JP2012513124A5 - - Google Patents
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- Publication number
- JP2012513124A5 JP2012513124A5 JP2011542363A JP2011542363A JP2012513124A5 JP 2012513124 A5 JP2012513124 A5 JP 2012513124A5 JP 2011542363 A JP2011542363 A JP 2011542363A JP 2011542363 A JP2011542363 A JP 2011542363A JP 2012513124 A5 JP2012513124 A5 JP 2012513124A5
- Authority
- JP
- Japan
- Prior art keywords
- processing system
- plasma processing
- positive ions
- sinusoidal signal
- signal further
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 210000002381 Plasma Anatomy 0.000 claims 3
- 150000002500 ions Chemical class 0.000 claims 1
- 230000000737 periodic Effects 0.000 claims 1
Claims (1)
- 請求項1に記載のプラズマ処理システムであって、
前記非正弦波信号は、更に、前記プラズマ処理システムにおいて正イオンを惹き付けるために前記周期パルス間に少なくとも一定の負部分を含む、プラズマ処理システム。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13948808P | 2008-12-19 | 2008-12-19 | |
US61/139,488 | 2008-12-19 | ||
US12/634,959 US9887069B2 (en) | 2008-12-19 | 2009-12-10 | Controlling ion energy distribution in plasma processing systems |
US12/634,959 | 2009-12-10 | ||
PCT/US2009/068186 WO2010080421A2 (en) | 2008-12-19 | 2009-12-16 | Controlling ion energy distribution in plasma processing systems |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014163626A Division JP5883481B2 (ja) | 2008-12-19 | 2014-08-11 | プラズマ処理システムにおけるイオンエネルギ分布の制御 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012513124A JP2012513124A (ja) | 2012-06-07 |
JP2012513124A5 true JP2012513124A5 (ja) | 2013-02-07 |
JP5888981B2 JP5888981B2 (ja) | 2016-03-22 |
Family
ID=42264351
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011542363A Expired - Fee Related JP5888981B2 (ja) | 2008-12-19 | 2009-12-16 | プラズマ処理システムにおけるイオンエネルギ分布の制御 |
JP2014163626A Expired - Fee Related JP5883481B2 (ja) | 2008-12-19 | 2014-08-11 | プラズマ処理システムにおけるイオンエネルギ分布の制御 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014163626A Expired - Fee Related JP5883481B2 (ja) | 2008-12-19 | 2014-08-11 | プラズマ処理システムにおけるイオンエネルギ分布の制御 |
Country Status (8)
Country | Link |
---|---|
US (1) | US9887069B2 (ja) |
EP (1) | EP2380413A4 (ja) |
JP (2) | JP5888981B2 (ja) |
KR (2) | KR101650972B1 (ja) |
CN (1) | CN102257886B (ja) |
SG (1) | SG171843A1 (ja) |
TW (2) | TWI639362B (ja) |
WO (1) | WO2010080421A2 (ja) |
Families Citing this family (38)
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US9309594B2 (en) * | 2010-04-26 | 2016-04-12 | Advanced Energy Industries, Inc. | System, method and apparatus for controlling ion energy distribution of a projected plasma |
CN103250312A (zh) * | 2010-12-07 | 2013-08-14 | 3M创新有限公司 | 用于离子平衡测量和调节的具有隔离的电容器电路的离子化平衡装置 |
US9034143B2 (en) | 2011-10-05 | 2015-05-19 | Intevac, Inc. | Inductive/capacitive hybrid plasma source and system with such chamber |
KR101860182B1 (ko) * | 2012-08-28 | 2018-05-21 | 어드밴스드 에너지 인더스트리즈 인코포레이티드 | 스위칭 모드 이온 에너지 분포 시스템을 제어하기 위한 방법 |
US9685297B2 (en) * | 2012-08-28 | 2017-06-20 | Advanced Energy Industries, Inc. | Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system |
US10276352B2 (en) * | 2012-12-21 | 2019-04-30 | AGC Inc. | Pair of electrodes for DBD plasma process |
US9460894B2 (en) * | 2013-06-28 | 2016-10-04 | Lam Research Corporation | Controlling ion energy within a plasma chamber |
EP2854155B1 (en) * | 2013-09-27 | 2017-11-08 | INDEOtec SA | Plasma reactor vessel and assembly, and a method of performing plasma processing |
US10312048B2 (en) * | 2016-12-12 | 2019-06-04 | Applied Materials, Inc. | Creating ion energy distribution functions (IEDF) |
KR20190036345A (ko) * | 2017-09-27 | 2019-04-04 | 삼성전자주식회사 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
TWI767088B (zh) | 2017-11-17 | 2022-06-11 | 新加坡商Aes全球公司 | 電漿處理系統,用於調變其中的電源的控制方法及相關的電漿處理控制系統 |
TW202329762A (zh) | 2017-11-17 | 2023-07-16 | 新加坡商Aes 全球公司 | 用於在空間域和時間域上控制基板上的電漿處理之系統和方法,及相關的電腦可讀取媒體 |
EP3711080B1 (en) | 2017-11-17 | 2023-06-21 | AES Global Holdings, Pte. Ltd. | Synchronized pulsing of plasma processing source and substrate bias |
CN108333453B (zh) * | 2018-03-20 | 2020-11-10 | 江苏邦士医疗科技有限公司 | 降低信号源内部冲击电流及等离子体产生的软件处理算法 |
KR102592922B1 (ko) * | 2018-06-21 | 2023-10-23 | 삼성전자주식회사 | 기판 처리 장치, 신호 소스 장치, 물질막의 처리 방법, 및 반도체 소자의 제조 방법 |
KR102600003B1 (ko) | 2018-10-30 | 2023-11-09 | 삼성전자주식회사 | 반도체 공정 챔버 및 반도체 소자의 제조 방법 |
US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
CN113169026B (zh) | 2019-01-22 | 2024-04-26 | 应用材料公司 | 用于控制脉冲电压波形的反馈回路 |
JP2022541004A (ja) | 2019-07-12 | 2022-09-21 | エーイーエス グローバル ホールディングス, プライベート リミテッド | 単一制御型スイッチを伴うバイアス供給装置 |
NL2023935B1 (en) * | 2019-10-02 | 2021-05-31 | Prodrive Tech Bv | Determining an optimal ion energy for plasma processing of a dielectric substrate |
US11848176B2 (en) | 2020-07-31 | 2023-12-19 | Applied Materials, Inc. | Plasma processing using pulsed-voltage and radio-frequency power |
US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
US11776788B2 (en) | 2021-06-28 | 2023-10-03 | Applied Materials, Inc. | Pulsed voltage boost for substrate processing |
US11670487B1 (en) | 2022-01-26 | 2023-06-06 | Advanced Energy Industries, Inc. | Bias supply control and data processing |
US11942309B2 (en) | 2022-01-26 | 2024-03-26 | Advanced Energy Industries, Inc. | Bias supply with resonant switching |
WO2023211665A1 (en) * | 2022-04-25 | 2023-11-02 | Lam Research Corporation | Method to enhance etch rate and improve critical dimension of features and mask selectivity |
US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
US11978613B2 (en) | 2022-09-01 | 2024-05-07 | Advanced Energy Industries, Inc. | Transition control in a bias supply |
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US6201208B1 (en) * | 1999-11-04 | 2001-03-13 | Wisconsin Alumni Research Foundation | Method and apparatus for plasma processing with control of ion energy distribution at the substrates |
TW511398B (en) | 2000-09-12 | 2002-11-21 | Tokyo Electron Ltd | Apparatus and method to control the uniformity of plasma by reducing radial loss |
JP4557400B2 (ja) | 2000-09-14 | 2010-10-06 | キヤノン株式会社 | 堆積膜形成方法 |
US6806201B2 (en) * | 2000-09-29 | 2004-10-19 | Hitachi, Ltd. | Plasma processing apparatus and method using active matching |
US6957595B2 (en) | 2001-07-13 | 2005-10-25 | Deere & Co. | Tilt steering wheel mechanism |
US6984288B2 (en) * | 2001-08-08 | 2006-01-10 | Lam Research Corporation | Plasma processor in plasma confinement region within a vacuum chamber |
JP3898612B2 (ja) | 2001-09-20 | 2007-03-28 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及び処理方法 |
JP4319514B2 (ja) * | 2002-11-29 | 2009-08-26 | 株式会社日立ハイテクノロジーズ | サグ補償機能付き高周波電源を有するプラズマ処理装置 |
US20040118344A1 (en) * | 2002-12-20 | 2004-06-24 | Lam Research Corporation | System and method for controlling plasma with an adjustable coupling to ground circuit |
JP4365227B2 (ja) | 2004-01-14 | 2009-11-18 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
US20050241762A1 (en) * | 2004-04-30 | 2005-11-03 | Applied Materials, Inc. | Alternating asymmetrical plasma generation in a process chamber |
US7740737B2 (en) * | 2004-06-21 | 2010-06-22 | Tokyo Electron Limited | Plasma processing apparatus and method |
KR100586402B1 (ko) | 2005-04-15 | 2006-06-08 | (주) 브이에스아이 | 플라즈마 이온주입장치 및 이온주입방법 |
JP5031252B2 (ja) | 2006-03-30 | 2012-09-19 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP5199595B2 (ja) * | 2007-03-27 | 2013-05-15 | 東京エレクトロン株式会社 | プラズマ処理装置及びそのクリーニング方法 |
KR20080111627A (ko) * | 2007-06-19 | 2008-12-24 | 삼성전자주식회사 | 플라즈마 공정장치 및 그 방법 |
US8133359B2 (en) * | 2007-11-16 | 2012-03-13 | Advanced Energy Industries, Inc. | Methods and apparatus for sputtering deposition using direct current |
-
2009
- 2009-12-10 US US12/634,959 patent/US9887069B2/en active Active
- 2009-12-16 WO PCT/US2009/068186 patent/WO2010080421A2/en active Application Filing
- 2009-12-16 EP EP09837888.8A patent/EP2380413A4/en not_active Withdrawn
- 2009-12-16 JP JP2011542363A patent/JP5888981B2/ja not_active Expired - Fee Related
- 2009-12-16 CN CN200980150484.5A patent/CN102257886B/zh active Active
- 2009-12-16 SG SG2011038601A patent/SG171843A1/en unknown
- 2009-12-16 KR KR1020117013687A patent/KR101650972B1/ko active IP Right Grant
- 2009-12-16 KR KR1020157022471A patent/KR101679528B1/ko active IP Right Grant
- 2009-12-18 TW TW104131082A patent/TWI639362B/zh active
- 2009-12-18 TW TW098143689A patent/TWI516174B/zh not_active IP Right Cessation
-
2014
- 2014-08-11 JP JP2014163626A patent/JP5883481B2/ja not_active Expired - Fee Related
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