CN102422380A - 带电粒子微影设备及真空腔室中产生真空的方法 - Google Patents

带电粒子微影设备及真空腔室中产生真空的方法 Download PDF

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Publication number
CN102422380A
CN102422380A CN2010800178733A CN201080017873A CN102422380A CN 102422380 A CN102422380 A CN 102422380A CN 2010800178733 A CN2010800178733 A CN 2010800178733A CN 201080017873 A CN201080017873 A CN 201080017873A CN 102422380 A CN102422380 A CN 102422380A
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CN
China
Prior art keywords
chamber
door
vacuum
vacuum chamber
charged particle
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Pending
Application number
CN2010800178733A
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English (en)
Chinese (zh)
Inventor
G.德波尔
S.巴尔图森
R.贾格
J.J.M.佩耶斯特
T.F.提彭
J.A.H.范尼夫斯塔特
W.M.维达
A.H.V.范维恩
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Mapper Lithopraphy IP BV
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Mapper Lithopraphy IP BV
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Filing date
Publication date
Application filed by Mapper Lithopraphy IP BV filed Critical Mapper Lithopraphy IP BV
Publication of CN102422380A publication Critical patent/CN102422380A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/16—Vessels; Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/86—Vessels; Containers; Vacuum locks
    • H01J29/865—Vacuum locks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/16—Vessels; Containers
    • H01J37/165—Means associated with the vessel for preventing the generation of or for shielding unwanted radiation, e.g. X-rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/16—Vessels

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN2010800178733A 2009-02-22 2010-02-17 带电粒子微影设备及真空腔室中产生真空的方法 Pending CN102422380A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15441509P 2009-02-22 2009-02-22
US61/154,415 2009-02-22
PCT/EP2010/052004 WO2010094719A1 (en) 2009-02-22 2010-02-17 Charged particle lithography apparatus and method of generating vacuum in a vacuum chamber

Publications (1)

Publication Number Publication Date
CN102422380A true CN102422380A (zh) 2012-04-18

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800178733A Pending CN102422380A (zh) 2009-02-22 2010-02-17 带电粒子微影设备及真空腔室中产生真空的方法

Country Status (7)

Country Link
US (1) US20110042579A1 (https=)
EP (1) EP2399270B1 (https=)
JP (1) JP5680557B2 (https=)
KR (1) KR101545193B1 (https=)
CN (1) CN102422380A (https=)
TW (1) TWI510863B (https=)
WO (1) WO2010094719A1 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104428866A (zh) * 2012-05-14 2015-03-18 迈普尔平版印刷Ip有限公司 带电粒子光刻系统和射束产生器
CN110326176A (zh) * 2016-12-27 2019-10-11 Asml荷兰有限公司 馈通设备和信号导体路径装置
TWI692794B (zh) * 2017-04-19 2020-05-01 日商紐富來科技股份有限公司 多帶電粒子束描繪裝置及多帶電粒子束描繪方法
US10916362B2 (en) 2016-12-27 2021-02-09 Asml Netherlands B.V. Feedthrough device and signal conductor path arrangement
CN114937585A (zh) * 2017-04-11 2022-08-23 Asml荷兰有限公司 带电粒子源模块

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8314483B2 (en) * 2009-01-26 2012-11-20 Taiwan Semiconductor Manufacturing Company, Ltd. On-chip heat spreader
US8586949B2 (en) 2010-11-13 2013-11-19 Mapper Lithography Ip B.V. Charged particle lithography system with intermediate chamber
EP2676168B1 (en) 2011-02-16 2018-09-12 Mapper Lithography IP B.V. System for magnetic shielding
NL2007604C2 (en) * 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
NL2007392C2 (en) * 2011-09-12 2013-03-13 Mapper Lithography Ip Bv Assembly for providing an aligned stack of two or more modules and a lithography system or a microscopy system comprising such an assembly.
NL2006868C2 (en) 2011-05-30 2012-12-03 Mapper Lithography Ip Bv Charged particle multi-beamlet apparatus.
JP2014530478A (ja) 2011-09-09 2014-11-17 マッパー・リソグラフィー・アイピー・ビー．ブイ． 除振モジュール及び基板処理システム
CN103797420A (zh) * 2011-09-12 2014-05-14 迈普尔平版印刷Ip有限公司 具有基底板的真空腔室
CN106933063B (zh) * 2012-03-20 2019-01-18 迈普尔平版印刷Ip有限公司 电子射束光刻系统
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
JP2014082327A (ja) * 2012-10-16 2014-05-08 Canon Inc 照射装置、描画装置及び物品の製造方法
NL2010624C2 (en) 2013-04-08 2014-10-09 Mapper Lithography Ip Bv Cabinet for electronic equipment.
CN108962708A (zh) * 2013-11-14 2018-12-07 迈普尔平版印刷Ip有限公司 电极堆栈布置
NL2014430A (en) * 2014-03-13 2015-11-02 Asml Netherlands Bv Radiation Source.
JP6653125B2 (ja) * 2014-05-23 2020-02-26 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
EP3155630A4 (en) 2014-06-13 2018-01-24 Intel Corporation Ebeam staggered beam aperture array
US9897908B2 (en) 2014-06-13 2018-02-20 Intel Corporation Ebeam three beam aperture array
EP3155647A4 (en) 2014-06-13 2018-01-24 Intel Corporation Ebeam universal cutter
GB201414395D0 (en) 2014-08-13 2014-09-24 Nikon Metrology Nv X-ray apparatus
US10096450B2 (en) 2015-12-28 2018-10-09 Mapper Lithography Ip B.V. Control system and method for lithography apparatus
EP3734301A1 (en) * 2019-05-03 2020-11-04 Afore Oy Cryogenic wafer prober with movable thermal radiation shield
EP3734303B1 (en) * 2019-05-03 2024-04-03 Afore Oy Cryogenic probe station with loading assembly
JP7391735B2 (ja) * 2019-09-25 2023-12-05 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置
KR20230008209A (ko) 2020-06-10 2023-01-13 에이에스엠엘 네델란즈 비.브이. 하전 입자 장치용 교체 가능 모듈

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6023068A (en) * 1991-05-30 2000-02-08 Canon Kabushiki Kaisha Semiconductor device manufacturing apparatus
US20010039762A1 (en) * 2000-05-12 2001-11-15 Antonio Giovannetti Spring operated device for door movement, having an adjustable lever arm of the spring
US20030207475A1 (en) * 2000-11-02 2003-11-06 Ebara Corporation Electron beam apparatus and method of manufacturing semiconductor device using the apparatus
US20040263819A1 (en) * 2003-06-26 2004-12-30 Sumitomo Heavy Industries, Ltd. Airtight processing apparatus, airtight processing method, and electron beam processing apparatus
US20050162249A1 (en) * 2002-01-08 2005-07-28 Elekta Neuromag Oy Wall element for magnetically shielded room and magnetically shielded room
CN1795529A (zh) * 2003-05-28 2006-06-28 迈普尔平版印刷Ip有限公司 带电粒子小射束曝光系统
US20060181689A1 (en) * 2005-02-14 2006-08-17 Nikon Corporation Lithographic-optical systems including isolatable vacuum chambers, and lithography apparatus comprising same
US20060192143A1 (en) * 2005-01-24 2006-08-31 Shinsuke Nishhimura Charged particle beam lithography apparatus and method
US20070290703A1 (en) * 1998-08-27 2007-12-20 The Micromanipulator Company, Inc. High Resolution Analytical Probe Station
US20080230694A1 (en) * 2004-01-21 2008-09-25 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Beam Optical Component Having a Charged Particle Lens

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3157308A (en) 1961-09-05 1964-11-17 Clark Mfg Co J L Canister type container and method of making the same
US3159408A (en) 1961-10-05 1964-12-01 Grace W R & Co Chuck
US3885932A (en) * 1974-01-10 1975-05-27 Super Products Corp Dust filtration system
GB2159322A (en) * 1984-05-18 1985-11-27 Philips Electronic Associated Electron image projector
JPS60255291A (ja) * 1984-05-31 1985-12-16 Mitsubishi Electric Corp 電子ビ−ム加工装置
US4524308A (en) 1984-06-01 1985-06-18 Sony Corporation Circuits for accomplishing electron beam convergence in color cathode ray tubes
JPS6383756U (https=) * 1986-11-20 1988-06-01
US4833362A (en) * 1988-04-19 1989-05-23 Orchid One Encapsulated high brightness electron beam source and system
US4923544A (en) * 1988-11-02 1990-05-08 Tetrahex, Inc. Method of manufacturing a tetrahexaconal truss structure
JP3294242B2 (ja) * 1991-07-04 2002-06-24 株式会社東芝 荷電ビーム照射方法
WO1994025880A1 (en) 1993-04-30 1994-11-10 Board Of Regents, The University Of Texas System Megavoltage scanning imager and method for its use
JP2655474B2 (ja) * 1993-12-17 1997-09-17 日本電気株式会社 電子線直接描画方法及びその装置
JPH0936198A (ja) 1995-07-19 1997-02-07 Hitachi Ltd 真空処理装置およびそれを用いた半導体製造ライン
EP0766405A1 (en) 1995-09-29 1997-04-02 STMicroelectronics S.r.l. Successive approximation register without redundancy
JPH10223512A (ja) * 1997-02-10 1998-08-21 Nikon Corp 電子ビーム投影露光装置
US6943351B2 (en) * 2000-02-19 2005-09-13 Multibeam Systems, Inc. Multi-column charged particle optics assembly
JP2002083561A (ja) * 2000-09-06 2002-03-22 Nikon Corp 電子銃及び電子光学鏡筒
US20020145113A1 (en) * 2001-04-09 2002-10-10 Applied Materials, Inc. Optical signal transmission for electron beam imaging apparatus
JP2002313270A (ja) * 2001-04-16 2002-10-25 Shimadzu Corp 高真空電子線装置及びその排気方法
US6768125B2 (en) * 2002-01-17 2004-07-27 Ims Nanofabrication, Gmbh Maskless particle-beam system for exposing a pattern on a substrate
ATE538412T1 (de) 2002-10-25 2012-01-15 Mapper Lithography Ip Bv Lithographisches system
AU2003276779A1 (en) 2002-10-30 2004-05-25 Mapper Lithography Ip B.V. Electron beam exposure system
KR101068607B1 (ko) 2003-03-10 2011-09-30 마퍼 리쏘그라피 아이피 비.브이. 복수 개의 빔렛 발생 장치
JP2005005393A (ja) * 2003-06-10 2005-01-06 Canon Inc ステージ装置、露光装置、およびデバイス製造方法
ATE381728T1 (de) 2003-07-30 2008-01-15 Mapper Lithography Ip Bv Modulator-schaltkreise
EP1592152A1 (en) * 2004-04-30 2005-11-02 Faculté Polytechnique de Mons Method for characterising an optical fibre link
US7242456B2 (en) * 2004-05-26 2007-07-10 Asml Holdings N.V. System and method utilizing a lithography tool having modular illumination, pattern generator, and projection optics portions
JP2006114385A (ja) * 2004-10-15 2006-04-27 Toshiba Corp 電子ビーム装置
JP3929459B2 (ja) * 2004-11-11 2007-06-13 株式会社日立ハイテクノロジーズ 荷電粒子線露光装置
US7819079B2 (en) 2004-12-22 2010-10-26 Applied Materials, Inc. Cartesian cluster tool configuration for lithography type processes
WO2007008792A2 (en) * 2005-07-08 2007-01-18 Nexgensemi Holdings Corporation Apparatus and method for controlled particle beam manufacturing
US7709815B2 (en) 2005-09-16 2010-05-04 Mapper Lithography Ip B.V. Lithography system and projection method
EP1798751A1 (en) * 2005-12-13 2007-06-20 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Protecting aperture for charged particle emitter
US7649613B2 (en) * 2006-03-03 2010-01-19 Asml Netherlands B.V. Lithographic apparatus, method of controlling a component of a lithographic apparatus and device manufacturing method
JP2007287546A (ja) * 2006-04-19 2007-11-01 Tokyo Seimitsu Co Ltd 真空容器及び電子線装置
JP4936368B2 (ja) * 2006-11-21 2012-05-23 株式会社リコー 真空チャンバ及び電子線描画装置
US7903866B2 (en) * 2007-03-29 2011-03-08 Asml Netherlands B.V. Measurement system, lithographic apparatus and method for measuring a position dependent signal of a movable object
US20090079217A1 (en) * 2007-09-26 2009-03-26 Nikesh Bakshi Powered Tailgate Ramp
WO2009099972A2 (en) * 2008-01-31 2009-08-13 D-Wave Systems Inc. Magnetic vacuum systems and devices for use with superconducting-based computing systems
WO2016158421A1 (ja) 2015-04-03 2016-10-06 株式会社日立ハイテクノロジーズ 光量検出装置、それを用いた免疫分析装置および荷電粒子線装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6023068A (en) * 1991-05-30 2000-02-08 Canon Kabushiki Kaisha Semiconductor device manufacturing apparatus
US20070290703A1 (en) * 1998-08-27 2007-12-20 The Micromanipulator Company, Inc. High Resolution Analytical Probe Station
US20010039762A1 (en) * 2000-05-12 2001-11-15 Antonio Giovannetti Spring operated device for door movement, having an adjustable lever arm of the spring
US20030207475A1 (en) * 2000-11-02 2003-11-06 Ebara Corporation Electron beam apparatus and method of manufacturing semiconductor device using the apparatus
US20050162249A1 (en) * 2002-01-08 2005-07-28 Elekta Neuromag Oy Wall element for magnetically shielded room and magnetically shielded room
CN1795529A (zh) * 2003-05-28 2006-06-28 迈普尔平版印刷Ip有限公司 带电粒子小射束曝光系统
US20040263819A1 (en) * 2003-06-26 2004-12-30 Sumitomo Heavy Industries, Ltd. Airtight processing apparatus, airtight processing method, and electron beam processing apparatus
US20080230694A1 (en) * 2004-01-21 2008-09-25 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Beam Optical Component Having a Charged Particle Lens
US20060192143A1 (en) * 2005-01-24 2006-08-31 Shinsuke Nishhimura Charged particle beam lithography apparatus and method
US20060181689A1 (en) * 2005-02-14 2006-08-17 Nikon Corporation Lithographic-optical systems including isolatable vacuum chambers, and lithography apparatus comprising same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104428866A (zh) * 2012-05-14 2015-03-18 迈普尔平版印刷Ip有限公司 带电粒子光刻系统和射束产生器
CN110326176A (zh) * 2016-12-27 2019-10-11 Asml荷兰有限公司 馈通设备和信号导体路径装置
US10916362B2 (en) 2016-12-27 2021-02-09 Asml Netherlands B.V. Feedthrough device and signal conductor path arrangement
CN110326176B (zh) * 2016-12-27 2022-01-21 Asml荷兰有限公司 馈通设备和信号导体路径装置
CN114937585A (zh) * 2017-04-11 2022-08-23 Asml荷兰有限公司 带电粒子源模块
US12288663B2 (en) 2017-04-11 2025-04-29 Asml Netherlands B.V. Charged particle source module
CN114937585B (zh) * 2017-04-11 2025-05-06 Asml荷兰有限公司 带电粒子源模块
TWI692794B (zh) * 2017-04-19 2020-05-01 日商紐富來科技股份有限公司 多帶電粒子束描繪裝置及多帶電粒子束描繪方法

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Publication number Publication date
JP2012518897A (ja) 2012-08-16
KR20110131221A (ko) 2011-12-06
TW201044118A (en) 2010-12-16
WO2010094719A1 (en) 2010-08-26
EP2399270B1 (en) 2013-06-12
JP5680557B2 (ja) 2015-03-04
US20110042579A1 (en) 2011-02-24
TWI510863B (zh) 2015-12-01
KR101545193B1 (ko) 2015-08-18
EP2399270A1 (en) 2011-12-28

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Application publication date: 20120418