TWI494451B - 形成高強度光記錄媒體保護膜用濺鍍靶 - Google Patents

形成高強度光記錄媒體保護膜用濺鍍靶 Download PDF

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TWI494451B
TWI494451B TW102120342A TW102120342A TWI494451B TW I494451 B TWI494451 B TW I494451B TW 102120342 A TW102120342 A TW 102120342A TW 102120342 A TW102120342 A TW 102120342A TW I494451 B TWI494451 B TW I494451B
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Taiwan
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target
recording medium
powder
optical recording
sputtering
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TW102120342A
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English (en)
Chinese (zh)
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TW201346047A (zh
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Shoubin Zhang
Hayato Sasaki
Syozou Komiyama
Akifumi Mishima
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Mitsubishi Materials Corp
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  • Compositions Of Oxide Ceramics (AREA)
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WO2010004862A1 (ja) * 2008-07-07 2010-01-14 日鉱金属株式会社 酸化物焼結体、同焼結体からなるスパッタリングターゲット、同焼結体の製造方法及び同焼結体スパッタリングターゲットゲートの製造方法
CN101580927B (zh) * 2009-06-26 2012-07-04 西北有色金属研究院 一种锰稳定氧化铪薄膜的制备方法
JP4831258B2 (ja) * 2010-03-18 2011-12-07 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
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JP6149804B2 (ja) * 2014-05-30 2017-06-21 住友金属鉱山株式会社 酸化物焼結体及びその製造方法
WO2019155577A1 (ja) * 2018-02-08 2019-08-15 三菱マテリアル株式会社 酸化物スパッタリングターゲット、及び酸化物スパッタリングターゲットの製造方法
WO2020044798A1 (ja) * 2018-08-27 2020-03-05 三菱マテリアル株式会社 酸化物スパッタリングターゲット、及び、酸化物スパッタリングターゲットの製造方法
JP2020033639A (ja) * 2018-08-27 2020-03-05 三菱マテリアル株式会社 酸化物スパッタリングターゲット、及び、酸化物スパッタリングターゲットの製造方法
JP7227473B2 (ja) * 2018-09-25 2023-02-22 日亜化学工業株式会社 光学薄膜の製造方法、薄膜形成材料、光学薄膜、及び光学部材
JP2021088730A (ja) 2019-12-02 2021-06-10 三菱マテリアル株式会社 酸化物スパッタリングターゲット、及び、酸化物スパッタリングターゲットの製造方法
CN114853447B (zh) * 2021-02-04 2023-09-26 光洋应用材料科技股份有限公司 铟锆硅氧化物靶材及其制法及铟锆硅氧化物薄膜
CN114133226B (zh) * 2021-12-30 2022-11-08 苏州晶生新材料有限公司 一种光学镀层基材及使用方法

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TWI454586B (zh) 2014-10-01
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TW201346047A (zh) 2013-11-16
TWI406961B (zh) 2013-09-01
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JP5088464B2 (ja) 2012-12-05
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