JP5437825B2 - Ｉｎ−Ｇａ−Ｏ系酸化物焼結体、ターゲット、酸化物半導体薄膜及びこれらの製造方法 - Google Patents

Ｉｎ−Ｇａ−Ｏ系酸化物焼結体、ターゲット、酸化物半導体薄膜及びこれらの製造方法 Download PDF

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Publication number
JP5437825B2
JP5437825B2 JP2010006831A JP2010006831A JP5437825B2 JP 5437825 B2 JP5437825 B2 JP 5437825B2 JP 2010006831 A JP2010006831 A JP 2010006831A JP 2010006831 A JP2010006831 A JP 2010006831A JP 5437825 B2 JP5437825 B2 JP 5437825B2
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Prior art keywords
thin film
sintered body
oxide
target
sputtering
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Japanese (ja)
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JP2011146571A5 (enExample
JP2011146571A (ja
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一晃 江端
重和 笘井
公規 矢野
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Idemitsu Kosan Co Ltd
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Idemitsu Kosan Co Ltd
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Priority to JP2010006831A priority Critical patent/JP5437825B2/ja
Application filed by Idemitsu Kosan Co Ltd filed Critical Idemitsu Kosan Co Ltd
Priority to KR1020177020621A priority patent/KR102001747B1/ko
Priority to TW100101510A priority patent/TWI496758B/zh
Priority to EP11732812.0A priority patent/EP2524905A4/en
Priority to CN201180004849.0A priority patent/CN102652119B/zh
Priority to PCT/JP2011/000169 priority patent/WO2011086940A1/ja
Priority to KR1020127018153A priority patent/KR20120123322A/ko
Priority to US13/522,198 priority patent/US20120292617A1/en
Publication of JP2011146571A publication Critical patent/JP2011146571A/ja
Publication of JP2011146571A5 publication Critical patent/JP2011146571A5/ja
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