TWI515339B - 用於銅後化學機械平坦化之含水清洗組合物 - Google Patents

用於銅後化學機械平坦化之含水清洗組合物 Download PDF

Info

Publication number
TWI515339B
TWI515339B TW103109382A TW103109382A TWI515339B TW I515339 B TWI515339 B TW I515339B TW 103109382 A TW103109382 A TW 103109382A TW 103109382 A TW103109382 A TW 103109382A TW I515339 B TWI515339 B TW I515339B
Authority
TW
Taiwan
Prior art keywords
acid
ppm
cleaning composition
concentration
aqueous cleaning
Prior art date
Application number
TW103109382A
Other languages
English (en)
Chinese (zh)
Other versions
TW201435145A (zh
Inventor
柯政遠
Original Assignee
卡博特微電子公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 卡博特微電子公司 filed Critical 卡博特微電子公司
Publication of TW201435145A publication Critical patent/TW201435145A/zh
Application granted granted Critical
Publication of TWI515339B publication Critical patent/TWI515339B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C11D3/2086—Hydroxy carboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/28—Heterocyclic compounds containing nitrogen in the ring
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/33—Amino carboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/36—Organic compounds containing phosphorus
    • C11D3/361—Phosphonates, phosphinates or phosphonites
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/36—Organic compounds containing phosphorus
    • C11D3/364—Organic compounds containing phosphorus containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/36—Organic compounds containing phosphorus
    • C11D3/365—Organic compounds containing phosphorus containing carboxyl groups
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3245—Aminoacids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/36—Organic compounds containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/16—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions using inhibitors
    • C23G1/18—Organic inhibitors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/20—Other heavy metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/277—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a planarisation of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW103109382A 2013-03-15 2014-03-14 用於銅後化學機械平坦化之含水清洗組合物 TWI515339B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201361793073P 2013-03-15 2013-03-15

Publications (2)

Publication Number Publication Date
TW201435145A TW201435145A (zh) 2014-09-16
TWI515339B true TWI515339B (zh) 2016-01-01

Family

ID=51523479

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103109382A TWI515339B (zh) 2013-03-15 2014-03-14 用於銅後化學機械平坦化之含水清洗組合物

Country Status (7)

Country Link
US (1) US20140264151A1 (https=)
EP (1) EP2971248B1 (https=)
JP (1) JP6751015B2 (https=)
KR (1) KR102237745B1 (https=)
CN (1) CN105264117B (https=)
TW (1) TWI515339B (https=)
WO (1) WO2014151361A1 (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106661518B (zh) * 2014-07-18 2020-01-14 嘉柏微电子材料股份公司 在cmp后使用的清洁组合物及其相关方法
EP3243213A4 (en) * 2015-01-05 2018-08-08 Entegris, Inc. Post chemical mechanical polishing formulations and method of use
US9490142B2 (en) * 2015-04-09 2016-11-08 Qualsig Inc. Cu-low K cleaning and protection compositions
US20160304815A1 (en) * 2015-04-20 2016-10-20 Intermolecular, Inc. Methods and chemical solutions for cleaning photomasks using quaternary ammonium hydroxides
JP2020513440A (ja) * 2016-11-25 2020-05-14 インテグリス・インコーポレーテッド エッチング後残留物を除去するための洗浄組成物
KR20190094426A (ko) * 2017-01-18 2019-08-13 엔테그리스, 아이엔씨. 표면으로부터 세리아 입자를 제거하기 위한 조성물 및 방법
JP6966570B2 (ja) * 2017-04-11 2021-11-17 インテグリス・インコーポレーテッド 化学機械研磨後配合物及び使用方法
US11446708B2 (en) * 2017-12-04 2022-09-20 Entegris, Inc. Compositions and methods for reducing interaction between abrasive particles and a cleaning brush
US11639464B2 (en) * 2018-12-07 2023-05-02 Halliburton Energy Services, Inc. Controlling the formation of polymer-metal complexes in wellbore operations
KR102881892B1 (ko) * 2019-02-19 2025-11-05 미쯔비시 케미컬 주식회사 세륨 화합물 제거용 세정액, 세정 방법 및 반도체 웨이퍼의 제조 방법
JP7286807B2 (ja) * 2019-12-26 2023-06-05 富士フイルム株式会社 洗浄方法、洗浄液
KR102707360B1 (ko) 2019-12-26 2024-09-20 후지필름 가부시키가이샤 세정액, 세정 방법
US11584900B2 (en) 2020-05-14 2023-02-21 Corrosion Innovations, Llc Method for removing one or more of: coating, corrosion, salt from a surface
CN112663065A (zh) * 2020-11-24 2021-04-16 苏州美源达环保科技股份有限公司 一种碱性蚀刻液的再生循环利用方法
CN113774390B (zh) * 2021-08-12 2023-08-04 上海新阳半导体材料股份有限公司 一种用于化学机械抛光后的清洗液及其制备方法
JP7756561B2 (ja) 2021-12-28 2025-10-20 東京応化工業株式会社 洗浄液、及び基板の洗浄方法
CN121100020A (zh) * 2023-05-11 2025-12-09 Cci北美公司 用于具有低电导率冷却剂要求的替代动力源传热系统的经预处理的离子交换树脂
KR20260020954A (ko) * 2023-06-05 2026-02-12 다우 글로벌 테크놀로지스 엘엘씨 N-치환 피페라진을 사용한 세정 조성물

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2119722A1 (en) * 1993-03-17 1994-09-18 Edward A. Rodzewich Non-toxic organic corrosion inhibitor
US5733270A (en) * 1995-06-07 1998-03-31 Baxter International Inc. Method and device for precise release of an antimicrobial agent
US5716546A (en) * 1996-10-23 1998-02-10 Osram Sylvania Inc. Reduction of lag in yttrium tantalate x-ray phosphors
US5756218A (en) * 1997-01-09 1998-05-26 Sandia Corporation Corrosion protective coating for metallic materials
US6896826B2 (en) * 1997-01-09 2005-05-24 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
KR20010094757A (ko) * 1999-02-05 2001-11-01 리씨 알렉산더 디., 조이스 엘. 모리슨 세정제 조성물 및 그 사용 방법
US6492308B1 (en) 1999-11-16 2002-12-10 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US20100009540A1 (en) * 2002-09-25 2010-01-14 Asahi Glass Company Limited Polishing compound, its production process and polishing method
TW200517478A (en) * 2003-05-09 2005-06-01 Sanyo Chemical Ind Ltd Polishing liquid for CMP process and polishing method
US7968465B2 (en) * 2003-08-14 2011-06-28 Dupont Air Products Nanomaterials Llc Periodic acid compositions for polishing ruthenium/low K substrates
US7241725B2 (en) * 2003-09-25 2007-07-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Barrier polishing fluid
US20050090104A1 (en) * 2003-10-27 2005-04-28 Kai Yang Slurry compositions for chemical mechanical polishing of copper and barrier films
US20050170650A1 (en) * 2004-01-26 2005-08-04 Hongbin Fang Electroless palladium nitrate activation prior to cobalt-alloy deposition
US20050205835A1 (en) * 2004-03-19 2005-09-22 Tamboli Dnyanesh C Alkaline post-chemical mechanical planarization cleaning compositions
US7790618B2 (en) * 2004-12-22 2010-09-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective slurry for chemical mechanical polishing
US20090011972A1 (en) * 2004-12-28 2009-01-08 Sanyo Chemical Industries, Ltd. Surfactant for Fine-Bubble Formation
TWI282363B (en) 2005-05-19 2007-06-11 Epoch Material Co Ltd Aqueous cleaning composition for semiconductor copper processing
WO2007070715A2 (en) * 2005-12-15 2007-06-21 Ashland Licensing And Intellectual Property Llc Cleaning and polishing composition for metallic surfaces
CN101410503A (zh) * 2006-03-27 2009-04-15 乔治洛德方法研究和开发液化空气有限公司 用于后cmp清洗工艺的改良碱性溶液
US20070225186A1 (en) * 2006-03-27 2007-09-27 Matthew Fisher Alkaline solutions for post CMP cleaning processes
US7531431B2 (en) * 2006-05-19 2009-05-12 Cree, Inc. Methods for reducing contamination of semiconductor devices and materials during wafer processing
US7947637B2 (en) * 2006-06-30 2011-05-24 Fujifilm Electronic Materials, U.S.A., Inc. Cleaning formulation for removing residues on surfaces
WO2008053440A1 (en) * 2006-10-31 2008-05-08 The Procter & Gamble Company Portable bio-chemical decontaminant system and method of using the same
AU2007331785B2 (en) * 2006-12-13 2012-04-05 Haldor Topsoe A/S Process for the synthesis of hydrocarbon constituents of gasoline
US8076155B2 (en) * 2007-06-05 2011-12-13 Ecolab Usa Inc. Wide range kinetic determination of peracid and/or peroxide concentrations
US8404626B2 (en) * 2007-12-21 2013-03-26 Lam Research Corporation Post-deposition cleaning methods and formulations for substrates with cap layers
US7919446B1 (en) * 2007-12-28 2011-04-05 Intermolecular, Inc. Post-CMP cleaning compositions and methods of using same
JP2009194049A (ja) * 2008-02-13 2009-08-27 Sanyo Chem Ind Ltd 銅配線半導体用洗浄剤
JP2009212383A (ja) * 2008-03-05 2009-09-17 Sanyo Chem Ind Ltd 洗浄剤組成物及び半導体基板の製造方法
US20100006511A1 (en) * 2008-07-11 2010-01-14 Walterick Jr Gerald C Treatment additives and methods for treating an aqueous medium
WO2010048139A2 (en) * 2008-10-21 2010-04-29 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
US8361237B2 (en) * 2008-12-17 2013-01-29 Air Products And Chemicals, Inc. Wet clean compositions for CoWP and porous dielectrics
WO2010104816A1 (en) * 2009-03-11 2010-09-16 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
US8557125B2 (en) * 2010-06-07 2013-10-15 General Electric Company Treatment additives, methods for making and methods for clarifying aqueous media
US8969498B2 (en) * 2010-08-02 2015-03-03 Dow Global Technologies Llc Compositions and method of inhibiting polymerization of vinyl-aryl monomers
EP2647693A4 (en) * 2010-11-29 2014-05-28 Wako Pure Chem Ind Ltd SUBSTRATE CLEANER FOR COPPER GUIDE RAILS AND METHOD FOR CLEANING A COPPER TRAIN SEMI-FINISHED SUBSTRATE
US9714374B2 (en) * 2011-07-15 2017-07-25 Exxonmobil Upstream Research Company Protecting a fluid stream from fouling
DE112012004431B4 (de) * 2011-10-24 2025-12-31 Fujimi Incorporated Zusammensetzung zu Polierzwecken, Polierverfahren unter Verwendung derselben und Verfahren zur Herstellung eines Substrates

Also Published As

Publication number Publication date
WO2014151361A1 (en) 2014-09-25
JP2016519423A (ja) 2016-06-30
JP6751015B2 (ja) 2020-09-02
CN105264117A (zh) 2016-01-20
EP2971248A1 (en) 2016-01-20
TW201435145A (zh) 2014-09-16
CN105264117B (zh) 2018-11-27
KR102237745B1 (ko) 2021-04-09
EP2971248A4 (en) 2016-12-14
EP2971248B1 (en) 2021-10-13
US20140264151A1 (en) 2014-09-18
KR20150127278A (ko) 2015-11-16

Similar Documents

Publication Publication Date Title
TWI515339B (zh) 用於銅後化學機械平坦化之含水清洗組合物
TWI246123B (en) Cleaning agent for semiconductor substrate
KR102314305B1 (ko) 세정용 조성물 및 세정 방법
TWI551681B (zh) 於ｃｍｐ後使用之清潔組合物及其相關方法
JP2006503972A (ja) 半導体デバイスを洗浄するための水性リン酸組成物
KR20240167944A (ko) 부식 억제제를 갖는 세정 조성물
KR20090008271A (ko) Ｃｍｐ 후 세정 공정을 위한 개선된 알칼리 용액
CN101525563B (zh) 用于后研磨清洁剂的腐蚀抑制剂
CN116457447A (zh) 化学机械抛光后(post cmp)清洁组合物
CN101410503A (zh) 用于后cmp清洗工艺的改良碱性溶液
JP4475538B2 (ja) 半導体銅プロセシング用水性洗浄組成物
JP2001308052A (ja) 半導体基板の洗浄方法
TWI437093B (zh) 半導體銅製程用水相清洗組合物
KR101101378B1 (ko) Ｔｆｔ-ｌｃｄ용 세정액 조성물
JP2020136444A (ja) セリウム化合物除去用洗浄液、洗浄方法及び半導体ウェハの製造方法
TWI463007B (zh) 用於後化學機械平坦化之含水清洗組合物
JP2005075924A (ja) シリカスケール除去剤
JP2004307634A (ja) 洗浄液及びそれを用いた洗浄方法
JP2009218473A (ja) 洗浄剤及びそれを用いた半導体デバイスの洗浄方法
CN101362986B (zh) 半导体铜加工用水相清洗组合物
TWI912160B (zh) 金屬膜拋光後之清洗液組合物
KR20190079995A (ko) 세정액 조성물
TW499477B (en) An aqueous cleaning composition for post chemical mechanical planarization
CN100348709C (zh) 用于半导体铜制程的水相清洗组合物