KR102001747B1 - In-Ga-O계 산화물 소결체, 타겟, 산화물 반도체 박막 및 이들의 제조방법 - Google Patents

In-Ga-O계 산화물 소결체, 타겟, 산화물 반도체 박막 및 이들의 제조방법 Download PDF

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KR102001747B1
KR102001747B1 KR1020177020621A KR20177020621A KR102001747B1 KR 102001747 B1 KR102001747 B1 KR 102001747B1 KR 1020177020621 A KR1020177020621 A KR 1020177020621A KR 20177020621 A KR20177020621 A KR 20177020621A KR 102001747 B1 KR102001747 B1 KR 102001747B1
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oxide
thin film
sintered body
indium oxide
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KR20170087977A (ko
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가즈아키 에바타
시게카즈 도마이
고키 야노
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이데미쓰 고산 가부시키가이샤
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KR1020177020621A 2010-01-15 2011-01-14 In-Ga-O계 산화물 소결체, 타겟, 산화물 반도체 박막 및 이들의 제조방법 Active KR102001747B1 (ko)

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Application Number Priority Date Filing Date Title
JPJP-P-2010-006831 2010-01-15
JP2010006831A JP5437825B2 (ja) 2010-01-15 2010-01-15 In−Ga−O系酸化物焼結体、ターゲット、酸化物半導体薄膜及びこれらの製造方法
PCT/JP2011/000169 WO2011086940A1 (ja) 2010-01-15 2011-01-14 In-Ga-O系酸化物焼結体、ターゲット、酸化物半導体薄膜及びこれらの製造方法

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