KR101633317B1 - 조명 광학계, 노광 장치 및 디바이스 제조 방법 - Google Patents

조명 광학계, 노광 장치 및 디바이스 제조 방법 Download PDF

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KR101633317B1
KR101633317B1 KR1020130036122A KR20130036122A KR101633317B1 KR 101633317 B1 KR101633317 B1 KR 101633317B1 KR 1020130036122 A KR1020130036122 A KR 1020130036122A KR 20130036122 A KR20130036122 A KR 20130036122A KR 101633317 B1 KR101633317 B1 KR 101633317B1
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South Korea
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illumination range
illuminated
offset amount
blade
optical system
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English (en)
Korean (ko)
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KR20130113378A (ko
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노부유키 사이토
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캐논 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70133—Measurement of illumination distribution, in pupil plane or field plane
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/40—Optical focusing aids
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Elements Other Than Lenses (AREA)
KR1020130036122A 2012-04-05 2013-04-03 조명 광학계, 노광 장치 및 디바이스 제조 방법 Active KR101633317B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2012-086851 2012-04-05
JP2012086851A JP6023451B2 (ja) 2012-04-05 2012-04-05 照明光学系、露光装置及びデバイス製造方法

Publications (2)

Publication Number Publication Date
KR20130113378A KR20130113378A (ko) 2013-10-15
KR101633317B1 true KR101633317B1 (ko) 2016-06-24

Family

ID=49292054

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130036122A Active KR101633317B1 (ko) 2012-04-05 2013-04-03 조명 광학계, 노광 장치 및 디바이스 제조 방법

Country Status (4)

Country Link
US (1) US9140991B2 (https=)
JP (1) JP6023451B2 (https=)
KR (1) KR101633317B1 (https=)
TW (1) TWI505041B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105632971B (zh) * 2014-11-26 2019-06-25 上海微电子装备（集团）股份有限公司 一种硅片处理装置及方法
TWI571710B (zh) * 2014-12-30 2017-02-21 力晶科技股份有限公司 曝光機台對準光源裝置內的模組作動監控方法及監控系統
JP6661270B2 (ja) * 2015-01-16 2020-03-11 キヤノン株式会社 露光装置、露光システム、および物品の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2503451B2 (ja) * 1985-12-26 1996-06-05 株式会社ニコン 投影露光方法及び装置
JPH0471217A (ja) * 1990-07-11 1992-03-05 Nec Yamagata Ltd 露光装置
JP3068785B2 (ja) 1996-02-13 2000-07-24 株式会社ニコン 投影露光装置、または投影露光方法、及びその投影露光方法を用いたデバイス製造方法、及びそのデバイス製造方法により製造されたデバイス
JPH1126379A (ja) * 1997-05-09 1999-01-29 Canon Inc 露光装置およびデバイス製造方法
JPH11251219A (ja) * 1998-03-02 1999-09-17 Nikon Corp 露光装置、露光方法及びディスプレイ装置の製造方法
KR100574208B1 (ko) * 1998-06-02 2006-04-27 가부시키가이샤 니콘 주사형 노광장치 및 그의 제조방법, 및 디바이스 제조방법
JP2000243681A (ja) 1999-02-17 2000-09-08 Nikon Corp 投影露光装置及び該投影露光装置を用いた露光方法
JP2000252193A (ja) 1999-03-01 2000-09-14 Canon Inc 露光装置、露光方法およびデバイス製造方法
WO2002054036A1 (en) * 2000-12-28 2002-07-11 Nikon Corporation Imaging characteristics measuring method, imaging characteriatics adjusting method, exposure method and system, program and recording medium, and device producing method
JP4497949B2 (ja) 2004-02-12 2010-07-07 キヤノン株式会社 露光装置
JP2008304834A (ja) * 2007-06-11 2008-12-18 Dainippon Screen Mfg Co Ltd パターン描画装置および歪み補正方法
JP2010186761A (ja) * 2009-02-10 2010-08-26 Canon Inc 露光装置、露光方法及びデバイス製造方法

Also Published As

Publication number Publication date
JP6023451B2 (ja) 2016-11-09
TWI505041B (zh) 2015-10-21
TW201341974A (zh) 2013-10-16
JP2013219117A (ja) 2013-10-24
US9140991B2 (en) 2015-09-22
US20130265559A1 (en) 2013-10-10
KR20130113378A (ko) 2013-10-15

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