KR101650972B1 - 플라즈마 프로세싱 시스템에서의 이온 에너지 분배 제어 - Google Patents

플라즈마 프로세싱 시스템에서의 이온 에너지 분배 제어 Download PDF

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KR101650972B1
KR101650972B1 KR1020117013687A KR20117013687A KR101650972B1 KR 101650972 B1 KR101650972 B1 KR 101650972B1 KR 1020117013687 A KR1020117013687 A KR 1020117013687A KR 20117013687 A KR20117013687 A KR 20117013687A KR 101650972 B1 KR101650972 B1 KR 101650972B1
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electrode
substrate
ion energy
energy distribution
signal
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KR20110112804A (ko
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안드레아스 피셔
에릭 허드슨
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램 리써치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma Technology (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Drying Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
KR1020117013687A 2008-12-19 2009-12-16 플라즈마 프로세싱 시스템에서의 이온 에너지 분배 제어 Active KR101650972B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US13948808P 2008-12-19 2008-12-19
US61/139,488 2008-12-19
US12/634,959 US9887069B2 (en) 2008-12-19 2009-12-10 Controlling ion energy distribution in plasma processing systems
US12/634,959 2009-12-10

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KR1020157022471A Division KR101679528B1 (ko) 2008-12-19 2009-12-16 플라즈마 프로세싱 시스템에서의 이온 에너지 분배 제어

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KR20110112804A KR20110112804A (ko) 2011-10-13
KR101650972B1 true KR101650972B1 (ko) 2016-08-24

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KR1020157022471A Active KR101679528B1 (ko) 2008-12-19 2009-12-16 플라즈마 프로세싱 시스템에서의 이온 에너지 분배 제어

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US (1) US9887069B2 (enExample)
EP (1) EP2380413A4 (enExample)
JP (2) JP5888981B2 (enExample)
KR (2) KR101650972B1 (enExample)
CN (1) CN102257886B (enExample)
SG (1) SG171843A1 (enExample)
TW (2) TWI639362B (enExample)
WO (1) WO2010080421A2 (enExample)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9287086B2 (en) * 2010-04-26 2016-03-15 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution
US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
US9435029B2 (en) * 2010-08-29 2016-09-06 Advanced Energy Industries, Inc. Wafer chucking system for advanced plasma ion energy processing systems
US9767988B2 (en) 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US9309594B2 (en) * 2010-04-26 2016-04-12 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution of a projected plasma
JP5909785B2 (ja) * 2010-12-07 2016-04-27 デスコ インダストリーズ， インコーポレイテッド イオン平衡測定及び調整のための遮蔽されたコンデンサ回路を有する電離平衡装置
TW201316375A (zh) * 2011-10-05 2013-04-16 Intevac Inc 電感／電容複合式電漿供應源及具有其腔室之系統
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
JP6329542B2 (ja) * 2012-08-28 2018-05-23 アドバンスト・エナジー・インダストリーズ・インコーポレイテッドＡｄｖａｎｃｅｄ Ｅｎｅｒｇｙ Ｉｎｄｕｓｔｒｉｅｓ， Ｉｎｃ． プラズマ処理システム、プラズマシース電圧確立方法、および当該方法を実行可能な命令を読み取り可能な記憶媒体
EP2935648B1 (en) * 2012-12-21 2019-08-28 AGC Inc. Pair of electrodes for dbd plasma process
US9460894B2 (en) 2013-06-28 2016-10-04 Lam Research Corporation Controlling ion energy within a plasma chamber
EP2854155B1 (en) * 2013-09-27 2017-11-08 INDEOtec SA Plasma reactor vessel and assembly, and a method of performing plasma processing
US10312048B2 (en) * 2016-12-12 2019-06-04 Applied Materials, Inc. Creating ion energy distribution functions (IEDF)
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
KR20190036345A (ko) * 2017-09-27 2019-04-04 삼성전자주식회사 플라즈마 처리 장치 및 플라즈마 처리 방법
CN111788655B (zh) 2017-11-17 2024-04-05 先进工程解决方案全球控股私人有限公司 对等离子体处理的离子偏置电压的空间和时间控制
PL3711080T3 (pl) 2017-11-17 2023-12-11 Aes Global Holdings, Pte. Ltd. Zsynchronizowane pulsowanie źródła przetwarzania plazmy oraz polaryzacji podłoża
KR102877884B1 (ko) 2017-11-17 2025-11-04 에이이에스 글로벌 홀딩스 피티이 리미티드 플라즈마 프로세싱 시스템에서 변조 공급기들의 개선된 적용
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
US12230476B2 (en) 2017-11-17 2025-02-18 Advanced Energy Industries, Inc. Integrated control of a plasma processing system
CN108333453B (zh) * 2018-03-20 2020-11-10 江苏邦士医疗科技有限公司 降低信号源内部冲击电流及等离子体产生的软件处理算法
KR102592922B1 (ko) * 2018-06-21 2023-10-23 삼성전자주식회사 기판 처리 장치, 신호 소스 장치, 물질막의 처리 방법, 및 반도체 소자의 제조 방법
KR102600003B1 (ko) 2018-10-30 2023-11-09 삼성전자주식회사 반도체 공정 챔버 및 반도체 소자의 제조 방법
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
KR102744694B1 (ko) * 2019-01-10 2024-12-19 삼성전자주식회사 플라즈마 처리 방법 및 플라즈마 처리 장치
JP7451540B2 (ja) 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド パルス状電圧波形を制御するためのフィードバックループ
US20230352264A1 (en) * 2019-05-07 2023-11-02 Applied Materials, Inc. Creating Ion Energy Distribution Functions (IEDF)
JP7603649B2 (ja) 2019-07-12 2024-12-20 エーイーエス グローバル ホールディングス， プライベート リミテッド 単一制御型スイッチを伴うバイアス供給装置
NL2023935B1 (en) * 2019-10-02 2021-05-31 Prodrive Tech Bv Determining an optimal ion energy for plasma processing of a dielectric substrate
CN112670149B (zh) * 2019-10-15 2025-06-24 北京烁科中科信电子装备有限公司 一种消除电极电荷积累的方法
JP7411463B2 (ja) * 2020-03-17 2024-01-11 東京エレクトロン株式会社 検査方法及び検査装置
US12125674B2 (en) 2020-05-11 2024-10-22 Advanced Energy Industries, Inc. Surface charge and power feedback and control using a switch mode bias system
US11462389B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply
US20250259821A1 (en) * 2022-04-25 2025-08-14 Lam Research Corporation Method to enhance etch rate and improve critical dimension of features and mask selectivity
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US11978613B2 (en) 2022-09-01 2024-05-07 Advanced Energy Industries, Inc. Transition control in a bias supply
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030029567A1 (en) 2001-08-08 2003-02-13 Rajinder Dhindsa Dual frequency plasma processor
JP2003309111A (ja) 2001-09-20 2003-10-31 Hitachi High-Technologies Corp プラズマ処理装置及び処理方法
JP2005203491A (ja) * 2004-01-14 2005-07-28 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2008263226A (ja) * 1996-03-01 2008-10-30 Hitachi Ltd プラズマエッチング処理装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100324792B1 (ko) * 1993-03-31 2002-06-20 히가시 데쓰로 플라즈마처리장치
US6391147B2 (en) * 1994-04-28 2002-05-21 Tokyo Electron Limited Plasma treatment method and apparatus
EP0801809A2 (en) * 1995-06-19 1997-10-22 The University Of Tennessee Research Corporation Discharge methods and electrodes for generating plasmas at one atmosphere of pressure, and materials treated therewith
US6902683B1 (en) 1996-03-01 2005-06-07 Hitachi, Ltd. Plasma processing apparatus and plasma processing method
FR2782837B1 (fr) * 1998-08-28 2000-09-29 Air Liquide Procede et dispositif de traitement de surface par plasma a pression atmospherique
US6201208B1 (en) 1999-11-04 2001-03-13 Wisconsin Alumni Research Foundation Method and apparatus for plasma processing with control of ion energy distribution at the substrates
TW511398B (en) 2000-09-12 2002-11-21 Tokyo Electron Ltd Apparatus and method to control the uniformity of plasma by reducing radial loss
JP4557400B2 (ja) * 2000-09-14 2010-10-06 キヤノン株式会社 堆積膜形成方法
US6806201B2 (en) * 2000-09-29 2004-10-19 Hitachi, Ltd. Plasma processing apparatus and method using active matching
US6957595B2 (en) 2001-07-13 2005-10-25 Deere & Co. Tilt steering wheel mechanism
JP4319514B2 (ja) * 2002-11-29 2009-08-26 株式会社日立ハイテクノロジーズ サグ補償機能付き高周波電源を有するプラズマ処理装置
US20040118344A1 (en) * 2002-12-20 2004-06-24 Lam Research Corporation System and method for controlling plasma with an adjustable coupling to ground circuit
US20050241762A1 (en) * 2004-04-30 2005-11-03 Applied Materials, Inc. Alternating asymmetrical plasma generation in a process chamber
US7740737B2 (en) * 2004-06-21 2010-06-22 Tokyo Electron Limited Plasma processing apparatus and method
KR100586402B1 (ko) 2005-04-15 2006-06-08 (주) 브이에스아이 플라즈마 이온주입장치 및 이온주입방법
JP5031252B2 (ja) 2006-03-30 2012-09-19 東京エレクトロン株式会社 プラズマ処理装置
JP5199595B2 (ja) * 2007-03-27 2013-05-15 東京エレクトロン株式会社 プラズマ処理装置及びそのクリーニング方法
KR20080111627A (ko) * 2007-06-19 2008-12-24 삼성전자주식회사 플라즈마 공정장치 및 그 방법
US8133359B2 (en) * 2007-11-16 2012-03-13 Advanced Energy Industries, Inc. Methods and apparatus for sputtering deposition using direct current

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008263226A (ja) * 1996-03-01 2008-10-30 Hitachi Ltd プラズマエッチング処理装置
US20030029567A1 (en) 2001-08-08 2003-02-13 Rajinder Dhindsa Dual frequency plasma processor
JP2003309111A (ja) 2001-09-20 2003-10-31 Hitachi High-Technologies Corp プラズマ処理装置及び処理方法
JP2005203491A (ja) * 2004-01-14 2005-07-28 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法

Also Published As

Publication number Publication date
TWI516174B (zh) 2016-01-01
KR101679528B1 (ko) 2016-11-24
SG171843A1 (en) 2011-07-28
JP5888981B2 (ja) 2016-03-22
TW201031279A (en) 2010-08-16
JP5883481B2 (ja) 2016-03-15
TWI639362B (zh) 2018-10-21
WO2010080421A2 (en) 2010-07-15
US9887069B2 (en) 2018-02-06
KR20110112804A (ko) 2011-10-13
WO2010080421A3 (en) 2010-08-26
JP2012513124A (ja) 2012-06-07
CN102257886B (zh) 2014-09-17
WO2010080421A4 (en) 2010-10-07
EP2380413A4 (en) 2015-12-02
JP2015029104A (ja) 2015-02-12
EP2380413A2 (en) 2011-10-26
KR20150103304A (ko) 2015-09-09
US20100154994A1 (en) 2010-06-24
CN102257886A (zh) 2011-11-23
TW201603651A (zh) 2016-01-16

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