TWI505041B - 照明光學系統，曝光設備，及裝置製造方法 - Google Patents

照明光學系統，曝光設備，及裝置製造方法 Download PDF

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Publication number
TWI505041B
TWI505041B TW102110042A TW102110042A TWI505041B TW I505041 B TWI505041 B TW I505041B TW 102110042 A TW102110042 A TW 102110042A TW 102110042 A TW102110042 A TW 102110042A TW I505041 B TWI505041 B TW I505041B
Authority
TW
Taiwan
Prior art keywords
offset
illuminated
aperture
illumination
optical system
Prior art date
Application number
TW102110042A
Other languages
English (en)
Chinese (zh)
Other versions
TW201341974A (zh
Inventor
斎藤順敬
Original Assignee
佳能股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 佳能股份有限公司 filed Critical 佳能股份有限公司
Publication of TW201341974A publication Critical patent/TW201341974A/zh
Application granted granted Critical
Publication of TWI505041B publication Critical patent/TWI505041B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70133—Measurement of illumination distribution, in pupil plane or field plane
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/40—Optical focusing aids
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Elements Other Than Lenses (AREA)
TW102110042A 2012-04-05 2013-03-21 照明光學系統，曝光設備，及裝置製造方法 TWI505041B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012086851A JP6023451B2 (ja) 2012-04-05 2012-04-05 照明光学系、露光装置及びデバイス製造方法

Publications (2)

Publication Number Publication Date
TW201341974A TW201341974A (zh) 2013-10-16
TWI505041B true TWI505041B (zh) 2015-10-21

Family

ID=49292054

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102110042A TWI505041B (zh) 2012-04-05 2013-03-21 照明光學系統，曝光設備，及裝置製造方法

Country Status (4)

Country Link
US (1) US9140991B2 (https=)
JP (1) JP6023451B2 (https=)
KR (1) KR101633317B1 (https=)
TW (1) TWI505041B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105632971B (zh) * 2014-11-26 2019-06-25 上海微电子装备（集团）股份有限公司 一种硅片处理装置及方法
TWI571710B (zh) * 2014-12-30 2017-02-21 力晶科技股份有限公司 曝光機台對準光源裝置內的模組作動監控方法及監控系統
JP6661270B2 (ja) * 2015-01-16 2020-03-11 キヤノン株式会社 露光装置、露光システム、および物品の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08241860A (ja) * 1996-02-13 1996-09-17 Nikon Corp フォトリソグラフィ装置及び露光方法
JP2000243681A (ja) * 1999-02-17 2000-09-08 Nikon Corp 投影露光装置及び該投影露光装置を用いた露光方法
JP2000252193A (ja) * 1999-03-01 2000-09-14 Canon Inc 露光装置、露光方法およびデバイス製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2503451B2 (ja) * 1985-12-26 1996-06-05 株式会社ニコン 投影露光方法及び装置
JPH0471217A (ja) * 1990-07-11 1992-03-05 Nec Yamagata Ltd 露光装置
JPH1126379A (ja) * 1997-05-09 1999-01-29 Canon Inc 露光装置およびデバイス製造方法
JPH11251219A (ja) * 1998-03-02 1999-09-17 Nikon Corp 露光装置、露光方法及びディスプレイ装置の製造方法
KR100574208B1 (ko) * 1998-06-02 2006-04-27 가부시키가이샤 니콘 주사형 노광장치 및 그의 제조방법, 및 디바이스 제조방법
WO2002054036A1 (en) * 2000-12-28 2002-07-11 Nikon Corporation Imaging characteristics measuring method, imaging characteriatics adjusting method, exposure method and system, program and recording medium, and device producing method
JP4497949B2 (ja) 2004-02-12 2010-07-07 キヤノン株式会社 露光装置
JP2008304834A (ja) * 2007-06-11 2008-12-18 Dainippon Screen Mfg Co Ltd パターン描画装置および歪み補正方法
JP2010186761A (ja) * 2009-02-10 2010-08-26 Canon Inc 露光装置、露光方法及びデバイス製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08241860A (ja) * 1996-02-13 1996-09-17 Nikon Corp フォトリソグラフィ装置及び露光方法
JP2000243681A (ja) * 1999-02-17 2000-09-08 Nikon Corp 投影露光装置及び該投影露光装置を用いた露光方法
JP2000252193A (ja) * 1999-03-01 2000-09-14 Canon Inc 露光装置、露光方法およびデバイス製造方法

Also Published As

Publication number Publication date
JP6023451B2 (ja) 2016-11-09
KR101633317B1 (ko) 2016-06-24
TW201341974A (zh) 2013-10-16
JP2013219117A (ja) 2013-10-24
US9140991B2 (en) 2015-09-22
US20130265559A1 (en) 2013-10-10
KR20130113378A (ko) 2013-10-15

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