TWI496758B - In-Ga-O-based oxide sintered body, target material, oxide semiconductor thin film, and the like - Google Patents

In-Ga-O-based oxide sintered body, target material, oxide semiconductor thin film, and the like Download PDF

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Publication number
TWI496758B
TWI496758B TW100101510A TW100101510A TWI496758B TW I496758 B TWI496758 B TW I496758B TW 100101510 A TW100101510 A TW 100101510A TW 100101510 A TW100101510 A TW 100101510A TW I496758 B TWI496758 B TW I496758B
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Taiwan
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sintered body
oxide
thin film
oxide sintered
sputtering
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TW100101510A
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English (en)
Chinese (zh)
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TW201134781A (en
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江端一晃
笘井重和
矢野公規
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出光興產股份有限公司
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
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    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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TW100101510A 2010-01-15 2011-01-14 In-Ga-O-based oxide sintered body, target material, oxide semiconductor thin film, and the like TWI496758B (zh)

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Application Number Priority Date Filing Date Title
JP2010006831A JP5437825B2 (ja) 2010-01-15 2010-01-15 Ｉｎ−Ｇａ−Ｏ系酸化物焼結体、ターゲット、酸化物半導体薄膜及びこれらの製造方法

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TW201134781A TW201134781A (en) 2011-10-16
TWI496758B true TWI496758B (zh) 2015-08-21

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