JP5888981B2 - プラズマ処理システムにおけるイオンエネルギ分布の制御 - Google Patents

プラズマ処理システムにおけるイオンエネルギ分布の制御 Download PDF

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Publication number
JP5888981B2
JP5888981B2 JP2011542363A JP2011542363A JP5888981B2 JP 5888981 B2 JP5888981 B2 JP 5888981B2 JP 2011542363 A JP2011542363 A JP 2011542363A JP 2011542363 A JP2011542363 A JP 2011542363A JP 5888981 B2 JP5888981 B2 JP 5888981B2
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Prior art keywords
electrode
substrate
energy distribution
ion energy
plasma processing
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Expired - Fee Related
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Japanese (ja)
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JP2012513124A (ja
JP2012513124A5 (enExample
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フィッシャー・アンドレアス
ハドソン・エリック
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/34—Details, e.g. electrodes, nozzles
    • H05H1/36—Circuit arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma Technology (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Drying Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
JP2011542363A 2008-12-19 2009-12-16 プラズマ処理システムにおけるイオンエネルギ分布の制御 Expired - Fee Related JP5888981B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US13948808P 2008-12-19 2008-12-19
US61/139,488 2008-12-19
US12/634,959 US9887069B2 (en) 2008-12-19 2009-12-10 Controlling ion energy distribution in plasma processing systems
US12/634,959 2009-12-10
PCT/US2009/068186 WO2010080421A2 (en) 2008-12-19 2009-12-16 Controlling ion energy distribution in plasma processing systems

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014163626A Division JP5883481B2 (ja) 2008-12-19 2014-08-11 プラズマ処理システムにおけるイオンエネルギ分布の制御

Publications (3)

Publication Number Publication Date
JP2012513124A JP2012513124A (ja) 2012-06-07
JP2012513124A5 JP2012513124A5 (enExample) 2013-02-07
JP5888981B2 true JP5888981B2 (ja) 2016-03-22

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JP2011542363A Expired - Fee Related JP5888981B2 (ja) 2008-12-19 2009-12-16 プラズマ処理システムにおけるイオンエネルギ分布の制御
JP2014163626A Expired - Fee Related JP5883481B2 (ja) 2008-12-19 2014-08-11 プラズマ処理システムにおけるイオンエネルギ分布の制御

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Country Status (8)

Country Link
US (1) US9887069B2 (enExample)
EP (1) EP2380413A4 (enExample)
JP (2) JP5888981B2 (enExample)
KR (2) KR101650972B1 (enExample)
CN (1) CN102257886B (enExample)
SG (1) SG171843A1 (enExample)
TW (2) TWI639362B (enExample)
WO (1) WO2010080421A2 (enExample)

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Also Published As

Publication number Publication date
TWI516174B (zh) 2016-01-01
KR101679528B1 (ko) 2016-11-24
SG171843A1 (en) 2011-07-28
TW201031279A (en) 2010-08-16
JP5883481B2 (ja) 2016-03-15
TWI639362B (zh) 2018-10-21
KR101650972B1 (ko) 2016-08-24
WO2010080421A2 (en) 2010-07-15
US9887069B2 (en) 2018-02-06
KR20110112804A (ko) 2011-10-13
WO2010080421A3 (en) 2010-08-26
JP2012513124A (ja) 2012-06-07
CN102257886B (zh) 2014-09-17
WO2010080421A4 (en) 2010-10-07
EP2380413A4 (en) 2015-12-02
JP2015029104A (ja) 2015-02-12
EP2380413A2 (en) 2011-10-26
KR20150103304A (ko) 2015-09-09
US20100154994A1 (en) 2010-06-24
CN102257886A (zh) 2011-11-23
TW201603651A (zh) 2016-01-16

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