JP2012513124A5 - - Google Patents
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- Publication number
- JP2012513124A5 JP2012513124A5 JP2011542363A JP2011542363A JP2012513124A5 JP 2012513124 A5 JP2012513124 A5 JP 2012513124A5 JP 2011542363 A JP2011542363 A JP 2011542363A JP 2011542363 A JP2011542363 A JP 2011542363A JP 2012513124 A5 JP2012513124 A5 JP 2012513124A5
- Authority
- JP
- Japan
- Prior art keywords
- processing system
- plasma processing
- positive ions
- sinusoidal signal
- signal further
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000002500 ions Chemical class 0.000 claims 1
- 230000000737 periodic effect Effects 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13948808P | 2008-12-19 | 2008-12-19 | |
| US61/139,488 | 2008-12-19 | ||
| US12/634,959 US9887069B2 (en) | 2008-12-19 | 2009-12-10 | Controlling ion energy distribution in plasma processing systems |
| US12/634,959 | 2009-12-10 | ||
| PCT/US2009/068186 WO2010080421A2 (en) | 2008-12-19 | 2009-12-16 | Controlling ion energy distribution in plasma processing systems |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014163626A Division JP5883481B2 (ja) | 2008-12-19 | 2014-08-11 | プラズマ処理システムにおけるイオンエネルギ分布の制御 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012513124A JP2012513124A (ja) | 2012-06-07 |
| JP2012513124A5 true JP2012513124A5 (enExample) | 2013-02-07 |
| JP5888981B2 JP5888981B2 (ja) | 2016-03-22 |
Family
ID=42264351
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011542363A Expired - Fee Related JP5888981B2 (ja) | 2008-12-19 | 2009-12-16 | プラズマ処理システムにおけるイオンエネルギ分布の制御 |
| JP2014163626A Expired - Fee Related JP5883481B2 (ja) | 2008-12-19 | 2014-08-11 | プラズマ処理システムにおけるイオンエネルギ分布の制御 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014163626A Expired - Fee Related JP5883481B2 (ja) | 2008-12-19 | 2014-08-11 | プラズマ処理システムにおけるイオンエネルギ分布の制御 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9887069B2 (enExample) |
| EP (1) | EP2380413A4 (enExample) |
| JP (2) | JP5888981B2 (enExample) |
| KR (2) | KR101650972B1 (enExample) |
| CN (1) | CN102257886B (enExample) |
| SG (1) | SG171843A1 (enExample) |
| TW (2) | TWI639362B (enExample) |
| WO (1) | WO2010080421A2 (enExample) |
Families Citing this family (53)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9287086B2 (en) * | 2010-04-26 | 2016-03-15 | Advanced Energy Industries, Inc. | System, method and apparatus for controlling ion energy distribution |
| US11615941B2 (en) | 2009-05-01 | 2023-03-28 | Advanced Energy Industries, Inc. | System, method, and apparatus for controlling ion energy distribution in plasma processing systems |
| US9435029B2 (en) * | 2010-08-29 | 2016-09-06 | Advanced Energy Industries, Inc. | Wafer chucking system for advanced plasma ion energy processing systems |
| US9767988B2 (en) | 2010-08-29 | 2017-09-19 | Advanced Energy Industries, Inc. | Method of controlling the switched mode ion energy distribution system |
| US9309594B2 (en) * | 2010-04-26 | 2016-04-12 | Advanced Energy Industries, Inc. | System, method and apparatus for controlling ion energy distribution of a projected plasma |
| JP5909785B2 (ja) * | 2010-12-07 | 2016-04-27 | デスコ インダストリーズ, インコーポレイテッド | イオン平衡測定及び調整のための遮蔽されたコンデンサ回路を有する電離平衡装置 |
| TW201316375A (zh) * | 2011-10-05 | 2013-04-16 | Intevac Inc | 電感/電容複合式電漿供應源及具有其腔室之系統 |
| US9685297B2 (en) | 2012-08-28 | 2017-06-20 | Advanced Energy Industries, Inc. | Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system |
| JP6329542B2 (ja) * | 2012-08-28 | 2018-05-23 | アドバンスト・エナジー・インダストリーズ・インコーポレイテッドAdvanced Energy Industries, Inc. | プラズマ処理システム、プラズマシース電圧確立方法、および当該方法を実行可能な命令を読み取り可能な記憶媒体 |
| EP2935648B1 (en) * | 2012-12-21 | 2019-08-28 | AGC Inc. | Pair of electrodes for dbd plasma process |
| US9460894B2 (en) | 2013-06-28 | 2016-10-04 | Lam Research Corporation | Controlling ion energy within a plasma chamber |
| EP2854155B1 (en) * | 2013-09-27 | 2017-11-08 | INDEOtec SA | Plasma reactor vessel and assembly, and a method of performing plasma processing |
| US10312048B2 (en) * | 2016-12-12 | 2019-06-04 | Applied Materials, Inc. | Creating ion energy distribution functions (IEDF) |
| US10510575B2 (en) | 2017-09-20 | 2019-12-17 | Applied Materials, Inc. | Substrate support with multiple embedded electrodes |
| KR20190036345A (ko) * | 2017-09-27 | 2019-04-04 | 삼성전자주식회사 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
| CN111788655B (zh) | 2017-11-17 | 2024-04-05 | 先进工程解决方案全球控股私人有限公司 | 对等离子体处理的离子偏置电压的空间和时间控制 |
| PL3711080T3 (pl) | 2017-11-17 | 2023-12-11 | Aes Global Holdings, Pte. Ltd. | Zsynchronizowane pulsowanie źródła przetwarzania plazmy oraz polaryzacji podłoża |
| KR102877884B1 (ko) | 2017-11-17 | 2025-11-04 | 에이이에스 글로벌 홀딩스 피티이 리미티드 | 플라즈마 프로세싱 시스템에서 변조 공급기들의 개선된 적용 |
| US11437221B2 (en) | 2017-11-17 | 2022-09-06 | Advanced Energy Industries, Inc. | Spatial monitoring and control of plasma processing environments |
| US12230476B2 (en) | 2017-11-17 | 2025-02-18 | Advanced Energy Industries, Inc. | Integrated control of a plasma processing system |
| CN108333453B (zh) * | 2018-03-20 | 2020-11-10 | 江苏邦士医疗科技有限公司 | 降低信号源内部冲击电流及等离子体产生的软件处理算法 |
| KR102592922B1 (ko) * | 2018-06-21 | 2023-10-23 | 삼성전자주식회사 | 기판 처리 장치, 신호 소스 장치, 물질막의 처리 방법, 및 반도체 소자의 제조 방법 |
| KR102600003B1 (ko) | 2018-10-30 | 2023-11-09 | 삼성전자주식회사 | 반도체 공정 챔버 및 반도체 소자의 제조 방법 |
| US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
| KR102744694B1 (ko) * | 2019-01-10 | 2024-12-19 | 삼성전자주식회사 | 플라즈마 처리 방법 및 플라즈마 처리 장치 |
| JP7451540B2 (ja) | 2019-01-22 | 2024-03-18 | アプライド マテリアルズ インコーポレイテッド | パルス状電圧波形を制御するためのフィードバックループ |
| US20230352264A1 (en) * | 2019-05-07 | 2023-11-02 | Applied Materials, Inc. | Creating Ion Energy Distribution Functions (IEDF) |
| JP7603649B2 (ja) | 2019-07-12 | 2024-12-20 | エーイーエス グローバル ホールディングス, プライベート リミテッド | 単一制御型スイッチを伴うバイアス供給装置 |
| NL2023935B1 (en) * | 2019-10-02 | 2021-05-31 | Prodrive Tech Bv | Determining an optimal ion energy for plasma processing of a dielectric substrate |
| CN112670149B (zh) * | 2019-10-15 | 2025-06-24 | 北京烁科中科信电子装备有限公司 | 一种消除电极电荷积累的方法 |
| JP7411463B2 (ja) * | 2020-03-17 | 2024-01-11 | 東京エレクトロン株式会社 | 検査方法及び検査装置 |
| US12125674B2 (en) | 2020-05-11 | 2024-10-22 | Advanced Energy Industries, Inc. | Surface charge and power feedback and control using a switch mode bias system |
| US11462389B2 (en) | 2020-07-31 | 2022-10-04 | Applied Materials, Inc. | Pulsed-voltage hardware assembly for use in a plasma processing system |
| US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
| US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
| US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US11776788B2 (en) | 2021-06-28 | 2023-10-03 | Applied Materials, Inc. | Pulsed voltage boost for substrate processing |
| US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
| US12106938B2 (en) | 2021-09-14 | 2024-10-01 | Applied Materials, Inc. | Distortion current mitigation in a radio frequency plasma processing chamber |
| US11694876B2 (en) | 2021-12-08 | 2023-07-04 | Applied Materials, Inc. | Apparatus and method for delivering a plurality of waveform signals during plasma processing |
| US11942309B2 (en) | 2022-01-26 | 2024-03-26 | Advanced Energy Industries, Inc. | Bias supply with resonant switching |
| US11670487B1 (en) | 2022-01-26 | 2023-06-06 | Advanced Energy Industries, Inc. | Bias supply control and data processing |
| US12046448B2 (en) | 2022-01-26 | 2024-07-23 | Advanced Energy Industries, Inc. | Active switch on time control for bias supply |
| US20250259821A1 (en) * | 2022-04-25 | 2025-08-14 | Lam Research Corporation | Method to enhance etch rate and improve critical dimension of features and mask selectivity |
| US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US12315732B2 (en) | 2022-06-10 | 2025-05-27 | Applied Materials, Inc. | Method and apparatus for etching a semiconductor substrate in a plasma etch chamber |
| US11978613B2 (en) | 2022-09-01 | 2024-05-07 | Advanced Energy Industries, Inc. | Transition control in a bias supply |
| US12272524B2 (en) | 2022-09-19 | 2025-04-08 | Applied Materials, Inc. | Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics |
| US12111341B2 (en) | 2022-10-05 | 2024-10-08 | Applied Materials, Inc. | In-situ electric field detection method and apparatus |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100324792B1 (ko) * | 1993-03-31 | 2002-06-20 | 히가시 데쓰로 | 플라즈마처리장치 |
| US6391147B2 (en) * | 1994-04-28 | 2002-05-21 | Tokyo Electron Limited | Plasma treatment method and apparatus |
| EP0801809A2 (en) * | 1995-06-19 | 1997-10-22 | The University Of Tennessee Research Corporation | Discharge methods and electrodes for generating plasmas at one atmosphere of pressure, and materials treated therewith |
| US6902683B1 (en) | 1996-03-01 | 2005-06-07 | Hitachi, Ltd. | Plasma processing apparatus and plasma processing method |
| TW335517B (en) | 1996-03-01 | 1998-07-01 | Hitachi Ltd | Apparatus and method for processing plasma |
| FR2782837B1 (fr) * | 1998-08-28 | 2000-09-29 | Air Liquide | Procede et dispositif de traitement de surface par plasma a pression atmospherique |
| US6201208B1 (en) | 1999-11-04 | 2001-03-13 | Wisconsin Alumni Research Foundation | Method and apparatus for plasma processing with control of ion energy distribution at the substrates |
| TW511398B (en) | 2000-09-12 | 2002-11-21 | Tokyo Electron Ltd | Apparatus and method to control the uniformity of plasma by reducing radial loss |
| JP4557400B2 (ja) * | 2000-09-14 | 2010-10-06 | キヤノン株式会社 | 堆積膜形成方法 |
| US6806201B2 (en) * | 2000-09-29 | 2004-10-19 | Hitachi, Ltd. | Plasma processing apparatus and method using active matching |
| US6957595B2 (en) | 2001-07-13 | 2005-10-25 | Deere & Co. | Tilt steering wheel mechanism |
| US6984288B2 (en) * | 2001-08-08 | 2006-01-10 | Lam Research Corporation | Plasma processor in plasma confinement region within a vacuum chamber |
| JP3898612B2 (ja) | 2001-09-20 | 2007-03-28 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及び処理方法 |
| JP4319514B2 (ja) * | 2002-11-29 | 2009-08-26 | 株式会社日立ハイテクノロジーズ | サグ補償機能付き高周波電源を有するプラズマ処理装置 |
| US20040118344A1 (en) * | 2002-12-20 | 2004-06-24 | Lam Research Corporation | System and method for controlling plasma with an adjustable coupling to ground circuit |
| JP4365227B2 (ja) | 2004-01-14 | 2009-11-18 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| US20050241762A1 (en) * | 2004-04-30 | 2005-11-03 | Applied Materials, Inc. | Alternating asymmetrical plasma generation in a process chamber |
| US7740737B2 (en) * | 2004-06-21 | 2010-06-22 | Tokyo Electron Limited | Plasma processing apparatus and method |
| KR100586402B1 (ko) | 2005-04-15 | 2006-06-08 | (주) 브이에스아이 | 플라즈마 이온주입장치 및 이온주입방법 |
| JP5031252B2 (ja) | 2006-03-30 | 2012-09-19 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP5199595B2 (ja) * | 2007-03-27 | 2013-05-15 | 東京エレクトロン株式会社 | プラズマ処理装置及びそのクリーニング方法 |
| KR20080111627A (ko) * | 2007-06-19 | 2008-12-24 | 삼성전자주식회사 | 플라즈마 공정장치 및 그 방법 |
| US8133359B2 (en) * | 2007-11-16 | 2012-03-13 | Advanced Energy Industries, Inc. | Methods and apparatus for sputtering deposition using direct current |
-
2009
- 2009-12-10 US US12/634,959 patent/US9887069B2/en active Active
- 2009-12-16 EP EP09837888.8A patent/EP2380413A4/en not_active Withdrawn
- 2009-12-16 SG SG2011038601A patent/SG171843A1/en unknown
- 2009-12-16 JP JP2011542363A patent/JP5888981B2/ja not_active Expired - Fee Related
- 2009-12-16 WO PCT/US2009/068186 patent/WO2010080421A2/en not_active Ceased
- 2009-12-16 KR KR1020117013687A patent/KR101650972B1/ko active Active
- 2009-12-16 CN CN200980150484.5A patent/CN102257886B/zh active Active
- 2009-12-16 KR KR1020157022471A patent/KR101679528B1/ko active Active
- 2009-12-18 TW TW104131082A patent/TWI639362B/zh active
- 2009-12-18 TW TW098143689A patent/TWI516174B/zh not_active IP Right Cessation
-
2014
- 2014-08-11 JP JP2014163626A patent/JP5883481B2/ja not_active Expired - Fee Related
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