TWI511242B - 半導體模組及半導體裝置 - Google Patents

半導體模組及半導體裝置 Download PDF

Info

Publication number
TWI511242B
TWI511242B TW102110617A TW102110617A TWI511242B TW I511242 B TWI511242 B TW I511242B TW 102110617 A TW102110617 A TW 102110617A TW 102110617 A TW102110617 A TW 102110617A TW I511242 B TWI511242 B TW I511242B
Authority
TW
Taiwan
Prior art keywords
semiconductor module
semiconductor
molding resin
semiconductor element
control substrate
Prior art date
Application number
TW102110617A
Other languages
English (en)
Other versions
TW201351577A (zh
Inventor
Yuki Kawauchi
Kiyofumi Kitai
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of TW201351577A publication Critical patent/TW201351577A/zh
Application granted granted Critical
Publication of TWI511242B publication Critical patent/TWI511242B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/16Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/552Protection against radiation, e.g. light or electromagnetic waves
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334Auxiliary members in encapsulations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/162Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00Constructional details common to different types of electric apparatus
    • H05K7/14Mounting supporting structure in casing or on frame or rack
    • H05K7/1422Printed circuit boards receptacles, e.g. stacked structures, electronic circuit modules or box like frames
    • H05K7/1427Housings
    • H05K7/1432Housings specially adapted for power drive units or power converters
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00Constructional details common to different types of electric apparatus
    • H05K7/14Mounting supporting structure in casing or on frame or rack
    • H05K7/1422Printed circuit boards receptacles, e.g. stacked structures, electronic circuit modules or box like frames
    • H05K7/1427Housings
    • H05K7/1432Housings specially adapted for power drive units or power converters
    • H05K7/14322Housings specially adapted for power drive units or power converters wherein the control and power circuits of a power converter are arranged within the same casing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/1026Compound semiconductors
    • H01L2924/1027IV
    • H01L2924/10272Silicon Carbide [SiC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/1026Compound semiconductors
    • H01L2924/1032III-V
    • H01L2924/1033Gallium nitride [GaN]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

半導體模組及半導體裝置
本發明係關於一種以成形樹脂將半導體元件連同控制基板一齊封裝的半導體模組及使用該半導體模組的半導體裝置。
至今為止,已知有一種以成形樹脂將半導體元件連同控制基板一齊封裝以達成使尺寸小型化的半導體模組(例如參照專利文獻1)。如此的半導體模組,有用以作為固定於作為固定對象之底板的半導體裝置的情形。為了將半導體模組固定於底板而於成形樹脂形成螺絲孔。
[先前技術文獻] [專利文獻]
[專利文獻1]日本專利公開公報特開2006-54245
然而,於成形樹脂所形成的固定用的螺絲孔,必須有某種程度的尺寸。因此,用以形成螺絲孔的領 域設於成形樹脂部分,使得半導體模組的小型化受到限制。另外,隔著成形樹脂以螺絲來固定的情況下,因長期地對於成形樹脂施以負荷,因此必須顧慮潛變(creep)現象所造成的變形。
本發明係有鑑於此而完成者,其目的在於製得達成減輕施於成形樹脂的負荷,並達成進一步地小型化,且可固定於固定對象的半導體模組。
為了解決上述問題,達成目的,本發明提供一種半導體模組,該半導體模組具備半導體元件、載置半導體元件之載置框、安裝有控制半導體元件的控制零件之控制基板、以及將半導體元件、載置框、及控制基板整體封裝之成形樹脂,其中控制基板設有一固定基部,該固定基部係露出成形樹脂,以使半導體模組固定於固定對象。
本發明相關之半導體模組係於控制基板設置固定基部,因而產生所宣稱之達成減輕施於成形樹脂的負荷,並達成進一步地小型化,且可固定於固定對象的效果。
1‧‧‧半導體元件
2‧‧‧引線架(載置框)
3‧‧‧絕緣片
4‧‧‧屏蔽板(無隙電路圖樣)
5‧‧‧控制基板
5a‧‧‧固定基部
6‧‧‧散熱零件
7‧‧‧半導體模組
8‧‧‧成形樹脂
9‧‧‧底板(固定對象)
10‧‧‧螺絲孔
11‧‧‧螺絲
12‧‧‧接地線
13‧‧‧間隔物
14‧‧‧控制零件
20‧‧‧半導體裝置
第1圖係顯示本發明的實施型態相關之半導體裝置的概略構成的平面圖。
第2圖係沿著第1圖中所示的A-A線的箭號方向所 見的剖面圖。
以下根據圖式,詳細說明本發明的實施型態相關之半導體模組及半導體裝置。又,本發明並非依據此實施型態而受到限定。
第一實施型態
第1圖係顯示本發明的實施型態相關之半導體裝置的概略構成的平面圖。第2圖係沿著第1圖中所示的A-A線的箭號方向所見的剖面圖。半導體裝置20係具備半導體模組7與底板(固定對象)9,半導體模組7係固定於底板9。半導體模組7係如第2圖所示,具備半導體元件1、引線架(載置框)2、絕緣片3、屏蔽板(shield)4、控制基板5、散熱零件6、以及成形樹脂8。
半導體元件1係載置於引線架(lead frame)2上。引線架2係其一部分露出成形樹脂8的外部,與外部配線(未圖示)等連接。半導體元件1係藉由引線架2與外部配線連接。又,載置半導體元件1的對象,不限於與外部配線連接的引線架2,若為可確保半導體元件1載置場所的構件,則亦可為其他構件。
於引線架2的下部隔著絕緣片3設置散熱零件6。散熱零件6係導熱性高的構件,例如用金屬所構成。於半導體元件1及引線架2的上方設置控制基板5。於控制基板5安裝用以控制半導體元件的控制零件14。於控制基板5與半導體元件1之間設置屏蔽板4。本實施型態中, 形成於控制基板5之對向半導體元件1一側的一面的無隙電路圖樣係作為屏蔽板4而發揮機能。
成形樹脂8係以被覆半導體元件1、引線架2、絕緣片3、屏蔽板4、控制基板5、以及散熱零件6的方式,以樹脂封裝,構成半導體模組7的外廓。成形樹脂8係以散熱零件的一面露出半導體模組7底面的方式而設置。
控制基板5係以其一部分從半導體模組7露出的方式形成,其露出部分係成為用以將半導體模組7固定於底板9的固定基部5a。本實施型態中,設有四處的固定基部5a,但數量不限於此。
於固定基部5a形成螺絲孔10。半導體模組7係藉由形成於固定基部5a的螺絲孔10,以螺絲11固定於底板9。固定基部5a係以露出於隔著成形樹脂8的一側與另一側的兩側之方式而設置,以使半導體模組7安定地固定於底板9。
半導體模組7係如第2圖所示,因固定於底板9使得其底面密接於底板9。藉此,從半導體模組7的底面露出的散熱零件6係密接於底板9。又,控制基板5的固定基部5a與底板9之間亦可設置間隔物13。間隔物13亦可與底板9一體成形。底板9係由鋁等的金屬形成。底板9係連接於接地線12。
如以上說明,因將半導體模組7密接於底板9,可使得半導體元件1因切換而產生的熱,由底板9散熱。 另外,用以將半導體模組7以螺絲11固定於底板9的螺絲孔10係形成於控制基板5的固定基部5a而非成形樹脂8,因而亦可不於成形樹脂8形成螺絲孔10。因此,因無需於成形樹脂8設置用以形成螺絲孔10的多餘的領域而可達成半導體模組7及半導體裝置20的進一步小型化。另外,因抑制成形樹脂8的樹脂量,可達成成本抑制。另外,因半導體模組7小型化,可達成對於底板9的固定之處的縮小。藉此,可達成將半導體模組7固定於底板9之際的安裝製程、構件等的削減。
另外,因以螺絲11固定半導體模組7而對於螺絲孔10部分長期地施以負荷。若對於成形樹脂8長期地施以負荷,則有因潛變現象而發生變形的情況。本實施型態中,因於控制基板5形成螺絲孔10,因而對於底板9的固定造成的負荷難以施於成形樹脂8。因此,成形樹脂8難以產生潛變現象造成的變形,可達成製品的信賴性的提升。
又,就成形樹脂8而言,相較於採用矽系的凝膠狀樹脂,因採用環氧系的樹脂而更可達成散熱性的提高。藉此,從安裝於控制基板5的控制零件14產生的熱可經由成形樹脂8有效地散熱,而成為可對於控制基板5上的零件的高密度安裝。
另外,若將屏蔽板4與底板9連接,則安裝於半導體元件1、控制基板5等的零件產生的熱可向底板9散逸,因而可提高散熱性,而達成半導體模組7的小型化。 又,本實施型態中,將控制基板5上形成的無隙電路圖樣作為屏蔽板4而露出成形樹脂8,以經由間隔物13連接於底板9。
另外,因成形樹脂8的絕緣耐壓高,因此,即使是閘極信號、閘極驅動電路等異種電源的零件,亦可狹隘地配置安裝間隔、電路圖樣等,實現進一步的零件的高密度安裝。另外,至今為止,如IC等接腳銷的間距狹隘的零件的情況,因發生漏洩,引起電路誤動作,而必須於此部分以HumiSeal(註冊商標)等的被覆劑被覆。本實施型態中,因以絕緣體即樹脂連同控制基板5封裝,形成成形樹脂8,因此,即使是搭載間距狹隘的IC的情況,亦不需要被覆劑。另外,因使電路圖樣間狹隘地配置,高密度安裝小型零件,有助益於控制基板5的小型化,亦可助益於半導體模組的小型化。
另外,若半導體元件1採用SiC、GaN等的寬能隙半導體元件,則可達成電力損失的降低,因晶片尺寸更小型化(例如成為約1/3的晶片尺寸)而可助益於半導體模組7的小型化。另外,因半導體元件1的耐熱性亦提高,散熱零件6的小型化亦變得可能,因而可達成進一步的小型化。
另外,半導體元件1的切換造成的雜訊係成為控制基板5、其他電子機器等的誤動作的原因。對於半導體元件1採用SiC、GaN等的寬能帶隙(wide band gap)半導體元件的情況,雖然切換雜訊增加,但若於控制基板5形 成作為屏蔽板4的無隙電路圖樣,並電性連接於接地線12,則可使雜訊散逸,抑制控制基板5、其他的電子機器等的誤動作。本實施型態中,屏蔽板4接觸於螺絲11,以使屏蔽板4藉由螺絲11、底板9連接於接地線12。
又,本實施型態中,舉出藉由經固定基部5a的螺絲固定,將半導體模組7固定於底板9的例進行說明,但不限於此,若為對於底板9的固定力施於固定基部5a的態樣,則可適用本發明。例如,亦可將固定基部5a向底板9一側曲摺,以固定基部5a本身卡合於底板9的方式來構成。
[產業上的利用可能性]
如以上所述,本發明相關之半導體模組係有用於將控制基板與半導體元件概括地以樹脂封裝之半導體模組。
1‧‧‧半導體元件
2‧‧‧引線架(載置框)
3‧‧‧絕緣片
4‧‧‧屏蔽板(無隙電路圖樣)
5‧‧‧控制基板
5a‧‧‧固定基部
6‧‧‧散熱零件
7‧‧‧半導體模組
8‧‧‧成形樹脂
9‧‧‧底板(固定對象)
10‧‧‧螺絲孔
11‧‧‧螺絲
12‧‧‧接地線
13‧‧‧間隔物
14‧‧‧控制零件
20‧‧‧半導體裝置

Claims (7)

  1. 一種半導體模組,具備:一半導體元件;一載置框,載置前述半導體元件;一控制基板,安裝有控制前述半導體元件的控制零件;以及一成形樹脂,將前述半導體元件、前述載置框、及前述控制基板整體封裝,其中前述控制基板本身的一部分係露出前述成形樹脂,以露出前述成形樹脂的該控制基板本身一部分作為使前述半導體模組固定於固定對象的固定基部。
  2. 如申請專利範圍第1項所述之半導體模組,其中前述固定基部係以至少露出於隔著前述成形樹脂的一側與另一側的方式,設有複數個。
  3. 如申請專利範圍第1項所述之半導體模組,其中前述固定基部係形成有螺絲孔。
  4. 如申請專利範圍第1項所述之半導體模組,其中前述半導體元件係寬能帶隙半導體元件。
  5. 如申請專利範圍第1項所述之半導體模組,其中前述載置框係配置於前述控制基板安裝有前述控制零件之面的相反面之一側,前述控制基板安裝有前述控制零件之面的相反面形成有無隙電路圖樣。
  6. 如申請專利範圍第5項所述之半導體模組,其中前述 無隙電路圖樣係與接地線連接。
  7. 一種半導體裝置,具備:申請專利範圍第1至6項中任一項所述之半導體模組;以及金屬製的底板,作為前述固定對象,前述成形樹脂係因前述半導體模組固定於前述底板而密接於前述底板。
TW102110617A 2012-05-17 2013-03-26 半導體模組及半導體裝置 TWI511242B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2012/062683 WO2013171882A1 (ja) 2012-05-17 2012-05-17 半導体モジュールおよび半導体装置

Publications (2)

Publication Number Publication Date
TW201351577A TW201351577A (zh) 2013-12-16
TWI511242B true TWI511242B (zh) 2015-12-01

Family

ID=49583324

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102110617A TWI511242B (zh) 2012-05-17 2013-03-26 半導體模組及半導體裝置

Country Status (7)

Country Link
US (1) US20150001702A1 (zh)
EP (1) EP2851945A4 (zh)
JP (1) JP5318304B1 (zh)
KR (1) KR101595685B1 (zh)
CN (1) CN104272454A (zh)
TW (1) TWI511242B (zh)
WO (1) WO2013171882A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112014006573T5 (de) * 2014-04-08 2017-02-16 Mitsubishi Electric Corporation Geformtes Modul
US10607300B1 (en) 2015-07-31 2020-03-31 Intuit Inc. Ad hoc electronic messaging using financial transaction data
JP7193730B2 (ja) * 2019-03-26 2022-12-21 三菱電機株式会社 半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010079663A1 (ja) * 2009-01-07 2010-07-15 ソニー株式会社 半導体装置、その製造方法、ミリ波誘電体内伝送装置、その製造方法、およびミリ波誘電体内伝送システム
TW201216418A (en) * 2010-10-04 2012-04-16 Walton Advanced Eng Inc Built-in radio frequency package for reducing interference

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55143054A (en) * 1979-04-25 1980-11-08 Hitachi Ltd Resin sealed semiconductor device
JP4366700B2 (ja) * 1998-10-05 2009-11-18 富士電機デバイステクノロジー株式会社 半導体素子のパッケージの製造方法
JP4185236B2 (ja) * 2000-06-19 2008-11-26 イーストマン コダック カンパニー 固体撮像素子および撮像装置
JP4218193B2 (ja) * 2000-08-24 2009-02-04 三菱電機株式会社 パワーモジュール
US6783592B2 (en) * 2002-10-10 2004-08-31 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Lateral movement of screw dislocations during homoepitaxial growth and devices yielded therefrom free of the detrimental effects of screw dislocations
JP2005039118A (ja) * 2003-07-17 2005-02-10 Mitsubishi Electric Corp 半導体装置
JP4100332B2 (ja) * 2003-11-12 2008-06-11 株式会社デンソー 電子装置およびその製造方法
JP2006054245A (ja) * 2004-08-10 2006-02-23 Mitsubishi Electric Corp 半導体装置
JP4825259B2 (ja) * 2008-11-28 2011-11-30 三菱電機株式会社 電力用半導体モジュール及びその製造方法
JP2010245174A (ja) * 2009-04-02 2010-10-28 Denso Corp 電子制御ユニット及びその製造方法
WO2011010597A1 (ja) * 2009-07-24 2011-01-27 株式会社東芝 窒化珪素製絶縁シートおよびそれを用いた半導体モジュール構造体
JP2011044452A (ja) * 2009-08-19 2011-03-03 Denso Corp 電子装置およびその製造方法
DE102011000374A1 (de) * 2010-01-29 2011-08-04 DENSO CORPORATION, Aichi-pref. Wasserdichte Struktur für Halbleitergehäuse
IT1402168B1 (it) * 2010-06-30 2013-08-28 St Microelectronics Srl Metodo di fabbricazione di un dispositivo elettronico impermeabilizzato e dispositivo elettronico impermeabilizzato
KR101533895B1 (ko) * 2010-09-02 2015-07-03 도요타지도샤가부시키가이샤 반도체 모듈

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010079663A1 (ja) * 2009-01-07 2010-07-15 ソニー株式会社 半導体装置、その製造方法、ミリ波誘電体内伝送装置、その製造方法、およびミリ波誘電体内伝送システム
TW201216418A (en) * 2010-10-04 2012-04-16 Walton Advanced Eng Inc Built-in radio frequency package for reducing interference

Also Published As

Publication number Publication date
KR101595685B1 (ko) 2016-02-18
US20150001702A1 (en) 2015-01-01
JP5318304B1 (ja) 2013-10-16
EP2851945A1 (en) 2015-03-25
TW201351577A (zh) 2013-12-16
WO2013171882A1 (ja) 2013-11-21
KR20140138248A (ko) 2014-12-03
CN104272454A (zh) 2015-01-07
JPWO2013171882A1 (ja) 2016-01-07
EP2851945A4 (en) 2016-01-27

Similar Documents

Publication Publication Date Title
US7511365B2 (en) Thermal enhanced low profile package structure
US7701054B2 (en) Power semiconductor module and method for its manufacture
TWI551198B (zh) 具散熱功能之印刷電路板結構
JP2008091714A (ja) 半導体装置
KR20060051982A (ko) 반도체 장치 및 전자기기
EP3007219B1 (en) Semiconductor module
JP6239147B2 (ja) 半導体パッケージ
JP2008205142A (ja) Cof用配線基板とその製造方法、並びに半導体装置
US9620438B2 (en) Electronic device with heat dissipater
WO2018159453A1 (ja) モジュール
TWI511242B (zh) 半導體模組及半導體裝置
WO2015104834A1 (ja) 電力半導体装置
TWI472275B (zh) 一種使用金屬線路片之電子線路板及其電子封裝模組
JP2017228779A (ja) 光学的封止構造体
KR20180023488A (ko) 반도체 패키지 및 반도체 패키지 제조방법
JP6200693B2 (ja) 電子制御装置
JP6494723B2 (ja) 半導体パッケージ
KR20130015685A (ko) 반도체 패키지 및 이의 제조 방법
KR101234164B1 (ko) 방열성을 향상시킨 반도체 패키지
KR20100002875A (ko) 반도체 패키지
WO2014132897A1 (ja) 半導体装置
KR20080051197A (ko) 반도체 패키지
JP6527777B2 (ja) 半導体装置及びそれを有する実装基板
JP2014053381A (ja) 半導体装置
JP2013207168A (ja) 半導体モジュール

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees