JP2012513124A5 - - Google Patents

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Publication number
JP2012513124A5
JP2012513124A5 JP2011542363A JP2011542363A JP2012513124A5 JP 2012513124 A5 JP2012513124 A5 JP 2012513124A5 JP 2011542363 A JP2011542363 A JP 2011542363A JP 2011542363 A JP2011542363 A JP 2011542363A JP 2012513124 A5 JP2012513124 A5 JP 2012513124A5
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JP
Japan
Prior art keywords
processing system
plasma processing
positive ions
sinusoidal signal
signal further
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2011542363A
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English (en)
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JP5888981B2 (ja
JP2012513124A (ja
Filing date
Publication date
Priority claimed from US12/634,959 external-priority patent/US9887069B2/en
Application filed filed Critical
Publication of JP2012513124A publication Critical patent/JP2012513124A/ja
Publication of JP2012513124A5 publication Critical patent/JP2012513124A5/ja
Application granted granted Critical
Publication of JP5888981B2 publication Critical patent/JP5888981B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Claims (1)

  1. 請求項1に記載のプラズマ処理システムであって、
    前記非正弦波信号は、更に、前記プラズマ処理システムにおいて正イオンを惹き付けるために前記周期パルス間に少なくとも一定の負部分を含む、プラズマ処理システム。
JP2011542363A 2008-12-19 2009-12-16 プラズマ処理システムにおけるイオンエネルギ分布の制御 Expired - Fee Related JP5888981B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US13948808P 2008-12-19 2008-12-19
US61/139,488 2008-12-19
US12/634,959 US9887069B2 (en) 2008-12-19 2009-12-10 Controlling ion energy distribution in plasma processing systems
US12/634,959 2009-12-10
PCT/US2009/068186 WO2010080421A2 (en) 2008-12-19 2009-12-16 Controlling ion energy distribution in plasma processing systems

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014163626A Division JP5883481B2 (ja) 2008-12-19 2014-08-11 プラズマ処理システムにおけるイオンエネルギ分布の制御

Publications (3)

Publication Number Publication Date
JP2012513124A JP2012513124A (ja) 2012-06-07
JP2012513124A5 true JP2012513124A5 (ja) 2013-02-07
JP5888981B2 JP5888981B2 (ja) 2016-03-22

Family

ID=42264351

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2011542363A Expired - Fee Related JP5888981B2 (ja) 2008-12-19 2009-12-16 プラズマ処理システムにおけるイオンエネルギ分布の制御
JP2014163626A Expired - Fee Related JP5883481B2 (ja) 2008-12-19 2014-08-11 プラズマ処理システムにおけるイオンエネルギ分布の制御

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2014163626A Expired - Fee Related JP5883481B2 (ja) 2008-12-19 2014-08-11 プラズマ処理システムにおけるイオンエネルギ分布の制御

Country Status (8)

Country Link
US (1) US9887069B2 (ja)
EP (1) EP2380413A4 (ja)
JP (2) JP5888981B2 (ja)
KR (2) KR101650972B1 (ja)
CN (1) CN102257886B (ja)
SG (1) SG171843A1 (ja)
TW (2) TWI639362B (ja)
WO (1) WO2010080421A2 (ja)

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US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
CN113169026B (zh) 2019-01-22 2024-04-26 应用材料公司 用于控制脉冲电压波形的反馈回路
JP2022541004A (ja) 2019-07-12 2022-09-21 エーイーエス グローバル ホールディングス, プライベート リミテッド 単一制御型スイッチを伴うバイアス供給装置
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