CN102257886B - 在等离子体处理系统中控制离子能量分布 - Google Patents

在等离子体处理系统中控制离子能量分布 Download PDF

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Publication number
CN102257886B
CN102257886B CN200980150484.5A CN200980150484A CN102257886B CN 102257886 B CN102257886 B CN 102257886B CN 200980150484 A CN200980150484 A CN 200980150484A CN 102257886 B CN102257886 B CN 102257886B
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electrode
plasma processing
processing system
substrate
plasma
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CN102257886A (zh
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安德里亚斯·费舍尔
艾利克·哈德森
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Drying Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
CN200980150484.5A 2008-12-19 2009-12-16 在等离子体处理系统中控制离子能量分布 Active CN102257886B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US13948808P 2008-12-19 2008-12-19
US61/139,488 2008-12-19
US12/634,959 2009-12-10
US12/634,959 US9887069B2 (en) 2008-12-19 2009-12-10 Controlling ion energy distribution in plasma processing systems
PCT/US2009/068186 WO2010080421A2 (en) 2008-12-19 2009-12-16 Controlling ion energy distribution in plasma processing systems

Publications (2)

Publication Number Publication Date
CN102257886A CN102257886A (zh) 2011-11-23
CN102257886B true CN102257886B (zh) 2014-09-17

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CN200980150484.5A Active CN102257886B (zh) 2008-12-19 2009-12-16 在等离子体处理系统中控制离子能量分布

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US (1) US9887069B2 (enExample)
EP (1) EP2380413A4 (enExample)
JP (2) JP5888981B2 (enExample)
KR (2) KR101650972B1 (enExample)
CN (1) CN102257886B (enExample)
SG (1) SG171843A1 (enExample)
TW (2) TWI639362B (enExample)
WO (1) WO2010080421A2 (enExample)

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Also Published As

Publication number Publication date
KR101679528B1 (ko) 2016-11-24
JP5888981B2 (ja) 2016-03-22
SG171843A1 (en) 2011-07-28
CN102257886A (zh) 2011-11-23
WO2010080421A2 (en) 2010-07-15
TWI516174B (zh) 2016-01-01
WO2010080421A3 (en) 2010-08-26
TW201031279A (en) 2010-08-16
JP2015029104A (ja) 2015-02-12
JP5883481B2 (ja) 2016-03-15
EP2380413A4 (en) 2015-12-02
TWI639362B (zh) 2018-10-21
US9887069B2 (en) 2018-02-06
TW201603651A (zh) 2016-01-16
US20100154994A1 (en) 2010-06-24
WO2010080421A4 (en) 2010-10-07
JP2012513124A (ja) 2012-06-07
KR20110112804A (ko) 2011-10-13
KR101650972B1 (ko) 2016-08-24
KR20150103304A (ko) 2015-09-09
EP2380413A2 (en) 2011-10-26

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