TWI515339B - 用於銅後化學機械平坦化之含水清洗組合物 - Google Patents

用於銅後化學機械平坦化之含水清洗組合物 Download PDF

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Publication number
TWI515339B
TWI515339B TW103109382A TW103109382A TWI515339B TW I515339 B TWI515339 B TW I515339B TW 103109382 A TW103109382 A TW 103109382A TW 103109382 A TW103109382 A TW 103109382A TW I515339 B TWI515339 B TW I515339B
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Taiwan
Prior art keywords
acid
ppm
cleaning composition
concentration
aqueous cleaning
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TW103109382A
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English (en)
Chinese (zh)
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TW201435145A (zh
Inventor
柯政遠
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卡博特微電子公司
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    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C11D3/2086—Hydroxy carboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/28—Heterocyclic compounds containing nitrogen in the ring
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/33—Amino carboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/36—Organic compounds containing phosphorus
    • C11D3/361—Phosphonates, phosphinates or phosphonites
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/36—Organic compounds containing phosphorus
    • C11D3/364—Organic compounds containing phosphorus containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/36—Organic compounds containing phosphorus
    • C11D3/365—Organic compounds containing phosphorus containing carboxyl groups
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3245—Aminoacids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/36—Organic compounds containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/16—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions using inhibitors
    • C23G1/18—Organic inhibitors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/20—Other heavy metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/277—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a planarisation of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Emergency Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW103109382A 2013-03-15 2014-03-14 用於銅後化學機械平坦化之含水清洗組合物 TWI515339B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201361793073P 2013-03-15 2013-03-15

Publications (2)

Publication Number Publication Date
TW201435145A TW201435145A (zh) 2014-09-16
TWI515339B true TWI515339B (zh) 2016-01-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW103109382A TWI515339B (zh) 2013-03-15 2014-03-14 用於銅後化學機械平坦化之含水清洗組合物

Country Status (7)

Country Link
US (1) US20140264151A1 (https=)
EP (1) EP2971248B1 (https=)
JP (1) JP6751015B2 (https=)
KR (1) KR102237745B1 (https=)
CN (1) CN105264117B (https=)
TW (1) TWI515339B (https=)
WO (1) WO2014151361A1 (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6568198B2 (ja) * 2014-07-18 2019-08-28 キャボット マイクロエレクトロニクス コーポレイション Ｃｍｐ後の洗浄組成物及びそれに関連する方法
JP6599464B2 (ja) * 2015-01-05 2019-10-30 インテグリス・インコーポレーテッド 化学機械研磨後製剤および使用方法
US9490142B2 (en) * 2015-04-09 2016-11-08 Qualsig Inc. Cu-low K cleaning and protection compositions
US20160304815A1 (en) * 2015-04-20 2016-10-20 Intermolecular, Inc. Methods and chemical solutions for cleaning photomasks using quaternary ammonium hydroxides
WO2018098139A1 (en) * 2016-11-25 2018-05-31 Entegris, Inc. Cleaning compositions for removing post etch residue
KR20210090294A (ko) * 2017-01-18 2021-07-19 엔테그리스, 아이엔씨. 표면으로부터 세리아 입자를 제거하기 위한 조성물 및 방법
US10731109B2 (en) * 2017-04-11 2020-08-04 Entegris, Inc. Post chemical mechanical polishing formulations and method of use
US11446708B2 (en) 2017-12-04 2022-09-20 Entegris, Inc. Compositions and methods for reducing interaction between abrasive particles and a cleaning brush
WO2020117269A1 (en) * 2018-12-07 2020-06-11 Halliburton Energy Services, Inc. Controlling the formation of polymer-metal complexes in wellbore operations
KR102881892B1 (ko) * 2019-02-19 2025-11-05 미쯔비시 케미컬 주식회사 세륨 화합물 제거용 세정액, 세정 방법 및 반도체 웨이퍼의 제조 방법
JP7220808B2 (ja) * 2019-12-26 2023-02-10 富士フイルム株式会社 洗浄液、洗浄方法
WO2021131451A1 (ja) * 2019-12-26 2021-07-01 富士フイルムエレクトロニクスマテリアルズ株式会社 洗浄方法、洗浄液
US11584900B2 (en) 2020-05-14 2023-02-21 Corrosion Innovations, Llc Method for removing one or more of: coating, corrosion, salt from a surface
CN112663065A (zh) * 2020-11-24 2021-04-16 苏州美源达环保科技股份有限公司 一种碱性蚀刻液的再生循环利用方法
CN113774390B (zh) * 2021-08-12 2023-08-04 上海新阳半导体材料股份有限公司 一种用于化学机械抛光后的清洗液及其制备方法
JP7756561B2 (ja) 2021-12-28 2025-10-20 東京応化工業株式会社 洗浄液、及び基板の洗浄方法
EP4709519A1 (en) * 2023-05-11 2026-03-18 CCI North America Corporation Pre-treated ion exchange resin for alternative energy power source heat transfer systems with low conductivity coolant requirements
CN121175402A (zh) * 2023-06-05 2025-12-19 陶氏环球技术有限责任公司 具有n-取代哌嗪的清洁组合物

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2119722A1 (en) * 1993-03-17 1994-09-18 Edward A. Rodzewich Non-toxic organic corrosion inhibitor
US5733270A (en) * 1995-06-07 1998-03-31 Baxter International Inc. Method and device for precise release of an antimicrobial agent
US5716546A (en) * 1996-10-23 1998-02-10 Osram Sylvania Inc. Reduction of lag in yttrium tantalate x-ray phosphors
US6896826B2 (en) * 1997-01-09 2005-05-24 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US5756218A (en) * 1997-01-09 1998-05-26 Sandia Corporation Corrosion protective coating for metallic materials
KR20010094757A (ko) * 1999-02-05 2001-11-01 리씨 알렉산더 디., 조이스 엘. 모리슨 세정제 조성물 및 그 사용 방법
US6492308B1 (en) 1999-11-16 2002-12-10 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US20100009540A1 (en) * 2002-09-25 2010-01-14 Asahi Glass Company Limited Polishing compound, its production process and polishing method
WO2004100242A1 (ja) * 2003-05-09 2004-11-18 Sanyo Chemical Industries, Ltd. Cmpプロセス用研磨液及び研磨方法
US7968465B2 (en) * 2003-08-14 2011-06-28 Dupont Air Products Nanomaterials Llc Periodic acid compositions for polishing ruthenium/low K substrates
US7241725B2 (en) * 2003-09-25 2007-07-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Barrier polishing fluid
US20050090104A1 (en) * 2003-10-27 2005-04-28 Kai Yang Slurry compositions for chemical mechanical polishing of copper and barrier films
US20050170650A1 (en) * 2004-01-26 2005-08-04 Hongbin Fang Electroless palladium nitrate activation prior to cobalt-alloy deposition
US20050205835A1 (en) * 2004-03-19 2005-09-22 Tamboli Dnyanesh C Alkaline post-chemical mechanical planarization cleaning compositions
US7790618B2 (en) * 2004-12-22 2010-09-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective slurry for chemical mechanical polishing
JP4502206B2 (ja) * 2004-12-28 2010-07-14 三洋化成工業株式会社 微小気泡発生用界面活性剤
TWI282363B (en) 2005-05-19 2007-06-11 Epoch Material Co Ltd Aqueous cleaning composition for semiconductor copper processing
US7374592B2 (en) * 2005-12-15 2008-05-20 Ashland Licensing And Intellectual Property, Llc (Alip) Cleaning and polishing composition for metallic surfaces
CN101410503A (zh) * 2006-03-27 2009-04-15 乔治洛德方法研究和开发液化空气有限公司 用于后cmp清洗工艺的改良碱性溶液
US20070225186A1 (en) * 2006-03-27 2007-09-27 Matthew Fisher Alkaline solutions for post CMP cleaning processes
US7531431B2 (en) * 2006-05-19 2009-05-12 Cree, Inc. Methods for reducing contamination of semiconductor devices and materials during wafer processing
US7947637B2 (en) * 2006-06-30 2011-05-24 Fujifilm Electronic Materials, U.S.A., Inc. Cleaning formulation for removing residues on surfaces
US20080241276A1 (en) * 2006-10-31 2008-10-02 The Procter & Gamble Company Portable bio-chemical decontaminant system and method of using the same
RU2448147C2 (ru) * 2006-12-13 2012-04-20 Хальдор Топсеэ А/С Способ синтеза углеводородных компонентов бензина
US8076155B2 (en) * 2007-06-05 2011-12-13 Ecolab Usa Inc. Wide range kinetic determination of peracid and/or peroxide concentrations
US8404626B2 (en) * 2007-12-21 2013-03-26 Lam Research Corporation Post-deposition cleaning methods and formulations for substrates with cap layers
US7919446B1 (en) * 2007-12-28 2011-04-05 Intermolecular, Inc. Post-CMP cleaning compositions and methods of using same
JP2009194049A (ja) * 2008-02-13 2009-08-27 Sanyo Chem Ind Ltd 銅配線半導体用洗浄剤
JP2009212383A (ja) * 2008-03-05 2009-09-17 Sanyo Chem Ind Ltd 洗浄剤組成物及び半導体基板の製造方法
US20100006511A1 (en) * 2008-07-11 2010-01-14 Walterick Jr Gerald C Treatment additives and methods for treating an aqueous medium
US9074170B2 (en) * 2008-10-21 2015-07-07 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
US8361237B2 (en) * 2008-12-17 2013-01-29 Air Products And Chemicals, Inc. Wet clean compositions for CoWP and porous dielectrics
KR20110127244A (ko) * 2009-03-11 2011-11-24 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 표면 상의 잔류물을 제거하기 위한 세정 조성물
US8557125B2 (en) * 2010-06-07 2013-10-15 General Electric Company Treatment additives, methods for making and methods for clarifying aqueous media
JP5833652B2 (ja) * 2010-08-02 2015-12-16 ダウ グローバル テクノロジーズ エルエルシー ビニルアリールモノマーの重合抑制組成物及び抑制方法
JPWO2012073909A1 (ja) * 2010-11-29 2014-05-19 和光純薬工業株式会社 銅配線用基板洗浄剤及び銅配線半導体基板の洗浄方法
US9714374B2 (en) * 2011-07-15 2017-07-25 Exxonmobil Upstream Research Company Protecting a fluid stream from fouling
KR101983868B1 (ko) * 2011-10-24 2019-05-29 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물, 그것을 사용한 연마 방법 및 기판의 제조 방법

Also Published As

Publication number Publication date
CN105264117B (zh) 2018-11-27
JP2016519423A (ja) 2016-06-30
KR20150127278A (ko) 2015-11-16
EP2971248A1 (en) 2016-01-20
WO2014151361A1 (en) 2014-09-25
EP2971248A4 (en) 2016-12-14
EP2971248B1 (en) 2021-10-13
KR102237745B1 (ko) 2021-04-09
US20140264151A1 (en) 2014-09-18
CN105264117A (zh) 2016-01-20
JP6751015B2 (ja) 2020-09-02
TW201435145A (zh) 2014-09-16

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