KR101545193B1 - 하전 입자 리소그래피 장치 및 진공 챔버 내에서 진공을 생성하는 방법 - Google Patents
하전 입자 리소그래피 장치 및 진공 챔버 내에서 진공을 생성하는 방법 Download PDFInfo
- Publication number
- KR101545193B1 KR101545193B1 KR1020117022182A KR20117022182A KR101545193B1 KR 101545193 B1 KR101545193 B1 KR 101545193B1 KR 1020117022182 A KR1020117022182 A KR 1020117022182A KR 20117022182 A KR20117022182 A KR 20117022182A KR 101545193 B1 KR101545193 B1 KR 101545193B1
- Authority
- KR
- South Korea
- Prior art keywords
- delete delete
- charged particle
- chamber
- vacuum chamber
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/22—Optical, image processing or photographic arrangements associated with the tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/16—Vessels; Containers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/86—Vessels; Containers; Vacuum locks
- H01J29/865—Vacuum locks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/16—Vessels; Containers
- H01J37/165—Means associated with the vessel for preventing the generation of or for shielding unwanted radiation, e.g. X-rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/16—Vessels
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15441509P | 2009-02-22 | 2009-02-22 | |
| US61/154,415 | 2009-02-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20110131221A KR20110131221A (ko) | 2011-12-06 |
| KR101545193B1 true KR101545193B1 (ko) | 2015-08-18 |
Family
ID=42025730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020117022182A Expired - Fee Related KR101545193B1 (ko) | 2009-02-22 | 2010-02-17 | 하전 입자 리소그래피 장치 및 진공 챔버 내에서 진공을 생성하는 방법 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20110042579A1 (https=) |
| EP (1) | EP2399270B1 (https=) |
| JP (1) | JP5680557B2 (https=) |
| KR (1) | KR101545193B1 (https=) |
| CN (1) | CN102422380A (https=) |
| TW (1) | TWI510863B (https=) |
| WO (1) | WO2010094719A1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200128362A (ko) * | 2019-05-03 | 2020-11-12 | 어포어 오와이 | 테스트 장치 |
Families Citing this family (28)
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| US8314483B2 (en) * | 2009-01-26 | 2012-11-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | On-chip heat spreader |
| US8586949B2 (en) | 2010-11-13 | 2013-11-19 | Mapper Lithography Ip B.V. | Charged particle lithography system with intermediate chamber |
| EP2676168B1 (en) | 2011-02-16 | 2018-09-12 | Mapper Lithography IP B.V. | System for magnetic shielding |
| NL2007604C2 (en) * | 2011-10-14 | 2013-05-01 | Mapper Lithography Ip Bv | Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams. |
| NL2007392C2 (en) * | 2011-09-12 | 2013-03-13 | Mapper Lithography Ip Bv | Assembly for providing an aligned stack of two or more modules and a lithography system or a microscopy system comprising such an assembly. |
| NL2006868C2 (en) | 2011-05-30 | 2012-12-03 | Mapper Lithography Ip Bv | Charged particle multi-beamlet apparatus. |
| JP2014530478A (ja) | 2011-09-09 | 2014-11-17 | マッパー・リソグラフィー・アイピー・ビー.ブイ. | 除振モジュール及び基板処理システム |
| CN103797420A (zh) * | 2011-09-12 | 2014-05-14 | 迈普尔平版印刷Ip有限公司 | 具有基底板的真空腔室 |
| CN106933063B (zh) * | 2012-03-20 | 2019-01-18 | 迈普尔平版印刷Ip有限公司 | 电子射束光刻系统 |
| US11348756B2 (en) | 2012-05-14 | 2022-05-31 | Asml Netherlands B.V. | Aberration correction in charged particle system |
| CN104428866A (zh) * | 2012-05-14 | 2015-03-18 | 迈普尔平版印刷Ip有限公司 | 带电粒子光刻系统和射束产生器 |
| JP2014082327A (ja) * | 2012-10-16 | 2014-05-08 | Canon Inc | 照射装置、描画装置及び物品の製造方法 |
| NL2010624C2 (en) | 2013-04-08 | 2014-10-09 | Mapper Lithography Ip Bv | Cabinet for electronic equipment. |
| CN108962708A (zh) * | 2013-11-14 | 2018-12-07 | 迈普尔平版印刷Ip有限公司 | 电极堆栈布置 |
| NL2014430A (en) * | 2014-03-13 | 2015-11-02 | Asml Netherlands Bv | Radiation Source. |
| JP6653125B2 (ja) * | 2014-05-23 | 2020-02-26 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置 |
| EP3155630A4 (en) | 2014-06-13 | 2018-01-24 | Intel Corporation | Ebeam staggered beam aperture array |
| US9897908B2 (en) | 2014-06-13 | 2018-02-20 | Intel Corporation | Ebeam three beam aperture array |
| EP3155647A4 (en) | 2014-06-13 | 2018-01-24 | Intel Corporation | Ebeam universal cutter |
| GB201414395D0 (en) | 2014-08-13 | 2014-09-24 | Nikon Metrology Nv | X-ray apparatus |
| US10096450B2 (en) | 2015-12-28 | 2018-10-09 | Mapper Lithography Ip B.V. | Control system and method for lithography apparatus |
| US10559408B2 (en) | 2016-12-27 | 2020-02-11 | Asml Netherlands B.V. | Feedthrough device and signal conductor path arrangement |
| US10008362B1 (en) | 2016-12-27 | 2018-06-26 | Mapper Lithography Ip B.V. | Optical fiber feedthrough device and fiber path arrangement |
| EP3610493A4 (en) * | 2017-04-11 | 2021-07-07 | ASML Netherlands B.V. | CHARGE PARTICLE SOURCE MODULE |
| JP6934742B2 (ja) * | 2017-04-19 | 2021-09-15 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法 |
| EP3734301A1 (en) * | 2019-05-03 | 2020-11-04 | Afore Oy | Cryogenic wafer prober with movable thermal radiation shield |
| JP7391735B2 (ja) * | 2019-09-25 | 2023-12-05 | 株式会社日立ハイテクサイエンス | 荷電粒子ビーム装置 |
| KR20230008209A (ko) | 2020-06-10 | 2023-01-13 | 에이에스엠엘 네델란즈 비.브이. | 하전 입자 장치용 교체 가능 모듈 |
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| US20020062166A1 (en) | 1995-07-19 | 2002-05-23 | Minoru Soraoka | Vacuum processing apparatus and semiconductor manufacturing line using the same |
| US20070144439A1 (en) | 2004-12-22 | 2007-06-28 | Applied Materials, Inc. | Cartesian cluster tool configuration for lithography type processes |
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| JPS60255291A (ja) * | 1984-05-31 | 1985-12-16 | Mitsubishi Electric Corp | 電子ビ−ム加工装置 |
| US4524308A (en) | 1984-06-01 | 1985-06-18 | Sony Corporation | Circuits for accomplishing electron beam convergence in color cathode ray tubes |
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-
2010
- 2010-02-17 CN CN2010800178733A patent/CN102422380A/zh active Pending
- 2010-02-17 WO PCT/EP2010/052004 patent/WO2010094719A1/en not_active Ceased
- 2010-02-17 KR KR1020117022182A patent/KR101545193B1/ko not_active Expired - Fee Related
- 2010-02-17 EP EP10704819.1A patent/EP2399270B1/en active Active
- 2010-02-17 JP JP2011550551A patent/JP5680557B2/ja not_active Expired - Fee Related
- 2010-02-19 US US12/708,544 patent/US20110042579A1/en not_active Abandoned
- 2010-02-22 TW TW099105114A patent/TWI510863B/zh not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020062166A1 (en) | 1995-07-19 | 2002-05-23 | Minoru Soraoka | Vacuum processing apparatus and semiconductor manufacturing line using the same |
| US20070144439A1 (en) | 2004-12-22 | 2007-06-28 | Applied Materials, Inc. | Cartesian cluster tool configuration for lithography type processes |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200128362A (ko) * | 2019-05-03 | 2020-11-12 | 어포어 오와이 | 테스트 장치 |
| KR102752735B1 (ko) | 2019-05-03 | 2025-01-08 | 어포어 오와이 | 테스트 장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012518897A (ja) | 2012-08-16 |
| KR20110131221A (ko) | 2011-12-06 |
| TW201044118A (en) | 2010-12-16 |
| WO2010094719A1 (en) | 2010-08-26 |
| EP2399270B1 (en) | 2013-06-12 |
| JP5680557B2 (ja) | 2015-03-04 |
| CN102422380A (zh) | 2012-04-18 |
| US20110042579A1 (en) | 2011-02-24 |
| TWI510863B (zh) | 2015-12-01 |
| EP2399270A1 (en) | 2011-12-28 |
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| PA0302 | Request for accelerated examination |
St.27 status event code: A-1-2-D10-D17-exm-PA0302 St.27 status event code: A-1-2-D10-D16-exm-PA0302 |
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