JP2012513124A5 - - Google Patents

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Publication number
JP2012513124A5
JP2012513124A5 JP2011542363A JP2011542363A JP2012513124A5 JP 2012513124 A5 JP2012513124 A5 JP 2012513124A5 JP 2011542363 A JP2011542363 A JP 2011542363A JP 2011542363 A JP2011542363 A JP 2011542363A JP 2012513124 A5 JP2012513124 A5 JP 2012513124A5
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JP
Japan
Prior art keywords
processing system
plasma processing
positive ions
sinusoidal signal
signal further
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Application number
JP2011542363A
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English (en)
Japanese (ja)
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JP5888981B2 (ja
JP2012513124A (ja
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Priority claimed from US12/634,959 external-priority patent/US9887069B2/en
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Publication of JP2012513124A publication Critical patent/JP2012513124A/ja
Publication of JP2012513124A5 publication Critical patent/JP2012513124A5/ja
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Publication of JP5888981B2 publication Critical patent/JP5888981B2/ja
Expired - Fee Related legal-status Critical Current
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JP2011542363A 2008-12-19 2009-12-16 プラズマ処理システムにおけるイオンエネルギ分布の制御 Expired - Fee Related JP5888981B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US13948808P 2008-12-19 2008-12-19
US61/139,488 2008-12-19
US12/634,959 US9887069B2 (en) 2008-12-19 2009-12-10 Controlling ion energy distribution in plasma processing systems
US12/634,959 2009-12-10
PCT/US2009/068186 WO2010080421A2 (en) 2008-12-19 2009-12-16 Controlling ion energy distribution in plasma processing systems

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014163626A Division JP5883481B2 (ja) 2008-12-19 2014-08-11 プラズマ処理システムにおけるイオンエネルギ分布の制御

Publications (3)

Publication Number Publication Date
JP2012513124A JP2012513124A (ja) 2012-06-07
JP2012513124A5 true JP2012513124A5 (enExample) 2013-02-07
JP5888981B2 JP5888981B2 (ja) 2016-03-22

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JP2011542363A Expired - Fee Related JP5888981B2 (ja) 2008-12-19 2009-12-16 プラズマ処理システムにおけるイオンエネルギ分布の制御
JP2014163626A Expired - Fee Related JP5883481B2 (ja) 2008-12-19 2014-08-11 プラズマ処理システムにおけるイオンエネルギ分布の制御

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JP2014163626A Expired - Fee Related JP5883481B2 (ja) 2008-12-19 2014-08-11 プラズマ処理システムにおけるイオンエネルギ分布の制御

Country Status (8)

Country Link
US (1) US9887069B2 (enExample)
EP (1) EP2380413A4 (enExample)
JP (2) JP5888981B2 (enExample)
KR (2) KR101650972B1 (enExample)
CN (1) CN102257886B (enExample)
SG (1) SG171843A1 (enExample)
TW (2) TWI516174B (enExample)
WO (1) WO2010080421A2 (enExample)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9767988B2 (en) 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
US9435029B2 (en) * 2010-08-29 2016-09-06 Advanced Energy Industries, Inc. Wafer chucking system for advanced plasma ion energy processing systems
US9287086B2 (en) * 2010-04-26 2016-03-15 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution
US9309594B2 (en) * 2010-04-26 2016-04-12 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution of a projected plasma
JP5909785B2 (ja) * 2010-12-07 2016-04-27 デスコ インダストリーズ, インコーポレイテッド イオン平衡測定及び調整のための遮蔽されたコンデンサ回路を有する電離平衡装置
WO2013052713A1 (en) * 2011-10-05 2013-04-11 Intevac, Inc. Inductive/capacitive hybrid plasma source and system with such chamber
US9685297B2 (en) * 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
JP6329542B2 (ja) * 2012-08-28 2018-05-23 アドバンスト・エナジー・インダストリーズ・インコーポレイテッドAdvanced Energy Industries, Inc. プラズマ処理システム、プラズマシース電圧確立方法、および当該方法を実行可能な命令を読み取り可能な記憶媒体
PL2935648T3 (pl) * 2012-12-21 2020-10-05 AGC Inc. Para elektrod dla sposobu plazmowego DBD
US9460894B2 (en) 2013-06-28 2016-10-04 Lam Research Corporation Controlling ion energy within a plasma chamber
EP2854155B1 (en) * 2013-09-27 2017-11-08 INDEOtec SA Plasma reactor vessel and assembly, and a method of performing plasma processing
US10312048B2 (en) * 2016-12-12 2019-06-04 Applied Materials, Inc. Creating ion energy distribution functions (IEDF)
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
KR20190036345A (ko) * 2017-09-27 2019-04-04 삼성전자주식회사 플라즈마 처리 장치 및 플라즈마 처리 방법
JP2021503702A (ja) 2017-11-17 2021-02-12 エーイーエス グローバル ホールディングス, プライベート リミテッド プラズマ処理システムにおける変調供給源の改良された印加
CN111868873B (zh) 2017-11-17 2023-06-16 先进工程解决方案全球控股私人有限公司 等离子体处理源和衬底偏置的同步的脉冲化
US12230476B2 (en) 2017-11-17 2025-02-18 Advanced Energy Industries, Inc. Integrated control of a plasma processing system
US12505986B2 (en) 2017-11-17 2025-12-23 Advanced Energy Industries, Inc. Synchronization of plasma processing components
EP3711081B1 (en) 2017-11-17 2024-06-19 AES Global Holdings, Pte. Ltd. Spatial and temporal control of ion bias voltage for plasma processing
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
CN108333453B (zh) * 2018-03-20 2020-11-10 江苏邦士医疗科技有限公司 降低信号源内部冲击电流及等离子体产生的软件处理算法
KR102592922B1 (ko) * 2018-06-21 2023-10-23 삼성전자주식회사 기판 처리 장치, 신호 소스 장치, 물질막의 처리 방법, 및 반도체 소자의 제조 방법
KR102600003B1 (ko) 2018-10-30 2023-11-09 삼성전자주식회사 반도체 공정 챔버 및 반도체 소자의 제조 방법
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
KR102744694B1 (ko) * 2019-01-10 2024-12-19 삼성전자주식회사 플라즈마 처리 방법 및 플라즈마 처리 장치
KR20250100790A (ko) 2019-01-22 2025-07-03 어플라이드 머티어리얼스, 인코포레이티드 펄스 전압 파형을 제어하기 위한 피드백 루프
US20230352264A1 (en) * 2019-05-07 2023-11-02 Applied Materials, Inc. Creating Ion Energy Distribution Functions (IEDF)
TWI887253B (zh) 2019-07-12 2025-06-21 新加坡商Aes全球公司 具有單一控制開關之偏壓供應器
NL2023935B1 (en) * 2019-10-02 2021-05-31 Prodrive Tech Bv Determining an optimal ion energy for plasma processing of a dielectric substrate
CN112670149B (zh) * 2019-10-15 2025-06-24 北京烁科中科信电子装备有限公司 一种消除电极电荷积累的方法
JP7411463B2 (ja) * 2020-03-17 2024-01-11 東京エレクトロン株式会社 検査方法及び検査装置
US12125674B2 (en) 2020-05-11 2024-10-22 Advanced Energy Industries, Inc. Surface charge and power feedback and control using a switch mode bias system
US11848176B2 (en) 2020-07-31 2023-12-19 Applied Materials, Inc. Plasma processing using pulsed-voltage and radio-frequency power
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
US20250259821A1 (en) * 2022-04-25 2025-08-14 Lam Research Corporation Method to enhance etch rate and improve critical dimension of features and mask selectivity
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US11978613B2 (en) 2022-09-01 2024-05-07 Advanced Energy Industries, Inc. Transition control in a bias supply
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100324792B1 (ko) * 1993-03-31 2002-06-20 히가시 데쓰로 플라즈마처리장치
US6391147B2 (en) * 1994-04-28 2002-05-21 Tokyo Electron Limited Plasma treatment method and apparatus
CA2197978A1 (en) * 1995-06-19 1996-12-20 Paul D. Spence Discharge methods and electrodes for generating plasmas at one atmosphere of pressure, and materials treated therewith
US6902683B1 (en) 1996-03-01 2005-06-07 Hitachi, Ltd. Plasma processing apparatus and plasma processing method
TW335517B (en) 1996-03-01 1998-07-01 Hitachi Ltd Apparatus and method for processing plasma
FR2782837B1 (fr) 1998-08-28 2000-09-29 Air Liquide Procede et dispositif de traitement de surface par plasma a pression atmospherique
US6201208B1 (en) 1999-11-04 2001-03-13 Wisconsin Alumni Research Foundation Method and apparatus for plasma processing with control of ion energy distribution at the substrates
TW511398B (en) 2000-09-12 2002-11-21 Tokyo Electron Ltd Apparatus and method to control the uniformity of plasma by reducing radial loss
JP4557400B2 (ja) 2000-09-14 2010-10-06 キヤノン株式会社 堆積膜形成方法
US6806201B2 (en) * 2000-09-29 2004-10-19 Hitachi, Ltd. Plasma processing apparatus and method using active matching
US6957595B2 (en) 2001-07-13 2005-10-25 Deere & Co. Tilt steering wheel mechanism
US6984288B2 (en) * 2001-08-08 2006-01-10 Lam Research Corporation Plasma processor in plasma confinement region within a vacuum chamber
JP3898612B2 (ja) 2001-09-20 2007-03-28 株式会社日立ハイテクノロジーズ プラズマ処理装置及び処理方法
JP4319514B2 (ja) * 2002-11-29 2009-08-26 株式会社日立ハイテクノロジーズ サグ補償機能付き高周波電源を有するプラズマ処理装置
US20040118344A1 (en) * 2002-12-20 2004-06-24 Lam Research Corporation System and method for controlling plasma with an adjustable coupling to ground circuit
JP4365227B2 (ja) 2004-01-14 2009-11-18 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US20050241762A1 (en) * 2004-04-30 2005-11-03 Applied Materials, Inc. Alternating asymmetrical plasma generation in a process chamber
US7740737B2 (en) * 2004-06-21 2010-06-22 Tokyo Electron Limited Plasma processing apparatus and method
KR100586402B1 (ko) 2005-04-15 2006-06-08 (주) 브이에스아이 플라즈마 이온주입장치 및 이온주입방법
JP5031252B2 (ja) 2006-03-30 2012-09-19 東京エレクトロン株式会社 プラズマ処理装置
JP5199595B2 (ja) * 2007-03-27 2013-05-15 東京エレクトロン株式会社 プラズマ処理装置及びそのクリーニング方法
KR20080111627A (ko) * 2007-06-19 2008-12-24 삼성전자주식회사 플라즈마 공정장치 및 그 방법
US8133359B2 (en) * 2007-11-16 2012-03-13 Advanced Energy Industries, Inc. Methods and apparatus for sputtering deposition using direct current

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