JP5680557B2 - 荷電粒子リソグラフィ装置 - Google Patents

荷電粒子リソグラフィ装置 Download PDF

Info

Publication number
JP5680557B2
JP5680557B2 JP2011550551A JP2011550551A JP5680557B2 JP 5680557 B2 JP5680557 B2 JP 5680557B2 JP 2011550551 A JP2011550551 A JP 2011550551A JP 2011550551 A JP2011550551 A JP 2011550551A JP 5680557 B2 JP5680557 B2 JP 5680557B2
Authority
JP
Japan
Prior art keywords
chamber
charged particle
vacuum chamber
door
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011550551A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012518897A (ja
JP2012518897A5 (https=
Inventor
デ・ボエル、グイド
バルトゥセン、サンデル
ヤゲル、レムコ
ペイーステル、イェリー・ヨハンネンス・マルティヌス
テーペン、ティース・フランス
ファン・ニュースタット、ヨリス・アンネ・ヘンリ
ウェーダ、ウィレム・マウリトス
ファン・フェーン、アレクサンデル・ヘンドリク・フィンセント
Original Assignee
マッパー・リソグラフィー・アイピー・ビー．ブイ．
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by マッパー・リソグラフィー・アイピー・ビー．ブイ． filed Critical マッパー・リソグラフィー・アイピー・ビー．ブイ．
Publication of JP2012518897A publication Critical patent/JP2012518897A/ja
Publication of JP2012518897A5 publication Critical patent/JP2012518897A5/ja
Application granted granted Critical
Publication of JP5680557B2 publication Critical patent/JP5680557B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/16—Vessels; Containers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/86—Vessels; Containers; Vacuum locks
    • H01J29/865—Vacuum locks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/16—Vessels; Containers
    • H01J37/165—Means associated with the vessel for preventing the generation of or for shielding unwanted radiation, e.g. X-rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/16—Vessels

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2011550551A 2009-02-22 2010-02-17 荷電粒子リソグラフィ装置 Expired - Fee Related JP5680557B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15441509P 2009-02-22 2009-02-22
US61/154,415 2009-02-22
PCT/EP2010/052004 WO2010094719A1 (en) 2009-02-22 2010-02-17 Charged particle lithography apparatus and method of generating vacuum in a vacuum chamber

Publications (3)

Publication Number Publication Date
JP2012518897A JP2012518897A (ja) 2012-08-16
JP2012518897A5 JP2012518897A5 (https=) 2013-04-04
JP5680557B2 true JP5680557B2 (ja) 2015-03-04

Family

ID=42025730

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011550551A Expired - Fee Related JP5680557B2 (ja) 2009-02-22 2010-02-17 荷電粒子リソグラフィ装置

Country Status (7)

Country Link
US (1) US20110042579A1 (https=)
EP (1) EP2399270B1 (https=)
JP (1) JP5680557B2 (https=)
KR (1) KR101545193B1 (https=)
CN (1) CN102422380A (https=)
TW (1) TWI510863B (https=)
WO (1) WO2010094719A1 (https=)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8314483B2 (en) * 2009-01-26 2012-11-20 Taiwan Semiconductor Manufacturing Company, Ltd. On-chip heat spreader
US8586949B2 (en) 2010-11-13 2013-11-19 Mapper Lithography Ip B.V. Charged particle lithography system with intermediate chamber
EP2676168B1 (en) 2011-02-16 2018-09-12 Mapper Lithography IP B.V. System for magnetic shielding
NL2007604C2 (en) * 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
NL2007392C2 (en) * 2011-09-12 2013-03-13 Mapper Lithography Ip Bv Assembly for providing an aligned stack of two or more modules and a lithography system or a microscopy system comprising such an assembly.
NL2006868C2 (en) 2011-05-30 2012-12-03 Mapper Lithography Ip Bv Charged particle multi-beamlet apparatus.
JP2014530478A (ja) 2011-09-09 2014-11-17 マッパー・リソグラフィー・アイピー・ビー．ブイ． 除振モジュール及び基板処理システム
CN103797420A (zh) * 2011-09-12 2014-05-14 迈普尔平版印刷Ip有限公司 具有基底板的真空腔室
CN106933063B (zh) * 2012-03-20 2019-01-18 迈普尔平版印刷Ip有限公司 电子射束光刻系统
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
CN104428866A (zh) * 2012-05-14 2015-03-18 迈普尔平版印刷Ip有限公司 带电粒子光刻系统和射束产生器
JP2014082327A (ja) * 2012-10-16 2014-05-08 Canon Inc 照射装置、描画装置及び物品の製造方法
NL2010624C2 (en) 2013-04-08 2014-10-09 Mapper Lithography Ip Bv Cabinet for electronic equipment.
CN108962708A (zh) * 2013-11-14 2018-12-07 迈普尔平版印刷Ip有限公司 电极堆栈布置
NL2014430A (en) * 2014-03-13 2015-11-02 Asml Netherlands Bv Radiation Source.
JP6653125B2 (ja) * 2014-05-23 2020-02-26 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
EP3155630A4 (en) 2014-06-13 2018-01-24 Intel Corporation Ebeam staggered beam aperture array
US9897908B2 (en) 2014-06-13 2018-02-20 Intel Corporation Ebeam three beam aperture array
EP3155647A4 (en) 2014-06-13 2018-01-24 Intel Corporation Ebeam universal cutter
GB201414395D0 (en) 2014-08-13 2014-09-24 Nikon Metrology Nv X-ray apparatus
US10096450B2 (en) 2015-12-28 2018-10-09 Mapper Lithography Ip B.V. Control system and method for lithography apparatus
US10559408B2 (en) 2016-12-27 2020-02-11 Asml Netherlands B.V. Feedthrough device and signal conductor path arrangement
US10008362B1 (en) 2016-12-27 2018-06-26 Mapper Lithography Ip B.V. Optical fiber feedthrough device and fiber path arrangement
EP3610493A4 (en) * 2017-04-11 2021-07-07 ASML Netherlands B.V. CHARGE PARTICLE SOURCE MODULE
JP6934742B2 (ja) * 2017-04-19 2021-09-15 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
EP3734301A1 (en) * 2019-05-03 2020-11-04 Afore Oy Cryogenic wafer prober with movable thermal radiation shield
EP3734303B1 (en) * 2019-05-03 2024-04-03 Afore Oy Cryogenic probe station with loading assembly
JP7391735B2 (ja) * 2019-09-25 2023-12-05 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置
KR20230008209A (ko) 2020-06-10 2023-01-13 에이에스엠엘 네델란즈 비.브이. 하전 입자 장치용 교체 가능 모듈

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3157308A (en) 1961-09-05 1964-11-17 Clark Mfg Co J L Canister type container and method of making the same
US3159408A (en) 1961-10-05 1964-12-01 Grace W R & Co Chuck
US3885932A (en) * 1974-01-10 1975-05-27 Super Products Corp Dust filtration system
GB2159322A (en) * 1984-05-18 1985-11-27 Philips Electronic Associated Electron image projector
JPS60255291A (ja) * 1984-05-31 1985-12-16 Mitsubishi Electric Corp 電子ビ−ム加工装置
US4524308A (en) 1984-06-01 1985-06-18 Sony Corporation Circuits for accomplishing electron beam convergence in color cathode ray tubes
JPS6383756U (https=) * 1986-11-20 1988-06-01
US4833362A (en) * 1988-04-19 1989-05-23 Orchid One Encapsulated high brightness electron beam source and system
US4923544A (en) * 1988-11-02 1990-05-08 Tetrahex, Inc. Method of manufacturing a tetrahexaconal truss structure
US6023068A (en) * 1991-05-30 2000-02-08 Canon Kabushiki Kaisha Semiconductor device manufacturing apparatus
JP3294242B2 (ja) * 1991-07-04 2002-06-24 株式会社東芝 荷電ビーム照射方法
WO1994025880A1 (en) 1993-04-30 1994-11-10 Board Of Regents, The University Of Texas System Megavoltage scanning imager and method for its use
JP2655474B2 (ja) * 1993-12-17 1997-09-17 日本電気株式会社 電子線直接描画方法及びその装置
JPH0936198A (ja) 1995-07-19 1997-02-07 Hitachi Ltd 真空処理装置およびそれを用いた半導体製造ライン
EP0766405A1 (en) 1995-09-29 1997-04-02 STMicroelectronics S.r.l. Successive approximation register without redundancy
JPH10223512A (ja) * 1997-02-10 1998-08-21 Nikon Corp 電子ビーム投影露光装置
US6744268B2 (en) * 1998-08-27 2004-06-01 The Micromanipulator Company, Inc. High resolution analytical probe station
US6943351B2 (en) * 2000-02-19 2005-09-13 Multibeam Systems, Inc. Multi-column charged particle optics assembly
DE60041326D1 (de) * 2000-05-12 2009-02-26 Antonio Giovannetti Federantriebsvorrichtung für Türen, mit regelbarem Hebelarm der Feder
JP2002083561A (ja) * 2000-09-06 2002-03-22 Nikon Corp 電子銃及び電子光学鏡筒
WO2002037526A1 (en) * 2000-11-02 2002-05-10 Ebara Corporation Electron beam apparatus and method for manufacturing semiconductor device comprising the apparatus
US20020145113A1 (en) * 2001-04-09 2002-10-10 Applied Materials, Inc. Optical signal transmission for electron beam imaging apparatus
JP2002313270A (ja) * 2001-04-16 2002-10-25 Shimadzu Corp 高真空電子線装置及びその排気方法
FI20020025A0 (fi) * 2002-01-08 2002-01-08 4 D Neuroimaging Oy Komposiittiseinõrakenne parannetun magneettisuojauksen aikaansaamiseksi
US6768125B2 (en) * 2002-01-17 2004-07-27 Ims Nanofabrication, Gmbh Maskless particle-beam system for exposing a pattern on a substrate
ATE538412T1 (de) 2002-10-25 2012-01-15 Mapper Lithography Ip Bv Lithographisches system
AU2003276779A1 (en) 2002-10-30 2004-05-25 Mapper Lithography Ip B.V. Electron beam exposure system
KR101068607B1 (ko) 2003-03-10 2011-09-30 마퍼 리쏘그라피 아이피 비.브이. 복수 개의 빔렛 발생 장치
ATE524822T1 (de) 2003-05-28 2011-09-15 Mapper Lithography Ip Bv Belichtungsverfahren für strahlen aus geladenen teilchen
JP2005005393A (ja) * 2003-06-10 2005-01-06 Canon Inc ステージ装置、露光装置、およびデバイス製造方法
JP4074224B2 (ja) * 2003-06-26 2008-04-09 住友重機械工業株式会社 真空装置及び電子ビーム近接露光装置
ATE381728T1 (de) 2003-07-30 2008-01-15 Mapper Lithography Ip Bv Modulator-schaltkreise
EP1592152A1 (en) * 2004-04-30 2005-11-02 Faculté Polytechnique de Mons Method for characterising an optical fibre link
DE602004031817D1 (de) * 2004-01-21 2011-04-28 Integrated Circuit Testing Strahlenoptische Komponente mit einer teilchenoptischen Linse
US7242456B2 (en) * 2004-05-26 2007-07-10 Asml Holdings N.V. System and method utilizing a lithography tool having modular illumination, pattern generator, and projection optics portions
JP2006114385A (ja) * 2004-10-15 2006-04-27 Toshiba Corp 電子ビーム装置
JP3929459B2 (ja) * 2004-11-11 2007-06-13 株式会社日立ハイテクノロジーズ 荷電粒子線露光装置
US7819079B2 (en) 2004-12-22 2010-10-26 Applied Materials, Inc. Cartesian cluster tool configuration for lithography type processes
JP2006203107A (ja) * 2005-01-24 2006-08-03 Toshiba Corp 荷電ビーム描画装置
US20060181689A1 (en) * 2005-02-14 2006-08-17 Nikon Corporation Lithographic-optical systems including isolatable vacuum chambers, and lithography apparatus comprising same
WO2007008792A2 (en) * 2005-07-08 2007-01-18 Nexgensemi Holdings Corporation Apparatus and method for controlled particle beam manufacturing
US7709815B2 (en) 2005-09-16 2010-05-04 Mapper Lithography Ip B.V. Lithography system and projection method
EP1798751A1 (en) * 2005-12-13 2007-06-20 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Protecting aperture for charged particle emitter
US7649613B2 (en) * 2006-03-03 2010-01-19 Asml Netherlands B.V. Lithographic apparatus, method of controlling a component of a lithographic apparatus and device manufacturing method
JP2007287546A (ja) * 2006-04-19 2007-11-01 Tokyo Seimitsu Co Ltd 真空容器及び電子線装置
JP4936368B2 (ja) * 2006-11-21 2012-05-23 株式会社リコー 真空チャンバ及び電子線描画装置
US7903866B2 (en) * 2007-03-29 2011-03-08 Asml Netherlands B.V. Measurement system, lithographic apparatus and method for measuring a position dependent signal of a movable object
US20090079217A1 (en) * 2007-09-26 2009-03-26 Nikesh Bakshi Powered Tailgate Ramp
WO2009099972A2 (en) * 2008-01-31 2009-08-13 D-Wave Systems Inc. Magnetic vacuum systems and devices for use with superconducting-based computing systems
WO2016158421A1 (ja) 2015-04-03 2016-10-06 株式会社日立ハイテクノロジーズ 光量検出装置、それを用いた免疫分析装置および荷電粒子線装置

Also Published As

Publication number Publication date
JP2012518897A (ja) 2012-08-16
KR20110131221A (ko) 2011-12-06
TW201044118A (en) 2010-12-16
WO2010094719A1 (en) 2010-08-26
EP2399270B1 (en) 2013-06-12
CN102422380A (zh) 2012-04-18
US20110042579A1 (en) 2011-02-24
TWI510863B (zh) 2015-12-01
KR101545193B1 (ko) 2015-08-18
EP2399270A1 (en) 2011-12-28

Similar Documents

Publication Publication Date Title
JP5680557B2 (ja) 荷電粒子リソグラフィ装置
JP5539406B2 (ja) リソグラフィマシン及び基板処理構成体
JP5762981B2 (ja) 荷電粒子リソグラフィ装置と、真空チャンバー内の真空を生成する方法
RU2579533C2 (ru) Литографическая система и способ обработки подложек в такой литографической системе
TWI486723B (zh) 在微影系統中處理基板的方法
NL2010797A (en) Charged particle lithography system and beam generator.
TWI471891B (zh) 帶電粒子微影機器及基板處理系統
US12609265B2 (en) Actuator arrangement and electron-optical column
JP2006245365A (ja) 真空処理装置
JP2024544504A (ja) 荷電粒子装置のためのプラットフォーム及び荷電粒子装置内のコンポーネント
KR100344150B1 (ko) 전자빔을 이용한 음극선관의 연속노광장치

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130218

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130218

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140130

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140212

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140512

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140519

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140612

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20141209

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150107

R150 Certificate of patent or registration of utility model

Ref document number: 5680557

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: R3D02

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees