TWI510863B - 真空腔中產生真空的帶電粒子微影設備及方法 - Google Patents

真空腔中產生真空的帶電粒子微影設備及方法 Download PDF

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Publication number
TWI510863B
TWI510863B TW099105114A TW99105114A TWI510863B TW I510863 B TWI510863 B TW I510863B TW 099105114 A TW099105114 A TW 099105114A TW 99105114 A TW99105114 A TW 99105114A TW I510863 B TWI510863 B TW I510863B
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TW
Taiwan
Prior art keywords
chamber
vacuum chamber
charged particle
vacuum
door
Prior art date
Application number
TW099105114A
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English (en)
Chinese (zh)
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TW201044118A (en
Inventor
Sander Baltussen
Boer Guido De
Tijs Frans Teepen
Remco Jager
Jerry Johannes Martinus Peijster
Nieuwstadt Joris Anne Henri Van
Willem Maurits Weeda
Veen Alexander Hendrik Vincent Van
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Mapper Lithography Ip Bv
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Application filed by Mapper Lithography Ip Bv filed Critical Mapper Lithography Ip Bv
Publication of TW201044118A publication Critical patent/TW201044118A/zh
Application granted granted Critical
Publication of TWI510863B publication Critical patent/TWI510863B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/16—Vessels; Containers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/86—Vessels; Containers; Vacuum locks
    • H01J29/865—Vacuum locks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/16—Vessels; Containers
    • H01J37/165—Means associated with the vessel for preventing the generation of or for shielding unwanted radiation, e.g. X-rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/16—Vessels

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW099105114A 2009-02-22 2010-02-22 真空腔中產生真空的帶電粒子微影設備及方法 TWI510863B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15441509P 2009-02-22 2009-02-22

Publications (2)

Publication Number Publication Date
TW201044118A TW201044118A (en) 2010-12-16
TWI510863B true TWI510863B (zh) 2015-12-01

Family

ID=42025730

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099105114A TWI510863B (zh) 2009-02-22 2010-02-22 真空腔中產生真空的帶電粒子微影設備及方法

Country Status (7)

Country Link
US (1) US20110042579A1 (https=)
EP (1) EP2399270B1 (https=)
JP (1) JP5680557B2 (https=)
KR (1) KR101545193B1 (https=)
CN (1) CN102422380A (https=)
TW (1) TWI510863B (https=)
WO (1) WO2010094719A1 (https=)

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US10008362B1 (en) 2016-12-27 2018-06-26 Mapper Lithography Ip B.V. Optical fiber feedthrough device and fiber path arrangement
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Also Published As

Publication number Publication date
JP2012518897A (ja) 2012-08-16
KR20110131221A (ko) 2011-12-06
TW201044118A (en) 2010-12-16
WO2010094719A1 (en) 2010-08-26
EP2399270B1 (en) 2013-06-12
JP5680557B2 (ja) 2015-03-04
CN102422380A (zh) 2012-04-18
US20110042579A1 (en) 2011-02-24
KR101545193B1 (ko) 2015-08-18
EP2399270A1 (en) 2011-12-28

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