KR101545193B1 - 하전 입자 리소그래피 장치 및 진공 챔버 내에서 진공을 생성하는 방법 - Google Patents

하전 입자 리소그래피 장치 및 진공 챔버 내에서 진공을 생성하는 방법 Download PDF

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KR101545193B1
KR101545193B1 KR1020117022182A KR20117022182A KR101545193B1 KR 101545193 B1 KR101545193 B1 KR 101545193B1 KR 1020117022182 A KR1020117022182 A KR 1020117022182A KR 20117022182 A KR20117022182 A KR 20117022182A KR 101545193 B1 KR101545193 B1 KR 101545193B1
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South Korea
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charged particle
chamber
vacuum chamber
vacuum
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KR20110131221A (ko
Inventor
구이도 데 보에르
샌더 발투센
렘코 예거
제리 요하네스 마르티누스 페이지스터
티즈스 프란스 테펜
조리스 안네 헨리 반 노이브슈타트
빌렘 마우리트스 비다
알렉산더 헨드릭 빈센트 반 빈
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마퍼 리쏘그라피 아이피 비.브이.
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Assigned to 에이에스엠엘 네델란즈 비.브이. reassignment 에이에스엠엘 네델란즈 비.브이. 권리의 전부이전등록 Assignors: 마퍼 리쏘그라피 아이피 비.브이.
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/22Optical, image processing or photographic arrangements associated with the tube
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/16Vessels; Containers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/86Vessels; Containers; Vacuum locks
    • H01J29/865Vacuum locks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/16Vessels; Containers
    • H01J37/165Means associated with the vessel for preventing the generation of or for shielding unwanted radiation, e.g. X-rays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/18Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/20Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/16Vessels

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020117022182A 2009-02-22 2010-02-17 하전 입자 리소그래피 장치 및 진공 챔버 내에서 진공을 생성하는 방법 Expired - Fee Related KR101545193B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15441509P 2009-02-22 2009-02-22
US61/154,415 2009-02-22

Publications (2)

Publication Number Publication Date
KR20110131221A KR20110131221A (ko) 2011-12-06
KR101545193B1 true KR101545193B1 (ko) 2015-08-18

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KR1020117022182A Expired - Fee Related KR101545193B1 (ko) 2009-02-22 2010-02-17 하전 입자 리소그래피 장치 및 진공 챔버 내에서 진공을 생성하는 방법

Country Status (7)

Country Link
US (1) US20110042579A1 (https=)
EP (1) EP2399270B1 (https=)
JP (1) JP5680557B2 (https=)
KR (1) KR101545193B1 (https=)
CN (1) CN102422380A (https=)
TW (1) TWI510863B (https=)
WO (1) WO2010094719A1 (https=)

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KR20230008209A (ko) 2020-06-10 2023-01-13 에이에스엠엘 네델란즈 비.브이. 하전 입자 장치용 교체 가능 모듈

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
KR20200128362A (ko) * 2019-05-03 2020-11-12 어포어 오와이 테스트 장치
KR102752735B1 (ko) 2019-05-03 2025-01-08 어포어 오와이 테스트 장치

Also Published As

Publication number Publication date
JP2012518897A (ja) 2012-08-16
KR20110131221A (ko) 2011-12-06
TW201044118A (en) 2010-12-16
WO2010094719A1 (en) 2010-08-26
EP2399270B1 (en) 2013-06-12
JP5680557B2 (ja) 2015-03-04
CN102422380A (zh) 2012-04-18
US20110042579A1 (en) 2011-02-24
TWI510863B (zh) 2015-12-01
EP2399270A1 (en) 2011-12-28

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