TWI514558B - 半導體磊晶晶圓的製造方法、半導體磊晶晶圓及固體攝影元件的製造方法 - Google Patents
半導體磊晶晶圓的製造方法、半導體磊晶晶圓及固體攝影元件的製造方法 Download PDFInfo
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- TWI514558B TWI514558B TW102141071A TW102141071A TWI514558B TW I514558 B TWI514558 B TW I514558B TW 102141071 A TW102141071 A TW 102141071A TW 102141071 A TW102141071 A TW 102141071A TW I514558 B TWI514558 B TW I514558B
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- wafer
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- 238000004458 analytical method Methods 0.000 description 2
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- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
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- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
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- H10F39/026—Wafer-level processing
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
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| TW201423969A TW201423969A (zh) | 2014-06-16 |
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| WO (1) | WO2014076921A1 (enExample) |
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| JP6119637B2 (ja) * | 2014-02-26 | 2017-04-26 | 信越半導体株式会社 | アニール基板の製造方法、及び半導体装置の製造方法 |
| JP6539959B2 (ja) * | 2014-08-28 | 2019-07-10 | 株式会社Sumco | エピタキシャルシリコンウェーハおよびその製造方法、ならびに、固体撮像素子の製造方法 |
| JP6137165B2 (ja) | 2014-12-25 | 2017-05-31 | 株式会社Sumco | 半導体エピタキシャルウェーハの製造方法および固体撮像素子の製造方法 |
| JP6354993B2 (ja) * | 2015-04-03 | 2018-07-11 | 信越半導体株式会社 | シリコンウェーハ及びシリコンウェーハの製造方法 |
| US10026843B2 (en) * | 2015-11-30 | 2018-07-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fin structure of semiconductor device, manufacturing method thereof, and manufacturing method of active region of semiconductor device |
| JP6459948B2 (ja) * | 2015-12-15 | 2019-01-30 | 株式会社Sumco | 半導体エピタキシャルウェーハの製造方法および固体撮像素子の製造方法 |
| JP6759626B2 (ja) * | 2016-02-25 | 2020-09-23 | 株式会社Sumco | エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ |
| JP2017201647A (ja) * | 2016-05-02 | 2017-11-09 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP6737066B2 (ja) * | 2016-08-22 | 2020-08-05 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法、エピタキシャルシリコンウェーハ、及び固体撮像素子の製造方法 |
| JP6327393B1 (ja) * | 2017-02-28 | 2018-05-23 | 株式会社Sumco | エピタキシャルシリコンウェーハの不純物ゲッタリング能力の評価方法及びエピタキシャルシリコンウェーハ |
| JP6787268B2 (ja) * | 2017-07-20 | 2020-11-18 | 株式会社Sumco | 半導体エピタキシャルウェーハおよびその製造方法、ならびに固体撮像素子の製造方法 |
| JP2019080008A (ja) * | 2017-10-26 | 2019-05-23 | 信越半導体株式会社 | 基板の熱処理方法 |
| JP6801682B2 (ja) * | 2018-02-27 | 2020-12-16 | 株式会社Sumco | 半導体エピタキシャルウェーハの製造方法及び半導体デバイスの製造方法 |
| JP6930459B2 (ja) * | 2018-03-01 | 2021-09-01 | 株式会社Sumco | 半導体エピタキシャルウェーハの製造方法 |
| KR102261633B1 (ko) * | 2019-02-01 | 2021-06-04 | 에스케이실트론 주식회사 | 에피택셜웨이퍼의 금속오염분석방법 |
| JP6988843B2 (ja) * | 2019-02-22 | 2022-01-05 | 株式会社Sumco | 半導体エピタキシャルウェーハ及びその製造方法 |
| JP2021072435A (ja) * | 2019-10-25 | 2021-05-06 | キヤノン株式会社 | 半導体装置および半導体装置の製造方法 |
| JP7259791B2 (ja) * | 2020-03-25 | 2023-04-18 | 株式会社Sumco | シリコンウェーハへのクラスターイオン注入による白傷欠陥低減効果の評価方法及びエピタキシャルシリコンウェーハの製造方法 |
| US20230360962A1 (en) * | 2022-05-03 | 2023-11-09 | Newport Fab, LLC dba Tower Semiconductor Newport Beach | SOI Structures with Carbon in Body Regions for Improved RF-SOI Switches |
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| TW201013753A (en) * | 2008-08-06 | 2010-04-01 | Sumco Corp | Epitaxy silicon wafer and fabricating method thereof |
| JP2012059849A (ja) * | 2010-09-08 | 2012-03-22 | Shin Etsu Handotai Co Ltd | シリコンエピタキシャルウェーハおよびシリコンエピタキシャルウェーハの製造方法 |
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| JP4016371B2 (ja) * | 1999-11-10 | 2007-12-05 | 信越半導体株式会社 | シリコンエピタキシャルウェーハの製造方法 |
| JP2006193800A (ja) | 2005-01-14 | 2006-07-27 | Canon Inc | 硬質炭素膜の成膜方法及び成膜装置 |
| KR100654354B1 (ko) | 2005-07-25 | 2006-12-08 | 삼성전자주식회사 | 게더링 기능을 가지는 저결함 에피택셜 반도체 기판, 이를이용한 이미지 센서 및 이의 제조 방법 |
| KR101455404B1 (ko) * | 2005-12-09 | 2014-10-27 | 세미이큅, 인코포레이티드 | 탄소 클러스터의 주입에 의한 반도체 디바이스의 제조를위한 시스템 및 방법 |
| JP2008311418A (ja) * | 2007-06-14 | 2008-12-25 | Shin Etsu Handotai Co Ltd | エピタキシャルウェーハおよびエピタキシャルウェーハの製造方法 |
| JP5099023B2 (ja) | 2009-01-27 | 2012-12-12 | 信越半導体株式会社 | エピタキシャルウエーハの製造方法及び固体撮像素子の製造方法 |
| JP2011151318A (ja) * | 2010-01-25 | 2011-08-04 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
| FR2961013B1 (fr) * | 2010-06-03 | 2013-05-17 | Commissariat Energie Atomique | Procede pour eliminer des impuretes residuelles extrinseques dans un substrat en zno ou en znmgo de type n, et pour realiser un dopage de type p de ce substrat. |
| JP2011253983A (ja) * | 2010-06-03 | 2011-12-15 | Disco Abrasive Syst Ltd | シリコンウェーハへのゲッタリング層付与方法 |
| US9263271B2 (en) * | 2012-10-25 | 2016-02-16 | Infineon Technologies Ag | Method for processing a semiconductor carrier, a semiconductor chip arrangement and a method for manufacturing a semiconductor device |
-
2012
- 2012-11-13 JP JP2012249731A patent/JP5799936B2/ja active Active
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2013
- 2013-11-11 KR KR1020157013183A patent/KR101669603B1/ko active Active
- 2013-11-11 CN CN201380059278.XA patent/CN104781919B/zh active Active
- 2013-11-11 WO PCT/JP2013/006610 patent/WO2014076921A1/ja not_active Ceased
- 2013-11-11 DE DE112013005401.9T patent/DE112013005401T5/de active Pending
- 2013-11-11 US US14/442,355 patent/US20160181311A1/en not_active Abandoned
- 2013-11-12 TW TW102141071A patent/TWI514558B/zh active
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2019
- 2019-12-17 US US16/717,722 patent/US20200127043A1/en not_active Abandoned
-
2024
- 2024-03-19 US US18/609,418 patent/US20240282801A1/en active Pending
Patent Citations (4)
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| US5734195A (en) * | 1993-03-30 | 1998-03-31 | Sony Corporation | Semiconductor wafer for epitaxially grown devices having a sub-surface getter region |
| TW200816255A (en) * | 2006-06-13 | 2008-04-01 | Semequip Inc | Ion beam apparatus for ion implantation |
| TW201013753A (en) * | 2008-08-06 | 2010-04-01 | Sumco Corp | Epitaxy silicon wafer and fabricating method thereof |
| JP2012059849A (ja) * | 2010-09-08 | 2012-03-22 | Shin Etsu Handotai Co Ltd | シリコンエピタキシャルウェーハおよびシリコンエピタキシャルウェーハの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20240282801A1 (en) | 2024-08-22 |
| KR20150066597A (ko) | 2015-06-16 |
| CN104781919B (zh) | 2018-03-27 |
| WO2014076921A1 (ja) | 2014-05-22 |
| US20160181311A1 (en) | 2016-06-23 |
| JP2014099482A (ja) | 2014-05-29 |
| US20200127043A1 (en) | 2020-04-23 |
| JP5799936B2 (ja) | 2015-10-28 |
| TW201423969A (zh) | 2014-06-16 |
| DE112013005401T5 (de) | 2015-07-30 |
| KR101669603B1 (ko) | 2016-10-26 |
| CN104781919A (zh) | 2015-07-15 |
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