TWI516174B - 電漿處理系統內之離子能量分布控制 - Google Patents

電漿處理系統內之離子能量分布控制 Download PDF

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Publication number
TWI516174B
TWI516174B TW098143689A TW98143689A TWI516174B TW I516174 B TWI516174 B TW I516174B TW 098143689 A TW098143689 A TW 098143689A TW 98143689 A TW98143689 A TW 98143689A TW I516174 B TWI516174 B TW I516174B
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TW
Taiwan
Prior art keywords
electrode
substrate
ion energy
plasma
processing system
Prior art date
Application number
TW098143689A
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English (en)
Chinese (zh)
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TW201031279A (en
Inventor
安德里斯 費雪
艾瑞克 哈得森
Original Assignee
蘭姆研究公司
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Filing date
Publication date
Application filed by 蘭姆研究公司 filed Critical 蘭姆研究公司
Publication of TW201031279A publication Critical patent/TW201031279A/zh
Application granted granted Critical
Publication of TWI516174B publication Critical patent/TWI516174B/zh

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/34—Details, e.g. electrodes, nozzles
    • H05H1/36—Circuit arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
TW098143689A 2008-12-19 2009-12-18 電漿處理系統內之離子能量分布控制 TWI516174B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13948808P 2008-12-19 2008-12-19
US12/634,959 US9887069B2 (en) 2008-12-19 2009-12-10 Controlling ion energy distribution in plasma processing systems

Publications (2)

Publication Number Publication Date
TW201031279A TW201031279A (en) 2010-08-16
TWI516174B true TWI516174B (zh) 2016-01-01

Family

ID=42264351

Family Applications (2)

Application Number Title Priority Date Filing Date
TW098143689A TWI516174B (zh) 2008-12-19 2009-12-18 電漿處理系統內之離子能量分布控制
TW104131082A TWI639362B (zh) 2008-12-19 2009-12-18 電漿處理系統內之離子能量分布控制

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW104131082A TWI639362B (zh) 2008-12-19 2009-12-18 電漿處理系統內之離子能量分布控制

Country Status (8)

Country Link
US (1) US9887069B2 (enExample)
EP (1) EP2380413A4 (enExample)
JP (2) JP5888981B2 (enExample)
KR (2) KR101679528B1 (enExample)
CN (1) CN102257886B (enExample)
SG (1) SG171843A1 (enExample)
TW (2) TWI516174B (enExample)
WO (1) WO2010080421A2 (enExample)

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TWI917354B (zh) 2020-03-17 2026-03-11 日商東京威力科創股份有限公司 檢查方法、檢查裝置及電漿處理裝置

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Publication number Priority date Publication date Assignee Title
TWI917354B (zh) 2020-03-17 2026-03-11 日商東京威力科創股份有限公司 檢查方法、檢查裝置及電漿處理裝置

Also Published As

Publication number Publication date
KR101679528B1 (ko) 2016-11-24
TWI639362B (zh) 2018-10-21
JP5888981B2 (ja) 2016-03-22
US20100154994A1 (en) 2010-06-24
SG171843A1 (en) 2011-07-28
WO2010080421A2 (en) 2010-07-15
EP2380413A4 (en) 2015-12-02
JP5883481B2 (ja) 2016-03-15
WO2010080421A4 (en) 2010-10-07
TW201603651A (zh) 2016-01-16
CN102257886A (zh) 2011-11-23
US9887069B2 (en) 2018-02-06
KR101650972B1 (ko) 2016-08-24
KR20110112804A (ko) 2011-10-13
CN102257886B (zh) 2014-09-17
KR20150103304A (ko) 2015-09-09
JP2015029104A (ja) 2015-02-12
TW201031279A (en) 2010-08-16
WO2010080421A3 (en) 2010-08-26
JP2012513124A (ja) 2012-06-07
EP2380413A2 (en) 2011-10-26

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