TWI499860B - 光罩之製造方法、光罩、圖案轉印方法及平面顯示器之製造方法 - Google Patents

光罩之製造方法、光罩、圖案轉印方法及平面顯示器之製造方法 Download PDF

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Publication number
TWI499860B
TWI499860B TW102117253A TW102117253A TWI499860B TW I499860 B TWI499860 B TW I499860B TW 102117253 A TW102117253 A TW 102117253A TW 102117253 A TW102117253 A TW 102117253A TW I499860 B TWI499860 B TW I499860B
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TW
Taiwan
Prior art keywords
pattern
light
film
semi
manufacturing
Prior art date
Application number
TW102117253A
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English (en)
Chinese (zh)
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TW201400976A (zh
Inventor
Noboru Yamaguchi
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW201400976A publication Critical patent/TW201400976A/zh
Application granted granted Critical
Publication of TWI499860B publication Critical patent/TWI499860B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW102117253A 2012-06-18 2013-05-15 光罩之製造方法、光罩、圖案轉印方法及平面顯示器之製造方法 TWI499860B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012137171A JP6063650B2 (ja) 2012-06-18 2012-06-18 フォトマスクの製造方法

Publications (2)

Publication Number Publication Date
TW201400976A TW201400976A (zh) 2014-01-01
TWI499860B true TWI499860B (zh) 2015-09-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW102117253A TWI499860B (zh) 2012-06-18 2013-05-15 光罩之製造方法、光罩、圖案轉印方法及平面顯示器之製造方法

Country Status (4)

Country Link
JP (1) JP6063650B2 (enrdf_load_stackoverflow)
KR (1) KR101443531B1 (enrdf_load_stackoverflow)
CN (1) CN103513505B (enrdf_load_stackoverflow)
TW (1) TWI499860B (enrdf_load_stackoverflow)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104460250B (zh) * 2014-04-22 2017-01-04 上海华力微电子有限公司 一种提高光刻工艺窗口的版图处理方法
KR102157644B1 (ko) * 2014-08-13 2020-09-21 (주)에스앤에스텍 다계조 포토 마스크 및 그의 제조 방법
TWI604267B (zh) * 2014-12-17 2017-11-01 Ｈｏｙａ股份有限公司 光罩之製造方法及顯示裝置之製造方法
JP6456748B2 (ja) * 2015-03-28 2019-01-23 Hoya株式会社 フォトマスクの製造方法、フォトマスク及びフラットパネルディスプレイの製造方法
JP2016224289A (ja) * 2015-06-01 2016-12-28 Hoya株式会社 フォトマスクの製造方法、フォトマスク及び表示装置の製造方法
JP6767735B2 (ja) * 2015-06-30 2020-10-14 Hoya株式会社 フォトマスク、フォトマスクの設計方法、フォトマスクブランク、および表示装置の製造方法
CN105093760A (zh) * 2015-09-18 2015-11-25 京东方科技集团股份有限公司 Coa基板及其制备方法、显示装置
JP6586344B2 (ja) * 2015-10-20 2019-10-02 Hoya株式会社 フォトマスクの製造方法、フォトマスク、および、表示装置の製造方法
JP6761255B2 (ja) * 2016-02-15 2020-09-23 関東化学株式会社 エッチング液およびエッチング液により加工されたフォトマスク
JP6514143B2 (ja) * 2016-05-18 2019-05-15 Hoya株式会社 フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法
JP6755733B2 (ja) * 2016-07-14 2020-09-16 キヤノン株式会社 マスク、計測方法、露光方法、及び、物品製造方法
JP7080070B2 (ja) * 2017-03-24 2022-06-03 Hoya株式会社 フォトマスク、及び表示装置の製造方法
KR102227885B1 (ko) * 2020-06-02 2021-03-15 주식회사 기가레인 패턴 정렬 가능한 전사 장치
TW202434990A (zh) 2023-02-27 2024-09-01 日商Ｓｋ電子股份有限公司 光罩的製造方法及光罩
WO2025009061A1 (ja) * 2023-07-04 2025-01-09 株式会社ニコン マスクおよび露光方法

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US20080153011A1 (en) * 2005-09-06 2008-06-26 Fujitsu Limited Pattern transfer mask, focus variation measuring method and apparatus, and semiconductor device manufacturing method
TW201033729A (en) * 2003-10-24 2010-09-16 Shinetsu Chemical Co Phase shift mask blank, phase shift mask, and pattern transfer method
JP2011013283A (ja) * 2009-06-30 2011-01-20 Ulvac Seimaku Kk 位相シフトマスクの製造方法、フラットパネルディスプレイの製造方法及び位相シフトマスク
TW201215998A (en) * 2010-05-24 2012-04-16 Hoya Corp Method of manufacturing a multi-tone photomask and pattern transfer method
US20120097056A1 (en) * 2010-04-21 2012-04-26 Beijing Boe Optoelectronics Technology Co., Ltd. Transfer printing apparatus for mask pattern and mask pattern preparation method

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JPH1124231A (ja) * 1997-07-01 1999-01-29 Sony Corp ハーフトーン位相シフトマスク、及びその製造方法
TWI286663B (en) * 2003-06-30 2007-09-11 Hoya Corp Method for manufacturing gray tone mask, and gray tone mask
JP2006017798A (ja) * 2004-06-30 2006-01-19 Toppan Printing Co Ltd ハーフトーン型位相シフトマスク及びその検査方法
TW200913013A (en) * 2007-07-30 2009-03-16 Hoya Corp Method of manufacturing a gray tone mask, gray tone mask, method of inspecting a gray tone mask, and method of transferring a pattern
KR101396078B1 (ko) * 2009-02-16 2014-05-15 다이니폰 인사츠 가부시키가이샤 포토마스크, 포토마스크의 제조 방법 및 수정 방법
JP5479074B2 (ja) * 2009-12-21 2014-04-23 Ｈｏｙａ株式会社 光学素子の製造方法、光学素子
JP2012008546A (ja) * 2010-05-24 2012-01-12 Hoya Corp 多階調フォトマスクの製造方法、及びパターン転写方法
JP6081716B2 (ja) * 2012-05-02 2017-02-15 Hoya株式会社 フォトマスク、パターン転写方法及びフラットパネルディスプレイの製造方法

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TW201033729A (en) * 2003-10-24 2010-09-16 Shinetsu Chemical Co Phase shift mask blank, phase shift mask, and pattern transfer method
US20080153011A1 (en) * 2005-09-06 2008-06-26 Fujitsu Limited Pattern transfer mask, focus variation measuring method and apparatus, and semiconductor device manufacturing method
JP2011013283A (ja) * 2009-06-30 2011-01-20 Ulvac Seimaku Kk 位相シフトマスクの製造方法、フラットパネルディスプレイの製造方法及び位相シフトマスク
US20120097056A1 (en) * 2010-04-21 2012-04-26 Beijing Boe Optoelectronics Technology Co., Ltd. Transfer printing apparatus for mask pattern and mask pattern preparation method
TW201215998A (en) * 2010-05-24 2012-04-16 Hoya Corp Method of manufacturing a multi-tone photomask and pattern transfer method

Also Published As

Publication number Publication date
CN103513505A (zh) 2014-01-15
CN103513505B (zh) 2017-05-17
KR101443531B1 (ko) 2014-09-23
CN105223769A (zh) 2016-01-06
JP6063650B2 (ja) 2017-01-18
KR20130142072A (ko) 2013-12-27
TW201400976A (zh) 2014-01-01
JP2014002255A (ja) 2014-01-09

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