック
マーティン、パトリック、エム．
オルソン、ジョセフ、シー．
Original Assignee
バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド filed Critical バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド
Publication of JP2013541845A publication Critical patent/JP2013541845A/ja
Publication of JP2013541845A5 publication Critical patent/JP2013541845A5/ja
Application granted granted Critical
Publication of JP5858496B2 publication Critical patent/JP5858496B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H10P30/221—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks characterised by the angle between the ion beam and the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31793—Problems associated with lithography
    • H01J2237/31796—Problems associated with lithography affecting resists

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Micromachines (AREA)
JP2013531767A 2010-10-01 2011-09-28 多段階イオン注入を利用してパターニングされたフォトレジストを修正する方法およびシステム Active JP5858496B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/896,046 2010-10-01
US12/896,046 US8133804B1 (en) 2010-10-01 2010-10-01 Method and system for modifying patterned photoresist using multi-step ion implantation
PCT/US2011/053666 WO2012044677A1 (en) 2010-10-01 2011-09-28 Method and system for modifying patterned photoresist using multi-step ion implantion

Publications (3)

Publication Number Publication Date
JP2013541845A JP2013541845A (ja) 2013-11-14
JP2013541845A5 JP2013541845A5 (https=) 2014-07-10
JP5858496B2 true JP5858496B2 (ja) 2016-02-10

Family

ID=44906363

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013531767A Active JP5858496B2 (ja) 2010-10-01 2011-09-28 多段階イオン注入を利用してパターニングされたフォトレジストを修正する方法およびシステム

Country Status (6)

Country Link
US (1) US8133804B1 (https=)
JP (1) JP5858496B2 (https=)
KR (1) KR101872708B1 (https=)
CN (1) CN103155090B (https=)
TW (1) TWI520181B (https=)
WO (1) WO2012044677A1 (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8974683B2 (en) * 2011-09-09 2015-03-10 Varian Semiconductor Equipment Associates, Inc. Method and system for modifying resist openings using multiple angled ions
GB2518085B (en) * 2012-06-29 2017-03-01 Canon Anelva Corp Ion beam processing method and ion beam processing apparatus
CN104345568A (zh) * 2013-08-07 2015-02-11 中芯国际集成电路制造(上海)有限公司 减小光刻胶图形线宽粗糙度的方法
US20160064239A1 (en) * 2014-08-28 2016-03-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method for Integrated Circuit Patterning
US9512517B2 (en) * 2015-01-23 2016-12-06 Varian Semiconductor Equipment Associates, Inc. Multiple exposure treatment for processing a patterning feature
CN106298929B (zh) * 2015-06-12 2019-11-01 中芯国际集成电路制造(上海)有限公司 鳍式场效应管的形成方法
KR20170016107A (ko) * 2015-08-03 2017-02-13 삼성전자주식회사 반도체 장치 제조 방법
CN105632981A (zh) * 2016-03-19 2016-06-01 复旦大学 一种利用热处理减小微电子器件表面粗糙度的仪器
CN105789044A (zh) * 2016-03-19 2016-07-20 复旦大学 一种利用热处理减小微电子器件表面粗糙度的方法
US10658184B2 (en) 2016-12-15 2020-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. Pattern fidelity enhancement with directional patterning technology
US10310379B2 (en) * 2017-01-13 2019-06-04 Varian Semiconductor Equipment Associates, Inc. Multiple patterning approach using ion implantation
US10147584B2 (en) 2017-03-20 2018-12-04 Varian Semiconductor Equipment Associates, Inc. Apparatus and techniques for decelerated ion beam with no energy contamination
KR102491093B1 (ko) 2017-08-21 2023-01-20 삼성전자주식회사 패턴 형성 방법
US10522349B2 (en) 2017-11-30 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective coating by ion implantation for lithography patterning
US10818473B2 (en) * 2018-08-14 2020-10-27 Taiwan Semiconductor Manufacturing Co., Ltd. Implanter calibration
US12505976B2 (en) * 2020-03-30 2025-12-23 Hitachi High-Tech Corporation Charged particle beam apparatus and method for calculating roughness index
US11635695B2 (en) 2020-06-15 2023-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method for reducing line-end space in integrated circuit patterning
CN111755326A (zh) * 2020-06-29 2020-10-09 西安微电子技术研究所 一种解决7度角注入工艺中硅衬底起皮缺陷的方法
US12354873B2 (en) * 2020-09-30 2025-07-08 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for multiple step directional patterning
US11854818B2 (en) * 2021-05-04 2023-12-26 Applied Materials, Inc. Angled etch for surface smoothing
US12543557B2 (en) * 2021-06-14 2026-02-03 Taiwan Semiconductor Manufacturing Co., Ltd. System and method to reduce layout dimensions using non-perpendicular process scheme
US12198931B2 (en) * 2022-04-14 2025-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Ion implantation method for reducing roughness of patterned resist lines
US20240194540A1 (en) * 2022-12-08 2024-06-13 Applied Materials, Inc. Two step implant to improve line edge roughness and line width roughness
CN116400440A (zh) * 2023-04-13 2023-07-07 吉林大学 一种多材料面型可控毫米尺度透镜及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100272159B1 (ko) * 1993-11-24 2000-11-15 윤종용 대칭적 이온 주입 방법
JP2000235969A (ja) 1999-02-15 2000-08-29 Sony Corp 半導体装置の製造方法
JP4060659B2 (ja) * 2002-07-24 2008-03-12 株式会社東芝 パターン形成方法、及び基板処理装置
US20040087153A1 (en) * 2002-10-31 2004-05-06 Yan Du Method of etching a silicon-containing dielectric material
JP3963846B2 (ja) * 2003-01-30 2007-08-22 東京エレクトロン株式会社 熱的処理方法および熱的処理装置
JP4213533B2 (ja) * 2003-07-17 2009-01-21 富士通株式会社 スリミング製造方法およびスリミングシステム
CN100440450C (zh) * 2003-09-30 2008-12-03 日本航空电子工业株式会社 固体表面平坦化方法及其装置
US7291563B2 (en) * 2005-08-18 2007-11-06 Micron Technology, Inc. Method of etching a substrate; method of forming a feature on a substrate; and method of depositing a layer comprising silicon, carbon, and fluorine onto a semiconductor substrate
CN101563759B (zh) * 2006-10-30 2011-08-03 日本航空电子工业株式会社 利用气体团簇离子束的固体表面加工方法
US20100096566A1 (en) * 2008-10-20 2010-04-22 Robert Bristol Reducing Line Edge Roughness by Particle Beam Exposure

Also Published As

Publication number Publication date
TWI520181B (zh) 2016-02-01
TW201222640A (en) 2012-06-01
KR101872708B1 (ko) 2018-06-29
CN103155090B (zh) 2016-02-24
KR20130138786A (ko) 2013-12-19
CN103155090A (zh) 2013-06-12
WO2012044677A1 (en) 2012-04-05
JP2013541845A (ja) 2013-11-14
US8133804B1 (en) 2012-03-13
US20120083136A1 (en) 2012-04-05

Similar Documents

Publication Publication Date Title
JP5858496B2 (ja) 多段階イオン注入を利用してパターニングされたフォトレジストを修正する方法およびシステム
US8460569B2 (en) Method and system for post-etch treatment of patterned substrate features
JP5728566B2 (ja) イオン注入を用いて基板のパターン化特徴を変更するための方法及びシステム
JP6091490B2 (ja) レジスト形状におけるクリティカルディメンション及びラフネスの制御方法及び制御システム
US9340877B2 (en) Method and system for modifying photoresist using electromagnetic radiation and ion implantation
CN107112211B (zh) 用于处理图案特征的多重曝光处理
US8974683B2 (en) Method and system for modifying resist openings using multiple angled ions
TWI882554B (zh) 減小安置於工件上的鄰近圖案化光阻線之間的頂對頂距離的方法
TWI877921B (zh) 減小設置於工件上的經圖案化光阻的線邊緣粗糙度與線寬粗糙度的方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140509

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140509

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140521

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150217

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150224

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150518

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20151117

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20151210

R150 Certificate of patent or registration of utility model

Ref document number: 5858496

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250