JP2012513124A5 - - Google Patents

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Publication number
JP2012513124A5
JP2012513124A5 JP2011542363A JP2011542363A JP2012513124A5 JP 2012513124 A5 JP2012513124 A5 JP 2012513124A5 JP 2011542363 A JP2011542363 A JP 2011542363A JP 2011542363 A JP2011542363 A JP 2011542363A JP 2012513124 A5 JP2012513124 A5 JP 2012513124A5
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JP
Japan
Prior art keywords
processing system
plasma processing
positive ions
sinusoidal signal
signal further
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Application number
JP2011542363A
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English (en)
Japanese (ja)
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JP5888981B2 (ja
JP2012513124A (ja
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Priority claimed from US12/634,959 external-priority patent/US9887069B2/en
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Publication of JP2012513124A publication Critical patent/JP2012513124A/ja
Publication of JP2012513124A5 publication Critical patent/JP2012513124A5/ja
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Publication of JP5888981B2 publication Critical patent/JP5888981B2/ja
Expired - Fee Related legal-status Critical Current
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JP2011542363A 2008-12-19 2009-12-16 プラズマ処理システムにおけるイオンエネルギ分布の制御 Expired - Fee Related JP5888981B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US13948808P 2008-12-19 2008-12-19
US61/139,488 2008-12-19
US12/634,959 US9887069B2 (en) 2008-12-19 2009-12-10 Controlling ion energy distribution in plasma processing systems
US12/634,959 2009-12-10
PCT/US2009/068186 WO2010080421A2 (en) 2008-12-19 2009-12-16 Controlling ion energy distribution in plasma processing systems

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014163626A Division JP5883481B2 (ja) 2008-12-19 2014-08-11 プラズマ処理システムにおけるイオンエネルギ分布の制御

Publications (3)

Publication Number Publication Date
JP2012513124A JP2012513124A (ja) 2012-06-07
JP2012513124A5 true JP2012513124A5 (enExample) 2013-02-07
JP5888981B2 JP5888981B2 (ja) 2016-03-22

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JP2011542363A Expired - Fee Related JP5888981B2 (ja) 2008-12-19 2009-12-16 プラズマ処理システムにおけるイオンエネルギ分布の制御
JP2014163626A Expired - Fee Related JP5883481B2 (ja) 2008-12-19 2014-08-11 プラズマ処理システムにおけるイオンエネルギ分布の制御

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JP2014163626A Expired - Fee Related JP5883481B2 (ja) 2008-12-19 2014-08-11 プラズマ処理システムにおけるイオンエネルギ分布の制御

Country Status (8)

Country Link
US (1) US9887069B2 (enExample)
EP (1) EP2380413A4 (enExample)
JP (2) JP5888981B2 (enExample)
KR (2) KR101650972B1 (enExample)
CN (1) CN102257886B (enExample)
SG (1) SG171843A1 (enExample)
TW (2) TWI639362B (enExample)
WO (1) WO2010080421A2 (enExample)

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US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
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