TWI502670B - 晶圓製程沉積屏蔽構件 - Google Patents
晶圓製程沉積屏蔽構件 Download PDFInfo
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- TWI502670B TWI502670B TW098112664A TW98112664A TWI502670B TW I502670 B TWI502670 B TW I502670B TW 098112664 A TW098112664 A TW 098112664A TW 98112664 A TW98112664 A TW 98112664A TW I502670 B TWI502670 B TW I502670B
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- Prior art keywords
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- cylindrical
- Prior art date
Links
- 230000008021 deposition Effects 0.000 title claims description 67
- 238000012545 processing Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims description 94
- 238000000034 method Methods 0.000 claims description 82
- 230000008569 process Effects 0.000 claims description 82
- 238000000151 deposition Methods 0.000 claims description 66
- 229910052782 aluminium Inorganic materials 0.000 claims description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 20
- 230000002093 peripheral effect Effects 0.000 claims description 20
- 238000004544 sputter deposition Methods 0.000 claims description 15
- 238000005507 spraying Methods 0.000 claims description 8
- 230000003746 surface roughness Effects 0.000 claims description 8
- 229910001220 stainless steel Inorganic materials 0.000 claims description 7
- 239000010935 stainless steel Substances 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 238000005477 sputtering target Methods 0.000 claims description 3
- 239000011324 bead Substances 0.000 claims 1
- 238000007373 indentation Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 36
- 239000000463 material Substances 0.000 description 18
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 12
- 238000005240 physical vapour deposition Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 238000005086 pumping Methods 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005422 blasting Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 208000000659 Autoimmune lymphoproliferative syndrome Diseases 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229940082150 encore Drugs 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000013529 heat transfer fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000000462 isostatic pressing Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3441—Dark space shields
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Optics & Photonics (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US4555608P | 2008-04-16 | 2008-04-16 | |
| US4933408P | 2008-04-30 | 2008-04-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201003819A TW201003819A (en) | 2010-01-16 |
| TWI502670B true TWI502670B (zh) | 2015-10-01 |
Family
ID=41200217
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098112664A TWI502670B (zh) | 2008-04-16 | 2009-04-16 | 晶圓製程沉積屏蔽構件 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US20090260982A1 (https=) |
| JP (1) | JP5916384B2 (https=) |
| KR (6) | KR101939640B1 (https=) |
| CN (1) | CN102007572B (https=) |
| TW (1) | TWI502670B (https=) |
| WO (1) | WO2009154853A2 (https=) |
Families Citing this family (110)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9062379B2 (en) * | 2008-04-16 | 2015-06-23 | Applied Materials, Inc. | Wafer processing deposition shielding components |
| CN102017077B (zh) * | 2008-05-02 | 2012-09-19 | 应用材料公司 | 用于射频物理气相沉积的处理套组 |
| US8900471B2 (en) | 2009-02-27 | 2014-12-02 | Applied Materials, Inc. | In situ plasma clean for removal of residue from pedestal surface without breaking vacuum |
| JP5611350B2 (ja) * | 2009-08-11 | 2014-10-22 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Ｒｆ物理気相堆積用のプロセスキット |
| KR200483057Y1 (ko) | 2010-01-29 | 2017-03-30 | 어플라이드 머티어리얼스, 인코포레이티드 | 물리 기상 증착 챔버를 위한 실드, 스퍼터링 타겟의 스퍼터링 표면을 에워싸기 위한 실드, 및 프로세스 키트 |
| US9834840B2 (en) * | 2010-05-14 | 2017-12-05 | Applied Materials, Inc. | Process kit shield for improved particle reduction |
| WO2012024061A2 (en) * | 2010-08-20 | 2012-02-23 | Applied Materials, Inc. | Extended life deposition ring |
| CN108359957A (zh) * | 2010-10-29 | 2018-08-03 | 应用材料公司 | 用于物理气相沉积腔室的沉积环及静电夹盘 |
| EP2487275B1 (en) * | 2011-02-11 | 2016-06-15 | SPTS Technologies Limited | Composite shielding |
| GB201102447D0 (en) * | 2011-02-11 | 2011-03-30 | Spp Process Technology Systems Uk Ltd | Composite shielding |
| US9905443B2 (en) * | 2011-03-11 | 2018-02-27 | Applied Materials, Inc. | Reflective deposition rings and substrate processing chambers incorporating same |
| JP5911958B2 (ja) * | 2011-08-25 | 2016-04-27 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 長方形基板に層を堆積させるためのマスク構造体、装置および方法 |
| JP5860063B2 (ja) * | 2011-12-22 | 2016-02-16 | キヤノンアネルバ株式会社 | 基板処理装置 |
| TWM431893U (en) * | 2012-02-10 | 2012-06-21 | Well Thin Technology Ltd | Deposition ring |
| US9376752B2 (en) * | 2012-04-06 | 2016-06-28 | Applied Materials, Inc. | Edge ring for a deposition chamber |
| US20130277203A1 (en) * | 2012-04-24 | 2013-10-24 | Applied Materials, Inc. | Process kit shield and physical vapor deposition chamber having same |
| WO2014035957A1 (en) * | 2012-08-30 | 2014-03-06 | Applied Materials, Inc. | Reflective deposition rings and substrate processing chambers incorporating same |
| CN103911585A (zh) * | 2013-01-08 | 2014-07-09 | 旭晖应用材料股份有限公司 | 遮罩 |
| KR102072044B1 (ko) * | 2013-09-26 | 2020-01-31 | 주성엔지니어링(주) | 기판 처리 장치 |
| WO2015138094A1 (en) * | 2014-03-12 | 2015-09-17 | Applied Materials, Inc. | Wafer rotation in a semiconductor chamber |
| US10053777B2 (en) * | 2014-03-19 | 2018-08-21 | Applied Materials, Inc. | Thermal processing chamber |
| US20150354054A1 (en) * | 2014-06-06 | 2015-12-10 | Applied Materials, Inc. | Cooled process tool adapter for use in substrate processing chambers |
| US10283334B2 (en) | 2014-08-22 | 2019-05-07 | Applied Materials, Inc. | Methods and apparatus for maintaining low non-uniformity over target life |
| CN105624634B (zh) * | 2014-11-04 | 2018-05-08 | 北京北方华创微电子装备有限公司 | 反应腔室及半导体加工设备 |
| CN105779932B (zh) * | 2014-12-26 | 2018-08-24 | 北京北方华创微电子装备有限公司 | 用于处理腔室的工艺内衬和物理气相沉积设备 |
| US10658222B2 (en) | 2015-01-16 | 2020-05-19 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
| WO2016116383A1 (de) * | 2015-01-19 | 2016-07-28 | Oerlikon Surface Solutions Ag, Pfäffikon | Beschichtungskammer zur durchführung eines vakuum gestützten beschichtungsverfahrens, wärmeschild, sowie beschichtungsverfahren |
| US10903055B2 (en) | 2015-04-17 | 2021-01-26 | Applied Materials, Inc. | Edge ring for bevel polymer reduction |
| WO2016191448A1 (en) * | 2015-05-27 | 2016-12-01 | Applied Materials, Inc. | Heat shield ring for high growth rate epi chamber |
| US10755902B2 (en) | 2015-05-27 | 2020-08-25 | Tokyo Electron Limited | Plasma processing apparatus and focus ring |
| JP6976925B2 (ja) * | 2015-07-03 | 2021-12-08 | アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated | 背高の堆積リングと堆積リングクランプとを有するプロセスキット |
| US10103012B2 (en) * | 2015-09-11 | 2018-10-16 | Applied Materials, Inc. | One-piece process kit shield for reducing the impact of an electric field near the substrate |
| US9953812B2 (en) | 2015-10-06 | 2018-04-24 | Applied Materials, Inc. | Integrated process kit for a substrate processing chamber |
| SG10202003396PA (en) * | 2015-10-27 | 2020-06-29 | Applied Materials Inc | Biasable flux optimizer/collimator for pvd sputter chamber |
| US10431440B2 (en) * | 2015-12-20 | 2019-10-01 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
| CN108369922B (zh) | 2016-01-26 | 2023-03-21 | 应用材料公司 | 晶片边缘环升降解决方案 |
| JP6888007B2 (ja) | 2016-01-26 | 2021-06-16 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | ウェハエッジリングの持ち上げに関する解決 |
| KR102161986B1 (ko) * | 2016-07-06 | 2020-10-06 | 가부시키가이샤 아루박 | 성막 장치, 플래턴 링 |
| US10446420B2 (en) | 2016-08-19 | 2019-10-15 | Applied Materials, Inc. | Upper cone for epitaxy chamber |
| USD836572S1 (en) | 2016-09-30 | 2018-12-25 | Applied Materials, Inc. | Target profile for a physical vapor deposition chamber target |
| JP7270540B2 (ja) * | 2016-10-14 | 2023-05-10 | エヴァテック・アーゲー | スパッタリングソース |
| US10923385B2 (en) * | 2016-11-03 | 2021-02-16 | Lam Research Corporation | Carrier plate for use in plasma processing systems |
| US10697057B2 (en) * | 2016-11-18 | 2020-06-30 | Applied Materials, Inc. | Collimator for use in a physical vapor deposition chamber |
| JP7117300B2 (ja) * | 2016-11-19 | 2022-08-12 | アプライド マテリアルズ インコーポレイテッド | 浮遊シャドウリングを有するプロセスキット |
| US10886113B2 (en) * | 2016-11-25 | 2021-01-05 | Applied Materials, Inc. | Process kit and method for processing a substrate |
| US9773665B1 (en) * | 2016-12-06 | 2017-09-26 | Applied Materials, Inc. | Particle reduction in a physical vapor deposition chamber |
| US9947517B1 (en) * | 2016-12-16 | 2018-04-17 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
| US10553404B2 (en) | 2017-02-01 | 2020-02-04 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
| CN108456860B (zh) * | 2017-02-22 | 2020-12-08 | 北京北方华创微电子装备有限公司 | 一种沉积腔室和膜层沉积装置 |
| US11043364B2 (en) * | 2017-06-05 | 2021-06-22 | Applied Materials, Inc. | Process kit for multi-cathode processing chamber |
| CN107227448B (zh) * | 2017-06-30 | 2023-10-13 | 北京北方华创微电子装备有限公司 | 基座以及物理气相沉积装置 |
| KR102258054B1 (ko) | 2017-07-24 | 2021-05-28 | 램 리써치 코포레이션 | 이동가능한 에지 링 설계들 |
| US11075105B2 (en) | 2017-09-21 | 2021-07-27 | Applied Materials, Inc. | In-situ apparatus for semiconductor process module |
| USD851613S1 (en) | 2017-10-05 | 2019-06-18 | Applied Materials, Inc. | Target profile for a physical vapor deposition chamber target |
| TWI760111B (zh) * | 2017-11-21 | 2022-04-01 | 美商蘭姆研究公司 | 底部和中間邊緣環 |
| TWI722257B (zh) * | 2017-11-21 | 2021-03-21 | 美商蘭姆研究公司 | 底部和中間邊緣環 |
| CN118380372A (zh) * | 2017-11-21 | 2024-07-23 | 朗姆研究公司 | 底部边缘环和中部边缘环 |
| USD868124S1 (en) * | 2017-12-11 | 2019-11-26 | Applied Materials, Inc. | Target profile for a physical vapor deposition chamber target |
| US11043400B2 (en) | 2017-12-21 | 2021-06-22 | Applied Materials, Inc. | Movable and removable process kit |
| CN111602235B (zh) * | 2018-01-29 | 2025-03-14 | 应用材料公司 | 用于在pvd处理中减少颗粒的处理配件几何形状 |
| USD877101S1 (en) | 2018-03-09 | 2020-03-03 | Applied Materials, Inc. | Target profile for a physical vapor deposition chamber target |
| WO2019204185A1 (en) * | 2018-04-18 | 2019-10-24 | Applied Materials, Inc. | Two piece shutter disk assembly with self-centering feature |
| US11201037B2 (en) | 2018-05-28 | 2021-12-14 | Applied Materials, Inc. | Process kit with adjustable tuning ring for edge uniformity control |
| US11935773B2 (en) | 2018-06-14 | 2024-03-19 | Applied Materials, Inc. | Calibration jig and calibration method |
| KR102067820B1 (ko) * | 2018-07-24 | 2020-01-17 | (주)선익시스템 | 가변형 아크억제수단이 마련된 증착장비 |
| CN118398464A (zh) | 2018-08-13 | 2024-07-26 | 朗姆研究公司 | 可更换和/或可折叠的用于等离子鞘调整的并入边缘环定位和定心功能的边缘环组件 |
| CN110838429B (zh) * | 2018-08-15 | 2022-07-22 | 北京北方华创微电子装备有限公司 | 腔体内衬、等离子体反应腔室和等离子体设备 |
| US11289310B2 (en) | 2018-11-21 | 2022-03-29 | Applied Materials, Inc. | Circuits for edge ring control in shaped DC pulsed plasma process device |
| US11551965B2 (en) | 2018-12-07 | 2023-01-10 | Applied Materials, Inc. | Apparatus to reduce polymers deposition |
| US11961723B2 (en) | 2018-12-17 | 2024-04-16 | Applied Materials, Inc. | Process kit having tall deposition ring for PVD chamber |
| KR102913646B1 (ko) * | 2018-12-19 | 2026-01-16 | 에바텍 아크티엔게젤샤프트 | 화합물 층을 증착하기 위한 진공 시스템 및 방법 |
| US11486038B2 (en) | 2019-01-30 | 2022-11-01 | Applied Materials, Inc. | Asymmetric injection for better wafer uniformity |
| JP7329940B2 (ja) * | 2019-03-22 | 2023-08-21 | 株式会社アルバック | 成膜装置及びその製造方法。 |
| WO2020214327A1 (en) | 2019-04-19 | 2020-10-22 | Applied Materials, Inc. | Ring removal from processing chamber |
| US12009236B2 (en) | 2019-04-22 | 2024-06-11 | Applied Materials, Inc. | Sensors and system for in-situ edge ring erosion monitor |
| CN110066981B (zh) * | 2019-06-17 | 2023-11-28 | 浙江晶驰光电科技有限公司 | 正装基片定位装置及基片装载方法 |
| CN110273134B (zh) * | 2019-07-25 | 2024-06-21 | 深圳清华大学研究院 | 全口径薄膜沉积夹具 |
| TWM602283U (zh) * | 2019-08-05 | 2020-10-01 | 美商蘭姆研究公司 | 基板處理系統用之具有升降銷溝槽的邊緣環 |
| USD908645S1 (en) | 2019-08-26 | 2021-01-26 | Applied Materials, Inc. | Sputtering target for a physical vapor deposition chamber |
| JP7376693B2 (ja) | 2019-09-09 | 2023-11-08 | アプライド マテリアルズ インコーポレイテッド | 処理システムおよび反応体ガスを供給する方法 |
| KR102776948B1 (ko) * | 2019-11-20 | 2025-03-05 | 캐논 톡키 가부시키가이샤 | 성막 장치, 이를 사용한 성막 방법 및 전자 디바이스 제조 방법 |
| CN111235535B (zh) | 2020-01-22 | 2021-11-16 | 北京北方华创微电子装备有限公司 | 一种溅射反应腔室的工艺组件及其溅射反应腔室 |
| US11339466B2 (en) * | 2020-03-20 | 2022-05-24 | Applied Materials, Inc. | Heated shield for physical vapor deposition chamber |
| USD937329S1 (en) | 2020-03-23 | 2021-11-30 | Applied Materials, Inc. | Sputter target for a physical vapor deposition chamber |
| KR102905595B1 (ko) | 2020-03-23 | 2025-12-29 | 램 리써치 코포레이션 | 기판 프로세싱 시스템들에서의 중간-링 부식 보상 |
| WO2021223953A1 (en) * | 2020-05-06 | 2021-11-11 | Asml Netherlands B.V. | Contamination shield for mechanically insulating device |
| US11581166B2 (en) * | 2020-07-31 | 2023-02-14 | Applied Materials, Inc. | Low profile deposition ring for enhanced life |
| WO2022076227A1 (en) | 2020-10-05 | 2022-04-14 | Lam Research Corporation | Moveable edge rings for plasma processing systems |
| US11670493B2 (en) * | 2020-11-13 | 2023-06-06 | Applied Materials, Inc. | Isolator ring clamp and physical vapor deposition chamber incorporating same |
| USD1038049S1 (en) | 2020-11-18 | 2024-08-06 | Applied Materials, Inc. | Cover ring for use in semiconductor processing chamber |
| US12100579B2 (en) * | 2020-11-18 | 2024-09-24 | Applied Materials, Inc. | Deposition ring for thin substrate handling via edge clamping |
| US11996315B2 (en) * | 2020-11-18 | 2024-05-28 | Applied Materials, Inc. | Thin substrate handling via edge clamping |
| USD940765S1 (en) | 2020-12-02 | 2022-01-11 | Applied Materials, Inc. | Target profile for a physical vapor deposition chamber target |
| CN114763602B (zh) * | 2021-01-13 | 2023-09-29 | 台湾积体电路制造股份有限公司 | 晶圆处理设备与制造半导体装置的方法 |
| USD1072774S1 (en) | 2021-02-06 | 2025-04-29 | Applied Materials, Inc. | Target profile for a physical vapor deposition chamber target |
| CN115110042B (zh) * | 2021-03-22 | 2024-03-01 | 台湾积体电路制造股份有限公司 | 物理气相沉积反应室及其使用方法 |
| USD1007449S1 (en) | 2021-05-07 | 2023-12-12 | Applied Materials, Inc. | Target profile for a physical vapor deposition chamber target |
| US11581167B2 (en) * | 2021-06-18 | 2023-02-14 | Applied Materials, Inc. | Process kit having tall deposition ring and smaller diameter electrostatic chuck (ESC) for PVD chamber |
| US11915918B2 (en) | 2021-06-29 | 2024-02-27 | Applied Materials, Inc. | Cleaning of sin with CCP plasma or RPS clean |
| USD1038901S1 (en) | 2022-01-12 | 2024-08-13 | Applied Materials, Inc. | Collimator for a physical vapor deposition chamber |
| CN114672780B (zh) * | 2022-03-22 | 2023-09-19 | 颀中科技（苏州）有限公司 | 晶圆托盘及晶圆片溅渡设备 |
| USD1053230S1 (en) | 2022-05-19 | 2024-12-03 | Applied Materials, Inc. | Sputter target for a physical vapor deposition chamber |
| US20250327170A1 (en) | 2022-07-08 | 2025-10-23 | Tosoh Smd, Inc. | Dynamic vacuum seal system for physical vapor deposition sputter applications |
| US20240021417A1 (en) * | 2022-07-15 | 2024-01-18 | Samsung Electronics Co., Ltd. | Focus ring, substrate processing apparatus including the same, and semiconductor fabrication method using the same |
| US12371790B2 (en) * | 2022-08-17 | 2025-07-29 | Sky Tech Inc. | Wafer carrier with adjustable alignment devices and deposition equipment using the same |
| CN116092910A (zh) * | 2022-12-01 | 2023-05-09 | 长鑫存储技术有限公司 | 一种聚焦环及晶边刻蚀装置 |
| KR102847491B1 (ko) * | 2023-02-06 | 2025-08-20 | 주식회사 트리버스시스템 | 전자 소멸 방지 쉴드를 구비한 반도체 프로세스 챔버 |
| USD1109856S1 (en) | 2023-07-07 | 2026-01-20 | Tosoh Smd, Inc. | Dynamic vacuum seal system isolation ring for physical vapor deposition sputter applications |
| KR102649810B1 (ko) * | 2023-08-30 | 2024-03-21 | 주식회사 코미코 | 증착 공정용 챔버의 코팅방법 |
| CN121065637B (zh) * | 2025-11-06 | 2026-02-27 | 陛通半导体设备(苏州)有限公司 | 沉积件及沉积设备 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001140054A (ja) * | 1999-11-15 | 2001-05-22 | Nec Kagoshima Ltd | 真空成膜装置のクリーニング方法及び真空成膜装置 |
| JP2007146290A (ja) * | 2005-10-31 | 2007-06-14 | Applied Materials Inc | 基板処理チャンバのためのプロセスキット及びターゲット |
| WO2007103902A2 (en) * | 2006-03-07 | 2007-09-13 | Applied Materials, Inc. | Notched deposition ring |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0784162B2 (ja) | 1988-07-25 | 1995-09-13 | 東海興業株式会社 | ウェザーストリップ、及びその成形方法 |
| US5803977A (en) * | 1992-09-30 | 1998-09-08 | Applied Materials, Inc. | Apparatus for full wafer deposition |
| JP3563095B2 (ja) * | 1993-10-28 | 2004-09-08 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
| US5632873A (en) * | 1995-05-22 | 1997-05-27 | Stevens; Joseph J. | Two piece anti-stick clamp ring |
| US5690795A (en) * | 1995-06-05 | 1997-11-25 | Applied Materials, Inc. | Screwless shield assembly for vacuum processing chambers |
| JP3545123B2 (ja) * | 1996-01-26 | 2004-07-21 | アプライド マテリアルズ インコーポレイテッド | ウエハ加熱器用成膜防護具 |
| US5914018A (en) * | 1996-08-23 | 1999-06-22 | Applied Materials, Inc. | Sputter target for eliminating redeposition on the target sidewall |
| US5942042A (en) * | 1997-05-23 | 1999-08-24 | Applied Materials, Inc. | Apparatus for improved power coupling through a workpiece in a semiconductor wafer processing system |
| US6051122A (en) * | 1997-08-21 | 2000-04-18 | Applied Materials, Inc. | Deposition shield assembly for a semiconductor wafer processing system |
| US6034863A (en) * | 1997-11-12 | 2000-03-07 | Applied Materials, Inc. | Apparatus for retaining a workpiece in a process chamber within a semiconductor wafer processing system |
| WO2000026939A1 (en) * | 1998-10-29 | 2000-05-11 | Applied Materials, Inc. | Apparatus for coupling power through a workpiece in a semiconductor wafer processing system |
| US6398929B1 (en) * | 1999-10-08 | 2002-06-04 | Applied Materials, Inc. | Plasma reactor and shields generating self-ionized plasma for sputtering |
| KR100342395B1 (ko) * | 2000-06-28 | 2002-07-02 | 황인길 | 반도체 소자 제조 장치 |
| US6699375B1 (en) * | 2000-06-29 | 2004-03-02 | Applied Materials, Inc. | Method of extending process kit consumable recycling life |
| US20020090464A1 (en) * | 2000-11-28 | 2002-07-11 | Mingwei Jiang | Sputter chamber shield |
| US7041201B2 (en) * | 2001-11-14 | 2006-05-09 | Applied Materials, Inc. | Sidewall magnet improving uniformity of inductively coupled plasma and shields used therewith |
| US6899798B2 (en) * | 2001-12-21 | 2005-05-31 | Applied Materials, Inc. | Reusable ceramic-comprising component which includes a scrificial surface layer |
| US6743340B2 (en) * | 2002-02-05 | 2004-06-01 | Applied Materials, Inc. | Sputtering of aligned magnetic materials and magnetic dipole ring used therefor |
| US6730174B2 (en) * | 2002-03-06 | 2004-05-04 | Applied Materials, Inc. | Unitary removable shield assembly |
| US7026009B2 (en) * | 2002-03-27 | 2006-04-11 | Applied Materials, Inc. | Evaluation of chamber components having textured coatings |
| US7041200B2 (en) * | 2002-04-19 | 2006-05-09 | Applied Materials, Inc. | Reducing particle generation during sputter deposition |
| US6797131B2 (en) * | 2002-11-12 | 2004-09-28 | Applied Materials, Inc. | Design of hardware features to facilitate arc-spray coating applications and functions |
| KR20050069452A (ko) * | 2003-12-31 | 2005-07-05 | 동부아남반도체 주식회사 | 스퍼터링 장치의 실드구조 |
| US20060054090A1 (en) | 2004-09-15 | 2006-03-16 | Applied Materials, Inc. | PECVD susceptor support construction |
| US7670436B2 (en) * | 2004-11-03 | 2010-03-02 | Applied Materials, Inc. | Support ring assembly |
| KR20070045060A (ko) * | 2005-10-26 | 2007-05-02 | 삼성전자주식회사 | 증착 링 및 이를 세정하는 방법 |
| JP4954542B2 (ja) * | 2005-12-09 | 2012-06-20 | 三菱マテリアル株式会社 | 掘削ロッド、掘削ビット及び掘削工具 |
| US7981262B2 (en) * | 2007-01-29 | 2011-07-19 | Applied Materials, Inc. | Process kit for substrate processing chamber |
-
2009
- 2009-04-14 CN CN2009801135361A patent/CN102007572B/zh active Active
- 2009-04-14 KR KR1020167023767A patent/KR101939640B1/ko active Active
- 2009-04-14 KR KR1020197022619A patent/KR102134276B1/ko active Active
- 2009-04-14 KR KR1020207016388A patent/KR20200067957A/ko not_active Withdrawn
- 2009-04-14 WO PCT/US2009/040487 patent/WO2009154853A2/en not_active Ceased
- 2009-04-14 JP JP2011505129A patent/JP5916384B2/ja active Active
- 2009-04-14 KR KR1020107025606A patent/KR101571558B1/ko active Active
- 2009-04-14 KR KR1020157032979A patent/KR20150136142A/ko not_active Ceased
- 2009-04-14 KR KR1020167005975A patent/KR102025330B1/ko active Active
- 2009-04-14 US US12/423,444 patent/US20090260982A1/en not_active Abandoned
- 2009-04-16 TW TW098112664A patent/TWI502670B/zh active
-
2012
- 2012-04-26 US US13/457,441 patent/US8696878B2/en active Active
-
2014
- 2014-03-11 US US14/204,873 patent/US9476122B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001140054A (ja) * | 1999-11-15 | 2001-05-22 | Nec Kagoshima Ltd | 真空成膜装置のクリーニング方法及び真空成膜装置 |
| JP2007146290A (ja) * | 2005-10-31 | 2007-06-14 | Applied Materials Inc | 基板処理チャンバのためのプロセスキット及びターゲット |
| WO2007103902A2 (en) * | 2006-03-07 | 2007-09-13 | Applied Materials, Inc. | Notched deposition ring |
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| KR20160030343A (ko) | 2016-03-16 |
| WO2009154853A3 (en) | 2010-02-25 |
| TW201003819A (en) | 2010-01-16 |
| JP2011518255A (ja) | 2011-06-23 |
| KR20200067957A (ko) | 2020-06-12 |
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| US20120211359A1 (en) | 2012-08-23 |
| US20140190822A1 (en) | 2014-07-10 |
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| JP5916384B2 (ja) | 2016-05-11 |
| US20090260982A1 (en) | 2009-10-22 |
| KR101939640B1 (ko) | 2019-01-17 |
| KR20190092628A (ko) | 2019-08-07 |
| CN102007572A (zh) | 2011-04-06 |
| US9476122B2 (en) | 2016-10-25 |
| KR20110007195A (ko) | 2011-01-21 |
| KR101571558B1 (ko) | 2015-11-24 |
| WO2009154853A2 (en) | 2009-12-23 |
| US8696878B2 (en) | 2014-04-15 |
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